3inch 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Semi-insulting SiC wafers

3inch 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Amawafa e-SiC athukayo Semi-inhlamba Isithombe Esifakiwe

Incazelo emfushane:

Ikhwalithi ephezulu ye-crystal SiC wafer (i-Silicon Carbide) embonini ye-electronic kanye ne-optoelectronic.I-3inch SiC wafer iyisici sesizukulwane esilandelayo se-semiconductor, amawafa e-silicon-carbide angama-intshi angu-3-intshi.Ama-wafers enzelwe ukwenziwa kwamandla, i-RF kanye namadivayisi we-optoelectronics.

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Incazelo

3-inch 4H semi-insulated SiC (silicon carbide) substrate wafers izinto ezivame ukusetshenziswa semiconductor.I-4H ibonisa ukwakheka kwekristalu ye-tetrahexahedral.I-semi-insulation isho ukuthi i-substrate inezici eziphakeme zokumelana futhi ingahlukaniswa ngandlela thize nokugeleza kwamanje.

Ama-wafers anjalo e-substrate anezici ezilandelayo: ukushisa okuphezulu kwe-thermal, ukulahlekelwa kwe-conduction ephansi, ukumelana okuhle kakhulu kwezinga lokushisa eliphezulu, nokuzinza okuhle kakhulu kwemishini namakhemikhali.Ngenxa yokuthi i-silicon carbide inegebe elibanzi lamandla futhi ingamelana namazinga okushisa aphezulu kanye nezimo zensimu kagesi, amawafa angama-4H-SiC asetshenziselwa kakhulu amandla kagesi kanye namadivayisi omsakazo (RF).

Izinhlelo zokusebenza eziyinhloko ze-4H-SiC semi-insulated wafers zifaka:

I-1--Power electronics: Ama-wafers we-4H-SiC angasetshenziswa ukwenza amadivaysi okushintsha amandla afana nama-MOSFET (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors) kanye nama-Schottky diode.Lawa madivayisi ane-conduction ephansi nokulahlekelwa kokushintsha ku-voltage ephezulu kanye nezimo zokushisa okuphezulu futhi anikezela ukusebenza kahle okuphezulu nokuthembeka.

I-2--Radio Frequency (RF) Amadivayisi: Amawafa angama-4H-SiC afakwe kancane angasetshenziselwa ukwakha amandla aphezulu, izikhulisamandla ze-RF eziyimvamisa ephezulu, izihlungi ze-chip, izihlungi, namanye amadivaysi.I-Silicon carbide inokusebenza okungcono kwe-high-frequency kanye nokuzinza kokushisa ngenxa yezinga layo elikhulu le-electron saturation drift kanye ne-thermal conductivity ephakeme.

3--Amadivayisi we-Optoelectronic: Amawafa angama-4H-SiC afakwe kancane angasetshenziswa ukwenza ama-laser diode anamandla amakhulu, izithonjana zokukhanya kwe-UV kanye namasekethe ahlanganisiwe we-optoelectronic.

Ngokuya ngokuqondisa kwemakethe, isidingo samawafa angama-4H-SiC afakwe kancane siyakhula ngezinkambu ezikhulayo zamandla kagesi, i-RF kanye ne-optoelectronics.Lokhu kungenxa yokuthi i-silicon carbide inezinhlobonhlobo zezicelo, okuhlanganisa ukusebenza kahle kwamandla, izimoto zikagesi, amandla avuselelekayo kanye nokuxhumana.Ngokuzayo, imakethe ye-4H-SiC semi-insulated wafers isalokhu ithembisa kakhulu futhi kulindeleke ukuthi ithathe isikhundla sezinto ezijwayelekile ze-silicon ekusetshenzisweni okuhlukahlukene.