Ama-Silicon Carbide Wafers angamasentimitha angu-3 angenawo umswakama (i-HPSl)

Isithombe Esifakiwe: Ama-Silicon Carbide Wafers angu-3 intshi acwengekile (angafakwanga) angama-semi-insulating Sic Substrates (HPSl)

Incazelo emfushane:

I-wafer ye-High Purity Semi-Insulating (HPSI) Silicon Carbide (SiC) engamasentimitha angu-3 iyi-substrate yezinga eliphezulu elungiselelwe izinhlelo zokusebenza zamandla aphezulu, imvamisa ephezulu, kanye ne-optoelectronic. Yakhiwe ngezinto ze-4H-SiC ezingavulwanga, ezihlanzekile kakhulu, lawa ma-wafer abonisa ukuhanjiswa kokushisa okuhle kakhulu, igebe elikhulu, kanye nezakhiwo ezihlukile zokuvimbela ukushisa, okwenza kube yinto ebalulekile ekuthuthukisweni kwedivayisi ethuthukisiwe. Ngobuqotho besakhiwo obuphezulu kanye nekhwalithi ephezulu, ama-substrate e-HPSI SiC asebenza njengesisekelo sobuchwepheshe besizukulwane esilandelayo embonini yamandla kagesi, ezokuxhumana, kanye nezindiza, esekela ukusungula izinto ezintsha emikhakheni eyahlukahlukene.

Sithumelele i-imeyili

Izici

Izakhiwo

1. Izakhiwo Ezibonakalayo Nezakhiwe
●Uhlobo Lwezinto: Ukuhlanzeka Okuphezulu (Okungafakwanga idophi) I-Silicon Carbide (SiC)
●Ububanzi: amayintshi angu-3 (76.2 mm)
●Ubukhulu: 0.33-0.5 mm, ingenziwa ngokwezifiso ngokusekelwe ezidingweni zohlelo lokusebenza.
●Isakhiwo sekristalu: I-polytype engu-4H-SiC ene-lattice enezinhlangothi eziyisithupha, eyaziwa ngokuhamba okuphezulu kwama-electron kanye nokuqina kokushisa.
●Ukujwayela:
oStandard: [0001] (C-plane), ifaneleka ezinhlelweni eziningi ezahlukene.
oOngakukhetha: I-Off-axis (4° noma 8° ukuthambekela) ukuze kukhule kahle i-epitaxial yezendlalelo zedivayisi.
●Ubucaba: Ukwehluka kobukhulu obuphelele (i-TTV) ●Ikhwalithi Yomphezulu:
o Kupholishwe kwaba yi-o Ukuminyana okunesici esiphansi (<10/cm² ukuminyana kwepayipi elincane). 2. Izakhiwo Zikagesi ●Ukumelana: >109^99 Ω·cm, kugcinwa ngokususa izinto ezisetshenziswa ngamabomu.
●Amandla E-Dielectric: Ukuqina kwamandla kagesi aphezulu kanye nokulahlekelwa okuncane kwe-dielectric, okulungele ukusetshenziswa kwamandla aphezulu.
●Ukusebenza Kokushisa: 3.5-4.9 W/cm·K, okuvumela ukushabalaliswa kokushisa okuphumelelayo kumadivayisi asebenza kahle kakhulu.

3. Izakhiwo Zokushisa Nezomshini
●Isikhala Esibanzi Sebhendi: 3.26 eV, esekela ukusebenza ngaphansi kwe-voltage ephezulu, izinga lokushisa eliphezulu, kanye nezimo zemisebe ephezulu.
●Ukuqina: Isikali se-Mohs 9, siqinisekisa ukuqina ngokumelene nokuguguleka komshini ngesikhathi sokucubungula.
●Isilinganiso Sokwanda Kokushisa: 4.2×10−6/K4.2 \times 10^{-6}/\text{K}4.2×10−6/K, okuqinisekisa ukuzinza kobukhulu ngaphansi kokushintsha kwezinga lokushisa.

Ipharamitha	Ibanga Lokukhiqiza	Ibanga Locwaningo	Ibanga Eliyimbumbulu	Iyunithi
Ibanga	Ibanga Lokukhiqiza	Ibanga Locwaningo	Ibanga Eliyimbumbulu
Ububanzi	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Ubukhulu	500 ± 25	500 ± 25	500 ± 25	µm
Ukuqondiswa kwe-Wafer	I-On-axis: <0001> ± 0.5°	I-On-axis: <0001> ± 2.0°	I-On-axis: <0001> ± 2.0°	izinga
Ubuningi be-Micropipe (MPD)	≤ 1	≤ 5	≤ 10	cm−2^-2−2
Ukumelana Nogesi	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
I-Dopant	Kuhlehlisiwe	Kuhlehlisiwe	Kuhlehlisiwe
Ukuqondiswa Okuyisisekelo Okuyisicaba	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	izinga
Ubude Obuphansi Obuyinhloko	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Ubude Besibili Obuyisicaba	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Ukuqondiswa Kwesibili Okuyisicaba	90° CW kusukela efulethini eliyinhloko ± 5.0°	90° CW kusukela efulethini eliyinhloko ± 5.0°	90° CW kusukela efulethini eliyinhloko ± 5.0°	izinga
Ukukhishwa Komphetho	3	3	3	mm
I-LTV/TTV/Umnsalo/I-Warp	3 / 10 / ±30 / 40	3 / 10 / ±30 / 40	5 / 15 / ±40 / 45	µm
Ubulukhuni Bomphezulu	Ubuso obufanayo: CMP, ubuso obufanayo: Bupholishiwe	Ubuso obufanayo: CMP, ubuso obufanayo: Bupholishiwe	Ubuso obufanayo: CMP, ubuso obufanayo: Bupholishiwe
Imifantu (Ukukhanya Okunamandla Aphezulu)	Akukho	Akukho	Akukho
Amapuleti e-Hex (Ukukhanya Okunamandla Okuphezulu)	Akukho	Akukho	Indawo ehlanganisiwe 10%	%
Izindawo ze-Polytype (Ukukhanya Okunamandla Aphezulu)	Indawo ehlanganisiwe 5%	Indawo ehlanganisiwe 20%	Indawo ehlanganisiwe 30%	%
Ukuklwebheka (Ukukhanya Okunamandla Aphezulu)	≤ imihuzuko emi-5, ubude obuhlanganisiwe ≤ 150	≤ imihuzuko eyi-10, ubude obuhlanganisiwe ≤ 200	≤ imihuzuko eyi-10, ubude obuhlanganisiwe ≤ 200	mm
Ukuqhekeka Komphetho	Akukho ≥ ububanzi/ukujula okungu-0.5 mm	2 kuvunyelwe ≤ 1 mm ububanzi/ukujula	5 kuvunyelwe ≤ ububanzi/ukujula okungu-5 mm	mm
Ukungcoliswa Komphezulu	Akukho	Akukho	Akukho

Izicelo

1. Amandla kagesi
Igebe elibanzi kanye nokushisa okuphezulu kwe-HPSI SiC substrates kuzenza zilungele amadivayisi kagesi asebenza ezimweni ezimbi kakhulu, njenge:
●Amadivayisi Anamandla Aphezulu: Kufaka phakathi ama-MOSFET, ama-IGBT, kanye nama-Schottky Barrier Diodes (ama-SBD) ukuze kuguqulwe amandla ngendlela ephumelelayo.
●Izinhlelo Zamandla Avuselelekayo: Njengeziguquli zelanga kanye nezilawuli ze-wind turbine.
●Izimoto Zikagesi (ama-EV): Zisetshenziswa kuma-inverter, amashaja, kanye nezinhlelo ze-powertrain ukuthuthukisa ukusebenza kahle nokunciphisa usayizi.

2. Izicelo ze-RF kanye ne-Microwave
Ukumelana okuphezulu kanye nokulahlekelwa okuphansi kwe-dielectric kwama-wafer e-HPSI kubalulekile ezinhlelweni ze-radio-frequency (RF) kanye ne-microwave, okuhlanganisa:
●Ingqalasizinda Yezokuxhumana: Iziteshi eziyisisekelo zamanethiwekhi e-5G kanye nokuxhumana kwesathelayithi.
●Indawo Yomoya Nokuzivikela: Izinhlelo ze-radar, ama-antenna ahlelwe ngokwezigaba, kanye nezingxenye ze-avionics.

3. Optoelectronics
Ukucaca kanye negebe elibanzi le-4H-SiC kwenza ukusetshenziswa kwayo kumadivayisi e-optoelectronic, njenge:
●Ama-UV Photodetector: Okuqapha indawo kanye nokuhlola ezokwelapha.
●Ama-LED Anamandla Aphezulu: Asekela izinhlelo zokukhanyisa eziqinile.
●Ama-Diode e-Laser: Ezokusetshenziswa kwezimboni kanye nezokwelapha.

4. Ucwaningo Nentuthuko
Ama-substrate e-HPSI SiC asetshenziswa kabanzi kuma-lab e-R&D ezemfundo kanye nezimboni ukuhlola izakhiwo zezinto ezithuthukisiwe kanye nokwakhiwa kwamadivayisi, okuhlanganisa:
●Ukukhula Kwezingqimba Ze-Epitaxial: Izifundo zokunciphisa amaphutha kanye nokwenza ngcono izingqimba.
●Izifundo Zokuhamba Komthwali: Uphenyo lokuthuthwa kwama-electron kanye nemigodi ezintweni ezihlanzekile kakhulu.
●Ukwenza amaphrothokholi: Ukuthuthukiswa kokuqala kwamadivayisi amasha kanye namasekethe.

Izinzuzo

Ikhwalithi Ephakeme:
Ukuhlanzeka okuphezulu kanye nobuningi obuphansi beziphambeko kunikeza ipulatifomu ethembekile yezinhlelo zokusebenza ezithuthukisiwe.

Ukuzinza Kokushisa:
Izakhiwo ezinhle kakhulu zokushabalalisa ukushisa zivumela amadivayisi ukuthi asebenze kahle ngaphansi kwamandla aphezulu kanye nezimo zokushisa.

Ukuhambisana Okubanzi:
Izindlela ezitholakalayo zokuqondisa kanye nezinketho zobukhulu ezenziwe ngokwezifiso ziqinisekisa ukuzivumelanisa nezimfuneko ezahlukahlukene zedivayisi.

Ukuqina:
Ubulukhuni obungavamile kanye nokuqina kwesakhiwo kunciphisa ukuguguleka kanye nokuguquguquka ngesikhathi sokucubungula nokusebenza.

Ukuguquguquka:
Ifanelekela izimboni ezahlukahlukene, kusukela emandleni avuselelekayo kuya ezindiza kanye nezokuxhumana.

Isiphetho

I-wafer ye-Silicon Carbide Engange-High Purity Semi-Insulating engamasentimitha angu-3 imelela ubuchwepheshe obuphezulu be-substrate bamadivayisi anamandla aphezulu, amaza aphezulu, kanye nama-optoelectronic. Ukuhlanganiswa kwayo kwezakhiwo ezinhle kakhulu zokushisa, zikagesi, kanye nezama-mechanical kuqinisekisa ukusebenza okuthembekile ezindaweni eziyinselele. Kusukela ku-electronics yamandla kanye nezinhlelo ze-RF kuya ku-optoelectronics kanye ne-R&D ethuthukisiwe, lawa ma-substrate e-HPSI ahlinzeka ngesisekelo sezinto ezintsha zakusasa.
Ukuze uthole ulwazi olwengeziwe noma ukufaka i-oda, sicela usithinte. Ithimba lethu lobuchwepheshe liyatholakala ukukunikeza isiqondiso kanye nezinketho zokwenza ngokwezifiso ezifanela izidingo zakho.