I-Silicon Dioxide wafer i-SiO2 wafer ewugqinsi Ipholishiwe, I-Prime And Test Grade

Isicwecwana se-Silicon Dioxide SiO2 siwugqinsi Esipholishiwe, Isithombe Esifakiwe Esiyi-Prime And Test Grade

Incazelo emfushane:

I-oxidation eshisayo ingumphumela wokudalula i-silicon wafer ekuhlanganiseni kwama-oxidizing agents nokushisa ukwenza ungqimba lwe-silicon dioxide (SiO2) .Inkampani yethu ingakwazi ukwenza ngokwezifiso ama-silicon dioxide oxide flakes ngemingcele ehlukene kumakhasimende, ngekhwalithi enhle kakhulu; ukujiya kongqimba lwe-oxide, ukubumbana, ukufana kanye nokuma kwekristalu okuphikisayo konke kwenziwa ngokuhambisana namazinga kazwelonke.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ukwethulwa kwebhokisi le-wafer

Umkhiqizo	Amawafa e-Thermal Oxide (Si+SiO2).
Indlela Yokukhiqiza	I-LPCVD
Ukupholisha ubuso	I-SSP/DSP
Ububanzi	2inch/3inch/4inch/5inch/6inch
Uhlobo	Uhlobo lwe-P / N uhlobo
Ukujiya Kwesendlalelo Se-Oxidation	100nm ~1000nm
Ukuqondisa	<100> <111>
Ukumelana nogesi	0.001-25000(Ω•cm)
Isicelo	Isetshenziselwa othwala isampula yemisebe ye-synchrotron, i-PVD/CVD enamathela njenge-substrate, isampula yokukhula ye-magnetron sputtering, i-XRD, i-SEM,Amandla e-athomu, i-infrared spectroscopy, i-fluorescence spectroscopy nezinye izingxenye zokuhlola zokuhlaziya, i-molecular beam epitaxial growth substrates, ukuhlaziywa kwe-X-ray kwama-crystalline semiconductors.

Amawafa e-Silicon oxide amafilimu e-silicon dioxide akhuliswa phezu kwamawafa e-silicon ngokusebenzisa umoya-mpilo noma umhwamuko wamanzi emazingeni okushisa aphezulu (800°C~1150°C) esebenzisa inqubo ye-oxidation eshisayo enemishini yeshubhu yesithando somoya. Ubukhulu benqubo busuka kuma-nanometers angu-50 kuya ku-2 microns, izinga lokushisa lenqubo lifika ku-1100 degrees Celsius, indlela yokukhula ihlukaniswe ngokuthi "i-oksijeni emanzi" kanye "nomoya-mpilo owomile" izinhlobo ezimbili. I-Thermal Oxide iyisendlalelo se-oxide "esikhulile", esinokufana okuphezulu, ukuminyana okungcono namandla e-dielectric ephakeme kunezendlalelo ze-oxide ezifakwe i-CVD, okuholela kukhwalithi ephezulu.

I-Oxygen Oxidation Eyomile

I-silicon ihlangana nomoya-mpilo futhi ungqimba lwe-oxide lulokhu luhamba lubheke kungqimba lwe-substrate. I-oxidation eyomile idinga ukwenziwa emazingeni okushisa asuka ku-850 kuya ku-1200°C, namazinga aphansi okukhula, futhi ingasetshenziselwa ukukhula kwesango elivikelwe i-MOS. I-oxidation eyomile ikhethwa kune-oxidation emanzi uma ikhwalithi ephezulu, ungqimba lwe-silicon oxide oluncane kakhulu ludingeka. Umthamo we-oxidation owomile: 15nm ~ 300nm.

2. I-Oxidation Emanzi

Le ndlela isebenzisa umhwamuko wamanzi ukwenza ungqimba lwe-oxide ngokufaka ishubhu yesithando somlilo ngaphansi kwezimo zokushisa eziphakeme. Ukuminyana kwe-oksijini oxidation emanzi kubi kancane kune-oksijini eyomile, kodwa uma kuqhathaniswa ne-oksijini eyomile inzuzo yayo ukuthi inezinga eliphezulu lokukhula, elifanele ukukhula kwefilimu engaphezu kuka-500nm. Umthamo we-oxidation omanzi: 500nm ~ 2µm.

Ishubhu ye-AEMD ye-atmospheric pressure oxidation furnace tube iyishubhu yesithando somlilo esivundlile saseCzech, esibonakala ngokuzinza kwenqubo ephezulu, ukufana kwefilimu okuhle nokulawula izinhlayiyana eziphakeme. Ishubhu le-silicon oxide furnace lingacubungula ama-wafer angama-50 ngeshubhu ngalinye, anokufana okuhle kakhulu kwe-intra- kanye ne-inter-wafers.