I-substrate
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I-2inch Silicon Carbide Wafer 6H-N Uhlobo Lwebanga Le-Prime Ibanga Ucwaningo Ibanga Le-Dummy Ibanga 330μm 430μm Ukuqina
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I-2inch silicon carbide substrate 6H-N enezinhlangothi ezimbili ezipholishiwe ububanzi 50.8mm ibanga locwaningo lwebanga lokukhiqiza
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p-uhlobo 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Ziro MPD
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I-SiC substrate P-type 4H/6H-P 3C-N 4inch enogqinsi lwama-350um Ibanga Lokukhiqiza Ibanga leDummy
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Ibanga leDummy Grade
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Uhlobo lwe-P-SiC wafer 4H/6H-P 3C-N 6inch ukujiya okungu-350 μm nge-Primary Flat Orientation
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Inqubo ye-TVG ku-quartz sapphire BF33 wafer I-wafer yengilazi ipunching
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I-Single Crystal Silicon Wafer Si Substrate Uhlobo lwe-N/P Ongakukhetha lwe-Silicon Carbide Wafer
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I-N-Type SiC Composite Substrates Dia6inch Ikhwalithi ephezulu ye-monocrystaline ne-substrate yekhwalithi ephansi
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I-Semi-Insulating SiC ku-Si Composite Substrates
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I-Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
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I-Synthetic Sapphire boule Monocrystal Sapphire Blank Diameter kanye nogqinsi kungenziwa ngokwezifiso