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I-wafer ye-SiC yohlobo lwe-P engu-4H/6H-P 3C-N ubukhulu obuyi-6inch obungu-350 μm obune-Primieration Flat Eyinhloko

I-wafer ye-SiC yohlobo lwe-P engu-4H/6H-P 3C-N Ubukhulu obuyi-intshi eziyi-6 obungu-350 μm obune-Primieration Flat Eyinhloko Isithombe Esifakiwe
  • I-wafer ye-SiC yohlobo lwe-P engu-4H/6H-P 3C-N ubukhulu obuyi-6inch obungu-350 μm obune-Primieration Flat Eyinhloko
  • I-wafer ye-SiC yohlobo lwe-P engu-4H/6H-P 3C-N ubukhulu obuyi-6inch obungu-350 μm obune-Primieration Flat Eyinhloko
  • I-wafer ye-SiC yohlobo lwe-P engu-4H/6H-P 3C-N ubukhulu obuyi-6inch obungu-350 μm obune-Primieration Flat Eyinhloko
  • I-wafer ye-SiC yohlobo lwe-P engu-4H/6H-P 3C-N ubukhulu obuyi-6inch obungu-350 μm obune-Primieration Flat Eyinhloko
  • I-wafer ye-SiC yohlobo lwe-P engu-4H/6H-P 3C-N ubukhulu obuyi-6inch obungu-350 μm obune-Primieration Flat Eyinhloko

Incazelo emfushane:

I-P-type SiC wafer, i-4H/6H-P 3C-N, iyinto ye-semiconductor engamasentimitha angu-6 enobukhulu obungu-350 μm kanye nokuma okuyisisekelo okuyisicaba, eyenzelwe izinhlelo zokusebenza ze-elekthronikhi ezithuthukisiwe. Yaziwa ngokuqhuba kwayo ukushisa okuphezulu, i-voltage ephezulu yokuqhekeka, kanye nokumelana namazinga okushisa aphezulu kanye nezindawo ezigqwalisayo, le wafer ifanelekela amadivayisi kagesi asebenza kahle kakhulu. I-P-type doping yethula izimbobo njengezithwali zokushaja eziyinhloko, okwenza ifaneleke kakhulu kuma-electronics kagesi kanye nezinhlelo zokusebenza ze-RF. Isakhiwo sayo esiqinile siqinisekisa ukusebenza okuzinzile ngaphansi kwezimo ze-voltage ephezulu kanye nemvamisa ephezulu, okwenza ifaneleke kahle kumadivayisi kagesi, ama-electronics okushisa okuphezulu, kanye nokuguqulwa kwamandla okusebenza kahle kakhulu. Ukuma okuyisisekelo okuyisicaba kuqinisekisa ukuhambisana okunembile enkambisweni yokukhiqiza, okunikeza ukuhambisana ekwakhiweni kwedivayisi.


Izici

Imininingwane4H/6H-P Uhlobo lwe-SiC Composite Substrates Ithebula lamapharamitha avamile

6 I-substrate ye-Silicon Carbide (SiC) ububanzi be-intshi Imininingwane

Ibanga Ukukhiqizwa kwe-MPD okungekhoIbanga (Z) Ibanga) Ukukhiqizwa OkujwayelekileIbanga (P) Ibanga) Ibanga Eliyimbumbulu (D Ibanga)
Ububanzi 145.5 mm ~ 150.0 mm
Ubukhulu 350 μm ± 25 μm
Ukuqondiswa kwe-Wafer -Offi-axis: 2.0°-4.0°ukuya ku-[1120] ± 0.5° ye-4H/6H-P, Ku-axis:〈111〉± 0.5° ye-3C-N
Ubuningi be-Micropipe 0 cm-2
Ukumelana uhlobo lwe-p 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
uhlobo lwe-n 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Ukuqondiswa Okuyisisekelo Okuyisicaba 4H/6H-P -{1010} ± 5.0°
3C-N -{110} ± 5.0°
Ubude Obuphansi Obuyinhloko 32.5 mm ± 2.0 mm
Ubude Besibili Obuyisicaba 18.0 mm ± 2.0 mm
Ukuqondiswa Kwesibili Okuyisicaba I-silicon ibheke phezulu: 90° CW. kusuka ku-Prime flat ± 5.0°
Ukukhishwa Komphetho 3 mm 6 mm
I-LTV/TTV/Umnsalo/I-Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Ubulukhuni I-Polish Ra≤1 nm
I-CMP Ra≤0.2 nm Ra≤0.5 nm
Imifantu Yomphetho Ngokukhanya Okunamandla Okuphezulu Akukho Ubude obuhlanganisiwe ≤ 10 mm, ubude obubodwa ≤2 mm
Amapuleti e-Hex Ngokukhanya Okuphezulu Indawo eqongelelayo ≤0.05% Indawo ehlanganisiwe ≤0.1%
Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu Akukho Indawo eqongelelekayo ≤3%
Ukufakwa kwekhabhoni ebonakalayo Indawo eqongelelayo ≤0.05% Indawo eqongelelayo ≤3%
Ukuklwebheka Komphezulu We-Silicon Ngokukhanya Okunamandla Okuphezulu Akukho Ubude obuhlanganisiwe ≤1 × ububanzi be-wafer
Ama-Edge Chips Aphezulu Ngokukhanya Okunamandla Akukho okuvunyelwe ububanzi nokujula okungu-≥0.2mm 5 kuvunyelwe, ≤1 mm ngayinye
Ukungcoliswa Komphezulu We-Silicon Ngu-High Intensity Akukho
Ukupakisha Ikhasethi ye-Multi-wafer noma i-Single Wafer

Amanothi:

※ Imikhawulo yamaphutha isebenza kuyo yonke indawo ye-wafer ngaphandle kwendawo engafakwanga emaphethelweni. # Imihuzuko kufanele ihlolwe ebusweni be-Si o

I-wafer ye-P-type SiC, engu-4H/6H-P 3C-N, enobukhulu bayo obungu-6 intshi kanye nobukhulu obungu-350 μm, idlala indima ebalulekile ekukhiqizweni kwezimboni kwe-electronics yamandla asebenza kahle kakhulu. Ukushisa kwayo okuhle kakhulu kanye ne-voltage ephezulu yokuqhekeka kwenza kube kuhle kakhulu ekukhiqizeni izingxenye ezifana nokushintsha kwamandla, ama-diode, nama-transistors asetshenziswa ezindaweni ezishisa kakhulu njengezimoto zikagesi, amagridi kagesi, kanye nezinhlelo zamandla avuselelekayo. Ikhono le-wafer lokusebenza kahle ezimweni ezinzima liqinisekisa ukusebenza okuthembekile ezisetshenzisweni zezimboni ezidinga amandla amaningi kanye nokusebenza kahle kwamandla. Ngaphezu kwalokho, ukuqondiswa kwayo okuyisisekelo okuyisicaba kusiza ekuhleleni okunembile ngesikhathi sokwenziwa kwedivayisi, ukuthuthukisa ukusebenza kahle kokukhiqiza kanye nokuvumelana komkhiqizo.

Izinzuzo ze-substrates ze-N-type SiC ezihlanganisiwe zifaka phakathi

  • Ukushisa Okuphezulu Kokushisa: Ama-wafer e-P-type SiC akhipha ukushisa ngempumelelo, okwenza kube kuhle kakhulu ekusetshenzisweni kwezinga lokushisa eliphezulu.
  • I-Voltage Ephezulu Yokuqhekeka: Iyakwazi ukumelana nama-voltage aphezulu, iqinisekisa ukuthembeka kuma-electronics anamandla kanye namadivayisi ane-voltage ephezulu.
  • Ukumelana Nezindawo Ezinzima: Ukuqina okuhle kakhulu ezimweni ezimbi kakhulu, njengamazinga okushisa aphezulu kanye nezindawo ezigqwalayo.
  • Ukuguqulwa Kwamandla Okusebenzayo: I-doping yohlobo lwe-P yenza kube lula ukuphatha amandla ngendlela ephumelelayo, okwenza i-wafer ifanelekele izinhlelo zokuguqula amandla.
  • Ukuqondiswa Okuyisisekelo Okuyisicaba: Iqinisekisa ukuhambisana okunembile ngesikhathi sokukhiqiza, ithuthukisa ukunemba kwedivayisi kanye nokungaguquguquki.
  • Isakhiwo Esincane (350 μm): Ubukhulu obuhle be-wafer busekela ukuhlanganiswa kwamadivayisi kagesi athuthukile, anesikhala esincane.

Sekukonke, i-P-type SiC wafer, 4H/6H-P 3C-N, inikeza izinzuzo eziningi ezenza ifaneleke kakhulu ekusetshenzisweni kwezimboni kanye ne-elekthronikhi. Ukushisa kwayo okuphezulu kanye ne-voltage yokuqhekeka kwenza ukusebenza okuthembekile ezindaweni ezinokushisa okuphezulu kanye ne-voltage ephezulu, kuyilapho ukumelana kwayo nezimo ezinzima kuqinisekisa ukuqina. I-P-type doping ivumela ukuguqulwa kwamandla okuphumelelayo, okwenza kube kuhle kakhulu kuma-electronics kagesi kanye nezinhlelo zamandla. Ngaphezu kwalokho, ukuqondiswa okuyisisekelo kwe-wafer kuqinisekisa ukuhambisana okunembile ngesikhathi senqubo yokukhiqiza, okuthuthukisa ukuhambisana kokukhiqiza. Njengoba iwugqinsi olungama-350 μm, ifaneleka kahle ukuhlanganiswa kumadivayisi athuthukile, aqinile.

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