I-LT Lithium Tantalate (LiTaO3) I-Crystal 2inch/3inch/4inch/6寸inch Orientaiton Y-42°/36°/108° Ukuqina 250-500um

I-LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6寸inch Orientaiton Y-42°/36°/108° Ukuqina 250-500um Isithombe Esifakiwe

Incazelo emfushane:

Ama-wafer e-LiTaO₃ amelela isistimu yezinto ezibonakalayo ze-piezoelectric ne-ferroelectric ebalulekile, ebonisa ama-coezoelectric coefficients akhethekile, ukuqina okushisayo, kanye nezakhiwo ezibonakalayo, okuwenza abaluleke kakhulu kuzihlungi ze-surface acoustic wave (SAW), i-bulk acoustic wave (BAW) resonators, ama-optical modulators, nama-infrared. I-XKH igxile ku-LiTaO₃ wafer yekhwalithi ephezulu ye-R&D kanye nokukhiqiza, isebenzisa ukukhula kwekristalu okuthuthukisiwe kwe-Czochralski (CZ) kanye nezinqubo ze-liquid phase epitaxy (LPE) ukuze kuqinisekiswe i-homogeneity ye-crystalline ephakeme nokuminyana kwesici <100/cm².

I-XKH ihlinzeka ngamawafa angama-intshi angu-3, angu-4-intshi, kanye no-6-intshi e-LiTaO₃ anomumo we-crystallographic amaningi (i-X-cut, Y-cut, Z-cut), esekela i-doping eyenziwe ngokwezifiso (Mg, Zn) kanye nokwelashwa kwe-poling ukuze kuhlangatshezwane nezidingo ezithile zohlelo lokusebenza. I-dielectric constant (ε~40-50), i-piezoelectric coefficient (d₃₃~8-10 pC/N), nezinga lokushisa le-Curie (~600°C) lisungula i-LiTaO₃ njengendawo encanyelwayo yezihlungi zemvamisa ephezulu nezinzwa ezinembayo.

Ukukhiqiza kwethu okuhlanganiswe kuqondile kuhlanganisa ukukhula kwekristalu, ukucwecwa, ukupholishwa, kanye nokufakwa kwefilimu emincane, enamandla okukhiqiza nyanga zonke adlula ama-wafer angu-3,000 ukuze asebenze ezokuxhumana ze-5G, ama-electronics abathengi, ama-photonics, nezimboni zezokuvikela. Sihlinzeka ngokubonisana okuphelele kwezobuchwepheshe, ukuhlukaniswa kwabalingiswa besampula, kanye nezinsizakalo ze-prototyping ezinevolumu ephansi ukuletha izixazululo ezithuthukisiwe ze-LiTaO₃.

Thumela i-imeyili kithi

Izici

Imingcele yezobuchwepheshe

Igama	I-Optical-grade LiTaO3	Izinga lethebula lomsindo LiTaO3
I-Axial	U-Z usike + / - 0.2 °	36 ° Y ukusika / 42 ° Y ukusika / X ukusika(+ / - 0.2 °)
Ububanzi	76.2mm + / - 0.3mm/100±0.2mm	76.2mm + /-0.3mm100mm +/-0.3mm 0r 150±0.5mm
Indiza ye-Datum	22mm +/ - 2mm	22mm +/-2mm32mm +/-2mm
Ubukhulu	500um +/-5mm1000um +/-5mm	500um +/-20mm350um +/-20mm
I-TTV	≤ 10um	≤ 10um
Izinga lokushisa le-Curie	605 °C + / - 0.7 °C (Indlela ye-DTA)	605 °C + / -3 °C (Indlela ye-DTA
Ikhwalithi yobuso	Ukupholisha okunezinhlangothi ezimbili	Ukupholisha okunezinhlangothi ezimbili
Imiphetho e-Chamfered	ukuzungeza unqenqema	ukuzungeza unqenqema

Izimpawu Ezisemqoka

1.Isakhiwo SeCrystal kanye nokusebenza kukagesi

· I-Crystallographic Stability: 100% 4H-SiC polytype dominance, zero multicrystalline inclusions (isb, 6H/15R), ene-XRD rocking curve ububanzi obugcwele ku-half-maximum (FWHM) ≤32.7 arcsec.
· I-High Carrier Mobility: Ukuhamba kwe-Electron okungu-5,400 cm²/V·s (4H-SiC) nokuhamba kwembobo okungu-380 cm²/V·s, okunika amandla amadizayini edivayisi amaza aphezulu.
·Ukuqina Kokushisa: Imelana neradiation ye-neutron engu-1 MeV enomkhawulo womonakalo wokufuduka ongu-1×10¹⁵ n/cm², ilungele i-aerospace nezinhlelo zokusebenza zenuzi.

2.Izakhiwo ezishisayo nezemishini

· I-Exceptional Thermal Conductivity: 4.9 W/cm·K (4H-SiC), kathathu kune-silicon, esekela ukusebenza okungaphezu kuka-200°C.
· I-Coefficient Yokwandisa Okushisayo Ephansi: I-CTE ye-4.0×10⁻⁶/K (25–1000°C), iqinisekisa ukuhambisana nokupakishwa okusekelwe ku-silicon nokunciphisa ukucindezeleka okushisayo.

3.Ukulawula Iphutha kanye Nokunemba Kokucubungula
.
· Ukuminyana Kwe-Micropipe: <0.3 cm⁻² (ama-wafers amayintshi angu-8), ukuminyana kokuhlukaniswa <1,000 cm⁻² (kuqinisekiswe nge-KOH etching).
· Ikhwalithi Yokuphezulu: I-CMP-ipholishwe yaba ngu-Ra <0.2 nm, ehlangabezana nezimfuneko ze-EUV lithography-grade flatness.

Izinhlelo zokusebenza ezibalulekile

Isizinda	I-Application Scenarios	Izinzuzo Technical
I-Optical Communications	Ama-lasers angu-100G/400G, amamojula we-silicon photonics hybrid	Ama-substrates embewu ye-InP anika amandla i-bandgap eqondile (1.34 eV) ne-Si-based heteroepitaxy, enciphisa ukulahleka kokuxhumanisa kokubona.
Izimoto Ezintsha Zamandla	Ama-inverters angu-800V aphezulu, amashaja angaphakathi (OBC)	Ama-substrates e-4H-SiC amelana > ne-1,200 V, ehlisa ukulahleka kokuqhuba ngo-50% kanye nomthamo wesistimu ngo-40%.
I-5G Communications	Imishini ye-Millimeter-wave RF (PA/LNA), izikhulisamandla zamandla esiteshi	Ama-Semi-insulating SiC substrates (ukumelana >10⁵ Ω·cm) anika amandla ukuhlanganiswa kokungenzi lutho kwe-high-frequency (60 GHz+).
Izisetshenziswa zezimboni	Izinzwa zokushisa okuphezulu, iziguquli zamanje, iziqaphi ze-nuclear reactor	Ama-substrates embewu ye-InSb (0.17 eV bandgap) aletha ukuzwela kazibuthe kufika ku-300%@10 T.

I-LiTaO₃ Wafers - Izimpawu Ezisemqoka

1. Ukusebenza okuphezulu kwePiezoelectric

· Ama-coefficients aphezulu e-piezoelectric (d₃₃~8-10 pC/N, K²~0.5%) anika amandla amadivayisi e-SAW/BAW emvamisa ephezulu ngokulahlekelwa kokufakwa okungu-<1.5dB kwezihlungi ze-5G RF

· Ukuhlanganiswa okuhle kakhulu kwe-electromechanical kusekela umkhawulokudonsa obanzi (≥5%) imiklamo yesihlungi yezinhlelo zokusebenza ezingaphansi kwe-6GHz kanye ne-mmWave

2. Izakhiwo ze-Optical

· Ukubonakala kwe-Broadband (>70% ukudluliswa kusuka ku-400-5000nm) kumamojula we-electro-optic afinyelela >40GHz bandwidth

· Ukuba nokwenzeka okuqinile kokubona okungaqondile (χ⁽²⁾~30pm/V) kusiza isizukulwane sesibili se-harmonic (SHG) kumasistimu we-laser

3. Ukuzinza Kwemvelo

· Izinga lokushisa eliphezulu le-Curie (600°C) ligcina impendulo ye-piezoelectric endaweni yezinga lezimoto (-40°C kuya ku-150°C)

· Ukungangeni kwamakhemikhali ngokumelene nama-acids/alkali (pH1-13) kuqinisekisa ukwethembeka ekusetshenzisweni kwezinzwa zezimboni

4. Amakhono Okwenza ngokwezifiso

Unjiniyela wokuqondisa: X-cut (51°), Y-cut (0°), Z-cut (36°) ukuze uthole izimpendulo ze-piezoelectric ezenzelwe wena.

Izinketho zokudotshwa: I-Mg-doped (ukumelana nomonakalo obonakalayo), i-Zn-doped (ithuthukisiwe d₃₃)

· Ukuphela kokuqedwa kwendawo: Ukupholisha okulungele i-Epitaxial (Ra<0.5nm), i-ITO/Au metallization

I-LiTaO₃ Wafers - Izicelo Eziyinhloko

1. RF Front-End Amamojula

· Izihlungi ze-5G NR SAW (Ibhendi n77/n79) ene-temperature coefficient of frequency (TCF) <|-15ppm/°C|

· I-Ultra-wideband BAW resonators ye-WiFi 6E/7 (5.925-7.125GHz)

2. I-Photonics Edidiyelwe

· Amamojula we-Mach-Zehnder anesivinini esikhulu (>100Gbps) okuxhumana okuhambisanayo kokubona

· Izitholi ze-infrared ze-QWIP ezinamaza amaza amaza anqamulekayo ukusuka ku-3-14μm

3. Ugesi Wezimoto

· Izinzwa zokupaka ze-Ultrasonic ezine->200kHz imvamisa yokusebenza

· Ama-transducer e-TPMS piezoelectric asinda -40°C kuya ku-125°C ukuhamba ngebhayisikili okushisayo

4. Izinhlelo Zokuvikela

· Izihlungi zesamukeli ze-EW ezine>60dB yokunqatshwa ngaphandle kwebhendi

· Amawindi e-IR afuna imicibisholo adlulisa imisebe engu-3-5μm MWIR

5. Emerging Technologies

· Ama-Optomechanical quantum transducer okuguqulwa kwe-microwave-to-optical

· Ukuhlelwa kwe-PMUT kwesithombe se-ultrasound yezokwelapha (>20MHz ukulungiswa)

I-LiTaO₃ Wafers - Izinsizakalo ze-XKH

1. Ukuphathwa kwe-Supply Chain

· Ukucutshungulwa kwe-Boule-to-wafer okunesikhathi sokuhola esingamaviki angu-4 sokucaciswa okujwayelekile

· Ukukhiqiza okunezindleko ezingcono kakhulu okuletha inzuzo yentengo engu-10-15% uma kuqhathaniswa nezimbangi

2. Izixazululo Ngokwezifiso

· I-Orientation-specific wafering: 36°±0.5° Y-cut ukuze uthole ukusebenza kahle kwe-SAW

· Izingoma ezihlanganisiwe: I-MgO (5mol%) ye-doping yezinhlelo zokusebenza zamehlo

Amasevisi ensimbi: Cr/Au (100/1000Å) iphethini ye-electrode

3. Ukusekelwa Kwezobuchwepheshe

· Isici esibalulekile: XRD amajika okunyakazisa (FWHM<0.01°), ukuhlaziya indawo ye-AFM

· Ukulingiswa kwedivayisi: Ukumodela kwe-FEM kokwenziwa ngcono kwedizayini yesihlungi se-SAW

Isiphetho

Ama-wafer e-LiTaO₃ ayaqhubeka nokunika amandla intuthuko yezobuchwepheshe kukho konke ukuxhumana kwe-RF, ama-photonics ahlanganisiwe, nezinzwa zemvelo ezinokhahlo. Ubuchwepheshe bezinto ezibonakalayo be-XKH, ukunemba kokukhiqiza, nokwesekwa kobunjiniyela bohlelo kusiza amakhasimende anqobe izinselele zokuklama kumasistimu kagesi esizukulwane esilandelayo.