150mm 200mm 6inch 8inch GaN ku-Silicon Epi-layer wafer Gallium nitride epitaxial wafer

Incazelo emfushane:

I-GaN Epi-layer wafer engama-intshi angu-6 iwumkhiqizo wekhwalithi ephezulu we-semiconductor ohlanganisa izendlalelo ze-gallium nitride (GaN) etshalwe ku-silicon substrate.Izinto ezisetshenziswayo zinezindawo ezinhle kakhulu zokuhamba zikagesi futhi zilungele ukukhiqiza amadivaysi anamandla amakhulu kanye nama-high-frequency semiconductor.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Indlela yokukhiqiza

Inqubo yokukhiqiza ibandakanya ukukhulisa izendlalelo ze-GaN endaweni engaphansi yesafire kusetshenziswa amasu athuthukile njenge-metal-organic chemical vapor deposition (MOCVD) noma i-molecular beam epitaxy (MBE).Inqubo yokubeka yenziwa ngaphansi kwezimo ezilawulwayo ukuze kuqinisekiswe ikhwalithi ephezulu yekristalu nefilimu efanayo.

Izinhlelo zokusebenza ze-GaN-On-Sapphire ezingu-6inch: Ama-chips e-sapphire substrate angu-6 asetshenziswa kakhulu kwezokuxhumana nge-microwave, izinhlelo ze-radar, ubuchwepheshe obungenawaya kanye ne-optoelectronics.

Ezinye izinhlelo zokusebenza ezijwayelekile zihlanganisa

1. Isikhulisi samandla e-Rf

2. Imboni yezibani ze-LED

3. Imishini yokuxhumana yenethiwekhi engenantambo

4. Imishini kagesi endaweni yokushisa ephezulu

5. Imishini ye-Optoelectronic

Imininingwane yomkhiqizo

- Usayizi: Ububanzi be-substrate bungama-intshi angu-6 (cishe 150 mm).

- Ikhwalithi yobuso: Ingaphezulu lipholishwe kahle ukuze linikeze ikhwalithi yesibuko esihle kakhulu.

- Ubukhulu: Ugqinsi lwesendlalelo se-GaN lungenziwa ngezifiso ngokuya ngezidingo ezithile.

- Ukupakisha: I-substrate igcwele ngokucophelela izinto eziphikisana ne-static ukuvimbela ukulimala ngesikhathi sokuthutha.

- Imiphetho yokuma: I-substrate inemiphetho ethile yokuma eyenza kube lula ukuqondanisa nokusebenza ngesikhathi sokulungiselela idivayisi.

- Eminye imingcele: Imingcele ethile efana nokuncipha, ukumelana nokugxilwa kwe-doping ingalungiswa ngokuvumelana nezidingo zamakhasimende.

Ngezakhiwo zabo ezibonakalayo eziphakeme kanye nezinhlelo zokusebenza ezihlukahlukene, ama-wafers e-sapphire substrate angama-intshi angu-6 ayisinqumo esithembekile sokuthuthukiswa kwamadivayisi we-semiconductor asebenza kahle ezimbonini ezihlukahlukene.

I-substrate	6” 1mm <111> p-uhlobo Si	6” 1mm <111> p-uhlobo Si
I-Epi ThickAvg	~5 um	~7 um
Epi ThickUnif	<2%	<2%
Khothama	+/-45um	+/-45um
Ukuqhekeka	<5mm	<5mm
I-BV eqondile	> 1000V	> 1400V
I-HEMT Al%	25-35%	25-35%
HEMT ThickAvg	20-30nm	20-30nm
Insitu SiN Cap	5-60nm	5-60nm
Isilinganiso se-2DEG	~10¹³cm^-2	~10¹³cm^-2
Ukuhamba	~ 2000cm²/Vs (<2%)	~ 2000cm²/Vs (<2%)
Rsh	<330ohm/sq (<2%)	<330ohm/sq (<2%)