I-HPSI SiC Wafer ≥90% Ibanga Lokukhanya Lokudlulisa Ama-AI/AR

Incazelo emfushane:

Ipharamitha	Ibanga	I-Substrate engu-4-intshi	I-Substrate engu-6-intshi
Ububanzi	Ibanga lika-Z / Ibanga lika-D	99.5 mm – 100.0 mm	149.5 mm – 150.0 mm
Uhlobo lwe-poly	Ibanga lika-Z / Ibanga lika-D	4H	4H
Ubukhulu	Ibanga lika-Z	500 μm ± 15 μm	500 μm ± 15 μm
Ubukhulu	Ibanga lika-D	500 μm ± 25 μm	500 μm ± 25 μm
Ukuqondiswa kwe-Wafer	Ibanga lika-Z / Ibanga lika-D	Ku-axis: <0001> ± 0.5°	Ku-axis: <0001> ± 0.5°
Ubuningi be-Micropipe	Ibanga lika-Z	≤ 1 cm²	≤ 1 cm²
Ubuningi be-Micropipe	Ibanga lika-D	≤ 15 cm²	≤ 15 cm²
Ukumelana	Ibanga lika-Z	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Ukumelana	Ibanga lika-D	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm

Sithumelele i-imeyili

Izici

Isingeniso Esiyinhloko: Indima Yama-HPSI SiC Wafers Ezingilazini ze-AI/AR

Ama-wafer e-Silicon Carbide e-HPSI (High-Purity Semi-Insulating) angama-wafer akhethekile abonakala ngokumelana okuphezulu (>10⁹ Ω·cm) kanye nobuningi obuphansi kakhulu bokukhubazeka. Ezingilazini ze-AI/AR, asebenza ngokuyinhloko njengezinto eziyisisekelo zamalensi e-optical waveguide ahlukanisayo, abhekana nezinkinga ezihlobene nezinto zendabuko ze-optical ngokwezinto ezincane nezikhanyayo, ukushabalaliswa kokushisa, kanye nokusebenza kwe-optical. Isibonelo, izibuko ze-AR ezisebenzisa amalensi e-SiC waveguide zingafinyelela insimu yokubuka ebanzi kakhulu (i-FOV) engu-70°–80°, ngenkathi kunciphisa ukujiya kwesendlalelo selensi eyodwa kube ngu-0.55mm kuphela kanye nesisindo sibe ngu-2.7g kuphela, okuthuthukisa kakhulu induduzo yokugqokwa kanye nokucwiliswa okubonakalayo.

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Izici Eziyinhloko: Indlela Izinto ze-SiC Ezinika Ngayo Amandla Umklamo Wezingilazi ze-AI/AR

Inkomba Ephakeme Yokubukeza kanye Nokwenza Kahle Ukusebenza Kokubona

Inkomba yokukhanya ye-SiC (2.6–2.7) iphakeme cishe ngo-50% kuneyengilazi yendabuko (1.8–2.0). Lokhu kuvumela izakhiwo zokuqondisa amagagasi ezincane nezisebenza kahle, okwandisa kakhulu i-FOV. Inkomba yokukhanya ephezulu iyasiza futhi ekucindezeleni "umphumela wothingo" ovamile kuma-waveguide ahlukanisayo, okuthuthukisa ubumsulwa besithombe.

Amandla Okuphatha Okushisayo Angavamile

Njengoba i-thermal conductivity ifinyelela ku-490 W/m·K (esondele kweyethusi), i-SiC ingasusa ngokushesha ukushisa okukhiqizwa amamojula okubonisa e-Micro-LED. Lokhu kuvimbela ukwehla kokusebenza noma ukuguga kwedivayisi ngenxa yokushisa okuphezulu, okuqinisekisa impilo yebhethri ende kanye nokuqina okuphezulu.

Amandla Okusebenza Nokuqina Kwemishini

I-SiC inobulukhuni buka-Mohs obungu-9.5 (obulandela idayimane kuphela), inikeza ukumelana nokuklwebheka okumangalisayo, okwenza ifaneleke kakhulu ezingilazini ezisetshenziswa njalo. Ubulukhuni bayo bomphezulu bungalawulwa ku-Ra < 0.5 nm, ukuqinisekisa ukulahleka okuncane kanye nokudluliselwa kokukhanya okufanayo kakhulu kuma-waveguides.

Ukuhambisana Kwempahla Kagesi

Ukumelana kwe-HPSI SiC (>10⁹ Ω·cm) kusiza ukuvimbela ukuphazamiseka kwesignali. Kungasebenza futhi njengento yedivayisi yamandla esebenza kahle, kuthuthukisa amamojula okuphatha amandla ezingilazini ze-AR.

Iziqondiso Zokusebenza Eziyinhloko

Izingxenye Eziyinhloko Zokukhanya ze-AI/AR Glasses

Amalensi e-Diffractive Waveguide: Ama-substrate e-SiC asetshenziselwa ukudala ama-waveguide e-optical aqine kakhulu asekela i-FOV enkulu kanye nokususwa komphumela we-rainbow.
Amapuleti Nama-Prism Efasiteleni: Ngokusika nokupholisha okwenziwe ngokwezifiso, i-SiC ingacutshungulwa ibe amafasitela avikelayo noma ama-prism e-optical ezibuko ze-AR, okuthuthukisa ukuhanjiswa kokukhanya kanye nokumelana nokuguguleka.

Izicelo Ezandisiwe Kwezinye Izinkambu

Amandla kagesi: Asetshenziswa ezimweni ezivame kakhulu nezinamandla aphezulu njengeziguquli zezimoto ezintsha zamandla kanye nezilawuli zezimoto zezimboni.
I-Quantum Optics: Isebenza njengomsingathi wezikhungo zombala, esetshenziswa kuma-substrates okuxhumana kwe-quantum kanye namadivayisi okuzwa.

Ukuqhathanisa Imininingwane Ye-HPSI SiC Substrate Engama-intshi angu-4 kanye nama-intshi angu-6

Ipharamitha	Ibanga	I-Substrate engu-4-intshi	I-Substrate engu-6-intshi
Ububanzi	Ibanga lika-Z / Ibanga lika-D	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
Uhlobo lwe-poly	Ibanga lika-Z / Ibanga lika-D	4H	4H
Ubukhulu	Ibanga lika-Z	500 μm ± 15 μm	500 μm ± 15 μm
Ubukhulu	Ibanga lika-D	500 μm ± 25 μm	500 μm ± 25 μm
Ukuqondiswa kwe-Wafer	Ibanga lika-Z / Ibanga lika-D	Ku-axis: <0001> ± 0.5°	Ku-axis: <0001> ± 0.5°
Ubuningi be-Micropipe	Ibanga lika-Z	≤ 1 cm²	≤ 1 cm²
Ubuningi be-Micropipe	Ibanga lika-D	≤ 15 cm²	≤ 15 cm²
Ukumelana	Ibanga lika-Z	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Ukumelana	Ibanga lika-D	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm
Ukuqondiswa Okuyisisekelo Okuyisicaba	Ibanga lika-Z / Ibanga lika-D	(10-10) ± 5.0°	(10-10) ± 5.0°
Ubude obuyisisekelo obuyisicaba	Ibanga lika-Z / Ibanga lika-D	32.5 mm ± 2.0 mm	I-Notch
Ubude Besibili Besicaba	Ibanga lika-Z / Ibanga lika-D	18.0 mm ± 2.0 mm	-
Ukukhishwa Kwemiphetho	Ibanga lika-Z / Ibanga lika-D	3 mm	3 mm
I-LTV / TTV / Umnsalo / I-Warp	Ibanga lika-Z	≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm	≤ 2.5 μm / ≤ 6 μm / ≤ 25 μm / ≤ 35 μm
I-LTV / TTV / Umnsalo / I-Warp	Ibanga lika-D	≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm	≤ 5 μm / ≤ 15 μm / ≤ 40 μm / ≤ 80 μm
Ubulukhuni	Ibanga lika-Z	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm
Ubulukhuni	Ibanga lika-D	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	I-Polish Ra ≤ 1 nm / CMP Ra ≤ 0.5 nm
Ama-Edge Cracks	Ibanga lika-D	Indawo ehlanganisiwe ≤ 0.1%	Ubude obuhlanganisiwe ≤ 20 mm, obubodwa ≤ 2 mm
Izindawo ze-Polytype	Ibanga lika-D	Indawo ehlanganisiwe ≤ 0.3%	Indawo eqongelelekayo ≤ 3%
Ukufakwa kwe-Visual Carbon	Ibanga lika-Z	Indawo eqongelelekayo ≤ 0.05%	Indawo eqongelelekayo ≤ 0.05%
Ukufakwa kwe-Visual Carbon	Ibanga lika-D	Indawo ehlanganisiwe ≤ 0.3%	Indawo eqongelelekayo ≤ 3%
Ukuklwebheka Okungaphezulu Kwe-Silicon	Ibanga lika-D	5 kuvunyelwe, ngayinye ≤1mm	Ubude obuhlanganisiwe ≤ 1 x ububanzi
Ama-Edge Chips	Ibanga lika-Z	Akukho okuvunyelwe (ububanzi nokujula ≥0.2mm)	Akukho okuvunyelwe (ububanzi nokujula ≥0.2mm)
Ama-Edge Chips	Ibanga lika-D	7 kuvunyelwe, ngayinye ≤1mm	7 kuvunyelwe, ngayinye ≤1mm
Ukuhlukaniswa Kwesikulufa Sokusonta	Ibanga lika-Z	-	≤ 500 cm²
Ukupakishwa	Ibanga lika-Z / Ibanga lika-D	Ikhasethi Yesitsha Esinezitsha Eziningi Noma Isitsha Esilodwa Sesitsha Esinezitsha Ezincane	Ikhasethi Yesitsha Esinezitsha Eziningi Noma Isitsha Esilodwa Sesitsha Esinezitsha Ezincane

Izinsizakalo ze-XKH: Amandla Okukhiqiza Nokwenza Ngokwezifiso Ahlanganisiwe

Inkampani ye-XKH inamakhono okuhlanganisa aqondile kusukela ezintweni zokusetshenziswa kuya kuma-wafer aqediwe, amboza lonke uchungechunge lokukhula kwe-substrate ye-SiC, ukusika, ukupholisha, kanye nokucutshungulwa ngokwezifiso. Izinzuzo ezibalulekile zesevisi zifaka:

Ukuhlukahluka Kwezinto Ezibonakalayo:Singahlinzeka ngezinhlobo ezahlukene ze-wafer njengohlobo lwe-4H-N, uhlobo lwe-4H-HPSI, uhlobo lwe-4H/6H-P, kanye nohlobo lwe-3C-N. Ukumelana, ukujiya, kanye nokuma kungalungiswa ngokuya ngezimfuneko.
.Ukwenza Ngokwezifiso Usayizi Oguquguqukayo:Sisekela ukucutshungulwa kwe-wafer kusukela kububanzi obungu-2 intshi kuya ku-12 intshi, futhi singacubungula nezakhiwo ezikhethekile njengezingcezu zesikwele (isb., 5x5mm, 10x10mm) kanye nama-prism angajwayelekile.
Ukulawula Ukuchaneka Kwezinga Lokukhanya:I-Wafer Total Thickness Variation (TTV) ingagcinwa ku-<1μm, kanye nokungaguquguquki kwendawo ku-Ra < 0.3 nm, okuhlangabezana nezidingo ze-nano-level flatness zamadivayisi e-waveguide.
Impendulo Esheshayo Yemakethe:Imodeli yebhizinisi ehlanganisiwe iqinisekisa ukuguquka okuphumelelayo kusuka ku-R&D kuya ekukhiqizweni okukhulu, okusekela konke kusukela ekuqinisekisweni kweqembu elincane kuya ekuthunyelweni okukhulu (isikhathi sokuhola ngokuvamile siyizinsuku ezingu-15-40).

Imibuzo Evame Ukubuzwa ye-HPSI SiC Wafer

Umbuzo 1: Kungani i-HPSI SiC ibhekwa njengento efanelekile yamalensi e-AR waveguide?
A1: Inkomba yayo ephezulu yokubuka (2.6–2.7) ivumela izakhiwo ezincane nezisebenza kahle zamagagasi ezisekela insimu enkulu yokubuka (isb., 70°–80°) ngenkathi kususwa "umphumela wothingo".
Umbuzo 2: I-HPSI SiC ithuthukisa kanjani ukuphathwa kokushisa ezingilazini ze-AI/AR?
A2: Njengoba ikwazi ukudlulisa ukushisa kufika ku-490 W/m·K (eseduze nethusi), isusa ukushisa kahle ezingxenyeni ezifana nama-Micro-LED, iqinisekisa ukusebenza okuzinzile kanye nokuphila isikhathi eside kwedivayisi.
Q3: Yiziphi izinzuzo zokuqina ezinikezwa yi-HPSI SiC ngezibuko ezigqokwayo?
A3: Ubulukhuni bayo obungavamile (Mohs 9.5) bunikeza ukumelana okuhle kokuklwebheka, okwenza iqine kakhulu ukusetshenziswa nsuku zonke ezingilazini ze-AR ezisezingeni labathengi.