Ibanga le-8Inch 200mm 4H-N SiC Wafer Conductive dummy research grade

8Inch 200mm 4H-N SiC Wafer Conductive dummy ibanga locwaningo Isithombe Esifakiwe

Incazelo emfushane:

Njengoba ezokuthutha, izimakethe zamandla nezimboni zishintsha, isidingo sezinto zikagesi ezithembekile, ezisebenza kahle ziyaqhubeka nokukhula.Ukuze kuhlangatshezwane nezidingo zokusebenza okuthuthukisiwe kwe-semiconductor, abakhiqizi bedivayisi babheke ezintweni ezisetshenziswayo ze-semiconductor ebanzi, njengephothifoliyo yethu ye-4H SiC Prime Grade yama-wafers we-4H n -type silicon carbide (SiC).

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ngenxa yezakhiwo zayo ezihlukile zomzimba neze-elekthronikhi, impahla ye-wafer semiconductor engu-200mm SiC isetshenziselwa ukwakha izinto zikagesi ezisebenza kahle, ezishisa kakhulu, ezingazweli emisebeni, kanye nezisetshenziswa zikagesi ezisebenza kakhulu.Intengo ye-substrate engu-8inch SiC iyancipha kancane kancane njengoba ubuchwepheshe buthuthuka kakhulu futhi nesidingo sikhula.Intuthuko yakamuva yobuchwepheshe iholela ekukhiqizeni isikali sokukhiqiza amawafa angama-200mm SiC.Izinzuzo eziyinhloko zezinto ezisetshenziswayo ze-SiC wafer semiconductor uma kuqhathaniswa namawafa e-Si kanye nama-GaAs: Amandla enkambu kagesi engu-4H-SiC ngesikhathi sokuwohloka kwe-avalanche angaphezulu kwe-oda lobukhulu obuphezulu kunamanani ahambisanayo we-Si kanye nama-GaAs.Lokhu kuholela ekwehleni okukhulu kwe-on-state resistivity Ron.I-Low on-state resistivity, ehlangene ne-high density yamanje kanye ne-thermal conductivity, ivumela ukusetshenziswa kokufa okuncane kakhulu kumadivayisi wamandla.Ukushisa okuphezulu kwe-SiC kunciphisa ukumelana nokushisa kwe-chip.Izakhiwo ze-elekthronikhi zamadivayisi asekelwe kuma-wafers e-SiC azinzile kakhulu ngokuhamba kwesikhathi nasezingeni lokushisa elizinzile, okuqinisekisa ukuthembeka okuphezulu kwemikhiqizo.I-silicon carbide imelana ngokwedlulele emisebeni eqinile, engonakalisi izakhiwo ze-elekthronikhi ze-chip.Izinga lokushisa elilinganiselwe eliphezulu lekristalu (ngaphezu kuka-6000C) likuvumela ukuthi udale amadivaysi anokwethenjelwa kakhulu ngezimo zokusebenza ezinzima nezinhlelo zokusebenza ezikhethekile.Njengamanje, singahlinzeka ngamawafa amancane angama-200mmSiC ngokuqhubekayo nangokuqhubekayo futhi sibe nesitoko esithile endaweni yokugcina impahla.

Ukucaciswa

Inombolo	Into	Iyunithi	Ukukhiqiza	Ucwaningo	Dummy
1. Amapharamitha
1.1	i-polytype	--	4H	4H	4H
1.2	ukuma komhlaba	°	<11-20>4±0.5	<11-20>4±0.5	<11-20>4±0.5
2. Ipharamitha kagesi
2.1	i-dopant	--	n-uhlobo lweNitrojeni	n-uhlobo lweNitrojeni	n-uhlobo lweNitrojeni
2.2	ukumelana	ohm ·cm	0.015~0.025	0.01~0.03	NA
3. Ipharamitha yemishini
3.1	ububanzi	mm	200±0.2	200±0.2	200±0.2
3.2	ukujiya	μm	500±25	500±25	500±25
3.3	I-Notch orientation	°	[1- 100]±5	[1- 100]±5	[1- 100]±5
3.4	Ukujula Kwenotshi	mm	1~1.5	1~1.5	1~1.5
3.5	I-LTV	μm	≤5(10mm*10mm)	≤5(10mm*10mm)	≤10(10mm*10mm)
3.6	I-TTV	μm	≤10	≤10	≤15
3.7	Khothama	μm	-25 ~ 25	- 45-45	- 65-65
3.8	I-Wap	μm	≤30	≤50	≤70
3.9	I-AFM	nm	I-Ra≤0.2	I-Ra≤0.2	I-Ra≤0.2
4. Isimo
4.1	ukuminyana kwe-micropipe	eya cm2	≤2	≤10	≤50
4.2	okuqukethwe kwensimbi	ama-athomu/cm2	≤1E11	≤1E11	NA
4.3	I-TSD	eya cm2	≤500	≤1000	NA
4.4	I-BPD	eya cm2	≤2000	≤5000	NA
4.5	I-TED	eya cm2	≤7000	≤10000	NA
5. Ikhwalithi enhle
5.1	ngaphambili	--	Si	Si	Si
5.2	ukuphela kwendawo	--	I-Si-face CMP	I-Si-face CMP	I-Si-face CMP
5.3	izinhlayiyana	i/isinkwa	≤100(usayizi≥0.3μm)	NA	NA
5.4	ukunwaya	i/isinkwa	≤5, Ubude Obuphelele≤200mm	NA	NA
5.5	Umphetho ama-chips/ama-indenti/imifantu/amabala/ukungcola	--	Lutho	Lutho	NA
5.6	Izindawo ze-Polytype	--	Lutho	Indawo ≤10%	Indawo ≤30%
5.7	ukumaka ngaphambili	--	Lutho	Lutho	Lutho
6. Ikhwalithi yangemuva
6.1	buyela emuva	--	I-C-face MP	I-C-face MP	I-C-face MP
6.2	ukunwaya	mm	NA	NA	NA
6.3	Ingemuva elinamaphutha onqenqemeni ama-chips/ama-indenti	--	Lutho	Lutho	NA
6.4	Ukuqina kweqolo	nm	Ra≤5	Ra≤5	Ra≤5
6.5	Ukumaka emuva	--	Inothi	Inothi	Inothi
7. Umphetho
7.1	umphetho	--	I-Chamfer	I-Chamfer	I-Chamfer
8. Iphakheji
8.1	ukupakisha	--	I-Epi ilungile nge-vacuum ukupakisha	I-Epi ilungile nge-vacuum ukupakisha	I-Epi ilungile nge-vacuum ukupakisha
8.2	ukupakisha	--	I-Multi-wafer ukupakishwa kwekhasethi	I-Multi-wafer ukupakishwa kwekhasethi	I-Multi-wafer ukupakishwa kwekhasethi