I-LiTaO3 Wafer 2inch-8inch 10x10x0.5 mm 1sp 2sp ye-5G/6G Communications

I-LiTaO3 Wafer 2inch-8inch 10x10x0.5 mm 1sp 2sp yesithombe esifakiwe se-5G/6G

Incazelo emfushane:

I-LiTaO3 Wafer (i-lithium tantalate wafer), into ebalulekile kumasemiconductors esizukulwane sesithathu nama-optoelectronics, isebenzisa izinga lokushisa eliphezulu le-Curie (610°C), uhla olubanzi lokubonisa ngale (0.4–5.0 μm), i-piezoelectric coefficient ephakeme kakhulu (d33 > 1,500 ditoelectric 2%) kanye nokulahlekelwa kwe-ditoelectric ephansi (d33 > 1,500 pC/N) Ukuxhumana kwe-5G, ukuhlanganiswa kwezithombe, namadivayisi we-quantum. Isebenzisa ubuchwepheshe bokwakha obuthuthukisiwe obufana nokuthutha umhwamuko obonakalayo (PVT) kanye ne-chemical vapor deposition (CVD), i-XKH ihlinzeka nge-X/Y/Z-cut, 42°Y-cut, and periodically pole pole (PPLT)ngamafomethi angu-2–8-intshi, afaka ukurhabazeka kwendawo (Ra) <0.5 cm <0.5 cm⁻<0.5 nmncane Amasevisi ethu ahlanganisa i-Fe doping, ukunciphisa amakhemikhali, kanye ne-Smart-Cut heterogeneous integration, ukubhekana nezihlungi ze-optical ezisebenza kahle kakhulu, izitholi ze-infrared, kanye nemithombo yokukhanya ye-quantum. Lokhu okubalulekile kuqhuba impumelelo ekwenzeni okuncane, ukusebenza kwemvamisa ephezulu, nokuzinza kwe-thermal, kusheshisa ukushintshwa kwasekhaya kubuchwepheshe obubalulekile.

Thumela i-imeyili kithi

Izici

Imingcele yezobuchwepheshe

Igama	I-Optical-grade LiTaO3	Izinga lethebula lomsindo LiTaO3
I-Axial	U-Z usike + / - 0.2 °	36 ° Y ukusika / 42 ° Y ukusika / X ukusika (+ / - 0.2 °)
Ububanzi	76.2mm + / - 0.3mm/ 100±0.2mm	76.2mm + /-0.3mm 100mm +/-0.3mm 0r 150±0.5mm
Indiza ye-Datum	22mm +/ - 2mm	22mm +/-2mm 32mm +/-2mm
Ubukhulu	500um +/-5mm 1000um +/-5mm	500um +/-20mm 350um +/-20mm
I-TTV	≤ 10um	≤ 10um
Izinga lokushisa le-Curie	605 °C + / - 0.7 °C (Indlela ye-DTA)	605 °C + / -3 °C (Indlela ye-DTA
Ikhwalithi yobuso	Ukupholisha okunezinhlangothi ezimbili	Ukupholisha okunezinhlangothi ezimbili
Imiphetho e-Chamfered	ukuzungeza unqenqema	ukuzungeza unqenqema

Izimpawu Ezisemqoka

1. Ukusebenza kukagesi nokubona
· I-Electro-Optic Coefficient: i-r33 ifinyelela ku-30 pm/V (X-cut), 1.5× ngaphezu kwe-LiNbO3, ivumela i-ultra-wideband electro-optic modulation (>40 GHz umkhawulokudonsa).
· Ukusabela Okubanzi Kwe-Spectral: Ibanga lokudlulisela elingu-0.4–5.0 μm (ugqinsi oluyi-8 mm), elinomkhawulo wokumunca i-ultraviolet liphansi njengo-280 nm, lilungele amalaser e-UV namadivayisi wamachashazi e-quantum.
· I-Pyroelectric Coefficient ephansi: dP/dT = 3.5×10⁻⁴ C/(m²·K), iqinisekisa ukuzinza kuzinzwa ze-infrared zezinga eliphezulu lokushisa.

2.Izakhiwo ezishisayo nezemishini
· High Thermal Conductivity: 4.6 W/m·K (X-cut), iquadruple that of quartz, isekela -200–500°C ukuhamba ngebhayisikili okushisayo.
· I-Coefficient Ephansi Yokwandisa Okushisayo: I-CTE = 4.1×10⁻⁶/K (25–1000°C), ihambisana nokupakishwa kwe-silicon ukuze kuncishiswe ukucindezeleka okushisayo.
3. Ukulawula Iphutha kanye Nokunemba Kokucubungula
· Ukuminyana Kwe-Micropipe: <0.1 cm⁻² (ama-wafers amayintshi angu-8), ukuminyana kokuhlukaniswa <500 cm⁻² (kuqinisekiswe nge-KOH etching).
· Ikhwalithi Yomphezulu: I-CMP-ipholishwe yaba ngu-Ra <0.5 nm, ehlangabezana nezimfuneko ze-EUV lithography-grade flatness.

Izinhlelo zokusebenza ezibalulekile

Isizinda	I-Application Scenarios	Izinzuzo Technical
I-Optical Communications	I-100G/400G DWDM lasers, i-silicon photonics hybrid modules	Ukudlulisa okubanzi kwe-wafer ye-LiTaO3 nokulahleka kwe-waveguide ephansi (α <0.1 dB/cm) kunika amandla ukunwetshwa kwe-C-band.
I-5G/6G Communications	Izihlungi ze-SAW (1.8–3.5 GHz), izihlungi ze-BAW-SMR	Ama-wafer angu-42°Y-cut athola i-Kt² >15%, aletha ukulahleka kokufakwa okuphansi (<1.5 dB) kanye nokuphuma okuphezulu (>30 dB).
I-Quantum Technologies	Izitholi ze-photon eyodwa, imithombo ye-parametric down-conversion	I-coefficient ephezulu engaqondile (χ(2)=40 pm/V) nezinga lokubala elimnyama eliphansi (<100 count/s) ithuthukisa ukwethembeka kwe-quantum.
I-Industrial Sensing	Izinzwa zengcindezi ephezulu yokushisa, ama-transformer amanje	Impendulo ye-wafer ye-piezoelectric ye-LiTaO3 (g33 >20 mV/m) nokubekezelela izinga lokushisa eliphezulu (>400°C) kufanelana nezindawo ezidlulele.

Izinsizakalo ze-XKH

1. I-Custom Wafer Fabrication

· Usayizi Nokusika: Amawafa angu-2–8-intshi ane-X/Y/Z-cut, 42°Y-cut, kanye nokusikeka kwe-angular ngokwezifiso (±0.01° ukubekezelelana).

· Ukulawula i-Doping: I-Fe, i-Mg doping ngendlela ye-Czochralski (ububanzi bokugxila 10¹⁶–10¹⁹ cm⁻³) ukuze kuthuthukiswe ama-coefficient e-electro-optic kanye nokuzinza kwe-thermal.

2.Advanced Process Technologies
.
· I-Periodic Poling (PPLT): Ubuchwepheshe be-Smart-Cut yamawafa e-LTOI, ukufeza ukunemba kwesikhathi sesizinda esingu-±10 nm kanye nokuguqulwa kwemvamisa ye-quasi-phase-matched (QPM).

· Ukuhlanganiswa Okungafani: Amawafa ayinhlanganisela e-LiTaO3 asekelwe ku-Si-based (POI) anokulawula ukujiya (300–600 nm) kanye ne-thermal conductivity kufika ku-8.78 W/m·K yezihlungi ze-SAW ze-high-frequency.

3.IziNhlelo Zokuphatha Izinga eliphezulu
.
· Ukuhlolwa kokuphela kuya ekupheleni: I-Raman spectroscopy (ukuqinisekiswa kwe-polytype), i-XRD (crystallinity), i-AFM (i-surface morphology), nokuhlolwa kokufana kokubona (Δn <5×10⁻⁵).

4.Global Supply Chain Support
.
· Amandla okukhiqiza: Okuphumayo kwanyanga zonke > ama-wafers angu-5,000 (8-inch: 70%), nokulethwa kwezimo eziphuthumayo zamahora angu-48.

· Inethiwekhi Yezinhlelo Zokusebenza: Isebenza e-Europe, eNyakatho Melika, nase-Asia-Pacific ngempahla yomoya/yasolwandle enamaphakheji alawulwa izinga lokushisa.