I-wafer ye-4H-N HPSI SiC 6H-N 6H-P 3C-N SiC Epitaxial ye-MOS noma i-SBD
I-SiC Substrate I-SiC Epi-wafer Brief
Sinikeza iphothifoliyo ephelele yama-substrate e-SiC asezingeni eliphezulu kanye nama-sic wafer kuma-polytype amaningi kanye namaphrofayili e-doping—kufaka phakathi i-4H-N (n-type conductive), i-4H-P (p-type conductive), i-4H-HPSI (high-purity semi-insulating), kanye ne-6H-P (p-type conductive)—ngobubanzi obusukela ku-4″, 6″, kanye no-8″ kuze kufike ku-12″. Ngaphandle kwama-substrate angenalutho, izinsizakalo zethu zokukhula kwe-epi wafer ezingeziwe zinikeza ama-epitaxial (epi) wafer anobukhulu obulawulwa kahle (1–20 µm), amazinga e-doping, kanye nobuningi beziphambeko.
I-sic wafer ngayinye kanye ne-epi wafer zihlolwa ngokuqinile emgqeni (ubuningi be-micropipe <0.1 cm⁻², ubulukhuni bomphezulu i-Ra <0.2 nm) kanye nokucaciswa okugcwele kukagesi (i-CV, imephu yokumelana) ukuqinisekisa ukufana nokusebenza kwekristalu okumangalisayo. Kungakhathaliseki ukuthi kusetshenziselwa amamojula kagesi kagesi, ama-amplifiers e-RF avame kakhulu, noma amadivayisi e-optoelectronic (ama-LED, ama-photodetector), imigqa yethu yomkhiqizo we-SiC substrate kanye ne-epi wafer iletha ukuthembeka, ukuzinza kokushisa, kanye namandla okuqhekeka adingekayo yizinhlelo zokusebenza zanamuhla ezidinga kakhulu.
Izakhiwo zohlobo lwe-SiC Substrate 4H-N kanye nokusetshenziswa kwayo
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Isakhiwo se-4H-N SiC substrate i-Polytype (Hexagonal)
Igebe elibanzi le-~3.26 eV liqinisekisa ukusebenza kukagesi okuzinzile kanye nokuqina kokushisa ngaphansi kwezimo zokushisa okuphezulu kanye nezinkundla zikagesi eziphezulu.
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I-substrate ye-SiCUkuphuza Utshwala Kohlobo Olu-N
Ukulawulwa kahle kwe-nitrogen doping kuveza ukugcwala kokuthwala kusuka ku-1×10¹⁶ kuya ku-1×10¹⁹ cm⁻³ kanye nokuhamba kwama-electron okushisa kwegumbi kuze kufike ku-~900 cm²/V·s, okunciphisa ukulahleka kokuqhuba.
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I-substrate ye-SiCUkumelana Okubanzi Nokulingana
Ububanzi bokumelana obutholakalayo obungu-0.01–10 Ω·cm kanye nobukhulu be-wafer obungu-350–650 µm obunokubekezelelana okungu-±5% kokubili ekusebenziseni izidakamizwa kanye nobukhulu—bulungele ukwenziwa kwamadivayisi anamandla amakhulu.
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I-substrate ye-SiCUbuningi obuphelele obuphansi kakhulu
Ubuningi be-micropipe < 0.1 cm⁻² kanye nobukhulu be-basal-plane dislocation < 500 cm⁻², okuletha > 99% isivuno sedivayisi kanye nobuqotho bekristalu obuphezulu.
- I-substrate ye-SiCUkuqhuba Okushisayo Okungavamile
Ukushisa okufika ku-~370 W/m·K kwenza kube lula ukususa ukushisa okuphumelelayo, kukhulisa ukuthembeka kwedivayisi kanye nobuningi bamandla.
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I-substrate ye-SiCIzinhlelo Zokusebenza Eziqondiwe
Ama-SiC MOSFET, ama-Schottky diode, amamojula kagesi namadivayisi e-RF okushayela izimoto zikagesi, ama-solar inverters, ama-industrial drive, izinhlelo zokudonsa, kanye nezinye izimakethe zikagesi ezidinga amandla.
Imininingwane ye-SiC wafer yohlobo lwe-6 intshi engu-4H-N | ||
| Impahla | Ibanga Lokukhiqiza le-MPD Elingenalutho (Ibanga le-Z) | Ibanga Eliyimbumbulu (Ibanga D) |
| Ibanga | Ibanga Lokukhiqiza le-MPD Elingenalutho (Ibanga le-Z) | Ibanga Eliyimbumbulu (Ibanga D) |
| Ububanzi | 149.5 mm - 150.0 mm | 149.5 mm - 150.0 mm |
| Uhlobo lwe-Poly | 4H | 4H |
| Ubukhulu | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Ukuqondiswa kwe-Wafer | I-axis evaliwe: 4.0° ibheke ku-<1120> ± 0.5° | I-axis evaliwe: 4.0° ibheke ku-<1120> ± 0.5° |
| Ubuningi be-Micropipe | ≤ 0.2 cm² | ≤ 15 cm² |
| Ukumelana | 0.015 - 0.024 Ω·cm | 0.015 - 0.028 Ω·cm |
| Ukuqondiswa Okuyisisekelo Okuyisicaba | [10-10] ± 50° | [10-10] ± 50° |
| Ubude Obuphansi Obuyinhloko | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Ukukhishwa Komphetho | 3 mm | 3 mm |
| I-LTV/TIV / Umnsalo / I-Warp | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Ubulukhuni | I-Polish Ra ≤ 1 nm | I-Polish Ra ≤ 1 nm |
| I-CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Imifantu Yomphetho Ngokukhanya Okunamandla Okuphezulu | Ubude obuhlanganisiwe ≤ 20 mm ubude obubodwa ≤ 2 mm | Ubude obuhlanganisiwe ≤ 20 mm ubude obubodwa ≤ 2 mm |
| Amapuleti e-Hex Ngokukhanya Okuphezulu | Indawo eqongelelekayo ≤ 0.05% | Indawo ehlanganisiwe ≤ 0.1% |
| Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu | Indawo eqongelelekayo ≤ 0.05% | Indawo eqongelelekayo ≤ 3% |
| Ukufakwa kwekhabhoni ebonakalayo | Indawo eqongelelekayo ≤ 0.05% | Indawo eqongelelekayo ≤ 5% |
| Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu | Ubude obuhlanganisiwe ≤ ububanzi be-wafer obu-1 | |
| Ama-Edge Chips Ngokukhanya Okuphezulu | Akukho okuvunyelwe ububanzi nokujula okungu-≥ 0.2 mm | 7 kuvunyelwe, ≤ 1 mm ngayinye |
| Ukususwa Kwesikulufo Sokuchusha | < 500 cm³ | < 500 cm³ |
| Ukungcoliswa Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu | ||
| Ukupakisha | Ikhasethi Yesitsha Esinezitsha Eziningi Noma Isitsha Esinezitsha Ezinezitsha Ezimbili | Ikhasethi Yesitsha Esinezitsha Eziningi Noma Isitsha Esinezitsha Ezinezitsha Ezimbili |
Imininingwane ye-wafer ye-SiC engu-8 intshi engu-4H-N | ||
| Impahla | Ibanga Lokukhiqiza le-MPD Elingenalutho (Ibanga le-Z) | Ibanga Eliyimbumbulu (Ibanga D) |
| Ibanga | Ibanga Lokukhiqiza le-MPD Elingenalutho (Ibanga le-Z) | Ibanga Eliyimbumbulu (Ibanga D) |
| Ububanzi | 199.5 mm - 200.0 mm | 199.5 mm - 200.0 mm |
| Uhlobo lwe-Poly | 4H | 4H |
| Ubukhulu | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Ukuqondiswa kwe-Wafer | 4.0° ukuya ku-<110> ± 0.5° | 4.0° ukuya ku-<110> ± 0.5° |
| Ubuningi be-Micropipe | ≤ 0.2 cm² | ≤ 5 cm² |
| Ukumelana | 0.015 - 0.025 Ω·cm | 0.015 - 0.028 Ω·cm |
| Ukuqondiswa Okuhle | ||
| Ukukhishwa Komphetho | 3 mm | 3 mm |
| I-LTV/TIV / Umnsalo / I-Warp | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Ubulukhuni | I-Polish Ra ≤ 1 nm | I-Polish Ra ≤ 1 nm |
| I-CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Imifantu Yomphetho Ngokukhanya Okunamandla Okuphezulu | Ubude obuhlanganisiwe ≤ 20 mm ubude obubodwa ≤ 2 mm | Ubude obuhlanganisiwe ≤ 20 mm ubude obubodwa ≤ 2 mm |
| Amapuleti e-Hex Ngokukhanya Okuphezulu | Indawo eqongelelekayo ≤ 0.05% | Indawo ehlanganisiwe ≤ 0.1% |
| Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu | Indawo eqongelelekayo ≤ 0.05% | Indawo eqongelelekayo ≤ 3% |
| Ukufakwa kwekhabhoni ebonakalayo | Indawo eqongelelekayo ≤ 0.05% | Indawo eqongelelekayo ≤ 5% |
| Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu | Ubude obuhlanganisiwe ≤ ububanzi be-wafer obu-1 | |
| Ama-Edge Chips Ngokukhanya Okuphezulu | Akukho okuvunyelwe ububanzi nokujula okungu-≥ 0.2 mm | 7 kuvunyelwe, ≤ 1 mm ngayinye |
| Ukususwa Kwesikulufo Sokuchusha | < 500 cm³ | < 500 cm³ |
| Ukungcoliswa Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu | ||
| Ukupakisha | Ikhasethi Yesitsha Esinezitsha Eziningi Noma Isitsha Esinezitsha Ezinezitsha Ezimbili | Ikhasethi Yesitsha Esinezitsha Eziningi Noma Isitsha Esinezitsha Ezinezitsha Ezimbili |
I-4H-SiC iyinto esebenza kahle kakhulu esetshenziselwa ama-electronics anamandla, amadivayisi e-RF, kanye nezinhlelo zokusebenza ezisebenzisa izinga lokushisa eliphezulu. I-"4H" ibhekisela esakhiweni sekristalu, esinonxande, kanti i-"N" isho uhlobo lokusebenzisa izidakamizwa olusetshenziswa ukwenza ngcono ukusebenza kwezinto.
I4H-SiCuhlobo luvame ukusetshenziswa ku:
Amandla kagesi:Kusetshenziswa kumadivayisi afana nama-diode, ama-MOSFET, nama-IGBT ezinjini zikagesi, imishini yezimboni, kanye nezinhlelo zamandla avuselelekayo.
Ubuchwepheshe be-5G:Njengoba i-5G ifuna izingxenye ezisebenza kahle kakhulu nezinemvamisa ephezulu, ikhono le-SiC lokuphatha ama-voltage aphezulu nokusebenza emazingeni okushisa aphezulu lenza kube kuhle kakhulu kuma-amplifier kagesi asesiteshini esiyisisekelo kanye namadivayisi e-RF.
Izinhlelo Zamandla Elanga:Izakhiwo ezinhle kakhulu zokuphatha amandla ze-SiC zilungele ama-inverter nama-converter e-photovoltaic (amandla elanga).
Izimoto Zikagesi (ama-EV):I-SiC isetshenziswa kabanzi kuma-powertrain e-EV ukuze kuguqulwe amandla ngendlela ephumelela kakhudlwana, kukhiqizwe ukushisa okuphansi, kanye nobuningi bamandla obuphezulu.
Izakhiwo zohlobo lwe-SiC Substrate 4H Semi-Insulating kanye nokusetshenziswa kwalo
Izakhiwo:
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Amasu okulawula ubuningi obungenawo amapayipi amancane: Kuqinisekisa ukungabikho kwamapayipi amancane, kuthuthukisa ikhwalithi ye-substrate.
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Amasu okulawula i-monocrystalline: Iqinisekisa isakhiwo esisodwa sekristalu sezakhiwo zezinto ezithuthukisiwe.
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Amasu okulawula ukufakwa: Kunciphisa ukuba khona kokungcola noma izinto ezifakiwe, okuqinisekisa ukuthi i-substrate ihlanzekile.
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Amasu okulawula ukumelana: Ivumela ukulawulwa okunembile kokumelana kukagesi, okubalulekile ekusebenzeni kwedivayisi.
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Amasu okulawula nokulawula ukungcola: Ilawula futhi ikhawulele ukufakwa kokungcola ukuze kulondolozwe ubuqotho be-substrate.
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Amasu okulawula ububanzi besinyathelo se-substrate: Inikeza ukulawula okunembile kobubanzi besinyathelo, iqinisekisa ukuhambisana kuyo yonke i-substrate
Imininingwane ye-substrate engu-6Inch engu-4H-semi SiC | ||
| Impahla | Ibanga Lokukhiqiza le-MPD Elingenalutho (Ibanga le-Z) | Ibanga Eliyimbumbulu (Ibanga D) |
| Ububanzi (mm) | 145 mm - 150 mm | 145 mm - 150 mm |
| Uhlobo lwe-Poly | 4H | 4H |
| Ubukhulu (um) | 500 ± 15 | 500 ± 25 |
| Ukuqondiswa kwe-Wafer | Ku-axis: ±0.0001° | Ku-axis: ±0.05° |
| Ubuningi be-Micropipe | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Ukumelana (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Ukuqondiswa Okuyisisekelo Okuyisicaba | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Ubude Obuphansi Obuyinhloko | I-Notch | I-Notch |
| Ukukhishwa Komphetho (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| I-LTV / Isitsha / I-Warp | ≤ 3 µm | ≤ 3 µm |
| Ubulukhuni | I-Polish Ra ≤ 1.5 µm | I-Polish Ra ≤ 1.5 µm |
| Ama-Edge Chips Ngokukhanya Okuphezulu | ≤ 20 µm | ≤ 60 µm |
| Amapuleti Okushisa Ngokukhanya Okunamandla Okuphezulu | Okuhlanganisiwe ≤ 0.05% | Okuhlanganisiwe ≤ 3% |
| Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu | Ukufakwa kwekhabhoni ebonakalayo ≤ 0.05% | Okuhlanganisiwe ≤ 3% |
| Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu | ≤ 0.05% | Okuhlanganisiwe ≤ 4% |
| Ama-Edge Chips Ngokukhanya Okunamandla Okuphezulu (Usayizi) | Akuvunyelwe > 02 mm Ububanzi Nokujula | Akuvunyelwe > 02 mm Ububanzi Nokujula |
| Ukukhulisa Isikulufa Esisizayo | ≤ 500 µm | ≤ 500 µm |
| Ukungcoliswa Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Ukupakisha | Ikhasethi ye-Multi-wafer noma i-Single Wafer | Ikhasethi ye-Multi-wafer noma i-Single Wafer |
Ukucaciswa kwe-Substrate ye-SiC engu-4-Inch engu-4H-Semi Insulating
| Ipharamitha | Ibanga Lokukhiqiza le-MPD Elingenalutho (Ibanga le-Z) | Ibanga Eliyimbumbulu (Ibanga D) |
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| Izakhiwo Ezibonakalayo | ||
| Ububanzi | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Uhlobo lwe-Poly | 4H | 4H |
| Ubukhulu | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Ukuqondiswa kwe-Wafer | Ku-axis: <600h > 0.5° | Ku-axis: <000h > 0.5° |
| Izakhiwo Zikagesi | ||
| Ubuningi be-Micropipe (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Ukumelana | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Ukubekezelelana kweJomethri | ||
| Ukuqondiswa Okuyisisekelo Okuyisicaba | (0x10) ± 5.0° | (0x10) ± 5.0° |
| Ubude Obuphansi Obuyinhloko | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Ubude Besibili Obuyisicaba | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Ukuqondiswa Kwesibili Okuyisicaba | 90° CW kusuka ku-Prime flat ± 5.0° (Si ibheke phezulu) | 90° CW kusuka ku-Prime flat ± 5.0° (Si ibheke phezulu) |
| Ukukhishwa Komphetho | 3 mm | 3 mm |
| I-LTV / I-TTV / Umnsalo / I-Warp | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Ikhwalithi Yomphezulu | ||
| Ubulukhuni Bomphezulu (i-Polish Ra) | ≤1 nm | ≤1 nm |
| Ubulukhuni Bomphezulu (i-CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Imifantu Yomphetho (Ukukhanya Okunamandla Aphezulu) | Akuvunyelwe | Ubude obuhlanganisiwe ≥10 mm, ukuqhekeka okukodwa ≤2 mm |
| Amaphutha epuleti elinezinhlangothi eziyisithupha | Indawo ehlanganisiwe engu-≤0.05% | Indawo ehlanganisiwe engu-≤0.1% |
| Izindawo Zokufaka Ama-Polytype | Akuvunyelwe | ≤1% indawo eqongelelekayo |
| Ukufakwa kwekhabhoni ebonakalayo | Indawo ehlanganisiwe engu-≤0.05% | ≤1% indawo eqongelelekayo |
| Ukuklwebheka Okungaphezulu Kwe-Silicon | Akuvunyelwe | ≤1 ububanzi be-wafer ubude obuhlanganisiwe |
| Ama-Edge Chips | Akukho okuvunyelwe (≥0.2 mm ububanzi/ukujula) | ≤5 ama-chips (ngalinye ≤1 mm) |
| Ukungcoliswa Komphezulu We-Silicon | Akucacisiwe | Akucacisiwe |
| Ukupakisha | ||
| Ukupakisha | Ikhasethi ye-multi-wafer noma isitsha se-single-wafer | Ikhasethi ye-multi-wafer noma |
Isicelo:
IIzisekelo ze-SiC 4H ezivikela kancanezisetshenziswa kakhulu kumadivayisi kagesi anamandla aphezulu kanye nama-frequency aphezulu, ikakhulukazi ku-Inkambu ye-RFLezi zingxenye zibalulekile ekusetshenzisweni okuhlukahlukene okuhlanganisaizinhlelo zokuxhumana ze-microwave, i-radar ye-array ehlukaniswe ngezigaba, futhiizitholi zikagesi ezingenantambo. Ukushisa kwazo okuphezulu kanye nezici zikagesi ezinhle kakhulu kuzenza zilungele ukusetshenziswa okudingakalayo ezinhlelweni zikagesi zamandla kanye nezokuxhumana.
Izakhiwo zohlobo lwe-SiC epi wafer 4H-N kanye nokusetshenziswa
Izakhiwo kanye Nezicelo ze-SiC 4H-N Type Epi Wafer
Izakhiwo ze-SiC 4H-N Type Epi Wafer:
Ukwakheka Kwezinto:
I-SiC (i-Silicon Carbide): Yaziwa ngobulukhuni bayo obuvelele, ukuhanjiswa kokushisa okuphezulu, kanye nezakhiwo zikagesi ezinhle kakhulu, i-SiC ilungele amadivayisi kagesi asebenza kahle kakhulu.
Uhlobo lwe-polytype lwe-4H-SiC: I-polytype ye-4H-SiC yaziwa ngokusebenza kwayo okuphezulu kanye nokuzinza ekusetshenzisweni kwe-elekthronikhi.
Ukushintshashintsha kohlobo lwe-N: Ukufakwa kwe-doping yohlobo lwe-N (okufakwe i-nitrogen) kunikeza ukuhamba kahle kwama-electron, okwenza i-SiC ifanele ukusetshenziswa kwemvamisa ephezulu kanye namandla aphezulu.
Ukushisa Okuphezulu:
Ama-wafer e-SiC anokushisa okuphezulu, ngokuvamile asukela ku-120–200 W/m·K, okubavumela ukuthi baphathe ukushisa ngempumelelo kumadivayisi anamandla amakhulu njenge-transistors nama-diode.
Igebe Elibanzi:
Ngesikhala se-bandgap3.26 eV, i-4H-SiC ingasebenza ngama-voltage aphezulu, amaza, kanye namazinga okushisa uma kuqhathaniswa namadivayisi avamile asekelwe ku-silicon, okwenza kube kuhle kakhulu ezinhlelweni zokusebenza ezisebenza kahle kakhulu neziphezulu.
Izakhiwo Zikagesi:
Ukuhamba okuphezulu kwama-electron kanye nokuqhuba kwe-SiC kwenza kube kuhle kakhuluugesi kagesi, enikeza isivinini sokushintsha okusheshayo kanye nomthamo wokuphatha wamanje kanye ne-voltage ephezulu, okuholela ezinhlelweni zokuphatha amandla ezisebenza kahle kakhulu.
Ukumelana Nemishini Namakhemikhali:
I-SiC ingenye yezinto eziqinile kakhulu, ilandela idayimane kuphela, futhi imelana kakhulu ne-oxidation kanye nokugqwala, okwenza ihlale isikhathi eside ezindaweni ezinzima.
Ukusetshenziswa kwe-SiC 4H-N Type Epi Wafer:
Amandla kagesi:
Ama-wafer e-epi wohlobo lwe-SiC 4H-N asetshenziswa kabanzi e-amandla e-MOSFET, Ama-IGBT, futhiama-diodengobaukuguqulwa kwamandlaezinhlelweni ezifanaama-inverter elanga, izimoto zikagesi, futhiizinhlelo zokugcina amandla, okunikeza ukusebenza okuthuthukisiwe kanye nokusebenza kahle kwamandla.
Izimoto Zikagesi (ama-EV):
In izitimela zamandla zezimoto zikagesi, izilawuli zezimoto, futhiiziteshi zokushaja, ama-SiC wafer asiza ekufezeni ukusebenza kahle kwebhethri, ukushaja okusheshayo, kanye nokusebenza kahle kwamandla okuphelele ngenxa yekhono lawo lokuphatha amandla aphezulu kanye namazinga okushisa.
Izinhlelo Zamandla Avuselelekayo:
Ama-Inverter ElangaAma-wafer e-SiC asetshenziswa ku-izinhlelo zamandla elangaukuguqula amandla e-DC kusuka kumaphaneli elanga abe yi-AC, okwandisa ukusebenza kahle kwesistimu kanye nokusebenza kwayo yonke.
Ama-Wind TurbineUbuchwepheshe be-SiC busetshenziswa kuizinhlelo zokulawula i-turbine yomoya, ukuthuthukisa ukukhiqizwa kwamandla kanye nokusebenza kahle kokuguqulwa.
Izindiza kanye Nokuvikela:
Ama-wafer e-SiC alungele ukusetshenziswa ku-izinto zikagesi zezindizafuthiizicelo zempi, kufaka phakathiizinhlelo ze-radarfuthiizinto zikagesi zesathelayithi, lapho ukumelana nemisebe ephezulu kanye nokuqina kokushisa kubalulekile khona.
Izicelo Zokushisa Okuphezulu kanye Nemvamisa Ephakeme:
Ama-wafer e-SiC asebenza kahle kakhuluizinto zikagesi ezishisa kakhulu, esetshenziswa kuizinjini zezindiza, izindiza-mkhathi, futhiizinhlelo zokushisa zezimboni, njengoba zigcina ukusebenza kahle ezimweni zokushisa okukhulu. Ngaphezu kwalokho, igebe lazo elibanzi livumela ukusetshenziswa kuizinhlelo zokusebenza ezivame kakhulunjengeAmadivayisi e-RFfuthiukuxhumana kwe-microwave.
| Imininingwane ye-epit axial engu-6-intshi N-type | |||
| Ipharamitha | iyunithi | I-Z-MOS | |
| Uhlobo | Ukuguquguquka / i-Dopant | - | Uhlobo lwe-N / i-nitrogen |
| Isendlalelo se-Buffer | Ubukhulu Besendlalelo Sebhafa | um | 1 |
| Ukubekezelela Ubukhulu Besendlalelo Sebhafa | % | ±20% | |
| Ukugxila Kwesendlalelo Sebhafa | cm-3 | 1.00E+18 | |
| Ukubekezelela Ukuhlushwa Kwezingqimba Zebhafa | % | ±20% | |
| Isendlalelo se-Epi soku-1 | Ubukhulu Besendlalelo Se-Epi | um | 11.5 |
| Ukufana Kokujiya Kwesendlalelo Se-Epi | % | ±4% | |
| Ukubekezelelana Kobukhulu Bezingqimba ze-Epi ((Okucacisiwe-) Ubuningi ，Obuncane)/Imininingwane) | % | ±5% | |
| Ukugxila Kwezingqimba Ze-Epi | cm-3 | 1E 15~ 1E 18 | |
| Ukubekezelelana Kokuhlushwa Kwezingqimba Ze-Epi | % | 6% | |
| Ukufana Kokuhlushwa Kwezingqimba Ze-Epi (σ /aphakathi) | % | ≤5% | |
| Ukufana Kokugxilisa Isendlalelo Se-Epi <(ubuningi-min)/(ubuningi+min> | % | ≤ 10% | |
| Isimo se-Epitaixal Wafer | Umnsalo | um | ≤±20 |
| I-WARP | um | ≤30 | |
| I-TTV | um | ≤ 10 | |
| I-LTV | um | ≤2 | |
| Izici Ezijwayelekile | Ubude bokuklwebheka | mm | ≤30mm |
| Ama-Edge Chips | - | AKUKHO | |
| Incazelo yamaphutha | ≥97% （Kulinganiswe ngo-2*2， Amaphutha okubulala afaka: Amaphutha afaka phakathi Ipayipi elincane/Imigodi emikhulu, Ikaroti, Unxantathu | ||
| Ukungcola kwensimbi | ama-athomu/cm² | d f f ll i ≤5E10 ama-athomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca&Mn) | |
| Iphakheji | Imininingwane yokupakisha | ama-pcs/ibhokisi | ikhasethi ye-wafer enezicucu eziningi noma isitsha se-wafer esisodwa |
| Imininingwane ye-epitaxial yohlobo lwe-N engu-8 intshi | |||
| Ipharamitha | iyunithi | I-Z-MOS | |
| Uhlobo | Ukuguquguquka / i-Dopant | - | Uhlobo lwe-N / i-nitrogen |
| Isendlalelo se-buffer | Ubukhulu Besendlalelo Sebhafa | um | 1 |
| Ukubekezelela Ubukhulu Besendlalelo Sebhafa | % | ±20% | |
| Ukugxila Kwesendlalelo Sebhafa | cm-3 | 1.00E+18 | |
| Ukubekezelela Ukuhlushwa Kwezingqimba Zebhafa | % | ±20% | |
| Isendlalelo se-Epi soku-1 | Isilinganiso Sokujiya Kwezingqimba Ze-Epi | um | 8 ~ 12 |
| Ubukhulu Bezingqimba ze-Epi Ukufana (σ/isilinganiso) | % | ≤2.0 | |
| Ukubekezelelana Kobukhulu Bezingqimba ze-Epi ((Ukucaciswa -Ubuningi, Obuncane)/Ukucaciswa) | % | ±6 | |
| I-Epi Layers Net Isilinganiso Sokuphuzwa Kwemithi | cm-3 | 8E+15 ~2E+16 | |
| Izendlalelo ze-Epi Ukufana kwe-Net Doping (σ/isilinganiso) | % | ≤5 | |
| Izingqimba ze-Epi Ukubekezelelana Okune-Net Doping((Spec -Max， | % | ± 10.0 | |
| Isimo se-Epitaixal Wafer | I-Mi )/S ) I-Warp | um | ≤50.0 |
| Umnsalo | um | ± 30.0 | |
| I-TTV | um | ≤ 10.0 | |
| I-LTV | um | ≤4.0 (10mm×10mm) | |
| Jikelele Izici | Ukuklwebheka | - | Ubude obuhlanganisiwe ≤ 1/2 ububanzi be-Wafer |
| Ama-Edge Chips | - | ≤2 ama-chips, Irediyasi ngayinye ≤1.5mm | |
| Ukungcola Kwezinsimbi Ezingaphezulu | ama-athomu/cm2 | ≤5E10 ama-athomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca&Mn) | |
| Ukuhlolwa Okuphelele Kweziphambeko | % | ≥ 96.0 (Iziphambeko ze-2X2 zifaka phakathi i-Micropipe / imigodi emikhulu, Izaqathi, Amaphutha angunxantathu, Ukuwa, I-Linear/IGSF-s, i-BPD) | |
| Ukungcola Kwezinsimbi Ezingaphezulu | ama-athomu/cm2 | ≤5E10 ama-athomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca&Mn) | |
| Iphakheji | Imininingwane yokupakisha | - | ikhasethi ye-wafer enezicucu eziningi noma isitsha se-wafer esisodwa |
Imibuzo Nezimpendulo ze-SiC wafer
Umbuzo 1: Yiziphi izinzuzo ezibalulekile zokusebenzisa ama-wafer e-SiC kune-wafer ye-silicon yendabuko kuma-electronics anamandla?
A1:
Ama-wafer e-SiC anikeza izinzuzo eziningana ezibalulekile ngaphezu kwama-wafer e-silicon (Si) endabuko kuma-electronics anamandla, okuhlanganisa:
Ukusebenza Kahle Okuphezulu: I-SiC inesikhala esikhulu (3.26 eV) uma iqhathaniswa ne-silicon (1.1 eV), okuvumela amadivayisi ukuthi asebenze ngama-voltage aphezulu, amaza, kanye namazinga okushisa. Lokhu kuholela ekulahlekelweni kwamandla okuphansi kanye nokusebenza kahle okuphezulu ezinhlelweni zokuguqulwa kwamandla.
Ukushisa Okuphezulu Kokushisa: Ukushisa kwe-SiC kuphakeme kakhulu kunokwe-silicon, okuvumela ukushabalaliswa kokushisa okungcono kuzinhlelo zokusebenza zamandla aphezulu, okuthuthukisa ukuthembeka kanye nokuphila kwesikhathi kwamadivayisi kagesi.
Ukuphathwa Kwe-Voltage Ephakeme Nokwamanje: Amadivayisi e-SiC angaphatha amazinga aphezulu kagesi kanye namazinga wamanje, okwenza afaneleke ukusetshenziswa kwamandla aphezulu njengezimoto zikagesi, izinhlelo zamandla avuselelekayo, kanye nama-drive ezimoto zezimboni.
Isivinini Sokushintsha Esisheshayo: Amadivayisi e-SiC anamakhono okushintsha ngokushesha, anegalelo ekunciphiseni ukulahleka kwamandla kanye nosayizi wesistimu, okwenza abe afanele ukusetshenziswa kwemvamisa ephezulu.
Umbuzo 2: Yiziphi izinhlelo zokusebenza eziyinhloko zama-wafer e-SiC embonini yezimoto?
A2:
Embonini yezimoto, ama-wafer e-SiC asetshenziswa kakhulu ku:
Izitimela zamandla zezimoto zikagesi (i-EV): Izingxenye ezisekelwe ku-SiC ezifanaama-inverterfuthiamandla e-MOSFETukuthuthukisa ukusebenza kahle kanye nokusebenza kwezimoto zikagesi ngokuvumela isivinini sokushintsha esisheshayo kanye nobuningi bamandla aphezulu. Lokhu kuholela empilweni yebhethri ende kanye nokusebenza okungcono kwemoto iyonke.
Amashaja asebhodini: Amadivayisi e-SiC asiza ekuthuthukiseni ukusebenza kahle kwezinhlelo zokushaja ngaphakathi kwebhodi ngokunika amandla izikhathi zokushaja ezisheshayo kanye nokuphathwa okungcono kokushisa, okubaluleke kakhulu kuma-EV ukusekela iziteshi zokushaja ezinamandla aphezulu.
Izinhlelo Zokuphatha Ibhethri (i-BMS)Ubuchwepheshe be-SiC buthuthukisa ukusebenza kahle kweizinhlelo zokuphatha ibhethri, okuvumela ukulawulwa okungcono kwamandla kagesi, ukuphathwa kwamandla okuphezulu, kanye nokuphila isikhathi eside kwebhethri.
Abaguquli be-DC-DCAma-wafer e-SiC asetshenziswa ku-Abaguquli be-DC-DCukuguqula amandla e-DC ane-voltage ephezulu abe amandla e-DC ane-voltage ephansi ngendlela ephumelelayo, okuyinto ebalulekile ezimotweni zikagesi ukuphatha amandla kusukela ebhethrini kuya ezingxenyeni ezahlukene emotweni.
Ukusebenza okuphezulu kwe-SiC ekusetshenzisweni kwamandla kagesi aphezulu, izinga lokushisa eliphezulu, kanye nokusebenza kahle kakhulu kwenza kube yinto ebalulekile ekushintsheni kwemboni yezimoto ekushintsheni kukagesi.
Imininingwane ye-SiC wafer yohlobo lwe-6 intshi engu-4H-N | ||
| Impahla | Ibanga Lokukhiqiza le-MPD Elingenalutho (Ibanga le-Z) | Ibanga Eliyimbumbulu (Ibanga D) |
| Ibanga | Ibanga Lokukhiqiza le-MPD Elingenalutho (Ibanga le-Z) | Ibanga Eliyimbumbulu (Ibanga D) |
| Ububanzi | 149.5 mm – 150.0 mm | 149.5 mm – 150.0 mm |
| Uhlobo lwe-Poly | 4H | 4H |
| Ubukhulu | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Ukuqondiswa kwe-Wafer | I-axis evaliwe: 4.0° ibheke ku-<1120> ± 0.5° | I-axis evaliwe: 4.0° ibheke ku-<1120> ± 0.5° |
| Ubuningi be-Micropipe | ≤ 0.2 cm² | ≤ 15 cm² |
| Ukumelana | 0.015 – 0.024 Ω·cm | 0.015 – 0.028 Ω·cm |
| Ukuqondiswa Okuyisisekelo Okuyisicaba | [10-10] ± 50° | [10-10] ± 50° |
| Ubude Obuphansi Obuyinhloko | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Ukukhishwa Komphetho | 3 mm | 3 mm |
| I-LTV/TIV / Umnsalo / I-Warp | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Ubulukhuni | I-Polish Ra ≤ 1 nm | I-Polish Ra ≤ 1 nm |
| I-CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Imifantu Yomphetho Ngokukhanya Okunamandla Okuphezulu | Ubude obuhlanganisiwe ≤ 20 mm ubude obubodwa ≤ 2 mm | Ubude obuhlanganisiwe ≤ 20 mm ubude obubodwa ≤ 2 mm |
| Amapuleti e-Hex Ngokukhanya Okuphezulu | Indawo eqongelelekayo ≤ 0.05% | Indawo ehlanganisiwe ≤ 0.1% |
| Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu | Indawo eqongelelekayo ≤ 0.05% | Indawo eqongelelekayo ≤ 3% |
| Ukufakwa kwekhabhoni ebonakalayo | Indawo eqongelelekayo ≤ 0.05% | Indawo eqongelelekayo ≤ 5% |
| Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu | Ubude obuhlanganisiwe ≤ ububanzi be-wafer obu-1 | |
| Ama-Edge Chips Ngokukhanya Okuphezulu | Akukho okuvunyelwe ububanzi nokujula okungu-≥ 0.2 mm | 7 kuvunyelwe, ≤ 1 mm ngayinye |
| Ukususwa Kwesikulufo Sokuchusha | < 500 cm³ | < 500 cm³ |
| Ukungcoliswa Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu | ||
| Ukupakisha | Ikhasethi Yesitsha Esinezitsha Eziningi Noma Isitsha Esinezitsha Ezinezitsha Ezimbili | Ikhasethi Yesitsha Esinezitsha Eziningi Noma Isitsha Esinezitsha Ezinezitsha Ezimbili |
Imininingwane ye-wafer ye-SiC engu-8 intshi engu-4H-N | ||
| Impahla | Ibanga Lokukhiqiza le-MPD Elingenalutho (Ibanga le-Z) | Ibanga Eliyimbumbulu (Ibanga D) |
| Ibanga | Ibanga Lokukhiqiza le-MPD Elingenalutho (Ibanga le-Z) | Ibanga Eliyimbumbulu (Ibanga D) |
| Ububanzi | 199.5 mm – 200.0 mm | 199.5 mm – 200.0 mm |
| Uhlobo lwe-Poly | 4H | 4H |
| Ubukhulu | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Ukuqondiswa kwe-Wafer | 4.0° ukuya ku-<110> ± 0.5° | 4.0° ukuya ku-<110> ± 0.5° |
| Ubuningi be-Micropipe | ≤ 0.2 cm² | ≤ 5 cm² |
| Ukumelana | 0.015 – 0.025 Ω·cm | 0.015 – 0.028 Ω·cm |
| Ukuqondiswa Okuhle | ||
| Ukukhishwa Komphetho | 3 mm | 3 mm |
| I-LTV/TIV / Umnsalo / I-Warp | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Ubulukhuni | I-Polish Ra ≤ 1 nm | I-Polish Ra ≤ 1 nm |
| I-CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Imifantu Yomphetho Ngokukhanya Okunamandla Okuphezulu | Ubude obuhlanganisiwe ≤ 20 mm ubude obubodwa ≤ 2 mm | Ubude obuhlanganisiwe ≤ 20 mm ubude obubodwa ≤ 2 mm |
| Amapuleti e-Hex Ngokukhanya Okuphezulu | Indawo eqongelelekayo ≤ 0.05% | Indawo ehlanganisiwe ≤ 0.1% |
| Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu | Indawo eqongelelekayo ≤ 0.05% | Indawo eqongelelekayo ≤ 3% |
| Ukufakwa kwekhabhoni ebonakalayo | Indawo eqongelelekayo ≤ 0.05% | Indawo eqongelelekayo ≤ 5% |
| Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu | Ubude obuhlanganisiwe ≤ ububanzi be-wafer obu-1 | |
| Ama-Edge Chips Ngokukhanya Okuphezulu | Akukho okuvunyelwe ububanzi nokujula okungu-≥ 0.2 mm | 7 kuvunyelwe, ≤ 1 mm ngayinye |
| Ukususwa Kwesikulufo Sokuchusha | < 500 cm³ | < 500 cm³ |
| Ukungcoliswa Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu | ||
| Ukupakisha | Ikhasethi Yesitsha Esinezitsha Eziningi Noma Isitsha Esinezitsha Ezinezitsha Ezimbili | Ikhasethi Yesitsha Esinezitsha Eziningi Noma Isitsha Esinezitsha Ezinezitsha Ezimbili |
Imininingwane ye-substrate engu-6Inch engu-4H-semi SiC | ||
| Impahla | Ibanga Lokukhiqiza le-MPD Elingenalutho (Ibanga le-Z) | Ibanga Eliyimbumbulu (Ibanga D) |
| Ububanzi (mm) | 145 mm – 150 mm | 145 mm – 150 mm |
| Uhlobo lwe-Poly | 4H | 4H |
| Ubukhulu (um) | 500 ± 15 | 500 ± 25 |
| Ukuqondiswa kwe-Wafer | Ku-axis: ±0.0001° | Ku-axis: ±0.05° |
| Ubuningi be-Micropipe | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Ukumelana (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Ukuqondiswa Okuyisisekelo Okuyisicaba | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Ubude Obuphansi Obuyinhloko | I-Notch | I-Notch |
| Ukukhishwa Komphetho (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| I-LTV / Isitsha / I-Warp | ≤ 3 µm | ≤ 3 µm |
| Ubulukhuni | I-Polish Ra ≤ 1.5 µm | I-Polish Ra ≤ 1.5 µm |
| Ama-Edge Chips Ngokukhanya Okuphezulu | ≤ 20 µm | ≤ 60 µm |
| Amapuleti Okushisa Ngokukhanya Okunamandla Okuphezulu | Okuhlanganisiwe ≤ 0.05% | Okuhlanganisiwe ≤ 3% |
| Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu | Ukufakwa kwekhabhoni ebonakalayo ≤ 0.05% | Okuhlanganisiwe ≤ 3% |
| Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu | ≤ 0.05% | Okuhlanganisiwe ≤ 4% |
| Ama-Edge Chips Ngokukhanya Okunamandla Okuphezulu (Usayizi) | Akuvunyelwe > 02 mm Ububanzi Nokujula | Akuvunyelwe > 02 mm Ububanzi Nokujula |
| Ukukhulisa Isikulufa Esisizayo | ≤ 500 µm | ≤ 500 µm |
| Ukungcoliswa Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Ukupakisha | Ikhasethi ye-Multi-wafer noma i-Single Wafer | Ikhasethi ye-Multi-wafer noma i-Single Wafer |
Ukucaciswa kwe-Substrate ye-SiC engu-4-Inch engu-4H-Semi Insulating
| Ipharamitha | Ibanga Lokukhiqiza le-MPD Elingenalutho (Ibanga le-Z) | Ibanga Eliyimbumbulu (Ibanga D) |
|---|---|---|
| Izakhiwo Ezibonakalayo | ||
| Ububanzi | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Uhlobo lwe-Poly | 4H | 4H |
| Ubukhulu | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Ukuqondiswa kwe-Wafer | Ku-axis: <600h > 0.5° | Ku-axis: <000h > 0.5° |
| Izakhiwo Zikagesi | ||
| Ubuningi be-Micropipe (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Ukumelana | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Ukubekezelelana kweJomethri | ||
| Ukuqondiswa Okuyisisekelo Okuyisicaba | (0×10) ± 5.0° | (0×10) ± 5.0° |
| Ubude Obuphansi Obuyinhloko | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Ubude Besibili Obuyisicaba | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Ukuqondiswa Kwesibili Okuyisicaba | 90° CW kusuka ku-Prime flat ± 5.0° (Si ibheke phezulu) | 90° CW kusuka ku-Prime flat ± 5.0° (Si ibheke phezulu) |
| Ukukhishwa Komphetho | 3 mm | 3 mm |
| I-LTV / I-TTV / Umnsalo / I-Warp | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Ikhwalithi Yomphezulu | ||
| Ubulukhuni Bomphezulu (i-Polish Ra) | ≤1 nm | ≤1 nm |
| Ubulukhuni Bomphezulu (i-CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Imifantu Yomphetho (Ukukhanya Okunamandla Aphezulu) | Akuvunyelwe | Ubude obuhlanganisiwe ≥10 mm, ukuqhekeka okukodwa ≤2 mm |
| Amaphutha epuleti elinezinhlangothi eziyisithupha | Indawo ehlanganisiwe engu-≤0.05% | Indawo ehlanganisiwe engu-≤0.1% |
| Izindawo Zokufaka Ama-Polytype | Akuvunyelwe | ≤1% indawo eqongelelekayo |
| Ukufakwa kwekhabhoni ebonakalayo | Indawo ehlanganisiwe engu-≤0.05% | ≤1% indawo eqongelelekayo |
| Ukuklwebheka Okungaphezulu Kwe-Silicon | Akuvunyelwe | ≤1 ububanzi be-wafer ubude obuhlanganisiwe |
| Ama-Edge Chips | Akukho okuvunyelwe (≥0.2 mm ububanzi/ukujula) | ≤5 ama-chips (ngalinye ≤1 mm) |
| Ukungcoliswa Komphezulu We-Silicon | Akucacisiwe | Akucacisiwe |
| Ukupakisha | ||
| Ukupakisha | Ikhasethi ye-multi-wafer noma isitsha se-single-wafer | Ikhasethi ye-multi-wafer noma |
| Imininingwane ye-epit axial engu-6-intshi N-type | |||
| Ipharamitha | iyunithi | I-Z-MOS | |
| Uhlobo | Ukuguquguquka / i-Dopant | - | Uhlobo lwe-N / i-nitrogen |
| Isendlalelo se-Buffer | Ubukhulu Besendlalelo Sebhafa | um | 1 |
| Ukubekezelela Ubukhulu Besendlalelo Sebhafa | % | ±20% | |
| Ukugxila Kwesendlalelo Sebhafa | cm-3 | 1.00E+18 | |
| Ukubekezelela Ukuhlushwa Kwezingqimba Zebhafa | % | ±20% | |
| Isendlalelo se-Epi soku-1 | Ubukhulu Besendlalelo Se-Epi | um | 11.5 |
| Ukufana Kokujiya Kwesendlalelo Se-Epi | % | ±4% | |
| Ukubekezelelana Kobukhulu Bezingqimba ze-Epi ((Okucacisiwe-) Ubuningi ，Obuncane)/Imininingwane) | % | ±5% | |
| Ukugxila Kwezingqimba Ze-Epi | cm-3 | 1E 15~ 1E 18 | |
| Ukubekezelelana Kokuhlushwa Kwezingqimba Ze-Epi | % | 6% | |
| Ukufana Kokuhlushwa Kwezingqimba Ze-Epi (σ /aphakathi) | % | ≤5% | |
| Ukufana Kokugxilisa Isendlalelo Se-Epi <(ubuningi-min)/(ubuningi+min> | % | ≤ 10% | |
| Isimo se-Epitaixal Wafer | Umnsalo | um | ≤±20 |
| I-WARP | um | ≤30 | |
| I-TTV | um | ≤ 10 | |
| I-LTV | um | ≤2 | |
| Izici Ezijwayelekile | Ubude bokuklwebheka | mm | ≤30mm |
| Ama-Edge Chips | - | AKUKHO | |
| Incazelo yamaphutha | ≥97% （Kulinganiswe ngo-2*2， Amaphutha okubulala afaka: Amaphutha afaka phakathi Ipayipi elincane/Imigodi emikhulu, Ikaroti, Unxantathu | ||
| Ukungcola kwensimbi | ama-athomu/cm² | d f f ll i ≤5E10 ama-athomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca&Mn) | |
| Iphakheji | Imininingwane yokupakisha | ama-pcs/ibhokisi | ikhasethi ye-wafer enezicucu eziningi noma isitsha se-wafer esisodwa |
| Imininingwane ye-epitaxial yohlobo lwe-N engu-8 intshi | |||
| Ipharamitha | iyunithi | I-Z-MOS | |
| Uhlobo | Ukuguquguquka / i-Dopant | - | Uhlobo lwe-N / i-nitrogen |
| Isendlalelo se-buffer | Ubukhulu Besendlalelo Sebhafa | um | 1 |
| Ukubekezelela Ubukhulu Besendlalelo Sebhafa | % | ±20% | |
| Ukugxila Kwesendlalelo Sebhafa | cm-3 | 1.00E+18 | |
| Ukubekezelela Ukuhlushwa Kwezingqimba Zebhafa | % | ±20% | |
| Isendlalelo se-Epi soku-1 | Isilinganiso Sokujiya Kwezingqimba Ze-Epi | um | 8 ~ 12 |
| Ubukhulu Bezingqimba ze-Epi Ukufana (σ/isilinganiso) | % | ≤2.0 | |
| Ukubekezelelana Kobukhulu Bezingqimba ze-Epi ((Ukucaciswa -Ubuningi, Obuncane)/Ukucaciswa) | % | ±6 | |
| I-Epi Layers Net Isilinganiso Sokuphuzwa Kwemithi | cm-3 | 8E+15 ~2E+16 | |
| Izendlalelo ze-Epi Ukufana kwe-Net Doping (σ/isilinganiso) | % | ≤5 | |
| Izingqimba ze-Epi Ukubekezelelana Okune-Net Doping((Spec -Max， | % | ± 10.0 | |
| Isimo se-Epitaixal Wafer | I-Mi )/S ) I-Warp | um | ≤50.0 |
| Umnsalo | um | ± 30.0 | |
| I-TTV | um | ≤ 10.0 | |
| I-LTV | um | ≤4.0 (10mm×10mm) | |
| Jikelele Izici | Ukuklwebheka | - | Ubude obuhlanganisiwe ≤ 1/2 ububanzi be-Wafer |
| Ama-Edge Chips | - | ≤2 ama-chips, Irediyasi ngayinye ≤1.5mm | |
| Ukungcola Kwezinsimbi Ezingaphezulu | ama-athomu/cm2 | ≤5E10 ama-athomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca&Mn) | |
| Ukuhlolwa Okuphelele Kweziphambeko | % | ≥ 96.0 (Iziphambeko ze-2X2 zifaka phakathi i-Micropipe / imigodi emikhulu, Izaqathi, Amaphutha angunxantathu, Ukuwa, I-Linear/IGSF-s, i-BPD) | |
| Ukungcola Kwezinsimbi Ezingaphezulu | ama-athomu/cm2 | ≤5E10 ama-athomu/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca&Mn) | |
| Iphakheji | Imininingwane yokupakisha | - | ikhasethi ye-wafer enezicucu eziningi noma isitsha se-wafer esisodwa |
Umbuzo 1: Yiziphi izinzuzo ezibalulekile zokusebenzisa ama-wafer e-SiC kune-wafer ye-silicon yendabuko kuma-electronics anamandla?
A1:
Ama-wafer e-SiC anikeza izinzuzo eziningana ezibalulekile ngaphezu kwama-wafer e-silicon (Si) endabuko kuma-electronics anamandla, okuhlanganisa:
Ukusebenza Kahle Okuphezulu: I-SiC inesikhala esikhulu (3.26 eV) uma iqhathaniswa ne-silicon (1.1 eV), okuvumela amadivayisi ukuthi asebenze ngama-voltage aphezulu, amaza, kanye namazinga okushisa. Lokhu kuholela ekulahlekelweni kwamandla okuphansi kanye nokusebenza kahle okuphezulu ezinhlelweni zokuguqulwa kwamandla.
Ukushisa Okuphezulu Kokushisa: Ukushisa kwe-SiC kuphakeme kakhulu kunokwe-silicon, okuvumela ukushabalaliswa kokushisa okungcono kuzinhlelo zokusebenza zamandla aphezulu, okuthuthukisa ukuthembeka kanye nokuphila kwesikhathi kwamadivayisi kagesi.
Ukuphathwa Kwe-Voltage Ephakeme Nokwamanje: Amadivayisi e-SiC angaphatha amazinga aphezulu kagesi kanye namazinga wamanje, okwenza afaneleke ukusetshenziswa kwamandla aphezulu njengezimoto zikagesi, izinhlelo zamandla avuselelekayo, kanye nama-drive ezimoto zezimboni.
Isivinini Sokushintsha Esisheshayo: Amadivayisi e-SiC anamakhono okushintsha ngokushesha, anegalelo ekunciphiseni ukulahleka kwamandla kanye nosayizi wesistimu, okwenza abe afanele ukusetshenziswa kwemvamisa ephezulu.
Umbuzo 2: Yiziphi izinhlelo zokusebenza eziyinhloko zama-wafer e-SiC embonini yezimoto?
A2:
Embonini yezimoto, ama-wafer e-SiC asetshenziswa kakhulu ku:
Izitimela zamandla zezimoto zikagesi (i-EV): Izingxenye ezisekelwe ku-SiC ezifanaama-inverterfuthiamandla e-MOSFETukuthuthukisa ukusebenza kahle kanye nokusebenza kwezimoto zikagesi ngokuvumela isivinini sokushintsha esisheshayo kanye nobuningi bamandla aphezulu. Lokhu kuholela empilweni yebhethri ende kanye nokusebenza okungcono kwemoto iyonke.
Amashaja asebhodini: Amadivayisi e-SiC asiza ekuthuthukiseni ukusebenza kahle kwezinhlelo zokushaja ngaphakathi kwebhodi ngokunika amandla izikhathi zokushaja ezisheshayo kanye nokuphathwa okungcono kokushisa, okubaluleke kakhulu kuma-EV ukusekela iziteshi zokushaja ezinamandla aphezulu.
Izinhlelo Zokuphatha Ibhethri (i-BMS)Ubuchwepheshe be-SiC buthuthukisa ukusebenza kahle kweizinhlelo zokuphatha ibhethri, okuvumela ukulawulwa okungcono kwamandla kagesi, ukuphathwa kwamandla okuphezulu, kanye nokuphila isikhathi eside kwebhethri.
Abaguquli be-DC-DCAma-wafer e-SiC asetshenziswa ku-Abaguquli be-DC-DCukuguqula amandla e-DC ane-voltage ephezulu abe amandla e-DC ane-voltage ephansi ngendlela ephumelelayo, okuyinto ebalulekile ezimotweni zikagesi ukuphatha amandla kusukela ebhethrini kuya ezingxenyeni ezahlukene emotweni.
Ukusebenza okuphezulu kwe-SiC ekusetshenzisweni kwamandla kagesi aphezulu, izinga lokushisa eliphezulu, kanye nokusebenza kahle kakhulu kwenza kube yinto ebalulekile ekushintsheni kwemboni yezimoto ekushintsheni kukagesi.
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