100mm 4inch GaN ku-Sapphire Epi-layer wafer Gallium nitride epitaxial wafer

Incazelo emfushane:

Ishidi le-Gallium nitride epitaxial lingummeleli ojwayelekile wesizukulwane sesithathu se-wide band gap semiconductor epitaxial materials, enezakhiwo ezinhle kakhulu njengegebe lebhendi elibanzi, amandla ensimu ephukile, amandla aphezulu okushisa, isivinini sokukhukhuleka kwe-electron ephezulu, ukumelana nokushisa okuqinile nokuphezulu. ukuzinza kwamakhemikhali.

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Imininingwane Yomkhiqizo

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Inqubo yokukhula ye-GaN blue LED quantum well structure. Ukugeleza kwenqubo enemininingwane imi kanje

(1) Ukushisa okuphezulu kokubhaka, i-sapphire substrate iqala ukushiswa ku-1050 ℃ emkhathini we-hydrogen, inhloso ukuhlanza indawo engaphansi;

(2) Lapho izinga lokushisa elingaphansi komhlaba lehla laya ku-510℃, ungqimba olunezinga lokushisa eliphansi lwe-GaN/AlN lwebhafa enogqinsi oluwu-30nm lufakwa phezu kwendawo engaphansi yesafire;

(3) Izinga lokushisa likhuphukela ku-10 ℃, igesi yokusabela i-ammonia, i-trimethylgallium ne-silane iyajovwa, ngokulandelanayo ilawula izinga lokugeleza elihambisanayo, kanye ne-silicon-doped N-type GaN engu-4um ukujiya;

(4) Igesi yokusabela ye-trimethyl aluminium ne-trimethyl gallium yasetshenziselwa ukulungisa amazwekazi e-silicon-doped N-type A⒑ enogqinsi luka-0.15um;

(5) I-50nm ye-Zn-doped InGaN yalungiswa ngokujova i-trimethylgallium, i-trimethylindium, i-diethylzinc ne-ammonia ekushiseni kwe-8O0℃ nokulawula amazinga okugeleza ahlukene ngokulandelana;

(6) Izinga lokushisa lenyuswe laya ku-1020℃, i-trimethylaluminum, trimethylgallium ne-bis (cyclopentadienyl) i-magnesium yajovwa ukuze kulungiswe i-0.15um Mg doped P-type AlGaN kanye ne-0.5um Mg doped P-type G ye-glucose yegazi;

(7) Ifilimu yekhwalithi ephezulu yohlobo lwe-P ye-GaN Sibuyan yatholwa ngokufakwa emkhathini wenitrogen ku-700℃;

(8) Ukunamathisela endaweni ye-stasis yohlobo lwe-P ukuze kwembule indawo ye-N-uhlobo G;

(9) Ukuhwamuka kwamapuleti okuxhumana e-Ni/A endaweni ye-p-GaNI, ukuhwamuka kwamapuleti △/Al othintana naye endaweni eyi-ll-GaN ukuze kwakheke ama-electrode.

Imininingwane

Into	I-GaN-TCU-C100	I-GaN-TCN-C100
Ubukhulu	e 100 mm ± 0.1 mm
Ubukhulu	4.5±0.5 um Ingenziwa ngezifiso
Ukuqondisa	Indiza ye-C(0001) ±0.5°
Uhlobo Lokuqhuba	N-uhlobo (Akususiwe)	N-uhlobo (Si-doped)
Ukungazweli(300K)	<0.5 Q・cm	<0.05 Q・cm
I-Carrier Concentration	<5x10¹⁷cm^-3	> 1x10¹⁸cm^-3
Ukuhamba	~ 300 cm²/Vs	~ 200 cm²/Vs
Ukuminyana Kokususwa	Ngaphansi kuka-5x10⁸cm^-2(kubalwe ama-FWHM e-XRD)
Isakhiwo se-substrate	I-GaN on Sapphire(Okujwayelekile: Inketho ye-SSP: DSP)
Indawo Esetshenziswayo Yobuso	> 90%
Iphakheji	Ipakishwe endaweni yegumbi elihlanzekile lekilasi elingu-100, kumakhasethi angama-25pcs noma ezitsheni eziyisinkwa esiyisinkwa esisodwa, ngaphansi kwesimo se-nitrogen.