I-substrate

I-Silicon Carbide SiC Ingot engu-6inch N yohlobo lweDummy/ugqinsi lwebanga lokuqala lungenziwa ngokwezifiso
I-SiC Ingot 4H-N uhlobo lwe-Dummy grade 2inch 3inch 4inch 6inch ukujiya:＞10mm
I-HPSI SiC wafer dia:3inch ukujiya:350um± 25 µm ye-Power Electronics
3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade
I-Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer Epholishiwe Kabili Eqhuba Ibanga Le-Prime Mos Ibanga
I-2inch Silicon Carbide Wafer 6H-N Uhlobo Lwebanga Le-Prime Ibanga Ucwaningo Ibanga Le-Dummy Ibanga 330μm 430μm Ukuqina
I-2inch silicon carbide substrate 6H-N enezinhlangothi ezimbili ezipholishiwe ububanzi 50.8mm ibanga lokucwaninga ibanga lokukhiqiza
p-uhlobo 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Ziro MPD
I-SiC substrate P-type 4H/6H-P 3C-N 4inch enogqinsi lwama-350um Ibanga Lokukhiqiza Ibanga leDummy
4H/6H-P 6inch SiC wafer Zero MPD grade Production Ibanga leDummy Grade
Uhlobo lwe-P-SiC wafer 4H/6H-P 3C-N 6inch ukujiya okungu-350 μm nge-Primary Flat Orientation

1 2 3 4 5 6 Okulandelayo >>> Ikhasi 1/7