I-Wafer ye-Silicon Carbide engu-2 intshi engu-6H-N Uhlobo lwe-Prime Grade Research Grade Dummy Grade engu-330μm engu-430μm Ubukhulu

Incazelo emfushane:

Kunezinhlobo eziningi ezahlukene ze-silicon carbide kanti i-6H silicon carbide ingenye yama-polymorph acishe abe ngu-200. I-6H silicon carbide iyinguquko evame kakhulu yama-silicon carbide ngenxa yezithakazelo zezentengiselwano. Ama-wafer e-6H silicon carbide abaluleke kakhulu. Angasetshenziswa njenge-semiconductors. Isetshenziswa kabanzi kumathuluzi okuklwebha nawokusika njengokusika amadiski ngenxa yokuqina kwayo kanye nezindleko eziphansi zezinto zokwakha. Isetshenziswa ezivikelweni zomzimba ezihlanganisiwe zanamuhla kanye namavesti avikela izinhlamvu. Isetshenziswa futhi embonini yezimoto lapho isetshenziswa khona ukwenza amadiski amabhuleki. Ezisetshenzisweni ezinkulu ze-foundry, isetshenziselwa ukubamba izinsimbi ezincibilikisayo ezitsheni ezivuthayo. Ukusetshenziswa kwayo ezisetshenzisweni zikagesi neze-elekthronikhi kwaziwa kakhulu kangangokuthi akudingi mpikiswano. Ngaphezu kwalokho, isetshenziswa kumadivayisi kagesi anamandla, ama-LED, izinkanyezi, i-thin filament pyrometry, ubucwebe, i-graphene kanye nokukhiqizwa kwensimbi, kanye ne-catalyst. Sinikeza ama-wafer e-6H silicon carbide anekhwalithi ehlukile kanye ne-99.99% emangalisayo.

Sithumelele i-imeyili

Izici

Okulandelayo yizici ze-silicon carbide wafer:

1. I-wafer ye-silicon carbide (SiC) inezakhiwo ezinhle zikagesi kanye nezakhiwo ezinhle kakhulu zokushisa. I-wafer ye-silicon carbide (SiC) inokukhula okuphansi kokushisa.

2. I-wafer ye-silicon carbide (SiC) inezakhiwo zobulukhuni obuphakeme. I-wafer ye-silicon carbide (SiC) isebenza kahle emazingeni okushisa aphezulu.

3. I-wafer ye-silicon carbide (SiC) inokumelana okukhulu nokugqwala, ukuguguleka kanye nokubola. Ngaphezu kwalokho, i-wafer ye-silicon carbide (SiC) nayo ikhazimula kakhulu kunedayimane noma i-cubic zirconia.

4. Ukumelana okungcono kwemisebe: Ama-SIC wafers anokumelana okukhulu kwemisebe, okwenza afaneleke ukusetshenziswa ezindaweni zokukhanya. Izibonelo zifaka phakathi izindiza nezindawo zenuzi.
5. Ubulukhuni obuphezulu: Ama-wafer e-SIC aqinile kune-silicon, okuthuthukisa ukuqina kwama-wafer ngesikhathi sokucubungula.

6. I-dielectric constant ephansi: I-dielectric constant yama-SIC wafers iphansi kuneye-silicon, okusiza ukunciphisa amandla e-parasitic kudivayisi futhi kuthuthukiswe ukusebenza kwemvamisa ephezulu.

I-silicon carbide wafer inezinhlelo zokusebenza eziningana

I-SiC isetshenziselwa ukwenziwa kwamadivayisi ane-voltage ephezulu kakhulu kanye namandla aphezulu njenge-diode, ama-transistors kagesi, kanye namadivayisi e-microwave anamandla aphezulu. Uma kuqhathaniswa namadivayisi avamile e-Si, amadivayisi asebenzisa i-SiC anejubane lokushintsha ngokushesha ama-voltage aphezulu, ukumelana okuphansi kwe-parasitic, usayizi omncane, ukupholisa okuncane okudingekayo ngenxa yamandla okushisa aphezulu.
Nakuba i-Silicon carbide (SiC-6H) - 6H wafer inezakhiwo ze-elekthronikhi ezinhle kakhulu, i-silicon carbide (SiC-6H) - 6H wafer ilungiswa kalula futhi ifundwe kangcono.
1. Amandla kagesi: Ama-Silicon Carbide Wafers asetshenziswa ekukhiqizweni kwe-Power Electronics, asetshenziswa ezinhlobonhlobo zezicelo, okuhlanganisa izimoto zikagesi, izinhlelo zamandla avuselelekayo, kanye nemishini yezimboni. Ukushisa okuphezulu kanye nokulahlekelwa amandla aphansi kwe-Silicon Carbide kwenza kube yinto efanelekile kulezi zicelo.
2. Ukukhanyisa kwe-LED: Ama-Wafer e-Silicon Carbide asetshenziswa ekukhiqizeni ukukhanyisa kwe-LED. Amandla aphezulu e-Silicon Carbide enza kube nokwenzeka ukukhiqiza ama-LED aqinile futhi ahlala isikhathi eside kunemithombo yokukhanyisa yendabuko.
3. Amadivayisi E-Semiconductor: Ama-Silicon Carbide Wafers asetshenziswa ekukhiqizweni kwamadivayisi E-Semiconductor, asetshenziswa ezinhlobonhlobo zezinhlelo zokusebenza, okuhlanganisa ezokuxhumana ngocingo, ikhompyutha, kanye ne-electronics yabathengi. Ukushisa okuphezulu kanye nokulahlekelwa amandla aphansi kwe-Silicon Carbide kwenza kube yinto efanelekile kulezi zinhlelo zokusebenza.
4. Amaseli Elanga: Ama-Silicon Carbide Wafers asetshenziswa ekukhiqizweni kwamaseli elanga. Amandla aphezulu e-Silicon Carbide enza kube nokwenzeka ukukhiqiza amaseli elanga ahlala isikhathi eside futhi ahlala isikhathi eside kunamaseli elanga endabuko.
Sekukonke, i-ZMSH Silicon Carbide Wafer iwumkhiqizo oguquguqukayo futhi osezingeni eliphezulu ongasetshenziswa ezinhlobonhlobo zezicelo. Ukushisa kwayo okuphezulu, ukulahlekelwa amandla aphansi, kanye namandla aphezulu kwenza kube yinto efanelekile yamadivayisi kagesi asebenza ngokushisa okuphezulu kanye namandla aphezulu. Nge-Bow/Warp engu-≤50um, Ubulukhuni Bomphezulu obungu-≤1.2nm, kanye Nokumelana Nokumelana Okuphezulu/Okuphansi, i-Silicon Carbide Wafer iyindlela ethembekile nephumelelayo yanoma yiluphi uhlelo lokusebenza oludinga indawo eyisicaba nebushelelezi.
Umkhiqizo wethu we-SiC Substrate uza nokusekelwa kobuchwepheshe okuphelele kanye nezinsizakalo ukuqinisekisa ukusebenza kahle kanye nokwaneliseka kwamakhasimende.
Ithimba lethu lochwepheshe liyatholakala ukusiza ngokukhetha umkhiqizo, ukufaka, kanye nokuxazulula izinkinga.
Sinikeza ukuqeqeshwa kanye nemfundo ngokusetshenziswa nokugcinwa kwemikhiqizo yethu ukuze sisize amakhasimende ethu ukuthi andise ukutshalwa kwezimali kwawo.
Ngaphezu kwalokho, sinikeza izibuyekezo zomkhiqizo eziqhubekayo kanye nezithuthukisi ukuqinisekisa ukuthi amakhasimende ethu ahlala ethola ubuchwepheshe bamuva.