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I-SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n uhlobo 2 3 4 6 8inch olutholakalayo

I-SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI(High purity Semi-Insulating) 4H/6H-P 3C -n uhlobo 2 3 4 6 8inch Isithombe Esifakiwe
  • I-SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n uhlobo 2 3 4 6 8inch olutholakalayo
  • I-SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n uhlobo 2 3 4 6 8inch olutholakalayo
  • I-SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n uhlobo 2 3 4 6 8inch olutholakalayo
  • I-SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n uhlobo 2 3 4 6 8inch olutholakalayo
  • I-SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n uhlobo 2 3 4 6 8inch olutholakalayo
  • I-SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n uhlobo 2 3 4 6 8inch olutholakalayo

Incazelo emfushane:

Sinikezela ngokukhethwa okuhlukahlukene kwamawafa ekhwalithi ephezulu e-SiC (Silicon Carbide), agxile kakhulu kumawafa ohlobo lwe-N-4H-N kanye ne-6H-N, alungele ukusetshenziswa kuma-optoelectronics athuthukile, amadivayisi kagesi, kanye nezindawo ezinezinga lokushisa eliphezulu. . Lawa mawafa ohlobo lwe-N aziwa ngokusebenza kwawo okushisayo okukhethekile, ukuzinza okuvelele kukagesi, nokuqina okumangalisayo, okuwenza afanelekele izinhlelo zokusebenza ezisebenza kahle ezifana nogesi wamandla, izinhlelo zokushayela izimoto zikagesi, iziguquli zamandla avuselelekayo, nezinto zikagesi zezimboni. Ngaphezu kweminikelo yethu yohlobo lwe-N, siphinde sinikeze amawafa ohlobo lwe-P-4H/6H-P kanye ne-3C SiC ngezidingo ezikhethekile, okuhlanganisa ama-high-frequency kanye namadivayisi e-RF, kanye nezicelo ze-photonic. Ama-wafers ethu atholakala ngosayizi osuka kumayintshi angu-2 ukuya kwangu-8, futhi sinikeza izixazululo ezilungiselelwe ukuhlangabezana nezidingo ezithile zemikhakha yezimboni ehlukahlukene. Ukuze uthole imininingwane eyengeziwe noma imibuzo, sicela ukhululeke ukusithinta.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izakhiwo

I-4H-N kanye ne-6H-N (Ama-SiC Wafers ohlobo lwe-N)

Isicelo:Isetshenziswa ngokuyinhloko kuma-electronics wamandla, ama-optoelectronics, nezinhlelo zokusebenza ezishisa kakhulu.

Ibanga Lobubanzi:50.8 mm kuya ku-200 mm.

Ubukhulu:350 μm ± 25 μm, enogqinsi lokuzikhethela luka-500 μm ± 25 μm.

Ukungazweli:N-uhlobo 4H/6H-P: ≤ 0.1 Ω·cm (Z-grade), ≤ 0.3 Ω·cm (P-grade); N-uhlobo 3C-N: ≤ 0.8 mΩ·cm (Z-grade), ≤ 1 mΩ·cm (P-grade).

Ukuqina:I-Ra ≤ 0.2 nm (CMP noma i-MP).

Ukuminyana kweMibhobho (MPD):< 1 eya/cm².

I-TTV: ≤ 10 μm kuwo wonke amadayamitha.

I-Wap: ≤ 30 μm (≤ 45 μm ngamawafa angama-intshi angu-8).

Ukukhishwa komphetho:3 mm kuya ku-6 mm kuye ngohlobo lwe-wafer.

Ukupakishwa:Ikhasethi le-wafer eningi noma isiqukathi se-wafer esisodwa.

Ohter usayizi otholakalayo 3inch 4inch 6inch 8inch

I-HPSI (High Purity Semi-Insulating SiC Wafers)

Isicelo:Isetshenziselwa amadivayisi adinga ukumelana okuphezulu nokusebenza okuzinzile, okufana namadivayisi e-RF, izinhlelo zokusebenza zezithombe, nezinzwa.

Ibanga Lobubanzi:50.8 mm kuya ku-200 mm.

Ubukhulu:Ukujiya okujwayelekile okungu-350 μm ± 25 μm ngezinketho zamawafa amakhulu afika ku-500 μm.

Ukuqina:I-Ra ≤ 0.2 nm.

Ukuminyana kweMibhobho (MPD): ≤ 1 eya/cm².

Ukungazweli:Ukumelana okuphezulu, okuvame ukusetshenziswa ezinhlelweni zokuvikela i-semi-insulating.

I-Wap: ≤ 30 μm (ngosayizi abancane), ≤ 45 μm kumadiamitha amakhulu.

I-TTV: ≤ 10 μm.

Ohter usayizi otholakalayo 3inch 4inch 6inch 8inch

4H-P,6H-P&3C Isicwecwana se-SiC(P-uhlobo lwe-SiC Wafers)

Isicelo:Ikakhulukazi amandla kanye namadivayisi anemvamisa ephezulu.

Ibanga Lobubanzi:50.8 mm kuya ku-200 mm.

Ubukhulu:350 μm ± 25 μm noma izinketho ezenziwe ngokwezifiso.

Ukungazweli:P-uhlobo 4H/6H-P: ≤ 0.1 Ω·cm (Z-grade), ≤ 0.3 Ω·cm (P-grade).

Ukuqina:I-Ra ≤ 0.2 nm (CMP noma i-MP).

Ukuminyana kweMibhobho (MPD):< 1 eya/cm².

I-TTV: ≤ 10 μm.

Ukukhishwa komphetho:3 mm kuya ku-6 mm.

I-Wap: ≤ 30 μm osayizi abancane, ≤ 45 μm osayizi abakhulu.

Ohter usayizi otholakalayo 3inch 4inch 6inch5×5 10×10

Ithebula Lepharamitha Yedatha Eyingxenye

Impahla

2 intshi

3inch

4intshi

6intshi

8inch

Uhlobo

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI/4H-SEMI

Ububanzi

50.8 ± 0.3 mm

76.2±0.3mm

100±0.3mm

150±0.3mm

200 ± 0.3 mm

Ubukhulu

330 ± 25 um

350 ±25 um

350 ±25 um

350 ±25 um

350 ±25 um

350±25um

500±25um

500±25um

500±25um

500±25um

noma ngokwezifiso

noma ngokwezifiso

noma ngokwezifiso

noma ngokwezifiso

noma ngokwezifiso

Ubulukhuni

I-Ra ≤ 0.2nm

I-Ra ≤ 0.2nm

I-Ra ≤ 0.2nm

I-Ra ≤ 0.2nm

I-Ra ≤ 0.2nm

I-Wap

≤ 30um

≤ 30um

≤ 30um

≤ 30um

≤45um

I-TTV

≤ 10um

≤ 10um

≤ 10um

≤ 10um

≤ 10um

Klwelwa/Dig

I-CMP/MP

I-MPD

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

Isimo

Round, Flat 16mm; OF ubude 22mm; OF Ubude 30/32.5mm; OF Ubude obungama-47.5mm; I-NOCH; I-NOCH;

Bevel

45°, SEMI Spec; C Umumo

 Ibanga

Ibanga lokukhiqiza le-MOS&SBD; Ibanga locwaningo; Ibanga le-Dummy, Ibanga le-Seed wafer

Ukuphawula

Ububanzi, Ubukhulu, Ukuma, ukucaciswa okungenhla kungenziwa ngokwezifiso ngesicelo sakho

 

Izinhlelo zokusebenza

·Amandla kagesi

Amawafa ohlobo lwe-SiC abalulekile kumishini kagesi enamandla ngenxa yekhono lazo lokuphatha amandla kagesi aphezulu kanye namandla aphezulu. Avame ukusetshenziswa ekuguquleni amandla, ama-inverter, namadrayivu ezimoto ezimbonini ezifana namandla avuselelekayo, izimoto zikagesi, kanye ne-automation yezimboni.

· Optoelectronics
Izinto ze-SiC zohlobo lwe-N, ikakhulukazi izinhlelo zokusebenza ze-optoelectronic, zisetshenziswa kumadivayisi afana nama-light-emitting diode (ama-LED) nama-laser diode. I-thermal conductivity ephezulu kanye ne-bandgap ebanzi izenza zilungele amadivayisi we-optoelectronic asebenza kahle kakhulu.

·Izinhlelo Zezinga Lokushisa Eziphezulu
Amawafa e-4H-N 6H-N SiC afaneleka kahle ezindaweni ezinethempelesha eliphezulu, njengezinzwa namadivayisi kagesi asetshenziswa endaweni ye-aerospace, yezimoto, nezinhlelo zokusebenza zezimboni lapho ukunqanyulwa kokushisa nokuzinza emazingeni okushisa aphakeme kubaluleke kakhulu.

·Amadivayisi e-RF
Amawafa e-4H-N 6H-N SiC asetshenziswa kumadivayisi wefrikhwensi yomsakazo (RF) asebenza kumabanga amafrikhwensi aphezulu. Zisetshenziswa ezinhlelweni zokuxhumana, ubuchwepheshe be-radar, kanye nokuxhumana ngesathelayithi, lapho amandla aphezulu nokusebenza kuyadingeka.

·Izicelo Photonic
Ku-photonics, ama-wafer e-SiC asetshenziselwa amadivayisi afana nama-photodetectors nama-modulators. Izakhiwo ezihlukile zento esetshenziswayo ziyivumela ukuthi isebenze ngempumelelo ekukhiqizeni ukukhanya, ukuguquguquka, nokutholwa ezinhlelweni zokuxhumana ezibonakalayo namadivayisi wokuthwebula izithombe.

·Izinzwa
Ama-wafers e-SiC asetshenziswa ezinhlobonhlobo zezinhlelo zokusebenza zezinzwa, ikakhulukazi ezindaweni ezinokhahlo lapho ezinye izinto zingase zehluleke. Lokhu kufaka phakathi izinga lokushisa, ingcindezi, nezinzwa zamakhemikhali, ezibalulekile emikhakheni efana nezimoto, uwoyela negesi, nokuqapha imvelo.

·I-Electric Vehicle Drive Systems
Ubuchwepheshe be-SiC budlala indima ebalulekile ezimotweni zikagesi ngokwenza ngcono ukusebenza kahle nokusebenza kwezinhlelo zokushayela. Ngama-semiconductors amandla e-SiC, izimoto zikagesi zingafinyelela impilo engcono yebhethri, izikhathi zokushaja ngokushesha, nokusebenza kahle kwamandla okukhulu.

·Izinzwa Ezithuthukile neziguquli zezithombe
Kubuchwepheshe bezinzwa ezithuthukisiwe, amawafa e-SiC asetshenziselwa ukudala izinzwa ezinemba okuphezulu zezinhlelo zokusebenza kumarobhothi, izinto zezokwelapha, nokuqapha indawo ezungezile. Kuma-photonic converters, izakhiwo ze-SiC ziyasetshenziswa ukuze kunikwe amandla ukuguqulwa okusebenzayo kwamandla kagesi abe amasignali abonakalayo, okubalulekile kwezokuxhumana kanye nengqalasizinda ye-inthanethi enesivinini esikhulu.

Q&A

Q:Iyini i-4H ku-4H SiC?
A:"4H" ku-4H SiC ibhekisela esakhiweni sekristalu se-silicon carbide, ikakhulukazi ifomu eliyi-hexagonal elinezendlalelo ezine (H). I-"H" ikhombisa uhlobo lwe-polytype ene-hexagonal, ilwehlukanisa kwamanye ama-SiC polytypes afana no-6H noma u-3C.

Q:Iyini i-thermal conductivity ye-4H-SiC?
A:I-thermal conductivity ye-4H-SiC (Silicon Carbide) icishe ibe ngu-490-500 W/m·K ekamelweni lokushisa. Lokhu kuhanjiswa kwe-thermal ephezulu kuyenza ifaneleke ezinhlelweni zikagesi zikagesi nasezindaweni ezinezinga lokushisa eliphezulu, lapho ukulahlwa kokushisa okusebenzayo kubalulekile.

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