I-6inch 150mm Silicon Carbide SiC Wafers 4H-N uhlobo lwe-MOS noma i-SBD Production Research kanye nebanga le-Dummy

6inch 150mm Silicon Carbide SiC Wafers 4H-N uhlobo lwe-MOS noma Ucwaningo Lokukhiqiza lwe-SBD kanye nebanga le-Dummy Isithombe Esifakiwe

Incazelo emfushane:

I-6-inch silicon carbide single crystal substrate iyinto esebenza kahle kakhulu enezakhiwo ezinhle kakhulu zomzimba namakhemikhali.Ikhiqizwe kusuka ku-high-purity silicon carbide single crystal material, ibonisa ukuqhutshwa kokushisa okuphezulu, ukuzinza kwemishini, nokumelana nezinga lokushisa eliphezulu.Le substrate, eyenziwe ngezinqubo zokukhiqiza ezinembayo nezinto ezisezingeni eliphezulu, isiphenduke into encanyelwayo yokwenziwa kwamadivaysi e-elekthronikhi asebenza kahle kakhulu emikhakheni ehlukahlukene.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izinkambu Zokusebenza

I-6-inch silicon carbide single crystal substrate idlala indima ebalulekile ezimbonini eziningi.Okokuqala, isetshenziswa kakhulu embonini ye-semiconductor ekwenzeni izinto zikagesi ezinamandla amakhulu njengama-transistors, amasekethe ahlanganisiwe, namamojula wamandla.I-conductivity yayo ephezulu ye-thermal kanye nokumelana nokushisa okuphezulu kwenza ukuchithwa okungcono kokushisa, okuholela ekusebenzeni okuthuthukisiwe nokuthembeka.Okwesibili, ama-wafers e-silicon carbide abalulekile emikhakheni yocwaningo ukuze kuthuthukiswe izinto ezintsha namadivayisi.Ukwengeza, i-silicon carbide wafer ithola ukusetshenziswa okubanzi emkhakheni we-optoelectronics, okuhlanganisa ukukhiqizwa kwama-LED nama-laser diode.

Imininingwane Yomkhiqizo

I-6-inch silicon carbide single crystal substrate inobubanzi obungama-intshi angu-6 (cishe u-152.4 mm).Ubukhulu obungaphezulu bungu-Ra <0.5 nm, futhi ukujiya kungu-600 ± 25 μm.I-substrate ingenziwa ngokwezifiso ngohlobo lwe-N noma uhlobo lwe-P, ngokuya ngezidingo zamakhasimende.Ngaphezu kwalokho, ikhombisa ukuzinza kwemishini, ekwazi ukumelana nengcindezi nokudlidliza.

Ububanzi		150±2.0mm (6inch)
Ubukhulu		350 μm±25μm
Ukuqondisa		Ku-eksisi : <0001>±0.5°		Ku-axis evaliwe:4.0° ukuya ku-1120±0.5°
I-Polytype		4H
Ukungazweli(Ω·cm)	4H-N	0.015~0.028 Ω·cm/0.015~0.025ohm·cm
	4/6H-SI	>1E5
Umumo oyisicaba oyinhloko		{10-10}±5.0°
Ubude obuyisisekelo obuyisicaba (mm)		47.5 mm±2.5 mm
Umphetho		I-Chamfer
I-TTV/Umnsalo/I-Warp (um)		≤15 /≤40 /≤60
I-AFM Front (Si-face)		I-Polish Ra≤1 nm
		I-CMP Ra≤0.5 nm
I-LTV		≤3μm(10mm*10mm)	≤5μm(10mm*10mm)		≤10μm(10mm*10mm)
I-TTV		≤5μm	≤10μm		≤15μm
Ikhasi eliwolintshi/imigodi/imifantu/ukungcola/amabala/ama-striations		Lutho	Lutho		Lutho
ama-indenti		Lutho	Lutho		Lutho

I-6-inch silicon carbide single crystal substrate iyinto esebenza kahle kakhulu esetshenziswa kakhulu kuzimboni zesemiconductor, ucwaningo, kanye ne-optoelectronics.Inikeza ukuqhutshwa kwe-thermal okuhle kakhulu, ukuzinza kwemishini, nokumelana nezinga lokushisa eliphezulu, okwenza ifaneleke ukwakhiwa kwemishini ye-elekthronikhi enamandla amakhulu kanye nocwaningo lwezinto ezintsha.Sihlinzeka ngemininingwane ehlukahlukene kanye nezinketho zokwenza ngendlela oyifisayo ukuhlangabezana nezidingo ezahlukahlukene zamakhasimende.Xhumana nathi ukuze uthole imininingwane eyengeziwe ngama-wafers e-silicon carbide!