4H-N/6H-N SiC Wafer Reasearch ukukhiqizwa kwe-Dummy grade Dia150mm I-Silicon carbide substrate

Incazelo emfushane:

Singahlinzeka ngokushisa okuphezulu kwe-superconducting encane yefilimu substrate, amafilimu amancane kazibuthe kanye ne-ferroelectric encane yefilimu substrate, i-semiconductor crystal, i-crystal optical, i-laser crystal materials, ngesikhathi esifanayo ihlinzeka ngokuma, ukusika i-crystal, ukugaya, ukupholisha kanye nezinye izinsizakalo zokucubungula. Ama-substrates ethu e-SiC avela e-Tankeblue Factory e-China.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

6 intshi ububanzi be-silicon carbide (SiC) ukucaciswa kwe-substrate

Ibanga	Zero MPD	Ukukhiqiza	IBanga Lokucwaninga	Dummy Grade
Ububanzi	150.0mm±0.25mm
Ubukhulu	4H-N	350um±25um
	4H-SI	500um±25um
I-Wafer Orientation	Ku-eksisi :<0001>±0.5° ku-4H-SI Ku-axis evaliwe : 4.0° ukuya ku-<1120>±0.5° ku-4H-N
Ifulethi eliyisisekelo	{10-10}±5.0°
Ubude Befulethi obuyisisekelo	47.5mm±2.5mm
Ukukhishwa eceleni	3mm
TTV/Bow/Warp	≤15um/≤40um/≤60um
I-Micropipe Density	≤1cm-2	≤5cm-2	≤15cm-2	≤50cm-2
Ukumelana 4H-N 4H-SI	0.015~0.028Ω!cm
	≥1E5Ω!cm
Ubulukhuni	I-Polish Ra ≤1nm CMP Ra≤0.5nm
#Ukuqhekeka ngokukhanya okukhulu kakhulu	Lutho		1 okuvunyelwe,≤2mm	Ubude obuhlanganisiwe ≤10mm, ubude obubodwa≤2mm
*Amapuleti e-Hex ngokukhanya okuphezulu kakhulu	Indawo eqoqiwe ≤1%		Indawo eqoqiwe ≤ 2%	Indawo eqoqiwe ≤ 5%
*Izindawo ze-Polytype ngokukhanya okukhulu kakhulu	Lutho		Indawo eqoqiwe ≤ 2%	Indawo eqoqiwe ≤ 5%
*&Iklwejwa ngokukhanya okukhulu	3 imihuzuko ukuya ku-1 x wafer ububanzi ubude obukhulayo		5 ukuklwebheka ukuya ku-1 x wafer ubude bobude obukhulayo	5 iziklwebhile ukuya ku-1 x wafer ububanzi ubude obukhulayo
I-Edge chip	Lutho		3 kuvunyelwe,≤0.5mm ngakunye	5 okuvunyelwe,≤1mm ngakunye
Ukungcoliswa ukukhanya okunamandla aphezulu	Lutho

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Isevisi

Siyaziqhenya ngokuba nabasebenzi bobunjiniyela bokuthengisa abanolwazi olungaphezu kweminyaka emi-5 embonini ye-semiconductor. Baqeqeshelwe ukuphendula imibuzo yobuchwepheshe kanye nokunikeza izingcaphuno ezifika ngesikhathi zezidingo zakho.

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