I-substrate
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I-substrate ye-SiC 3inch 350um ubukhulu be-HPSI Uhlobo lwe-Prime Grade Ibanga eliyi-dummy
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I-Silicon Carbide SiC Ingot 6inch N uhlobo Dummy/prime grade thickness can ba eyenziwe ngokwezifiso
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I-Silicon Carbide engu-4H-SiC engu-6 inches, i-Dummy Grade
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Uhlobo lwe-SiC Ingot 4H Dia 4inch 6inch Ubukhulu 5-10mm Ucwaningo / Ibanga Eliyindilinga
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I-sapphire engu-6 intshi i-Boule Sapphire engenalutho ikristalu elilodwa i-Al2O3 99.999%
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I-Sic Substrate Silicon Carbide Wafer 4H-N Uhlobo Lokuqina Okuphezulu Ukumelana Nokugqwala Ibanga Eliphezulu Lokupholisha
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I-Wafer ye-Silicon Carbide engu-2 intshi engu-6H-N Uhlobo lwe-Prime Grade Research Grade Dummy Grade engu-330μm engu-430μm Ubukhulu
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I-substrate ye-silicon carbide engu-2 intshi engu-6H-N ububanzi obuphindwe kabili obucwebezelayo obungu-50.8mm ibanga lokucwaninga lebanga lokukhiqiza
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uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD
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I-substrate ye-SiC uhlobo lwe-P 4H/6H-P 3C-N ubukhulu obuyi-4inch obuyi-350um Ibanga lokukhiqiza Ibanga eliyi-dummy
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I-wafer ye-SiC engu-4H/6H-P engu-6inch grade Zero MPD grade Production Grade Dummy Grade
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I-wafer ye-SiC yohlobo lwe-P engu-4H/6H-P 3C-N ubukhulu obuyi-6inch obungu-350 μm obune-Primieration Flat Eyinhloko