I-SiC
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12 inch SIC substrate silicon carbide prime grade diameter 300mm usayizi omkhulu 4H-N Ifanele idivayisi yamandla aphezulu ukuchithwa kokushisa
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I-8 intshi ye-SiC silicon carbide wafer 4H-N uhlobo lwebanga lokukhiqiza elingu-0.5mm ibanga lokucwaninga ngokwezifiso i-substrate epholishiwe
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I-HPSI SiC wafer dia:3inch ukujiya:350um± 25 µm ye-Power Electronics
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3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade
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Uhlobo lwe-P-SiC substrate SiC wafer Dia2inch umkhiqizo omusha
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8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lokukhiqiza ibanga 500um ukujiya
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I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer Epholishiwe Kabili Eqhuba Ibanga Le-Prime Mos Ibanga
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I-HPSI SiC Wafer ≥90% Ibanga Lokubona Lokudlulisela Lezibuko ze-AI/AR
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I-Semi-Insulating Silicon Carbide (SiC) Substrate High-Purity Yezingilazi ze-Ar
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4H-SiC Epitaxial Wafers for Ultra-High Voltage MOSFETs (100–500 μm, 6 intshi)
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I-SICOI (I-Silicon Carbide ku-Insulator) I-Wafers SiC Film KU-Silicon
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I-Silicon Carbide (SiC) I-Single-Crystal Substrate – 10×10mm Wafer