6inch HPSI SiC substrate wafer Silicon Carbide Semi-insulting SiC wafers

6inch HPSI SiC substrate wafer Silicon Carbide Semi-inhlamba SiC wafers Isithombe Esifakiwe

Incazelo emfushane:

I-wafer ye-crystal SiC eyodwa yekhwalithi ephezulu (i-Silicon Carbide esuka ku-SICC) iye embonini ye-electronic kanye ne-optoelectronic.I-3inch SiC wafer iyisici sesizukulwane esilandelayo se-semiconductor, amawafa e-silicon-carbide angama-intshi angu-3-intshi.Ama-wafers enzelwe ukwenziwa kwamandla, i-RF kanye namadivayisi we-optoelectronics.

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-PVT Silicon Carbide Crystal SiC Growth Technology

Izindlela zamanje zokukhula ze-SiC single crystal ikakhulukazi zifaka lezi zintathu ezilandelayo: indlela yesigaba se-liquid, indlela yokubeka umhwamuko wamakhemikhali okushisa aphezulu, kanye nendlela yokuthutha yesigaba somhwamuko (PVT).Phakathi kwazo, indlela ye-PVT iwubuchwepheshe obucwaningwe kakhulu futhi obuvuthiwe bokukhula kwekristalu eyodwa ye-SiC, kanye nobunzima bayo bezobuchwepheshe:

(1) Ikristalu eyodwa ye-SiC ekushiseni okuphezulu kuka-2300 ° C ngaphezu kwegumbi legraphite elivaliwe ukuze kuqedelwe inqubo yokuguqula kabusha "i-solid - gas - solid", umjikelezo wokukhula mude, kunzima ukuwulawula, futhi uthambekele kuma-microtubules, inclusions kanye ezinye iziphambeko.

(2) Ikristalu eyodwa ye-silicon carbide, ehlanganisa izinhlobo ezingaphezu kuka-200 zamakristalu ahlukene, kodwa ukukhiqizwa kohlobo olulodwa kuphela lwekristalu, kulula ukukhiqiza ukuguqulwa kohlobo lwekristalu ekukhuleni okuholela ekufakweni kohlobo oluningi, inqubo yokulungiselela eyodwa. uhlobo oluthile lwe-crystal lunzima ukulawula ukuzinza kwenqubo, isibonelo, i-mainstream yamanje yohlobo lwe-4H.

(3) I-Silicon carbide i-crystal single growth field eshisayo kune-gradient yokushisa, okuholela enqubweni yokukhula kwekristalu kukhona ukucindezeleka kwangaphakathi kwangaphakathi kanye nokukhishwa okubangelwayo, amaphutha nokunye ukukhubazeka okwenziwe.

(4) Inqubo yokukhula kwekristalu eyodwa ye-silicon carbide idinga ukulawula ngokuqinile ukwethulwa kokungcola kwangaphandle, ukuze kutholwe ubucwebe obuphakeme kakhulu bokuvikela i-semi-insulating crystal noma i-conductive crystal doped conductive.Kuma-semi-insulating silicon carbide substrates asetshenziswa kumadivayisi e-RF, izakhiwo zikagesi zidinga ukufezwa ngokulawula ukugxiliswa kokungcola okuphansi kakhulu kanye nezinhlobo ezithile zokukhubazeka kwamaphuzu kukristalu.