I-GaN engu-200mm engu-8inch ku-substrate ye-sapphire Epi-layer wafer

I-GaN engu-200mm engu-8inch ku-sapphire Epi-layer wafer substrate Isithombe Esifakiwe

Incazelo emfushane:

Inqubo yokukhiqiza ihilela ukukhula kwe-epitaxial kwesendlalelo se-GaN ku-substrate ye-Sapphire kusetshenziswa amasu athuthukile njenge-metal-organic chemical vapor deposition (MOCVD) noma i-molecular beam epitaxy (MBE). Ukufakwa kwenziwa ngaphansi kwezimo ezilawulwayo ukuqinisekisa ikhwalithi ephezulu yekristalu kanye nokufana kwefilimu.

Sithumelele i-imeyili

Izici

Isingeniso somkhiqizo

I-substrate ye-GaN-on-Sapphire engamasentimitha angu-8 iyinto ye-semiconductor esezingeni eliphezulu eyakhiwe ungqimba lwe-Gallium Nitride (GaN) olukhulele kwi-substrate ye-Sapphire. Le nto inikeza izakhiwo ezinhle kakhulu zokuthutha nge-elekthronikhi futhi ilungele ukwenziwa kwamadivayisi we-semiconductor anamandla aphezulu kanye nemvamisa ephezulu.

Indlela Yokukhiqiza

Izicelo

I-substrate ye-GaN-on-Sapphire engamasentimitha angu-8 ithola izinhlelo zokusebenza eziningi emikhakheni eyahlukene okuhlanganisa ukuxhumana nge-microwave, izinhlelo ze-radar, ubuchwepheshe obungenantambo, kanye ne-optoelectronics. Ezinye zezinhlelo zokusebenza ezivamile zifaka:

1. Ama-amplifiers kagesi e-RF

2. Imboni yokukhanyisa ye-LED

3. Amadivayisi okuxhumana kwenethiwekhi angenantambo

4. Amadivayisi kagesi ezindawo ezishisa kakhulu

5. Oamadivayisi e-ptoelectronic

Imininingwane Yomkhiqizo

-Ubukhulu: Usayizi we-substrate ungamasentimitha angu-8 (200 mm) ububanzi.

- Ikhwalithi Yomphezulu: Umphezulu upholishwe ngezinga eliphezulu lokushelela futhi ubonisa ikhwalithi enhle kakhulu efana nesibuko.

- Ubukhulu: Ubukhulu besendlalelo se-GaN bungenziwa ngokwezifiso ngokusekelwe ezidingweni ezithile.

- Ukupakisha: I-substrate ipakishwe ngokucophelela ngezinto ezingashintshi ukuze kuvinjelwe umonakalo ngesikhathi sokuthutha.

- Ukuqondiswa Okuyisicaba: I-substrate inesicaba esithile sokuqondiswa ukusiza ekuqondisweni nasekuphathweni kwe-wafer ngesikhathi sezinqubo zokwenziwa kwedivayisi.

- Amanye amapharamitha: Imininingwane yobukhulu, ukumelana, kanye nokuhlushwa kwe-dopant ingalungiswa ngokwezidingo zamakhasimende.

Ngezakhiwo zayo ezisezingeni eliphezulu kanye nezinhlelo zokusebenza eziguquguqukayo, i-substrate ye-GaN-on-Sapphire engamasentimitha angu-8 iyisinqumo esithembekile sokuthuthukiswa kwamadivayisi e-semiconductor asebenza kahle kakhulu ezimbonini ezahlukahlukene.

Ngaphandle kwe-GaN-On-Sapphire, singaphinde sinikeze emkhakheni wezinhlelo zokusebenza zamadivayisi kagesi, umndeni womkhiqizo uhlanganisa ama-wafer epitaxial angu-8-intshi e-AlGaN/GaN-on-Si kanye nama-wafer epitaxial angu-8-intshi e-P-cap e-AlGaN/GaN-on-Si. Ngesikhathi esifanayo, sisungule ukusetshenziswa kobuchwepheshe baso obuthuthukisiwe be-epitaxy ye-GaN engu-8-intshi ensimini ye-microwave, futhi sakha i-wafer ye-epitaxy ye-AlGaN/GAN-on-HR Si engu-8-intshi ehlanganisa ukusebenza okuphezulu nosayizi omkhulu, izindleko eziphansi futhi ehambisana nokucutshungulwa kwedivayisi okujwayelekile okungu-8-intshi. Ngaphezu kwe-gallium nitride esekelwe ku-silicon, sinomugqa womkhiqizo wama-wafer epitaxial e-AlGaN/GaN-on-SiC ukuhlangabezana nezidingo zamakhasimende zezinto ze-epitaxial ezisekelwe ku-silicon.