8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lokukhiqiza ibanga 500um ukujiya

8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lokukhiqiza Ibanga elingu-500um ubukhulu Isithombe Esifakiwe

Incazelo emfushane:

I-Shanghai Xinkehui Tech.I-Co., Ltd inikeza ukukhetha okuhle kakhulu nezintengo zamawafa e-silicon carbide ekhwalithi ephezulu futhi ihlanganisa amadayamitha angu-8inch anezinhlobo ze-N- kanye ne-semi-insulating.Izinkampani ezincane nezinkulu zemishini ye-semiconductor namalebhu ocwaningo asetshenziswa emhlabeni wonke futhi athembele kumawafa ethu e-silicone carbide.

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Omaka bomkhiqizo

200mm 8inch SiC Substrate Specification

Usayizi: 8inch;

Ububanzi: 200mm±0.2;

Ubukhulu: 500um±25;

I-Surface Orientation: 4 ibheke ku- [11-20] ± 0.5 °;

I-Notch orientation:[1-100]±1°;

Ukujula kwenotshi: 1±0.25mm;

I-Micropipe: <1cm2;

I-Hex Plates: Azikho Ezivunyelwe;

Ukumelana: 0.015~0.028Ω;

I-EPD:<8000cm2;

I-TED: <6000cm2

I-BPD: <2000cm2

I-TSD: <1000cm2

SF: indawo<1%

I-TTV≤15um

I-Warp≤40um

Bow≤25um

Izindawo ze-Poly: ≤5%;

Ukuklwebha: <5 kanye Nobude Obuqongelelayo< 1 Wafer Diameter;

Ama-Chips/Ama-Indenti: Ayikho evumela ukuthi D>0.5mm Ububanzi Nokujula;

Imifantu: Akukho;

Stain: Lutho

I-wafer edge: i-Chamfer;

Ukuqedwa kwendawo: I-Double Side Polish, i-Si Face CMP;

Ukupakisha: Ikhasethi elinesinkwa esilucwecwana noma Isitsha Esiyisinkwa Esikodwa;

Ubunzima bamanje ekulungiseleleni amakristalu angama-200mm 4H-SiC mainl

1) Ukulungiswa kwamakristalu embewu angu-200mm 4H-SiC aphezulu;

2) Inkambu yokushisa yobukhulu obukhulu obungafani kanye nokulawulwa kwenqubo ye-nucleation;

3) Ukusebenza kahle kwezokuthutha kanye nokuvela kwezingxenye zegesi ekwandiseni izinhlelo zokukhula kwekristalu;

I-4) Ukuqhekeka kwe-Crystal kanye nokwanda kokukhubazeka okubangelwa ukwanda kobukhulu bokucindezeleka okushisayo.

Ukuze unqobe lezi zinselelo futhi uthole izixazululo zekhwalithi eziphezulu ze-SiC ezingama-200mm ziyaphakanyiswa:

Ngokuphathelene nokulungiswa kwekristalu yembewu engu-200mm, inkambu yokugeleza kwezinga lokushisa efanele, kanye nomhlangano okhulayo kwacwaningwa futhi kwaklanywa ukucabangela izinga lekristalu nosayizi okhulayo;Ukuqala ngekristalu engu-150mm SiC se:d, yenza i-crystal iteration yembewu ukuze ukhulise kancane kancane i-SiC crystal size ifinyelele ku-200mm;Ngokukhula kwamakristalu amaningi kanye ne-processiig, thuthukisa kancane kancane ikhwalithi yekristalu endaweni enwebekayo, futhi uthuthukise ikhwalithi yamakristalu embewu angu-200mm.

Mayelana nokulungiswa kwekristalu engu-200mm ne-substrate, ucwaningo lwenze kahle izinga lokushisa kanye nedizayini yenkundla yokugeleza yosayizi omkhulu wekristalu, yenza ukukhula kwekristalu ye-SiC conductive engu-200mm, nokulawula ukufana kwe-doping.Ngemuva kokucutshungulwa okungalungile nokubunjwa kwekristalu, ingot engu-8-inchelectricly conductive 4H-SiC enobubanzi obujwayelekile yatholwa.Ngemuva kokusika, ukugaya, ukupholisha, ukucubungula ukuze uthole ama-wafers we-SiC 200mm anogqinsi lwama-525um noma ngaphezulu.