I-SiC
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I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ukujiya
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4H-N/6H-N SiC Wafer Reasearch ukukhiqizwa kwe-Dummy grade Dia150mm I-Silicon carbide substrate
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8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lokukhiqiza ibanga 500um ukujiya
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I-HPSI SiC wafer dia:3inch ukujiya:350um± 25 µm ye-Power Electronics
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I-8 intshi ye-SiC silicon carbide wafer 4H-N uhlobo lwebanga lokukhiqiza elingu-0.5mm ibanga lokucwaninga ngokwezifiso i-substrate epholishiwe
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3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade
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Uhlobo lwe-P-SiC substrate SiC wafer Dia2inch umkhiqizo omusha
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I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer Epholishiwe Kabili Eqhuba Ibanga Le-Prime Mos Ibanga
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I-SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n uhlobo 2 3 4 6 8inch olutholakalayo
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I-2 intshi ye-Sic silicon carbide substrate 6H-N Uhlobo 0.33mm 0.43mm ukupholisha okunezinhlangothi ezimbili.
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I-SiC substrate 3inch 350um ukujiya HPSI uhlobo Prime Grade Dummy grade
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I-Silicon Carbide SiC Ingot engu-6inch N yohlobo lweDummy/ugqinsi lwebanga lokuqala lungenziwa ngokwezifiso