3 inch High Purity (Angagudluliwe)I-Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl)

3 inch High Purity (Akugudluliwe)I-Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl) Isithombe Esifakiwe

Incazelo emfushane:

I-wafer engu-3-inch High Purity Semi-Insulating (HPSI) Silicon Carbide (SiC) iyi-premium-grade substrate elungiselelwe ukusetshenziswa kwamandla aphezulu, ama-high-frequency, kanye ne-optoelectronic. Akhiqizwe ngezinto ezingagudluziwe, ezihlanzeke kakhulu ze-4H-SiC, lawa mawafa abonisa ukuguquguquka okuhle kokushisayo, i-bandap ebanzi, kanye nezakhiwo ezihlukile zokuvikela i-semi-insulating, okuwenza abaluleke kakhulu ekuthuthukisweni kwedivayisi okuthuthukile. Ngobuqotho obuphakeme besakhiwo kanye nekhwalithi yendawo ephezulu, ama-substrates e-HPSI SiC asebenza njengesisekelo sobuchwepheshe besizukulwane esilandelayo kugesi wamandla, ezokuxhumana, kanye nezimboni ze-aerospace, ezisekela ukusungulwa emikhakheni ehlukahlukene.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izakhiwo

1. Izakhiwo zePhysical and Structural
● Uhlobo Lwezinto Ezibalulekile: Ukuhlanzeka Okuphezulu (Akususiwe) I-Silicon Carbide (SiC)
● Ububanzi: 3 amayintshi (76.2 mm)
● Ubukhulu: 0.33-0.5 mm, ukwenziwa ngendlela oyifisayo ngokusekelwe ezimfuneko zohlelo lokusebenza.
● I-Crystal Structure: I-4H-SiC i-polytype ene-hexagonal lattice, eyaziwa ngokuhamba okuphezulu kwe-electron kanye nokuzinza kwe-thermal.
●Umumo:
oStandard: [0001] (C-plane), ilungele uhla olubanzi lwezinhlelo zokusebenza.
Ongakukhetha: I-off-eksisi (4° noma 8° tilt) ukuze kuthuthukiswe ukukhula kwe-epitaxial kwezingqimba zedivayisi.
●Ukucaba: Ukuhlukahluka kokuqina okuphelele (TTV) ●Ikhwalithi yobuso:
o polished to oLow-defect density (<10/cm² ukuminyana kwamapayipi). 2. Izakhiwo Zikagesi ●Ukumelana: >109^99 Ω·cm, kugcinwa ukuqedwa kwama-dopant wamabomu.
● Amandla e-Dielectric: Ukubekezela kwe-voltage ephezulu nokulahlekelwa okuncane kwe-dielectric, ilungele izinhlelo zokusebenza zamandla aphezulu.
●I-Thermal Conductivity: 3.5-4.9 W/cm·K, inika amandla ukulahlwa kokushisa okusebenzayo kumadivayisi asebenza kahle kakhulu.

3. Izakhiwo ezishisayo nezemishini
● I-Wide Bandgap: 3.26 eV, ukusebenza okusekelayo ngaphansi kwamandla kagesi aphezulu, izinga lokushisa eliphezulu, nezimo zemisebe ephezulu.
● Ukuqina: Isikali se-Mohs 9, siqinisekisa ukuqina ngokumelene nokugqokwa komshini ngesikhathi sokucubungula.
● I-Thermal Expansion Coefficient: 4.2×10−6/K4.2 \izikhathi ezingu-10^{-6}/\text{K}4.2×10−6/K, iqinisekisa ukuzinza kwe-dimensional ngaphansi kokuhlukahluka kwezinga lokushisa.

Ipharamitha	Ibanga Lokukhiqiza	IBanga Lokucwaninga	Dummy Grade	Iyunithi
Ibanga	Ibanga Lokukhiqiza	IBanga Lokucwaninga	Dummy Grade
Ububanzi	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Ubukhulu	500 ± 25	500 ± 25	500 ± 25	µm
I-Wafer Orientation	Ku-eksisi: <0001> ± 0.5°	Ku-eksisi: <0001> ± 2.0°	Ku-eksisi: <0001> ± 2.0°	iziqu
I-Micropipe Density (MPD)	≤1	≤ 5	≤ 10	cm−2^-2−2
Ukungazweli Kagesi	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
I-Dopant	Kuhlehlisiwe	Kuhlehlisiwe	Kuhlehlisiwe
Isisekelo se-Flat Orientation	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	iziqu
Ubude Befulethi obuyisisekelo	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Ubude Befulethi besibili	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
I-Flat Orientation yesibili	90° CW kusukela efulethini lokuqala ± 5.0°	90° CW kusukela efulethini lokuqala ± 5.0°	90° CW kusukela efulethini lokuqala ± 5.0°	iziqu
Ukukhishwa komkhawulo	3	3	3	mm
LTV/TTV/Bow/Warp	3/10 / ±30/40	3/10 / ±30/40	5/15 / ±40/45	µm
Ukuqina Kobuso	Ubuso beSi: CMP, C-face: Bupholishiwe	Ubuso beSi: CMP, C-face: Bupholishiwe	Ubuso beSi: CMP, C-face: Bupholishiwe
Imifantu (High-Intensity Light)	Lutho	Lutho	Lutho
I-Hex Plates (Ukukhanya Okunamandla Kakhulu)	Lutho	Lutho	Indawo eqoqiwe 10%	%
Izindawo ze-Polytype (Ukukhanya Okunamandla Kakhulu)	Indawo ehlanganisiwe 5%	Indawo eqoqiwe 20%	Indawo eqoqiwe 30%	%
Ukuklwebheka (Ukukhanya Okumandla Kakhulu)	≤ 5 imihuzuko, ubude obukhulayo ≤ 150	≤ 10 imihuzuko, ubude obuningi ≤ 200	≤ 10 imihuzuko, ubude obuningi ≤ 200	mm
I-Edge Chipping	Lutho ≥ 0.5 mm ububanzi/ukushona	2 okuvunyelwe ≤ 1 mm ububanzi/ukushona	5 okuvunyelwe ≤ 5 mm ububanzi/ukushona	mm
Ukungcoliswa kobuso	Lutho	Lutho	Lutho

Izinhlelo zokusebenza

1. Amandla kagesi
I-bandgap ebanzi kanye ne-thermal conductivity ephezulu yama-substrates e-HPSI SiC awenza alungele amadivayisi kagesi asebenza ezimeni ezimbi kakhulu, njenge:
●Amadivayisi Anamandla Aphezulu: Kufaka ama-MOSFET, ama-IGBT, nama-Schottky Barrier Diode (SBDs) okuguqulwa kwamandla okusebenzayo.
● Amasistimu Amandla Avuselelekayo: Njengeziguquli zelanga nezilawuli ze-turbine yomoya.
●Izimoto zikagesi (EVs): Isetshenziswa kuma-inverter, amashaja, namasistimu e-powertrain ukuthuthukisa ukusebenza kahle nokunciphisa usayizi.

2. Izicelo ze-RF neMicrowave
Ukumelana okuphezulu nokulahleka kwe-dielectric okuphansi kwamawafa e-HPSI kubalulekile kuma-radio-frequency (RF) namasistimu we-microwave, okuhlanganisa:
● Ingqalasizinda Yezokuxhumana: Iziteshi eziyisisekelo zamanethiwekhi e-5G nokuxhumana ngesathelayithi.
● I-Aerospace kanye Nokuvikela: Amasistimu e-radar, ama-antenna ahlelwe ngezigaba, nezingxenye ze-avionics.

3. I-Optoelectronics
Ukungafihli kanye ne-bandgap ebanzi ye-4H-SiC kunika amandla ukusetshenziswa kwayo kumadivayisi we-optoelectronic, afana nalokhu:
● Ama-Photodetectors e-UV: Okokuqapha imvelo kanye nokuxilongwa kwezokwelapha.
●Ama-LED Anamandla Aphezulu: Asekela amasistimu okukhanyisa esimo esiqinile.
● Ama-Laser Diodes: Okwezicelo zezimboni nezokwelapha.

4. Ucwaningo Nentuthuko
Ama-substrates e-HPSI SiC asetshenziswa kabanzi kumalebhu e-R&D ezemfundo nawezimboni ukuze kuhlolwe izakhiwo zempahla ethuthukisiwe nokwakhiwa kwemishini, okuhlanganisa:
●I-Epitaxial Layer Growth: Izifundo zokunciphisa isici nokuthuthukisa isendlalelo.
●Izifundo Zokuhamba Kwenkampani Yenethiwekhi: Ukuphenywa kwezinto zokuhamba nge-electron nezimbobo ezintweni ezihlanzeke kakhulu.
● I-Prototyping: Ukuthuthukiswa kokuqala kwamadivayisi amanoveli namasekhethi.

Izinzuzo

Ikhwalithi Ephakeme:
Ukuhlanzeka okuphezulu kanye nokuminyana kwesici esiphansi kunikeza inkundla enokwethenjelwa yezinhlelo zokusebenza ezithuthukile.

Ukuqina Kokushisa:
Izakhiwo ezinhle kakhulu zokukhipha ukushisa zivumela amadivaysi ukuthi asebenze kahle ngaphansi kwamandla aphezulu kanye nezimo zokushisa.

Ukuhambisana Okubanzi:
Imikhombandlela etholakalayo nezinketho zokujiya ngokwezifiso ziqinisekisa ukuguquguquka kwezidingo zedivayisi ezahlukahlukene.

Ukuqina:
Ukuqina okungavamile nokuzinza kwesakhiwo kunciphisa ukuguga nokuguqulwa ngesikhathi sokucubungula nokusebenza.

Ukuhlukahluka:
Ifanele izimboni eziningi, kusukela kumandla avuselelekayo ukuya emkhathini kanye nezokuxhumana.

Isiphetho

Iwafa ye-High Purity Semi-Insulating Silicon Carbide engu-3-intshi imelela isiqongo sobuchwepheshe be-substrate kumadivayisi anamandla amakhulu, ama-high-frequency, nawe-optoelectronic. Inhlanganisela yayo yezinto ezinhle kakhulu ezishisayo, zikagesi, nemishini iqinisekisa ukusebenza okuthembekile ezindaweni eziyinselele. Kusukela kuma-electronics amandla namasistimu e-RF kuya ku-optoelectronics kanye ne-R&D ethuthukisiwe, lawa ma-substrates e-HPSI ahlinzeka ngesisekelo sezinto ezintsha zakusasa.
Ukuze uthole ulwazi olwengeziwe noma ukufaka i-oda, sicela usithinte. Ithimba lethu lobuchwepheshe liyatholakala ukuze likunikeze isiqondiso nezinketho zokwenza ngokwezifiso ezihambisana nezidingo zakho.