I-3inch Dia76.2mm SiC isekela i-HPSI Prime Research kanye nebanga le-Dummy

Incazelo emfushane:

I-Semi-insulating substrate ibhekisela ekumelaneni okuphezulu kuno-100000Ω-cm we-silicon carbide substrate, esetshenziswa kakhulu ekwenzeni amadivaysi e-gallium nitride microwave frequency frequency, iyisisekelo senkundla yokuxhumana engenantambo.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-silicon carbide substrates ingahlukaniswa izigaba ezimbili

I-conductive substrate: isho ukumelana ne-15~30mΩ-cm ye-silicon carbide substrate.I-silicon carbide epitaxial wafer ekhule isuka ku-conductive silicon carbide substrate ingenziwa futhi ibe yizisetshenziswa zikagesi, ezisetshenziswa kakhulu ezimotweni zamandla amasha, ama-photovoltaics, amagridi ahlakaniphile, kanye nezokuthutha zikaloliwe.

I-Semi-insulating substrate ibhekisela ekumelaneni okuphezulu kuno-100000Ω-cm we-silicon carbide substrate, esetshenziswa kakhulu ekwenzeni amadivaysi e-gallium nitride microwave frequency frequency, iyisisekelo senkundla yokuxhumana engenantambo.

Kuyingxenye eyisisekelo emkhakheni wokuxhumana okungenantambo.

I-silicon carbide conductive kanye ne-semi-insulating substrates isetshenziswa ezinhlobonhlobo zemishini kagesi namadivayisi kagesi, kufaka phakathi kodwa kungagcini kulokhu okulandelayo:

Amadivayisi anamandla aphezulu we-semiconductor (i-conductive): Ama-substrates e-silicon carbide anamandla enkambu yokuphuka okuphezulu kanye nokuhanjiswa kwe-thermal, futhi afaneleka ukukhiqizwa kwama-transistors amandla aphezulu kanye nama-diode namanye amadivaysi.

Imishini kagesi ye-RF (i-semi-insulated): Ama-substrates e-Silicon Carbide anesivinini esikhulu sokushintsha namandla, alungele izinhlelo zokusebenza ezifana nezikhulisamandla zamandla e-RF, amadivaysi e-microwave namaswishi amafrikhwensi aphezulu.

Imishini ye-Optoelectronic (i-semi-insulated): Ama-substrates e-silicon carbide anegebe elibanzi lamandla kanye nokuzinza okuphezulu kwe-thermal, alungele ukwenza ama-photodiode, amaseli elanga nama-laser diode namanye amadivaysi.

Izinzwa zokushisa (i-conductive): Ama-substrates e-silicon carbide ane-conductivity ephezulu ye-thermal kanye nokuzinza kwe-thermal, alungele ukukhiqizwa kwezinzwa zokushisa okuphezulu nezinsimbi zokulinganisa izinga lokushisa.

Inqubo yokukhiqiza kanye nokusetshenziswa kwe-silicon carbide conductive kanye ne-semi-insulating substrates inezinhlobonhlobo zezinkambu namandla, okuhlinzeka ngamathuba amasha okuthuthukiswa kwezinto zikagesi kanye namadivayisi kagesi.

Umdwebo onemininingwane

Ibanga le-Dummy (1)
Ibanga le-Dummy (2)
Ibanga le-Dummy (3)

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  • Olandelayo:

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