Ibanga le-8Inch 200mm 4H-N SiC Wafer Conductive dummy research grade

Incazelo emfushane:

Njengoba ezokuthutha, izimakethe zamandla nezimboni zishintsha, isidingo sezinto zikagesi ezithembekile, ezisebenza kahle ziyaqhubeka nokukhula.Ukuze kuhlangatshezwane nezidingo zokusebenza okuthuthukisiwe kwe-semiconductor, abakhiqizi bedivayisi babheke ezintweni ezisetshenziswayo ze-semiconductor ebanzi, njengephothifoliyo yethu ye-4H SiC Prime Grade yama-wafers we-4H n -type silicon carbide (SiC).


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ngenxa yezakhiwo zayo ezihlukile zomzimba neze-elekthronikhi, impahla ye-wafer semiconductor engu-200mm SiC isetshenziselwa ukwakha izinto zikagesi ezisebenza kahle, ezishisa kakhulu, ezingazweli emisebeni, kanye nezisetshenziswa zikagesi ezisebenza kakhulu.Intengo ye-substrate engu-8inch SiC iyancipha kancane kancane njengoba ubuchwepheshe buthuthuka kakhulu futhi nesidingo sikhula.Intuthuko yakamuva yobuchwepheshe iholela ekukhiqizeni isikali sokukhiqiza amawafa angama-200mm SiC.Izinzuzo eziyinhloko zezinto ezisetshenziswayo ze-SiC wafer semiconductor uma kuqhathaniswa namawafa e-Si kanye nama-GaAs: Amandla enkambu kagesi engu-4H-SiC ngesikhathi sokuwohloka kwe-avalanche angaphezulu kwe-oda lobukhulu obuphezulu kunamanani ahambisanayo we-Si kanye nama-GaAs.Lokhu kuholela ekwehleni okukhulu kwe-on-state resistivity Ron.I-Low on-state resistivity, ehlangene ne-high density yamanje kanye ne-thermal conductivity, ivumela ukusetshenziswa kokufa okuncane kakhulu kumadivayisi wamandla.Ukushisa okuphezulu kwe-SiC kunciphisa ukumelana nokushisa kwe-chip.Izakhiwo ze-elekthronikhi zamadivayisi asekelwe kuma-wafers e-SiC azinzile kakhulu ngokuhamba kwesikhathi nasezingeni lokushisa elizinzile, okuqinisekisa ukuthembeka okuphezulu kwemikhiqizo.I-silicon carbide imelana ngokwedlulele emisebeni eqinile, engonakalisi izakhiwo zikagesi ze-chip.Izinga lokushisa elilinganiselwe eliphezulu lekristalu (ngaphezu kuka-6000C) likuvumela ukuthi udale amadivaysi athembeke kakhulu ngezimo zokusebenza ezinzima nezinhlelo zokusebenza ezikhethekile.Njengamanje, singahlinzeka ngamawafa amancane angama-200mmSiC ngokuqhubekayo nangokuqhubekayo futhi sibe nesitoko esithile endaweni yokugcina impahla.

Ukucaciswa

Inombolo Into Iyunithi Ukukhiqiza Ucwaningo Dummy
1. Amapharamitha
1.1 i-polytype -- 4H 4H 4H
1.2 ukuma komhlaba ° <11-20>4±0.5 <11-20>4±0.5 <11-20>4±0.5
2. Ipharamitha kagesi
2.1 i-dopant -- n-uhlobo lweNitrojeni n-uhlobo lweNitrojeni n-uhlobo lweNitrojeni
2.2 ukumelana ohm ·cm 0.015~0.025 0.01~0.03 NA
3. Ipharamitha yemishini
3.1 ububanzi mm 200±0.2 200±0.2 200±0.2
3.2 ukujiya μm 500±25 500±25 500±25
3.3 I-Notch orientation ° [1- 100]±5 [1- 100]±5 [1- 100]±5
3.4 Ukujula Kwenotshi mm 1~1.5 1~1.5 1~1.5
3.5 I-LTV μm ≤5(10mm*10mm) ≤5(10mm*10mm) ≤10(10mm*10mm)
3.6 I-TTV μm ≤10 ≤10 ≤15
3.7 Khothama μm -25 ~ 25 - 45-45 - 65-65
3.8 I-Wap μm ≤30 ≤50 ≤70
3.9 I-AFM nm I-Ra≤0.2 I-Ra≤0.2 I-Ra≤0.2
4. Isimo
4.1 ukuminyana kwe-micropipe eya cm2 ≤2 ≤10 ≤50
4.2 okuqukethwe kwensimbi ama-athomu/cm2 ≤1E11 ≤1E11 NA
4.3 I-TSD eya cm2 ≤500 ≤1000 NA
4.4 I-BPD eya cm2 ≤2000 ≤5000 NA
4.5 I-TED eya cm2 ≤7000 ≤10000 NA
5. Ikhwalithi enhle
5.1 ngaphambili -- Si Si Si
5.2 ukuphela kwendawo -- I-Si-face CMP I-Si-face CMP I-Si-face CMP
5.3 izinhlayiyana i/isinkwa ≤100(usayizi≥0.3μm) NA NA
5.4 ukunwaya i/isinkwa ≤5, Ubude Obuphelele≤200mm NA NA
5.5 Umphetho
ama-chips/ama-indenti/imifantu/amabala/ukungcola
-- Lutho Lutho NA
5.6 Izindawo ze-Polytype -- Lutho Indawo ≤10% Indawo ≤30%
5.7 ukumaka ngaphambili -- Lutho Lutho Lutho
6. Ikhwalithi yangemuva
6.1 buyela emuva -- I-C-face MP I-C-face MP I-C-face MP
6.2 ukunwaya mm NA NA NA
6.3 Ingemuva elinamaphutha onqenqemeni
ama-chips/ama-indenti
-- Lutho Lutho NA
6.4 Ukuqina kweqolo nm Ra≤5 Ra≤5 Ra≤5
6.5 Ukumaka emuva -- Inothi Inothi Inothi
7. Umphetho
7.1 umphetho -- I-Chamfer I-Chamfer I-Chamfer
8. Iphakheji
8.1 ukupakisha -- I-Epi ilungile nge-vacuum
ukupakisha
I-Epi ilungile nge-vacuum
ukupakisha
I-Epi ilungile nge-vacuum
ukupakisha
8.2 ukupakisha -- I-Multi-wafer
ukupakishwa kwekhasethi
I-Multi-wafer
ukupakishwa kwekhasethi
I-Multi-wafer
ukupakishwa kwekhasethi

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