200mm 8inch GaN ku-sapphire Epi-layer wafer substrate
Isingeniso somkhiqizo
I-GaN-on-Sapphire substrate engama-intshi angu-8 iyisisetshenziswa sezinga eliphezulu se-semiconductor esakhiwe ungqimba lwe-Gallium Nitride (GaN) olukhule ku-Sapphire substrate.Le nto inikezela ngezinto ezinhle kakhulu zokuhamba nge-elekthronikhi futhi ilungele ukwenziwa kwamadivayisi anamandla amakhulu kanye nama-high-frequency semiconductor.
Indlela Yokukhiqiza
Inqubo yokukhiqiza ibandakanya ukukhula kwe-epitaxial kongqimba lwe-GaN ku-Sapphire substrate kusetshenziswa amasu athuthukile njenge-metal-organic chemical vapor deposition (MOCVD) noma i-molecular beam epitaxy (MBE).Ukufakwa kwenziwa ngaphansi kwezimo ezilawulwayo ukuze kuqinisekiswe ikhwalithi ephezulu yekristalu nokufana kwefilimu.
Izinhlelo zokusebenza
I-substrate ye-GaN-on-Sapphire engu-8 intshi ithola izinhlelo zokusebenza ezibanzi emikhakheni eyahlukene ehlanganisa ukuxhumana kwe-microwave, amasistimu e-radar, ubuchwepheshe obungenawaya, kanye ne-optoelectronics.Ezinye zezinhlelo zokusebenza ezijwayelekile zifaka:
1. Izikhulisamandla ze-RF
2. Imboni yezibani ze-LED
3. Imishini yokuxhumana yenethiwekhi engenantambo
4. Imishini kagesi yendawo enezinga eliphezulu lokushisa
5. Oamadivaysi e-ptoelectronic
Imininingwane Yomkhiqizo
-Ubukhulu: Usayizi we-substrate ungama-intshi angu-8 (200 mm) ububanzi.
- Ikhwalithi Yobuso: Ingaphezulu lipholishelwe izinga eliphezulu lokushelela futhi libonisa ikhwalithi enhle kakhulu efana nesibuko.
- Ubukhulu: Ugqinsi lwesendlalelo se-GaN lungenziwa ngendlela oyifisayo ngokusekelwe ezidingweni ezithile.
- Ukupakishwa: I-substrate ihlanganiswe ngokucophelela ezintweni ezilwa ne-static ukuvimbela ukulimala ngesikhathi sokuthutha.
- I-Orientation Flat: I-substrate ineflethi yokuma ethile ukuze isize ekuqondaniseni kwe-wafer nokubamba ngesikhathi sezinqubo zokwenziwa kwedivayisi.
- Eminye imingcele: Ukucaciswa kokuqina, ukumelana, kanye nokugxila kwe-dopant kungalungiswa ngokwezidingo zekhasimende ngalinye.
Ngezakhiwo zayo zezinto ezibonakalayo eziphakeme kanye nezinhlelo zokusebenza eziguquguqukayo, i-substrate ye-GaN-on-Sapphire engu-8-intshi iyisinqumo esithembekile sokuthuthukiswa kwamadivayisi asebenza kahle e-semiconductor ezimbonini ezihlukahlukene.
Ngaphandle kwe-GaN-On-Sapphire, singanikeza futhi emkhakheni wezinhlelo zokusebenza zedivayisi yamandla, umndeni womkhiqizo uhlanganisa ama-wafers epitaxial angu-8-inch AlGaN/GaN-on-Si kanye ne-8-inch P-cap AlGaN/GaN-on-Si epitaxial izinkwa eziwucwecwe.Ngesikhathi esifanayo, sisungule ukusetshenziswa kobuchwepheshe bayo obuthuthukisiwe be-GaN epitaxy obungu-8-intshi endaweni ye-microwave, futhi sathuthukisa i-wafer ye-AlGaN/GAN-on-HR Si epitaxy engu-8-intshi ehlanganisa ukusebenza okuphezulu nosayizi omkhulu, izindleko eziphansi. futhi ihambisana nokucutshungulwa kwedivayisi okujwayelekile kwamayintshi angu-8.Ngokungeziwe ku-silicon-based gallium nitride, siphinde sibe nomugqa womkhiqizo we-AlGaN/GaN-on-SiC epitaxial wafers ukuhlangabezana nezidingo zamakhasimende zezinto zokwakha ze-silicon-based gallium nitride epitaxial.
Umdwebo onemininingwane
