I-HPSI SiC Wafer ≥90% Ibanga Lokubona Lokudlulisela Lezibuko ze-AI/AR

Incazelo emfushane:

Ipharamitha	Ibanga	4-Intshi Substrate	6-Intshi Substrate
Ububanzi	Z Ibanga / D Ibanga	99.5 mm – 100.0 mm	149.5 mm – 150.0 mm
Uhlobo lwe-Poly	Z Ibanga / D Ibanga	4H	4H
Ubukhulu	Ibanga le-Z	500 μm ± 15 μm	500 μm ± 15 μm
Ubukhulu	D Ibanga	500 μm ± 25 μm	500 μm ± 25 μm
I-Wafer Orientation	Z Ibanga / D Ibanga	Ku-eksisi: <0001> ± 0.5°	Ku-eksisi: <0001> ± 0.5°
I-Micropipe Density	Ibanga le-Z	≤ 1 cm²	≤ 1 cm²
I-Micropipe Density	D Ibanga	≤ 15 cm²	≤ 15 cm²
Ukumelana	Ibanga le-Z	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Ukumelana	D Ibanga	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm

Thumela i-imeyili kithi

Izici

Isingeniso Esiyinhloko: Iqhaza lama-HPSI SiC Wafers ku-AI/AR Glasses

I-HPSI (I-High-Purity Semi-Insulating) Amawafa e-Silicon Carbide amawafa akhethekile abonakala ngokumelana okuphezulu (>10⁹ Ω·cm) kanye nokuminyana okunesici esiphansi kakhulu. Ezingilazini ze-AI/AR, ngokuyinhloko zisebenza njengesisekelo se-substrate samalensi e-diffractive optical waveguide, ekhuluma ngamabhodlela ahlotshaniswa nezinto ezibonakalayo zendabuko ngokwemibandela yefomu emincane nokukhanya, ukuchithwa kokushisa, nokusebenza kokubona. Isibonelo, izibuko ze-AR ezisebenzisa amalensi e-SiC waveguide zingafinyelela inkambu yokubuka ebanzi kakhulu (i-FOV) engu-70°–80°, kuyilapho zehlisa ukujiya kongqimba lwelensi eyodwa ukuya ku-0.55mm nje nesisindo sibe ngu-2.7g nje, okuthuthukisa kakhulu ukugqoka ukunethezeka nokucwiliswa okubukwayo.

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Izimpawu Ezisemqoka: Indlela I-SiC Material Inika Amandla I-AI/AR Glasses Design

I-High Refractive Index kanye ne-Optical Performance Optimization

Inkomba ye-refractive ye-SiC (2.6–2.7) icishe ibe ngu-50% ephakeme kunaleyo yengilazi evamile (1.8–2.0). Lokhu kuvumela izakhiwo ze-waveguide ezizacile nezisebenza kahle, okunweba kakhulu i-FOV. Inkomba ephezulu ye-refractive iphinde isize ukucindezela "umphumela wothingo" ovamile kuma-waveguides ahlukene, ukuthuthukisa ukuhlanzeka kwesithombe.

I-Exceptional Thermal Management Amandla

Ngokusebenza okushisayo okufika ku-490 W/m·K (eduze naleyo yethusi), i-SiC ingakwazi ukuqeda ngokushesha ukushisa okukhiqizwa amamojula wokubonisa we-Micro-LED. Lokhu kuvimbela ukonakala kokusebenza noma ukuguga kwedivayisi ngenxa yamazinga okushisa aphezulu, okuqinisekisa impilo ende yebhethri nokuzinza okuphezulu.

Amandla Emishini Nokuqina

I-SiC inobulukhuni be-Mohs obungu-9.5 (isibili kuphela kwidayimane), inikezela ukumelana nokuklwebheka, okuyenza ilungele izibuko zabathengi ezivame ukusetshenziswa. Ubulukhuni bayo obungaphezulu bungalawuleka ku-Ra <0.5 nm, ukuqinisekisa ukulahlekelwa okuphansi kanye nokudluliswa kokukhanya okufanayo kakhulu kumagagasi.

I-Electrical Property Compatibility

Ukumelana ne-HPSI SiC (>10⁹ Ω·cm) kusiza ukuvimbela ukuphazamiseka kwesignali. Ingase futhi isebenze njengento esebenza kahle yedivayisi yamandla, ithuthukise amamojula okuphatha amandla ezingilazini ze-AR.

Izikhombisi-ndlela zohlelo lokusebenza eziyisisekelo

Izingxenye Ezibalulekile Zokubona ze-AI/AR Glasses

Amalensi e-Diffractive Waveguide: Ama-substrates e-SiC asetshenziselwa ukwakha amagagasi okukhanya amancane kakhulu asekela i-FOV enkulu kanye nokuqedwa komphumela wothingo.
Ama-Window Plates nama-Prisms: Ngokusikwa nokupholishwa ngendlela oyifisayo, i-SiC ingacutshungulwa ibe amafasitela okuvikela noma ama-optical prism ezingilazi ze-AR, ithuthukise ukudluliswa kokukhanya kanye nokumelana nokugqokwa.

Izicelo Ezinwetshiwe Kweminye Imikhakha

I-Power Electronics: Isetshenziswa kuma-high-frequency, izimo zamandla aphezulu njengama-inverter emoto yamandla amasha kanye nezilawuli zezimoto zezimboni.
I-Quantum Optics: Isebenza njengomsingathi wezikhungo zemibala, esetshenziswa kuma-substrates okuxhumana kwe-quantum nemishini yokuzwa.

I-4 Intshi & 6 Intshi ye-HPSI SiC Substrate Ukuqhathanisa Ukucaciswa

Ipharamitha	Ibanga	4-Intshi Substrate	6-Intshi Substrate
Ububanzi	Z Ibanga / D Ibanga	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
Uhlobo lwe-Poly	Z Ibanga / D Ibanga	4H	4H
Ubukhulu	Ibanga le-Z	500 μm ± 15 μm	500 μm ± 15 μm
Ubukhulu	D Ibanga	500 μm ± 25 μm	500 μm ± 25 μm
I-Wafer Orientation	Z Ibanga / D Ibanga	Ku-eksisi: <0001> ± 0.5°	Ku-eksisi: <0001> ± 0.5°
I-Micropipe Density	Ibanga le-Z	≤ 1 cm²	≤ 1 cm²
I-Micropipe Density	D Ibanga	≤ 15 cm²	≤ 15 cm²
Ukumelana	Ibanga le-Z	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Ukumelana	D Ibanga	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm
I-Primary Flat Orientation	Z Ibanga / D Ibanga	(10-10) ± 5.0°	(10-10) ± 5.0°
Ubude be-Primary Flat	Z Ibanga / D Ibanga	32.5 mm ± 2.0 mm	Inothi
I-Secondary Flat Length	Z Ibanga / D Ibanga	18.0 mm ± 2.0 mm	-
Ukukhishwa kwe-Edge	Z Ibanga / D Ibanga	3 mm	3 mm
I-LTV / TTV / Bow / Warp	Ibanga le-Z	≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm	≤ 2.5 μm / ≤ 6 μm / ≤ 25 μm / ≤ 35 μm
I-LTV / TTV / Bow / Warp	D Ibanga	≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm	≤ 5 μm / ≤ 15 μm / ≤ 40 μm / ≤ 80 μm
Ukuqina	Ibanga le-Z	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm
Ukuqina	D Ibanga	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.5 nm
Ama-Edge Cracks	D Ibanga	Indawo eqoqiwe ≤ 0.1%	Ubude obuqongelelwayo ≤ 20 mm, eyodwa ≤ 2 mm
Izindawo ze-Polytype	D Ibanga	Indawo eqoqiwe ≤ 0.3%	Indawo eqoqiwe ≤ 3%
I-Visual Carbon Inclusions	Ibanga le-Z	Indawo eqoqiwe ≤ 0.05%	Indawo eqoqiwe ≤ 0.05%
I-Visual Carbon Inclusions	D Ibanga	Indawo eqoqiwe ≤ 0.3%	Indawo eqoqiwe ≤ 3%
I-Silicon Surface Scratches	D Ibanga	5 okuvunyelwe, ngakunye ≤1mm	Ubude obuqongelelwayo ≤ 1 x ububanzi
Ama-Edge Chips	Ibanga le-Z	Akukho okuvunyelwe (ububanzi nokujula ≥0.2mm)	Akukho okuvunyelwe (ububanzi nokujula ≥0.2mm)
Ama-Edge Chips	D Ibanga	7 okuvunyelwe, ngakunye ≤1mm	7 okuvunyelwe, ngakunye ≤1mm
I-Threading Screw Dislocation	Ibanga le-Z	-	≤ 500 cm²
Ukupakisha	Z Ibanga / D Ibanga	Ikhasethi elinesinkwa esilucwecwana noma Isitsha Esiyisinkwa Esikodwa	Ikhasethi elinesinkwa esilucwecwana noma Isitsha Esiyisinkwa Esikodwa

Amasevisi e-XKH: Amakhono Ahlanganisiwe Okukhiqiza Nokwenza Ngokwezifiso

Inkampani ye-XKH inamandla okuhlanganisa aqondile ukusuka ezintweni ezingavuthiwe kuya kumawafa aqediwe, amboza lonke uchungechunge lokukhula kwe-SiC substrate, ukusika, ukupholisha, nokucutshungulwa ngokwezifiso. Izinzuzo zesevisi ezibalulekile zifaka:

I-Material Diversity:Singahlinzeka ngezinhlobo zamawafa ahlukahlukene njengohlobo lwe-4H-N, uhlobo lwe-4H-HPSI, uhlobo lwe-4H/6H-P, kanye nohlobo lwe-3C-N. Ukungazweli, ukujiya, nokuma kungalungiswa ngokuya ngezidingo.
.Flexible Size Customization:Sisekela ukucutshungulwa kwe-wafer kusuka kumadiamitha angu-2-intshi kuya kwangu-12-intshi, futhi singase futhi sicubungule izakhiwo ezikhethekile njengezicucu eziyisikwele (isb., 5x5mm, 10x10mm) namaprism angajwayelekile.
I-Optical-Grade Precision Control:I-Wafer Total Thickness Variation (TTV) ingagcinwa ku-<1μm, kanye nobuhwaqane bobuso ku-Ra <0.3 nm, ihlangabezana nezimfuneko zeleveli ye-nano flatness yamadivayisi e-waveguide.
Impendulo ivela ku- Rapid Market:Imodeli yebhizinisi edidiyelwe iqinisekisa ukushintshwa okuphumelelayo ukusuka ku-R&D kuya ekukhiqizweni ngobuningi, isekela yonke into kusukela ekuqinisekisweni kweqoqo elincane ukuya ekuthunyelweni kwevolumu enkulu (isikhathi sokuhola ngokuvamile siyizinsuku eziyi-15-40).

I-FAQ ye-HPSI SiC Wafer

Q1: Kungani i-HPSI SiC ithathwa njengento efanelekile yamalensi e-AR waveguide?
A1: Inkomba yayo ephezulu ye-refractive (2.6–2.7) inika amandla izakhiwo ze-waveguide ezizacile, ezisebenza kahle kakhulu ezisekela inkambu enkulu yokubuka (isb, 70°–80°) kuyilapho isusa "umphumela wothingo".
Q2: I-HPSI SiC ikuthuthukisa kanjani ukuphatha okushisayo ezingilazini ze-AI/AR?
I-A2: Nge-thermal conductivity efika ku-490 W/m·K (eduze nethusi), ikhipha kahle ukushisa ezingxenyeni ezifana nama-Micro-LED, iqinisekisa ukusebenza okuzinzile nempilo ende yedivayisi.
Q3: Yiziphi izinzuzo zokuqina ezinikezwa yi-HPSI SiC ezingilazini ezigqokekayo?
I-A3: Ukuqina kwayo okungavamile (Mohs 9.5) kunikeza ukumelana nokuklwebheka okuphakeme, okuyenza iqine kakhulu ukuze isetshenziswe nsuku zonke ezingilazini ze-AR zebanga lomthengi.