I-LiTaO3 Wafer 2inch-8inch 10x10x0.5 mm 1sp 2sp yezokuxhumana ze-5G/6G

Incazelo emfushane:

I-LiTaO3 Wafer (i-lithium tantalate wafer), into ebalulekile kuma-semiconductors esizukulwane sesithathu kanye nama-optoelectronics, isebenzisa izinga lokushisa eliphezulu le-Curie (610°C), ububanzi obubanzi bokucaca (0.4–5.0 μm), i-piezoelectric coefficient ephezulu (d33 > 1,500 pC/N), kanye nokulahleka okuphansi kwe-dielectric (tanδ < 2%)ukuze iguqule ukuxhumana kwe-5G, ukuhlanganiswa kwe-photonic, kanye namadivayisi e-quantum. Isebenzisa ubuchwepheshe bokukhiqiza obuthuthukisiwe njengokuthutha komusi ongokoqobo (PVT)kanye nokufakwa komusi wamakhemikhali (CVD), i-XKH inikeza ama-wafer e-X/Y/Z-cut, 42°Y-cut, kanye nama-wafers agwetshwe ngezikhathi ezithile (PPLT)ngamafomethi angu-2–8-intshi, aqukethe ubulukhuni bomphezulu (Ra) <0.5 nm kanye nobuningi be-micropipe <0.1 cm⁻². Izinsizakalo zethu zifaka phakathi i-Fe doping, ukunciphisa amakhemikhali, kanye nokuhlanganiswa kwe-Smart-Cut okungafani, okubhekana nezihlungi ze-optical ezisebenzayo eziphezulu, ama-infrared detectors, kanye nemithombo yokukhanya ye-quantum. Lokhu kwaziswa kuqhuba intuthuko ekusetshenzisweni kwe-miniaturization, ukusebenza kwemvamisa ephezulu, kanye nokuzinza kokushisa, okusheshisa ukushintshwa kwekhaya kubuchwepheshe obubalulekile.

Sithumelele i-imeyili

Izici

Amapharamitha obuchwepheshe

Igama	I-LiTaO3 yezinga lokubona	Izinga lethebula lomsindo i-LiTaO3
I-Axial	u-Z usike + / - 0.2 °	36 ° ukusika okungu-Y / 42 ° ukusika okungu-Y / X ukusika (+ / - 0.2 °)
Ububanzi	76.2mm + / - 0.3mm/ 100±0.2mm	76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150±0.5mm
Indiza ye-Datum	22mm + / - 2mm	22mm + /-2mm 32mm + /-2mm
Ubukhulu	500um + /-5mm 1000um + /-5mm	500um + /-20mm 350um + /-20mm
I-TTV	≤ 10um	≤ 10um
Izinga lokushisa le-Curie	605 °C + / - 0.7 °C (indlela ye-DTA)	605 °C + / -3 °C (indlela ye-DTA
Ikhwalithi ephezulu	Ukupholisha okunezinhlangothi ezimbili	Ukupholisha okunezinhlangothi ezimbili
Imiphetho enezimbobo	ukuzungeza unqenqema	ukuzungeza unqenqema

Izici Eziyinhloko

1. Ukusebenza kukagesi nokubona
· I-Electro-Optic Coefficient: i-r33 ifinyelela ku-30 pm/V (X-cut), iphakeme ngo-1.5× kune-LiNbO3, okuvumela ukuguqulwa kwe-electro-optic ye-ultra-wideband (>40 GHz bandwidth).
· Impendulo Ebanzi Ye-Spectral: Ibanga lokudluliswa kwe-transmission lingu-0.4–5.0 μm (ubukhulu obungu-8 mm), kanye nomphetho wokumuncwa kwe-ultraviolet ophansi njengo-280 nm, ofanele kakhulu ama-laser e-UV namadivayisi e-quantum dot.
· I-Coefficient Ephansi Ye-Pyroelectric: dP/dT = 3.5×10⁻⁴ C/(m²·K), okuqinisekisa ukuzinza kwezinzwa ze-infrared ezishisa kakhulu.

2. Izakhiwo Zokushisa Nezomshini
· Ukushisa Okuphezulu: 4.6 W/m·K (X-cut), okuphindwe kane kune-quartz, okugcina ukujikeleza kokushisa okungu-200–500°C.
· I-Coefficient Yokukhulisa Ukushisa Okuphansi: I-CTE = 4.1×10⁻⁶/K (25–1000°C), iyahambisana nokupakishwa kwe-silicon ukuze kuncishiswe ukucindezeleka kokushisa.
3. Ukulawula Okuphelele Nokucubungula Okunembile
· Ubuningi be-Micropipe: <0.1 cm⁻² (ama-wafer angu-8 intshi), ubuningi be-dislocation <500 cm⁻² (kuqinisekiswe nge-KOH etching).
· Ikhwalithi Yomphezulu: I-CMP-ipholishwe ku-Ra <0.5 nm, ihlangabezana nezidingo ze-EUV lithography-grade flatness.

Izinhlelo Zokusebenza Eziyinhloko

Isizinda	Izimo Zokusebenza	Izinzuzo Zobuchwepheshe
Ukuxhumana Kwamehlo	Amamojula e-100G/400G DWDM lasers, amamojula e-silicon photonics hybrid	Ukudluliselwa kwe-spectral okubanzi kwe-LiTaO3 wafer kanye nokulahleka kwe-waveguide ephansi (α <0.1 dB/cm) kuvumela ukunwetshwa kwe-C-band.
Ukuxhumana kwe-5G/6G	Izihlungi ze-SAW (1.8–3.5 GHz), izihlungi ze-BAW-SMR	Ama-wafer angu-42° anqunyiwe ngo-Y afinyelela ku-Kt² >15%, aletha ukulahlekelwa okuphansi kokufakwa (<1.5 dB) kanye nokugoqwa okuphezulu (>30 dB).
Ubuchwepheshe be-Quantum	Izitholi ze-photon eyodwa, imithombo yokuguqulwa kwe-parametric down-conversion	I-coefficient ephezulu engeyona eqondile (χ(2)=40 pm/V) kanye nesilinganiso esiphansi sokubala okumnyama (
Ukuzwa Kwezimboni	Izinzwa zokucindezela ezishisa kakhulu, ama-transformer wamanje	Impendulo ye-piezoelectric ye-LiTaO3 wafer (g33 >20 mV/m) kanye nokubekezelelana kwezinga lokushisa eliphezulu (>400°C) kuhambisana nezimo ezibucayi.

Izinsizakalo ze-XKH

1. Ukwenziwa Kwe-Wafer Ngokwezifiso

· Usayizi Nokusika: Ama-wafer angu-2–8 intshi anokusika okungu-X/Y/Z, ukusika okungu-42°Y, kanye nokusika okungokwezifiso kwe-angular (±0.01° ukubekezelelana).

· Ukulawulwa Kokusebenzisa Izidakamizwa: Ukusebenzisa i-Fe, i-Mg ngendlela ye-Czochralski (ibanga lokuhlushwa 10¹⁶–10¹⁹ cm⁻³) ukuze kuthuthukiswe ama-coefficient e-electro-optic kanye nokuzinza kokushisa.

2. Ubuchwepheshe Bezinqubo Ezithuthukisiwe
.
· I-Periodic Poling (PPLT): Ubuchwepheshe be-Smart-Cut bama-wafer e-LTOI, obufinyelela ukunemba kwesikhathi sesizinda esingu-±10 nm kanye nokuguqulwa kwemvamisa ye-quasi-phase-matched (QPM).

· Ukuhlanganiswa Okungajwayelekile: Ama-wafer ahlanganisiwe e-LiTaO3 asekelwe ku-Si (POI) anokulawula ukujiya (300–600 nm) kanye nokuqhuba ukushisa okufika ku-8.78 W/m·K kwezihlungi ze-SAW ezisebenzisa imvamisa ephezulu.

3. Izinhlelo Zokuphatha Ikhwalithi
.
· Ukuhlolwa Kokuphela: I-Raman spectroscopy (ukuqinisekiswa kwe-polytype), i-XRD (i-crystallinity), i-AFM (i-surface morphology), kanye nokuhlolwa kokufana kokukhanya (Δn <5×10⁻⁵).

4. Ukusekelwa Kwe-Global Supply Chain
.
· Amandla Okukhiqiza: Umkhiqizo wanyanga zonke > ama-wafer angu-5,000 (8-inch: 70%), kanye nokulethwa okuphuthumayo kwamahora angu-48.

· Inethiwekhi Yezokuthutha: Ukumbozwa eYurophu, eNyakatho Melika, nase-Asia-Pacific ngemithwalo yendiza/yasolwandle enokupakishwa okulawulwa amazinga okushisa.