I-SiC
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I-substrate ye-SIC engu-12 intshi i-silicon carbide prime grade diameter 300mm enkulu 4H-N Ifanelekela ukushabalalisa ukushisa kwedivayisi enamandla aphezulu
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I-wafer ye-SiC silicon carbide engu-8 intshi engu-4H-N uhlobo lwe-0.5mm lwebanga lokukhiqiza locwaningo lwebanga lesisekelo esenziwe ngokwezifiso esicwebezelisiwe
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I-HPSI SiC wafer dia: 3inch ubukhulu: 350um ± 25 µm ye-Power Electronics
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3 intshi Ubumsulwa obuphezulu obuyi-Semi-Insulating （HPSI）SiC wafer 350um Dummy grade grade Prime
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I-substrate ye-P-type SiC wafer ye-SiC umkhiqizo omusha we-Dia2inch
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Ama-Wafers e-SiC angu-8inch angu-200mm angu-4H-N uhlobo lokukhiqiza ibanga lobukhulu obungu-500um
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I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade
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I-wafer engu-12-Inch engu-4H-SiC yezibuko ze-AR
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I-HPSI SiC Wafer ≥90% Ibanga Lokukhanya Lokudlulisa Ama-AI/AR
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I-Silicon Carbide (SiC) Substrate Engangenisi Umswakama Ophakeme Wezingilazi Ze-Ar
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Ama-Wafer e-Epitaxial angu-4H-SiC ama-MOSFET e-Ultra-High Voltage (100–500 μm, amasentimitha angu-6)
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I-SICOI (i-Silicon Carbide ku-Insulator) Ama-Wafers SiC Film KU-Silicon