100mm 4inch GaN ku-Sapphire Epi-layer wafer Gallium nitride epitaxial wafer

(1) Ukushisa okuphezulu kokubhaka, i-sapphire substrate iqala ukushiswa ku-1050 ℃ emkhathini we-hydrogen, inhloso ukuhlanza indawo engaphansi;

(2) Lapho izinga lokushisa elingaphansi komhlaba lehla laya ku-510℃, ungqimba olunezinga lokushisa eliphansi lwe-GaN/AlN lwebhafa enogqinsi oluwu-30nm lufakwa phezu kwendawo engaphansi yesafire;

(3) Izinga lokushisa likhuphukela ku-10 ℃, igesi yokusabela i-ammonia, i-trimethylgallium ne-silane iyajovwa, ngokulandelanayo ilawula izinga lokugeleza elihambisanayo, kanye ne-silicon-doped N-type GaN engu-4um ukujiya;

(4) Igesi yokusabela ye-trimethyl aluminium ne-trimethyl gallium yasetshenziselwa ukulungisa amazwekazi e-silicon-doped N-type A⒑ enogqinsi luka-0.15um;

(5) I-50nm ye-Zn-doped InGaN yalungiswa ngokujova i-trimethylgallium, i-trimethylindium, i-diethylzinc ne-ammonia ekushiseni kwe-8O0℃ nokulawula amazinga okugeleza ahlukene ngokulandelana;

(6) Izinga lokushisa lenyuswe laya ku-1020℃, i-trimethylaluminum, trimethylgallium ne-bis (cyclopentadienyl) i-magnesium yajovwa ukuze kulungiswe i-0.15um Mg doped P-type AlGaN kanye ne-0.5um Mg doped P-type G ye-glucose yegazi;

(7) Ifilimu yekhwalithi ephezulu yohlobo lwe-P ye-GaN Sibuyan yatholwa ngokufakwa emkhathini wenitrogen ku-700℃;

(8) Ukunamathisela endaweni ye-stasis yohlobo lwe-P ukuze kwembule indawo ye-N-uhlobo G;

(9) Ukuhwamuka kwamapuleti okuxhumana e-Ni/A endaweni ye-p-GaNI, ukuhwamuka kwamapuleti △/Al othintana naye endaweni eyi-ll-GaN ukuze kwakheke ama-electrode.