I-wafer ye-Silicon Dioxide ye-SiO2 ubukhulu obucwebezelayo, obuyi-Prime kanye ne-Test Grade
Ukwethulwa kwebhokisi le-wafer
| Umkhiqizo | Ama-wafer e-Thermal Oxide (Si+SiO2) |
| Indlela Yokukhiqiza | I-LPCVD |
| Ukupholisha Okungaphezulu | I-SSP/DSP |
| Ububanzi | 2inch / 3inch / 4inch / 5inch / 6inch |
| Uhlobo | Uhlobo lwe-P / Uhlobo lwe-N |
| Ubukhulu be-Oxidation Layer | 100nm ~ 1000nm |
| Ukuqondiswa | <100> <111> |
| Ukumelana kukagesi | 0.001-25000(Ω•cm) |
| Isicelo | Isetshenziselwa isithwali sesampula semisebe ye-synchrotron, i-PVD/CVD coating njenge-substrate, isampula yokukhula kwe-magnetron sputtering, i-XRD, i-SEM,Amandla e-athomu, i-infrared spectroscopy, i-fluorescence spectroscopy kanye nezinye izisekelo zokuhlola ukuhlaziywa, izisekelo zokukhula kwe-epitaxial ye-molecular beam, ukuhlaziywa kwe-X-ray kwama-semiconductor e-crystalline |
Ama-wafer e-silicon oxide angamafilimu e-silicon dioxide akhuliswe phezu kwama-wafer e-silicon ngokusebenzisa umoya-mpilo noma umhwamuko wamanzi emazingeni okushisa aphezulu (800°C ~ 1150°C) kusetshenziswa inqubo yokushiswa kwe-thermal ngemishini yeshubhu yesithando somoya. Ubukhulu benqubo busukela kuma-nanometer angu-50 kuya kuma-microns angu-2, izinga lokushisa lenqubo lifinyelela kuma-degree Celsius angu-1100, indlela yokukhula ihlukaniswe izinhlobo ezimbili "ze-oxygen emanzi" kanye "ne-oxygen eyomile". I-Thermal Oxide iwungqimba lwe-oxide "olukhulile", olunokufana okuphezulu, ukuqina okungcono kanye namandla aphezulu e-dielectric kunezendlalelo ze-oxide ezibekwe yi-CVD, okuholela ekhwalithini ephezulu.
Ukushiswa Kwe-Oksijini Eyomile
I-Silicon isabela nomoya-mpilo futhi ungqimba lwe-oxide luhlala luhamba luye ongqimbeni lwe-substrate. I-oxidation eyomile idinga ukwenziwa emazingeni okushisa asukela ku-850 kuya ku-1200°C, ngamazinga okukhula aphansi, futhi ingasetshenziswa ekukhuleni kwesango elivikelwe yi-MOS. I-oxidation eyomile ikhethwa kakhulu kune-oxidation emanzi lapho kudingeka ungqimba lwe-silicon oxide olusezingeni eliphezulu, oluncane kakhulu. Umthamo we-oxidation eyomile: 15nm ~ 300nm.
2. Ukushiswa Okumanzi
Le ndlela isebenzisa umhwamuko wamanzi ukwakha ungqimba lwe-oxide ngokungena eshubhini lesithando ngaphansi kwezimo zokushisa okuphezulu. Ukuqina kwe-oxidation ye-oxygen emanzi kubi kancane kune-oxidation ye-oxygen eyomile, kodwa uma kuqhathaniswa ne-oxidation ye-oxygen eyomile inzuzo yayo ukuthi inesilinganiso sokukhula esiphezulu, esifanele ukukhula kwefilimu engaphezu kuka-500nm. Umthamo we-oxidation emanzi: 500nm ~ 2µm.
Ishubhu lesithando sokushisa esinomfutho womoya i-AEMD iyishubhu lesithando sokushisa elivundlile laseCzech, elibonakala ngokuqina kwenqubo ephezulu, ukufana okuhle kwefilimu kanye nokulawula okuphakeme kwezinhlayiya. Ishubhu lesithando sokushisa i-silicon oxide lingacubungula ama-wafer afinyelela ku-50 ngeshubhu ngalinye, ngokufana okuhle kakhulu kwangaphakathi naphakathi kwama-wafer.
Umdwebo Oningiliziwe
