50.8mm 2inch GaN ku-sapphire Epi-layer wafer

Incazelo emfushane:

Njengengxenye yesithathu yesizukulwane se-semiconductor, i-gallium nitride inezinzuzo zokumelana nokushisa okuphezulu, ukuhambisana okuphezulu, ukuguquguquka okuphezulu kwe-thermal kanye negebe elibanzi lebhendi.Ngokwezinto ezihlukene ze-substrate, amashidi e-gallium nitride epitaxial angahlukaniswa abe izigaba ezine: i-gallium nitride esekelwe ku-gallium nitride, i-silicon carbide esekelwe ku-gallium nitride, i-sapphire based gallium nitride kanye ne-silicon based gallium nitride.I-silicon-based gallium nitride epitaxial sheet iwumkhiqizo osetshenziswa kakhulu onezindleko eziphansi zokukhiqiza kanye nobuchwepheshe bokukhiqiza obuvuthiwe.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ukusetshenziswa kweshidi le-gallium nitride GaN epitaxial

Ngokusekelwe ekusebenzeni kwe-gallium nitride, ama-chips e-gallium nitride epitaxial afaneleka kakhulu amandla aphezulu, imvamisa ephezulu, kanye nezicelo ze-voltage ephansi.

Kubonakala ku:

I-1) I-bandgap ephezulu: I-bandgap ephezulu ithuthukisa izinga le-voltage yamadivayisi we-gallium nitride futhi ingakhipha amandla aphezulu kunamadivayisi e-gallium arsenide, afaneleka ngokukhethekile iziteshi eziyisisekelo zokuxhumana ze-5G, i-radar yezempi nezinye izinkambu;

I-2) Ukusebenza kahle kokuguqulwa okuphezulu: ukumelana nokumelana kwe-gallium nitride switching power electronics ama-oda angu-3 obukhulu obuphansi kunalawo we-silicon, okunganciphisa kakhulu ukulahlekelwa ekushintsheni;

I-3) I-conductivity ephezulu yokushisa: ukushisa okuphezulu kwe-gallium nitride kwenza kube nokusebenza okuhle kakhulu kokukhipha ukushisa, okulungele ukukhiqizwa kwamandla aphezulu, izinga lokushisa eliphezulu kanye nezinye izinkambu zamadivayisi;

I-4) Amandla ensimu kagesi yokuwohloka: Nakuba amandla ensimu kagesi ewohlokayo ye-gallium nitride eseduze naleyo ye-silicon nitride, ngenxa yenqubo ye-semiconductor, ukungafani kwe-lattice yezinto ezibonakalayo nezinye izici, ukubekezelelwa kwamandla kagesi kumadivayisi we-gallium nitride kuvame ukuba ngu-1000V, kanti I-voltage yokusebenzisa ephephile ngokuvamile ingaphansi kuka-650V.

Into	I-GaN-TCU-C50	I-GaN-TCN-C50	I-GaN-TCP-C50
Ubukhulu	e 50.8mm ± 0.1mm
Ubukhulu	4.5±0.5 um		4.5±0.5um
Ukuqondisa	Indiza ye-C(0001) ±0.5°
Uhlobo Lokuqhuba	N-uhlobo (Akususiwe)	N-uhlobo (Si-doped)	Uhlobo lwe-P (Mg-doped)
Ukumelana(3O0K)	<0.5 Q・cm	<0.05 Q・cm	~ 10 Q・cm
I-Carrier Concentration	<5x10¹⁷cm^-3	> 1x10¹⁸cm^-3	> 6x1016 cm^-3
Ukuhamba	~ 300 cm²/Vs	~ 200 cm²/Vs	~ 10cm²/Vs
Ukuminyana Kokususwa	Ngaphansi kuka-5x10⁸cm^-2(kubalwe ama-FWHM e-XRD)
Isakhiwo se-substrate	I-GaN kuSapphire(Okujwayelekile: Inketho ye-SSP: DSP)
Indawo Esetshenziswayo Yobuso	> 90%
Iphakheji	Ipakishwe endaweni yegumbi elihlanzekile lekilasi elingu-100, kumakhasethi angama-25pcs noma ezitsheni eziyisinkwa esiyisinkwa esisodwa, ngaphansi kwesimo se-nitrogen.