I-SiC

I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ukujiya
4H-N/6H-N SiC Wafer Reasearch ukukhiqizwa kwe-Dummy grade Dia150mm I-Silicon carbide substrate
8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lokukhiqiza ibanga 500um ukujiya
I-HPSI SiC wafer dia:3inch ukujiya:350um± 25 µm ye-Power Electronics
3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy grade grade Prime
Uhlobo lwe-P-SiC substrate SiC wafer Dia2inch umkhiqizo omusha
I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer Epholishiwe Kabili Eqhuba Ibanga Le-Prime Mos Ibanga
3 inch High Purity (Angagudluliwe)I-Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl)
I-SiC substrate 3inch 350um ukujiya HPSI uhlobo Prime Grade Dummy grade
I-Silicon Carbide SiC Ingot engu-6inch N yohlobo lweDummy/ugqinsi lwebanga lokuqala lungenziwa ngokwezifiso
SiC Ingot 4H uhlobo Dia 4inch 6inch Ukuqina 5-10mm Ucwaningo / Dummy Ibanga
6 ku-Silicon Carbide 4H-SiC Semi-Insulating Ingot, i-Dummy Grade

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