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Ama-2 inch Silicon Carbide Wafers 6H noma 4H N-uhlobo noma amaSemi-Insulating SiC Substrates

2 intshi Silicon Carbide Wafers 6H noma 4H N-uhlobo noma Semi-Insulating SiC Substrates Isithombe Esifakiwe
  • Ama-2 inch Silicon Carbide Wafers 6H noma 4H N-uhlobo noma amaSemi-Insulating SiC Substrates
  • Ama-2 inch Silicon Carbide Wafers 6H noma 4H N-uhlobo noma amaSemi-Insulating SiC Substrates
  • Ama-2 inch Silicon Carbide Wafers 6H noma 4H N-uhlobo noma amaSemi-Insulating SiC Substrates
  • Ama-2 inch Silicon Carbide Wafers 6H noma 4H N-uhlobo noma amaSemi-Insulating SiC Substrates

Incazelo emfushane:

I-Silicon carbide (i-Tankeblue SiC wafers), eyaziwa nangokuthi i-carborundum, i-semiconductor equkethe i-silicon ne-carbon enefomula yamakhemikhali i-SiC.I-SiC isetshenziswa kumishini ye-semiconductor electronics esebenza emazingeni okushisa aphezulu noma ama-voltage aphezulu, noma kokubili.I-SiC futhi ingenye yezingxenye ezibalulekile ze-LED, iyindawo engaphansi edumile yamadivayisi e-GaN akhulayo, futhi isebenza njengesisakazi sokushisa endaweni ephezulu. ama-LED amandla.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Imikhiqizo Enconyiwe

I-4H SiC wafer N-uhlobo
Ububanzi: 2 intshi 50.8mm |4 intshi 100mm |6 intshi 150mm
Umumo: ku-axis 4.0˚ kuya ku-<1120> ± 0.5˚
Ukumelana: <0.1 ohm.cm
Ukuqina: I-Si-face CMP Ra <0.5nm, i-C-face optical polish Ra <1 nm

I-4H SiC wafer Semi-insulating
Ububanzi: 2 intshi 50.8mm |4 intshi 100mm |6 intshi 150mm
Umumo: ku-eksisi {0001} ± 0.25˚
Ukumelana: >1E5 ohm.cm
Ukuqina: I-Si-face CMP Ra <0.5nm, i-C-face optical polish Ra <1 nm

1. Ingqalasizinda ye-5G -- ukunikezwa kwamandla okuxhumana.
Ukunikezwa kwamandla okuxhumana kuyisisekelo samandla sokuxhumana kweseva nesizinda sesiteshi.Ihlinzeka ngamandla kagesi emishinini yokudlulisa ehlukahlukene ukuze kuqinisekiswe ukusebenza okuvamile kohlelo lokuxhumana.

2. Inqwaba eshajayo yezimoto zamandla amasha -- imojuli yamandla yenqwaba yokushaja.
Ukusebenza kahle okuphezulu namandla aphezulu emodyuli yamandla enqwaba yokushaja kungenziwa ngokusebenzisa i-silicon carbide kumojula yamandla enqwaba yokushaja, ukuze kuthuthukiswe isivinini sokushaja nokunciphisa izindleko zokushaja.

3. Isikhungo esikhulu sedatha, i-Industrial Internet -- ukunikezwa kwamandla kweseva.
Isiphakeli samandla eseva yilabhulali yamandla eseva.Iseva inikeza amandla okuqinisekisa ukusebenza okuvamile kwesistimu yeseva.Ukusetshenziswa kwezingxenye zamandla e-silicon carbide kugesi weseva kungathuthukisa ukuminyana kwamandla nokusebenza kahle kwesiphakeli samandla, kunciphise umthamo wesikhungo sedatha sisonke, kunciphise izindleko zokwakhiwa kwesikhungo sedatha, futhi kuzuze imvelo ephakeme. ukusebenza kahle.

4. I-Uhv - Ukusetshenziswa kwama-flexible transmission DC circuit breakers.

5. Isitimela esinesivinini esikhulu esihamba phakathi kwamadolobha kanye nokuhamba kwesitimela esihamba phakathi kwamadolobha -- iziguquli zokuhamba, iziguquli zikagesi ezisebenza ngogesi, iziguquli ezisizayo, izinsiza zamandla ezisizayo.

Ipharamitha

Izakhiwo iyunithi I-silicon I-SiC I-GaN
Ububanzi be-bandgap eV 1.12 3.26 3.41
Inkambu yokwahlukanisa MV/cm 0.23 2.2 3.3
Ukuhamba kwe-electron cm^2/Vs 1400 950 1500
I-Drift valocity 10^7 cm/s 1 2.7 2.5
I-Thermal conductivity W/cmK 1.5 3.8 1.3

Umdwebo onemininingwane

2 intshi Silicon Carbide Wafers 6H noma 4H N-type4
2 intshi Silicon Carbide Wafers 6H noma 4H N-type5
2 intshi Silicon Carbide Wafers 6H noma 4H N-type6
2 intshi Silicon Carbide Wafers 6H noma 4H N-type7
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