I-substrate

I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ukujiya
4H-N/6H-N SiC Wafer Reasearch ukukhiqizwa kwe-Dummy grade Dia150mm I-Silicon carbide substrate
8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lokukhiqiza ibanga 500um ukujiya
I-Dia300x1.0mmt Ukuqina kweSapphire Wafer C-Plane SSP/DSP
8 intshi 200mm iSapphire substrate isicwecwana sesafire esincanyana 1SP 2SP 0.5mm 0.75mm
I-8 intshi ye-SiC silicon carbide wafer 4H-N uhlobo lwebanga lokukhiqiza elingu-0.5mm ibanga lokucwaninga ngokwezifiso i-substrate epholishiwe
I-HPSI SiC wafer dia:3inch ukujiya:350um± 25 µm ye-Power Electronics
Ikristalu eyodwa Al2O3 99.999% amawafa esafire e-Dia200mm 1.0mm 0.75mm ubukhulu
156mm 159mm 6 inch Sapphire Wafer yenkampani yenethiwekhiC-Plane DSP TTV
I-C/A/M axis 4 inch sapphire wafers single crystal Al2O3,SSP DSP high hardness high sapphire substrate
3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade
Uhlobo lwe-P-SiC substrate SiC wafer Dia2inch umkhiqizo omusha

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