200mm 8inch GaN ku-sapphire Epi-layer wafer substrate

200mm 8inch GaN ku-sapphire I-Epi-layer wafer substrate Isithombe Esifakiwe

Incazelo emfushane:

Inqubo yokukhiqiza ibandakanya ukukhula kwe-epitaxial kongqimba lwe-GaN ku-Sapphire substrate kusetshenziswa amasu athuthukile njenge-metal-organic chemical vapor deposition (MOCVD) noma i-molecular beam epitaxy (MBE). Ukufakwa kwenziwa ngaphansi kwezimo ezilawulwayo ukuze kuqinisekiswe ikhwalithi ephezulu yekristalu nokufana kwefilimu.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Isingeniso somkhiqizo

I-GaN-on-Sapphire substrate engama-intshi angu-8 iyisisetshenziswa sezinga eliphezulu se-semiconductor esakhiwe ungqimba lwe-Gallium Nitride (GaN) olukhule ku-Sapphire substrate. Le nto inikezela ngezinto ezinhle kakhulu zokuhamba nge-elekthronikhi futhi ilungele ukwenziwa kwamadivayisi anamandla amakhulu kanye nama-high-frequency semiconductor.

Indlela Yokukhiqiza

Izinhlelo zokusebenza

I-substrate ye-GaN-on-Sapphire engu-8 intshi ithola izinhlelo zokusebenza ezibanzi emikhakheni eyahlukene ehlanganisa ukuxhumana kwe-microwave, amasistimu e-radar, ubuchwepheshe obungenawaya, kanye ne-optoelectronics. Ezinye zezinhlelo zokusebenza ezijwayelekile zifaka:

1. Izikhulisamandla ze-RF

2. Imboni yezibani ze-LED

3. Imishini yokuxhumana yenethiwekhi engenantambo

4. Imishini kagesi yendawo enezinga eliphezulu lokushisa

5. Oamadivaysi e-ptoelectronic

Imininingwane Yomkhiqizo

-Ubukhulu: Usayizi we-substrate ungama-intshi angu-8 (200 mm) ububanzi.

- Ikhwalithi Yobuso: Ingaphezulu lipholishelwe izinga eliphezulu lokushelela futhi libonisa ikhwalithi enhle kakhulu efana nesibuko.

- Ubukhulu: Ugqinsi lwesendlalelo se-GaN lungenziwa ngendlela oyifisayo ngokusekelwe ezidingweni ezithile.

- Ukupakishwa: I-substrate ihlanganiswe ngokucophelela ezintweni ezilwa ne-static ukuvimbela ukulimala ngesikhathi sokuthutha.

- I-Orientation Flat: I-substrate ineflethi yokuma ethile ukuze isize ekuqondaniseni kwe-wafer nokubamba ngesikhathi sezinqubo zokwenziwa kwedivayisi.

- Eminye imingcele: Ukucaciswa kokuqina, ukumelana, kanye nokugxila kwe-dopant kungalungiswa ngokwezidingo zekhasimende ngalinye.

Ngezakhiwo zayo zezinto ezibonakalayo eziphakeme kanye nezinhlelo zokusebenza eziguquguqukayo, i-substrate ye-GaN-on-Sapphire engu-8-intshi iyisinqumo esithembekile sokuthuthukiswa kwamadivayisi asebenza kahle e-semiconductor ezimbonini ezihlukahlukene.

Ngaphandle kwe-GaN-On-Sapphire, singanikeza futhi emkhakheni wezinhlelo zokusebenza zedivayisi yamandla, umndeni womkhiqizo uhlanganisa ama-wafers epitaxial angu-8-inch AlGaN/GaN-on-Si kanye ne-8-inch P-cap AlGaN/GaN-on-Si epitaxial izinkwa eziwucwecwe. Ngesikhathi esifanayo, sisungule ukusetshenziswa kobuchwepheshe bayo obuthuthukisiwe be-GaN epitaxy obungu-8-intshi endaweni ye-microwave, futhi sathuthukisa i-wafer ye-AlGaN/GAN-on-HR Si epitaxy engu-8-intshi ehlanganisa ukusebenza okuphezulu nosayizi omkhulu, izindleko eziphansi. futhi ihambisana nokucutshungulwa kwedivayisi okujwayelekile kwamayintshi angu-8. Ngokungeziwe ku-silicon-based gallium nitride, siphinde sibe nomugqa womkhiqizo we-AlGaN/GaN-on-SiC epitaxial wafers ukuhlangabezana nezidingo zamakhasimende zezinto zokwakha ze-silicon-based gallium nitride epitaxial.