4H-N/6H-N SiC Wafer Reasearch ukukhiqizwa kwe-Dummy grade Dia150mm I-Silicon carbide substrate

Incazelo emfushane:

Singahlinzeka ngokushisa okuphezulu kwe-superconducting encane yefilimu substrate, amafilimu amancane kazibuthe kanye ne-ferroelectric encane yefilimu substrate, i-semiconductor crystal, i-crystal optical, i-laser crystal materials, ngesikhathi esifanayo ihlinzeka ngokuma, ukusika i-crystal, ukugaya, ukupholisha kanye nezinye izinsizakalo zokucubungula.Ama-substrates ethu e-SiC avela e-Tankeblue Factory e-China.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

6 intshi ububanzi be-silicon carbide (SiC) ukucaciswa kwe-substrate

Ibanga

Zero MPD

Ukukhiqiza

IBanga Lokucwaninga

Dummy Grade

Ububanzi

150.0mm±0.25mm

Ubukhulu

4H-N

350um±25um

4H-SI

500um±25um

I-Wafer Orientation

Ku-eksisi :<0001>±0.5° ku-4H-SI
Ku-axis engaxhunyiwe : 4.0° ukuya ku-<1120>±0.5° ku-4H-N

Ifulethi eliyisisekelo

{10-10}±5.0°

Ubude Befulethi obuyisisekelo

47.5mm±2.5mm

Ukukhishwa eceleni

3mm

TTV/Bow/Warp

≤15um/≤40um/≤60um

I-Micropipe Density

≤1cm-2

≤5cm-2

≤15cm-2

≤50cm-2

Ukumelana 4H-N 4H-SI

0.015~0.028Ω!cm

≥1E5Ω!cm

Ubulukhuni

I-Polish Ra ≤1nm CMP Ra≤0.5nm

#Ukuqhekeka ngokukhanya okukhulu kakhulu

Lutho

1 okuvunyelwe,≤2mm

Ubude obuhlanganisiwe ≤10mm, ubude obubodwa≤2mm

*Amapuleti e-Hex ngokukhanya okuphezulu kakhulu

Indawo eqoqiwe ≤1%

Indawo eqoqiwe ≤ 2%

Indawo eqoqiwe ≤ 5%

*Izindawo ze-Polytype ngokukhanya okukhulu kakhulu

Lutho

Indawo eqoqiwe ≤ 2%

Indawo eqoqiwe ≤ 5%

*&Iklwejwa ngokukhanya okukhulu

3 imihuzuko ukuya ku-1 x wafer ububanzi ubude obukhulayo

5 ukuklwebheka ukuya ku-1 x wafer ubude bobude obukhulayo

5 iziklwebhile ukuya ku-1 x wafer ububanzi ubude obukhulayo

I-Edge chip

Lutho

3 kuvunyelwe,≤0.5mm ngakunye

5 okuvunyelwe,≤1mm ngakunye

Ukungcoliswa ukukhanya okunamandla aphezulu

Lutho

Ukuthengisa Nesevisi Yekhasimende

Ukuthengwa Kwezinto Zokusebenza

Umnyango othenga izinto zokwakha unomthwalo wemfanelo wokuqoqa zonke izinto ezingavuthiwe ezidingekayo ukukhiqiza umkhiqizo wakho.Ukulandeleka okuphelele kwayo yonke imikhiqizo nezinto zokwakha, okuhlanganisa ukuhlaziya kwamakhemikhali nokomzimba kuhlala kutholakala.

Ikhwalithi

Ngesikhathi nangemva kokwakhiwa noma ukwenziwa kwemikhiqizo yakho, umnyango wokulawula ikhwalithi uyabandakanyeka ekuqinisekiseni ukuthi zonke izinto ezisetshenziswayo nokubekezelela ziyahlangabezana noma zedlule izicaciso zakho.

Isevisi

Siyaziqhenya ngokuba nabasebenzi bobunjiniyela bokuthengisa abanolwazi olungaphezu kweminyaka emi-5 embonini ye-semiconductor.Baqeqeshelwe ukuphendula imibuzo yobuchwepheshe kanye nokunikeza izingcaphuno ezifika ngesikhathi zezidingo zakho.

siseduze kwakho nganoma yisiphi isikhathi uma unenkinga, futhi uyixazulule emahoreni ayi-10.

Umdwebo onemininingwane

I-silicon carbide substrate (1)
I-silicon carbide substrate (2)

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