I-SiC

I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ukujiya
4H-N/6H-N SiC Wafer Reasearch ukukhiqizwa kwe-Dummy grade Dia150mm I-Silicon carbide substrate
12 inch SIC substrate silicon carbide prime grade diameter 300mm usayizi omkhulu 4H-N Ifanele idivayisi yamandla aphezulu ukuchithwa kokushisa
I-8 intshi ye-SiC silicon carbide wafer 4H-N uhlobo lwebanga lokukhiqiza elingu-0.5mm ibanga lokucwaninga ngokwezifiso i-substrate epholishiwe
I-HPSI SiC wafer dia:3inch ukujiya:350um± 25 µm ye-Power Electronics
3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade
Uhlobo lwe-P-SiC substrate SiC wafer Dia2inch umkhiqizo omusha
8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lokukhiqiza ibanga 500um ukujiya
I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer Epholishiwe Kabili Eqhuba Ibanga Le-Prime Mos Ibanga
I-SiC Ceramic end effector enikeza ingalo yokuthwala i-wafer
Ipuleti/ithreyi ye-ceramic ye-SiC yesibambi se-wafer esingu-4inch 6inch se-ICP
3 inch High Purity (Akulungisiwe) I-Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)

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