I-LT Lithium Tantalate (LiTaO3) Ikristalu 2inch/3inch/4inch/6inch I-Orientaiton Y-42°/36°/108° Ubukhulu 250-500um

I-LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6inch Orientaiton Y-42°/36°/108° Ubukhulu 250-500um Isithombe Esifakiwe

Incazelo emfushane:

Ama-wafer e-LiTaO₃ amelela uhlelo olubalulekile lwezinto ze-piezoelectric kanye ne-ferroelectric, abonisa ama-coefficients e-piezoelectric ahlukile, ukuzinza kokushisa, kanye nezakhiwo ze-optical, okwenza kube yinto ebalulekile kuma-filters e-surface acoustic wave (SAW), ama-resonator e-bulk acoustic wave (BAW), ama-optical modulators, kanye nama-infrared detectors. I-XKH igxile ku-R&D ye-wafer yekhwalithi ephezulu ye-LiTaO₃, isebenzisa izinqubo ezithuthukisiwe ze-Czochralski (CZ) crystal growth kanye ne-liquid phase epitaxy (LPE) ukuqinisekisa i-crystalline homogeneity ephezulu ngobuningi be-defect <100/cm².

I-XKH inikeza ama-wafer e-LiTaO₃ angu-3 intshi, angu-4 intshi, kanye no-6 intshi anezindlela eziningi ze-crystallographic (i-X-cut, i-Y-cut, i-Z-cut), esekela ukwelashwa kwe-doping eyenziwe ngokwezifiso (i-Mg, i-Zn) kanye ne-poling ukuze kuhlangatshezwane nezidingo ezithile zohlelo lokusebenza. I-dielectric constant (ε~40-50), i-piezoelectric coefficient (d₃₃~8-10 pC/N), kanye nokushisa kwe-Curie (~600°C) kusungula i-LiTaO₃ njenge-substrate ekhethwayo yezihlungi ze-high-frequency kanye nezinzwa zokunemba.

Ukukhiqiza kwethu okuhlanganiswe ngokuqondile kuhlanganisa ukukhula kwekristalu, ukugoqa, ukupholisha, kanye nokufakwa kwefilimu encane, kanye nomthamo wokukhiqiza wanyanga zonke odlula ama-wafer angu-3,000 ukuze kusetshenziswe izimboni zokuxhumana ze-5G, i-electronics yabathengi, i-photonics, kanye nezokuvikela. Sinikeza ukubonisana okubanzi kwezobuchwepheshe, ukuhlukaniswa kwamasampula, kanye nezinsizakalo zokulinganisa ivolumu ephansi ukuze sinikeze izixazululo ze-LiTaO₃ ezilungiselelwe kahle.

Sithumelele i-imeyili

Izici

Amapharamitha obuchwepheshe

Igama	I-LiTaO3 yezinga lokubona	Izinga lethebula lomsindo i-LiTaO3
I-Axial	u-Z usike + / - 0.2 °	36 ° ukusika okungu-Y / 42 ° ukusika okungu-Y / X ukusika(+ / - 0.2 °)
Ububanzi	76.2mm + / - 0.3mm/100±0.2mm	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150±0.5mm
Indiza ye-Datum	22mm + / - 2mm	22mm + /-2mm32mm + /-2mm
Ubukhulu	500um + /-5mm1000um + /-5mm	500um + /-20mm350um + /-20mm
I-TTV	≤ 10um	≤ 10um
Izinga lokushisa le-Curie	605 °C + / - 0.7 °C (indlela ye-DTA)	605 °C + / -3 °C (indlela ye-DTA
Ikhwalithi ephezulu	Ukupholisha okunezinhlangothi ezimbili	Ukupholisha okunezinhlangothi ezimbili
Imiphetho enezimbobo	ukuzungeza unqenqema	ukuzungeza unqenqema

Izici Eziyinhloko

1. Isakhiwo sekristalu kanye nokusebenza kukagesi

· Ukuzinza kwe-Crystallographic: Ukubusa kwe-polytype engu-100% 4H-SiC, ukufakwa kwe-multicrystalline okungu-zero (isb., 6H/15R), nge-XRD rocking curve egcwele ububanzi obuphelele ku-half-maximum (FWHM) ≤32.7 arcsec.
· Ukuhamba Okuphezulu Kwesithwali: Ukuhamba kwe-electron okungu-5,400 cm²/V·s (4H-SiC) kanye nokuhamba kwemigodi okungu-380 cm²/V·s, okuvumela ukwakheka kwamadivayisi anemvamisa ephezulu.
·Ukuqina Kwemisebe: Imelana nokushiswa kwemisebe ye-neutron engu-1 MeV ngomkhawulo womonakalo wokufuduka ongu-1×10¹⁵ n/cm², ofanele ukusetshenziswa kwezindiza kanye nezinhlelo zenuzi.

2. Izakhiwo Zokushisa Nezomshini

· Ukushisa Okumangalisayo: 4.9 W/cm·K (4H-SiC), okuphindwe kathathu kune-silicon, okusekela ukusebenza okungaphezu kuka-200°C.
· I-Coefficient Yokukhulisa Ukushisa Okuphansi: I-CTE engu-4.0×10⁻⁶/K (25–1000°C), okuqinisekisa ukuhambisana nokupakishwa okusekelwe ku-silicon nokunciphisa ukucindezeleka kokushisa.

3. Ukulawula Okuphelele Nokucubungula Okunembile
.
· Ubuningi be-Micropipe: <0.3 cm⁻² (ama-wafer angu-8 intshi), ubuningi be-dislocation <1,000 cm⁻² (kuqinisekiswe nge-KOH etching).
· Ikhwalithi Yomphezulu: I-CMP-ipholishwe ku-Ra <0.2 nm, ihlangabezana nezidingo ze-EUV lithography-grade flatness.

Izinhlelo Zokusebenza Eziyinhloko

Isizinda	Izimo Zokusebenza	Izinzuzo Zobuchwepheshe
Ukuxhumana Kwamehlo	Amamojula e-100G/400G e-laser, i-silicon photonics hybrid	Izingxenye zembewu ze-InP zivumela i-bandgap eqondile (1.34 eV) kanye ne-heteroepitaxy esekelwe ku-Si, okunciphisa ukulahleka kokuxhuma kwe-optical.
Izimoto Ezintsha Zamandla	Ama-inverter aphezulu angu-800V, amashaja angaphakathi (OBC)	Ama-substrate angu-4H-SiC amelana no->1,200 V, okunciphisa ukulahlekelwa kokuqhuba ngo-50% kanye nomthamo wesistimu ngo-40%.
Ukuxhumana kwe-5G	Amadivayisi e-RF angamagagasi e-Millimeter (PA/LNA), ama-amplifier kagesi esiteshini esiyisisekelo	Ama-substrate e-SiC angenawo umswakama (ukumelana >10⁵ Ω·cm) avumela ukuhlanganiswa okungenamsebenzi kwe-high-frequency (60 GHz+).
Imishini Yezimboni	Izinzwa zokushisa okuphezulu, ama-transformer amanje, izikrini ze-reactor yenuzi	Izingxenye zembewu ze-InSb (i-bandgap engu-0.17 eV) zinikeza ukuzwela okunamandla okufika ku-300% @ 10 T.

Ama-Wafer e-LiTaO₃ - Izici Eziyinhloko

1. Ukusebenza Okuphezulu Kwe-Piezoelectric

· Ama-coefficient aphezulu e-piezoelectric (d₃₃~8-10 pC/N, K²~0.5%) avumela amadivayisi e-SAW/BAW asebenza ngesivinini esiphezulu ngokulahlekelwa kokufakwa <1.5dB kwezihlungi ze-5G RF

· Ukuhlanganiswa okuhle kakhulu kwe-electromechanical kusekela imiklamo yokuhlunga ye-wide-bandwidth (≥5%) yezinhlelo zokusebenza ze-sub-6GHz kanye ne-mmWave

2. Izakhiwo Zokubona

· Ukucaca kwe-Broadband (ukudluliselwa okungu->70% kusuka ku-400-5000nm) kwama-modulators e-electro-optic afinyelela ku-bandwidth engu->40GHz

· Ukuzwela okunamandla kokukhanya okungeyona i-linear (χ⁽²⁾~30pm/V) kwenza kube lula ukukhiqizwa kwe-harmonic yesibili (SHG) okuphumelelayo ezinhlelweni ze-laser

3. Ukuzinza Kwemvelo

· Izinga lokushisa eliphezulu le-Curie (600°C) ligcina impendulo ye-piezoelectric ezindaweni ze-automotive-grade (-40°C kuya ku-150°C)

· Ukungakwazi ukusebenza kwamakhemikhali ngokumelene nama-asidi/ama-alkali (pH1-13) kuqinisekisa ukuthembeka ekusetshenzisweni kwezinzwa zezimboni

4. Amakhono Okwenza Ngokwezifiso

· Ubunjiniyela bokuqondisa: X-cut (51°), Y-cut (0°), Z-cut (36°) ukuze kutholakale izimpendulo ze-piezoelectric ezenzelwe wena.

· Izinketho zokusebenzisa i-doping: I-Mg-doped (ukumelana nomonakalo we-optical), i-Zn-doped (i-d₃₃ ethuthukisiwe)

· Ukuqeda umphezulu: Ukupholisha okulungele i-Epitaxial (Ra<0.5nm), i-ITO/Au metallization

Ama-Wafer e-LiTaO₃ - Izinhlelo Zokusebenza Eziyinhloko

1. Amamojula E-RF Front-End

· Izihlungi ze-5G NR SAW (Ibhendi n77/n79) ezinesilinganiso sokushisa kwemvamisa (TCF) <|-15ppm/°C|

· Ama-resonator e-BAW e-Ultra-wideband e-WiFi 6E/7 (5.925-7.125GHz)

2. Ama-Photonics Ahlanganisiwe

· Ama-modulators e-Mach-Zehnder asheshayo (>100Gbps) okuxhumana okubonakalayo okuhlangene

· Izitholi ze-infrared ze-QWIP ezinama-wavelength anqunyiwe angashintshwa kusukela ku-3-14μm

3. Izimoto zikagesi

· Izinzwa zokupaka ze-Ultrasonic ezinemvamisa yokusebenza engu->200kHz

· Ama-transducer e-TPMS piezoelectric asinda ekushiseni okungu--40°C kuya ku-125°C

4. Izinhlelo Zokuzivikela

· Izihlungi ze-EW receiver ezine->60dB out-of-band ukwenqatshwa

· Amafasitela e-IR asebenzisa imisebe ye-MWIR engu-3-5μm

5. Ubuchwepheshe Obusha

· Ama-transducer e-optomechanical quantum okuguqulwa kwe-microwave-to-optical

· Ama-PMUT arrays okuthwebula izithombe ze-ultrasound yezokwelapha (isisombululo esingu->20MHz)

Ama-Wafer e-LiTaO₃ - Izinsizakalo ze-XKH

1. Ukuphathwa Kwezinketho Zokuphakelwa

· Ukucutshungulwa kwe-boule-to-wafer kanye nesikhathi sokuhola samaviki ama-4 ukuze kutholakale imininingwane ejwayelekile

· Ukukhiqizwa okwenziwe ngcono ngezindleko kuletha inzuzo yentengo engu-10-15% uma kuqhathaniswa nabancintisana nabo

2. Izixazululo Zenziwe Ngokwezifiso

· Ukugoba okuqondile kokuqondisa: 36°±0.5° Y-cut ukuze kusebenze kahle kakhulu i-SAW

· Izakhi ezifakwe i-doped: i-MgO (5mol%) i-doping yezinhlelo zokusebenza ze-optical

Izinsizakalo zokwenziwa kwensimbi: Ukuhlela amaphethini e-electrode e-Cr/Au (100/1000Å)

3. Usekelo Lobuchwepheshe

· Ukuhlukaniswa kwezinto: Ama-curve okugwedla e-XRD (FWHM<0.01°), ukuhlaziywa kobuso be-AFM

· Ukulingisa idivayisi: Ukumodela kwe-FEM kokwenza ngcono ukwakheka kwesihlungi se-SAW

Isiphetho

Ama-wafer e-LiTaO₃ ayaqhubeka nokuvumela ukuthuthuka kwezobuchwepheshe kuzo zonke izixhumanisi ze-RF, ama-photonics ahlanganisiwe, kanye nezinzwa zemvelo ezinzima. Ubuchwepheshe be-XKH, ukunemba kokukhiqiza, kanye nokusekelwa kobunjiniyela bezinhlelo zokusebenza kusiza amakhasimende ukunqoba izinselele zokuklama ezinhlelweni ze-elekthronikhi zesizukulwane esilandelayo.