Imikhiqizo
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I-substrate ye-SIC engu-12 intshi i-silicon carbide prime grade diameter 300mm enkulu 4H-N Ifanelekela ukushabalalisa ukushisa kwedivayisi enamandla aphezulu
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I-Dia300x1.0mmt Ubukhulu be-Sapphire Wafer C-Plane SSP/DSP
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I-wafer yesafire engu-8 intshi engu-200mm ubukhulu obuncane 1SP 2SP 0.5mm 0.75mm
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I-HPSI SiC wafer dia: 3inch ubukhulu: 350um ± 25 µm ye-Power Electronics
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I-wafer ye-SiC silicon carbide engu-8 intshi engu-4H-N uhlobo lwe-0.5mm lwebanga lokukhiqiza locwaningo lwebanga lesisekelo esenziwe ngokwezifiso esicwebezelisiwe
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Ama-wafer e-sapphire e-single crystal Al2O3 angu-99.999% Dia200mm ubukhulu obungu-1.0mm no-0.75mm
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I-Wafer ye-Sapphire engu-156mm engu-159mm engu-6 intshi yenkampani ye-C-Plane DSP TTV
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I-C/A/M axis 4 intshi ama-sapphire wafers i-single crystal Al2O3,SSP DSP high hardness spread substrate
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3 intshi Ubumsulwa obuphezulu obuyi-Semi-Insulating （HPSI）SiC wafer 350um Dummy grade grade Prime
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I-substrate ye-P-type SiC wafer ye-SiC umkhiqizo omusha we-Dia2inch
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Indlela yokucubungula ubuso bezinduku ze-laser ze-sapphire crystal ezifakwe i-titanium
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Ama-Wafers e-SiC angu-8inch angu-200mm angu-4H-N uhlobo lokukhiqiza ibanga lobukhulu obungu-500um