I-Wafer ye-Sapphire engu-12 intshi C-Plane SSP/DSP
Umdwebo Oningiliziwe
Isingeniso seSapphire
I-wafer ye-sapphire iyinto engaphansi kwekristalu eyodwa eyenziwe nge-aluminium oxide (Al₂O₃) emsulwa kakhulu. Amakristalu amakhulu e-sapphire akhuliswa kusetshenziswa izindlela ezithuthukisiwe njenge-Kyropoulos (KY) noma i-Heat Exchange Method (HEM), bese icutshungulwa ngokusika, ukuqondiswa, ukugaya, kanye nokupholisha ngokunemba. Ngenxa yezakhiwo zayo eziyingqayizivele zomzimba, ezibonakalayo, nezamakhemikhali, i-sapphire wafer idlala indima engenakuphikiswa emikhakheni yama-semiconductor, ama-optoelectronic, kanye nama-electronics asezingeni eliphezulu abathengi.
Izindlela Zokwenziwa Kwe-Sapphire Ezijwayelekile
| Indlela | Isimiso | Izinzuzo | Izinhlelo Eziyinhloko |
|---|---|---|---|
| Indlela yeVerneuil(Ukuhlanganiswa Kwamalangabi) | Impuphu ye-Al₂O₃ emsulwa kakhulu iyancibilikiswa elangeni le-oxyhydrogen, amaconsi aqina ungqimba ngengqimba embewini | Izindleko eziphansi, ukusebenza kahle okuphezulu, inqubo elula | Ama-sapphire asezingeni elifanele, izinto zokukhanya zakuqala |
| Indlela yeCzochralski (CZ) | I-Al₂O₃ iyancibilikiswa esitsheni esivuthayo, bese ikristalu yembewu idonswa kancane kancane phezulu ukuze ikhule ikristalu | Ikhiqiza amakristalu amakhulu ngobuqotho obuhle | Amakristalu e-laser, amafasitela abonakalayo |
| Indlela yeKyropoulos (KY) | Ukupholisa okuhamba kancane okulawulwayo kuvumela ikristalu ukuthi ikhule kancane kancane ngaphakathi kwe-crucible | Iyakwazi ukukhulisa amakristalu amakhulu, angenangcindezi ephansi (amashumi amakhilogremu noma ngaphezulu) | Izisekelo ze-LED, izikrini ze-smartphone, izingxenye ezibonakalayo |
| Indlela ye-HEM(Ukushintshana Kokushisa) | Ukupholisa kuqala kusukela phezulu kwebhodwe, amakristalu akhula ehla evela embewini | Ikhiqiza amakristalu amakhulu kakhulu (afinyelela kumakhulu amakhilogremu) ngekhwalithi efanayo | Amafasitela amakhulu abonakalayo, izindiza, izibuko zamasosha |
Ukuqondiswa Kwekristalu
| Ukuqondiswa / Indiza | Inkomba kaMiller | Izici | Izinhlelo Eziyinhloko |
|---|---|---|---|
| Indiza engu-C | (0001) | Iqonde ngqo ku-c-axis, ubuso obuyi-polar, ama-athomu ahlelwe ngokulinganayo | I-LED, ama-diode e-laser, ama-substrate e-GaN epitaxial (asetshenziswa kakhulu) |
| Indiza | (11-20) | Ngokuhambisana ne-c-axis, ubuso obungeyona i-polar, kugwema imiphumela ye-polarization | Amadivayisi e-GaN epitaxy angewona awe-polar, ama-optoelectronic |
| Indiza i-M | (10-10) | Kuhambisana ne-c-axis, okungeyona i-polar, ukulingana okuphezulu | Amadivayisi e-GaN epitaxy asebenza kahle kakhulu, i-optoelectronic |
| Indiza engu-R | (1-102) | Ithambekele ku-c-axis, izakhiwo ezinhle kakhulu zokukhanya | Amafasitela abonakalayo, izitholi ze-infrared, izingxenye ze-laser |
Ukucaciswa kwe-Sapphire Wafer （Okungenziwa ngezifiso）
| Into | Ama-wafer e-Sapphire angu-1 intshi (0001) angu-430μm | |
| Izinto Zekristalu | 99,999%, Ukuhlanzeka Okuphezulu, i-Monocrystalline Al2O3 | |
| Ibanga | I-Prime, i-Epi-Ready | |
| Ukuqondiswa Komphezulu | Indiza ye-C(0001) | |
| Indiza engu-C engaphandle kwe-engeli ebheke ku-M-axis 0.2 +/- 0.1° | ||
| Ububanzi | 25.4 mm +/- 0.1 mm | |
| Ubukhulu | 430 μm +/- 25 μm | |
| I-Side Single Polished | Ubuso Bangaphambili | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| (SSP) | Indawo Yangemuva | Inhlabathi enhle, i-Ra = 0.8 μm kuya ku-1.2 μm |
| Ipholishwe Kabili Ehlangothini | Ubuso Bangaphambili | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| (i-DSP) | Indawo Yangemuva | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| I-TTV | < 5 μm | |
| UKUGOBHOZA | < 5 μm | |
| I-WARP | < 5 μm | |
| Ukuhlanza / Ukupakisha | Ukuhlanza nokupakisha i-vacuum cleanroom yekilasi le-100, | |
| Izingcezu ezingu-25 ephaketheni lekhasethi elilodwa noma ephaketheni elilodwa. | ||
| Into | Ama-wafer e-C angu-2 intshi (0001) angu-430μm | |
| Izinto Zekristalu | 99,999%, Ukuhlanzeka Okuphezulu, i-Monocrystalline Al2O3 | |
| Ibanga | I-Prime, i-Epi-Ready | |
| Ukuqondiswa Komphezulu | Indiza ye-C(0001) | |
| Indiza engu-C engaphandle kwe-engeli ebheke ku-M-axis 0.2 +/- 0.1° | ||
| Ububanzi | 50.8 mm +/- 0.1 mm | |
| Ubukhulu | 430 μm +/- 25 μm | |
| Ukuqondiswa Okuyisisekelo Okuyisicaba | Indiza engu-A(11-20) +/- 0.2° | |
| Ubude Obuphansi Obuyinhloko | 16.0 mm +/- 1.0 mm | |
| I-Side Single Polished | Ubuso Bangaphambili | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| (SSP) | Indawo Yangemuva | Inhlabathi enhle, i-Ra = 0.8 μm kuya ku-1.2 μm |
| Ipholishwe Kabili Ehlangothini | Ubuso Bangaphambili | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| (i-DSP) | Indawo Yangemuva | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| I-TTV | < 10 μm | |
| UKUGOBHOZA | < 10 μm | |
| I-WARP | < 10 μm | |
| Ukuhlanza / Ukupakisha | Ukuhlanza nokupakisha i-vacuum cleanroom yekilasi le-100, | |
| Izingcezu ezingu-25 ephaketheni lekhasethi elilodwa noma ephaketheni elilodwa. | ||
| Into | Ama-wafer e-Sapphire angu-3 intshi (0001) angu-500μm | |
| Izinto Zekristalu | 99,999%, Ukuhlanzeka Okuphezulu, i-Monocrystalline Al2O3 | |
| Ibanga | I-Prime, i-Epi-Ready | |
| Ukuqondiswa Komphezulu | Indiza ye-C(0001) | |
| Indiza engu-C engaphandle kwe-engeli ebheke ku-M-axis 0.2 +/- 0.1° | ||
| Ububanzi | 76.2 mm +/- 0.1 mm | |
| Ubukhulu | 500 μm +/- 25 μm | |
| Ukuqondiswa Okuyisisekelo Okuyisicaba | Indiza engu-A(11-20) +/- 0.2° | |
| Ubude Obuphansi Obuyinhloko | 22.0 mm +/- 1.0 mm | |
| I-Side Single Polished | Ubuso Bangaphambili | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| (SSP) | Indawo Yangemuva | Inhlabathi enhle, i-Ra = 0.8 μm kuya ku-1.2 μm |
| Ipholishwe Kabili Ehlangothini | Ubuso Bangaphambili | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| (i-DSP) | Indawo Yangemuva | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| I-TTV | < 15 μm | |
| UKUGOBHOZA | < 15 μm | |
| I-WARP | < 15 μm | |
| Ukuhlanza / Ukupakisha | Ukuhlanza nokupakisha i-vacuum cleanroom yekilasi le-100, | |
| Izingcezu ezingu-25 ephaketheni lekhasethi elilodwa noma ephaketheni elilodwa. | ||
| Into | Ama-wafer e-Sapphire angu-4-intshi (0001) angu-650μm | |
| Izinto Zekristalu | 99,999%, Ukuhlanzeka Okuphezulu, i-Monocrystalline Al2O3 | |
| Ibanga | I-Prime, i-Epi-Ready | |
| Ukuqondiswa Komphezulu | Indiza ye-C(0001) | |
| Indiza engu-C engaphandle kwe-engeli ebheke ku-M-axis 0.2 +/- 0.1° | ||
| Ububanzi | 100.0 mm +/- 0.1 mm | |
| Ubukhulu | 650 μm +/- 25 μm | |
| Ukuqondiswa Okuyisisekelo Okuyisicaba | Indiza engu-A(11-20) +/- 0.2° | |
| Ubude Obuphansi Obuyinhloko | 30.0 mm +/- 1.0 mm | |
| I-Side Single Polished | Ubuso Bangaphambili | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| (SSP) | Indawo Yangemuva | Inhlabathi enhle, i-Ra = 0.8 μm kuya ku-1.2 μm |
| Ipholishwe Kabili Ehlangothini | Ubuso Bangaphambili | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| (i-DSP) | Indawo Yangemuva | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| I-TTV | < 20 μm | |
| UKUGOBHOZA | < 20 μm | |
| I-WARP | < 20 μm | |
| Ukuhlanza / Ukupakisha | Ukuhlanza nokupakisha i-vacuum cleanroom yekilasi le-100, | |
| Izingcezu ezingu-25 ephaketheni lekhasethi elilodwa noma ephaketheni elilodwa. | ||
| Into | Ama-wafer e-Sapphire angu-6 intshi (0001) angu-1300μm | |
| Izinto Zekristalu | 99,999%, Ukuhlanzeka Okuphezulu, i-Monocrystalline Al2O3 | |
| Ibanga | I-Prime, i-Epi-Ready | |
| Ukuqondiswa Komphezulu | Indiza ye-C(0001) | |
| Indiza engu-C engaphandle kwe-engeli ebheke ku-M-axis 0.2 +/- 0.1° | ||
| Ububanzi | 150.0 mm +/- 0.2 mm | |
| Ubukhulu | 1300 μm +/- 25 μm | |
| Ukuqondiswa Okuyisisekelo Okuyisicaba | Indiza engu-A(11-20) +/- 0.2° | |
| Ubude Obuphansi Obuyinhloko | 47.0 mm +/- 1.0 mm | |
| I-Side Single Polished | Ubuso Bangaphambili | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| (SSP) | Indawo Yangemuva | Inhlabathi enhle, i-Ra = 0.8 μm kuya ku-1.2 μm |
| Ipholishwe Kabili Ehlangothini | Ubuso Bangaphambili | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| (i-DSP) | Indawo Yangemuva | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| I-TTV | < 25 μm | |
| UKUGOBHOZA | < 25 μm | |
| I-WARP | < 25 μm | |
| Ukuhlanza / Ukupakisha | Ukuhlanza nokupakisha i-vacuum cleanroom yekilasi le-100, | |
| Izingcezu ezingu-25 ephaketheni lekhasethi elilodwa noma ephaketheni elilodwa. | ||
| Into | Ama-wafer e-Sapphire angu-8-intshi (0001) angu-1300μm | |
| Izinto Zekristalu | 99,999%, Ukuhlanzeka Okuphezulu, i-Monocrystalline Al2O3 | |
| Ibanga | I-Prime, i-Epi-Ready | |
| Ukuqondiswa Komphezulu | Indiza ye-C(0001) | |
| Indiza engu-C engaphandle kwe-engeli ebheke ku-M-axis 0.2 +/- 0.1° | ||
| Ububanzi | 200.0 mm +/- 0.2 mm | |
| Ubukhulu | 1300 μm +/- 25 μm | |
| I-Side Single Polished | Ubuso Bangaphambili | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| (SSP) | Indawo Yangemuva | Inhlabathi enhle, i-Ra = 0.8 μm kuya ku-1.2 μm |
| Ipholishwe Kabili Ehlangothini | Ubuso Bangaphambili | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| (i-DSP) | Indawo Yangemuva | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| I-TTV | < 30 μm | |
| UKUGOBHOZA | < 30 μm | |
| I-WARP | < 30 μm | |
| Ukuhlanza / Ukupakisha | Ukuhlanza nokupakisha i-vacuum cleanroom yekilasi le-100, | |
| Ukupakisha okukodwa. | ||
| Into | Ama-wafer e-Sapphire angu-12-intshi (0001) angu-1300μm | |
| Izinto Zekristalu | 99,999%, Ukuhlanzeka Okuphezulu, i-Monocrystalline Al2O3 | |
| Ibanga | I-Prime, i-Epi-Ready | |
| Ukuqondiswa Komphezulu | Indiza ye-C(0001) | |
| Indiza engu-C engaphandle kwe-engeli ebheke ku-M-axis 0.2 +/- 0.1° | ||
| Ububanzi | 300.0 mm +/- 0.2 mm | |
| Ubukhulu | 3000 μm +/- 25 μm | |
| I-Side Single Polished | Ubuso Bangaphambili | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| (SSP) | Indawo Yangemuva | Inhlabathi enhle, i-Ra = 0.8 μm kuya ku-1.2 μm |
| Ipholishwe Kabili Ehlangothini | Ubuso Bangaphambili | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| (i-DSP) | Indawo Yangemuva | I-Epi-polished, i-Ra < 0.2 nm (nge-AFM) |
| I-TTV | < 30 μm | |
| UKUGOBHOZA | < 30 μm | |
| I-WARP | < 30 μm | |
Inqubo Yokukhiqiza I-Wafer Ye-Sapphire
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Ukukhula Kwekristalu
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Khulisa amabhola e-sapphire (100–400 kg) usebenzisa indlela ye-Kyropoulos (KY) ezithandweni zokukhulisa amakristalu ezinikezelwe.
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Ukubhoboza Nokubumba Ingot
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Sebenzisa umgqomo wokubhoboza ukuze ucubungule i-boule ibe yizingodo ezisilinda ezinobubanzi obungamasentimitha angu-2-6 kanye nobude obungamamilimitha angu-50-200.
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Ukufakwa Kokuqala
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Hlola ama-ingots ukuze ubone amaphutha bese wenza i-annealing yokuqala yokushisa okuphezulu ukuze unciphise ukucindezeleka kwangaphakathi.
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Ukuqondiswa Kwekristalu
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Thola ukuqondiswa okunembile kwe-sapphire ingot (isb., i-C-plane, i-A-plane, i-R-plane) usebenzisa amathuluzi okuqondiswa.
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Ukusika I-Saw Yezintambo Eziningi
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Sika i-ingot ibe ama-wafer amancane ngokwezinga elidingekayo usebenzisa imishini yokusika enezintambo eziningi.
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Ukuhlolwa Kokuqala kanye Nokunamathiselwa Kwesibili
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Hlola ama-wafer aqoshiwe (ukujiya, ukuba yisicaba, ukukhubazeka kobuso).
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Phinda u-annealing uma kudingeka ukuze uthuthukise ikhwalithi yekristalu.
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Ukuchoboza, Ukugaya kanye nokupholisha kwe-CMP
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Yenza i-chamfering, ukugaya ubuso, kanye ne-chemical mechanical polishing (CMP) ngemishini ekhethekile ukuze uthole izindawo ezisezingeni lesibuko.
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Ukuhlanza
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Hlanza ama-wafer kahle usebenzisa amanzi ahlanzekile kakhulu namakhemikhali endaweni ehlanzekile ukuze ususe izinhlayiya kanye nokungcola.
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Ukuhlolwa Kokubona Nokwenyama
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Yenza ukutholwa kokudluliselwa futhi urekhode idatha ye-optical.
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Linganisa amapharamitha e-wafer afaka phakathi i-TTV (Ukuhlukahluka Kokujiya Okuphelele), Umnsalo, Ukugoba, ukunemba kokuma, kanye nobulukhuni bomphezulu.
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Ukugqoka (Ongakukhetha)
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Faka izembozo (isb. izembozo ze-AR, izendlalelo zokuvikela) ngokwezidingo zamakhasimende.
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Ukuhlolwa Kokugcina Nokupakisha
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Hlola ikhwalithi engu-100% egumbini lokuhlanza.
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Faka ama-wafer emabhokisini ekhasethi ngaphansi kwezimo ezihlanzekile ze-Class-100 bese uwavala nge-vacuum ngaphambi kokuthunyelwa.
Ukusetshenziswa kwama-Sapphire Wafers
Ama-wafer e-sapphire, anobulukhuni bawo obungavamile, ukudlulisa okubonakalayo okuvelele, ukusebenza kahle kokushisa, kanye nokushisa kukagesi, asetshenziswa kabanzi ezimbonini eziningi. Ukusetshenziswa kwawo akugcini nje ngokumboza izimboni ze-LED zendabuko kanye ne-optoelectronic kodwa futhi ayanda nakuma-semiconductor, ama-electronics abathengi, kanye nezinkundla zezindiza nezokuvikela ezithuthukisiwe.
1. Ama-semiconductor kanye nama-Optoelectronics
Izisekelo ze-LED
Ama-wafer e-sapphire ayizinto eziyinhloko zokukhula kwe-gallium nitride (GaN) epitaxial, asetshenziswa kabanzi kuma-LED aluhlaza okwesibhakabhaka, ama-LED amhlophe, kanye nobuchwepheshe be-Mini/Micro LED.
Ama-Diode e-Laser (ama-LD)
Njengezinto ezisetshenziswayo zama-laser diode asekelwe ku-GaN, ama-sapphire wafer asekela ukuthuthukiswa kwamadivayisi e-laser anamandla amakhulu, ahlala isikhathi eside.
Ama-Photodetectors
Kuma-photodetector e-ultraviolet kanye ne-infrared, ama-wafer e-sapphire avame ukusetshenziswa njengamafasitela abonakalayo kanye nezindawo zokuvikela umswakama.
2. Amadivayisi e-Semiconductor
Ama-RFIC (Amasekethe Ahlanganisiwe E-Radio Frequency)
Ngenxa yokuvikela kwawo ugesi okuhle kakhulu, ama-wafer e-sapphire ayizinto ezifanelekile zamadivayisi e-microwave asebenza kakhulu futhi anamandla aphezulu.
Ubuchwepheshe be-Silicon-on-Sapphire (SoS)
Ngokusebenzisa ubuchwepheshe be-SoS, amandla e-parasitic angancishiswa kakhulu, okuthuthukisa ukusebenza kwesekethe. Lokhu kusetshenziswa kabanzi kwezokuxhumana ze-RF kanye ne-electronics yezindiza.
3. Izicelo Zokubona
Amafasitela e-Infrared Optical
Njengoba i-sapphire inamandla amakhulu okudlulisa ukukhanya kusukela ku-200 nm kuya ku-5000 nm, i-sapphire isetshenziswa kakhulu kuma-infrared detectors kanye nezinhlelo zokuqondisa ze-infrared.
Amafasitela e-Laser Anamandla Aphezulu
Ubulukhuni kanye nokumelana nokushisa kwe-sapphire kwenza kube yinto enhle kakhulu yamafasitela namalensi avikelayo ezinhlelweni ze-laser ezinamandla amakhulu.
4. Izinto zikagesi zabathengi
Izimbozo Zelensi Yekhamera
Ubulukhuni obukhulu be-sapphire buqinisekisa ukumelana nokuklwebheka kwama-smartphone nama-lens ekhamera.
Izinzwa Zeminwe
Ama-wafer e-sapphire angasebenza njengezembozo eziqinile nezibonakalayo ezithuthukisa ukunemba nokuthembeka ekuqaphelweni kweminwe.
Amawashi Ahlakaniphile Nezibonisi Eziphezulu
Izikrini ze-sapphire zihlanganisa ukumelana nokuklwebheka nokucaca okuphezulu kokukhanya, okwenza zithandwe emikhiqizweni ye-elekthronikhi esezingeni eliphezulu.
5. Izindiza kanye Nokuvikela
AmaDome e-Infrared e-Missile
Amafasitela e-sapphi ahlala ecacile futhi ezinzile ngaphansi kwezimo zokushisa okuphezulu nesivinini esikhulu.
Izinhlelo Zokubona Zezindiza
Zisetshenziswa emafasiteleni asebenza ngokukhanya aqinile kanye nemishini yokubuka eyenzelwe izindawo ezibucayi kakhulu.
Eminye Imikhiqizo Ejwayelekile Ye-Sapphire
Imikhiqizo Yokukhanya
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Amafasitela e-Sapphire Optical
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Kusetshenziswa kuma-laser, ama-spectrometer, izinhlelo ze-infrared imaging, kanye namafasitela ezinzwa.
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Ibanga lokudlulisa:UV 150 nm kuya ku-IR ephakathi 5.5 μm.
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Amalensi eSapphire
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Kusetshenziswa ezinhlelweni ze-laser ezinamandla amakhulu kanye ne-aerospace optics.
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Kungenziwa njengamalensi aqondile, aqondile, noma ayisilinda.
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AmaPrizimu eSapphire
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Kusetshenziswa kumathuluzi okulinganisa okukhanya kanye nezinhlelo zokuthwebula izithombe ngokunemba.
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Izindiza kanye Nokuvikela
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AmaDome eSapphire
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Vikela abafuna i-infrared ezicitshwayo, ama-UAV, kanye nezindiza.
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Izimbozo Zokuvikela Zesafire
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Imelana nokushayisana komoya okusheshayo kanye nezimo ezinzima.
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Ukupakishwa Komkhiqizo
Mayelana ne-XINKEHUI
I-Shanghai Xinkehui New Material Co., Ltd. ingenye yezinkampani ezithengisa izinto ezintsha.umhlinzeki omkhulu we-optical & semiconductor eShayina, eyasungulwa ngo-2002. I-XKH yathuthukiswa ukuze inikeze abacwaningi bezemfundo ama-wafers nezinye izinto zesayensi ezihlobene ne-semiconductor kanye nezinsizakalo. Izinto ze-semiconductor yibhizinisi lethu eliyinhloko, ithimba lethu lisekelwe kobuchwepheshe, selokhu lasungulwa, i-XKH ihileleke kakhulu ocwaningweni nasekuthuthukisweni kwezinto ze-elekthronikhi ezithuthukisiwe, ikakhulukazi emkhakheni we-wafer/substrate ehlukahlukene.
Ozakwethu
Ngobuchwepheshe bayo obuhle kakhulu bezinto ze-semiconductor, iShanghai Zhimingxin isibe ngumlingani othembekile wezinkampani eziphezulu emhlabeni kanye nezikhungo zemfundo ezaziwayo. Ngokuqhubeka kwayo ekusunguleni nasekusebenzeni kahle, iZhimingxin isungule ubudlelwano obujulile bokubambisana nabaholi bemboni njengeSchott Glass, iCorning, kanye neSeoul Semiconductor. Lokhu kubambisana akugcini nje ngokuthuthukisa izinga lobuchwepheshe lemikhiqizo yethu, kodwa futhi kukhuthaze intuthuko yezobuchwepheshe emikhakheni ye-elekthronikhi yamandla, amadivayisi e-optoelectronic, kanye namadivayisi e-semiconductor.
Ngaphezu kokubambisana nezinkampani ezaziwayo, iZhimingxin iphinde yasungula ubudlelwano bokubambisana kocwaningo lwesikhathi eside namanyuvesi aphezulu emhlabeni jikelele njengeHarvard University, University College London (UCL), kanye ne-University of Houston. Ngalezi zinhlangano, iZhimingxin ayinikezi nje kuphela ukwesekwa kobuchwepheshe kumaphrojekthi ocwaningo lwesayensi kwezemfundo, kodwa futhi ihlanganyela ekuthuthukisweni kwezinto ezintsha kanye nokusungula izinto ezintsha kwezobuchwepheshe, iqinisekisa ukuthi sihlala sihamba phambili embonini ye-semiconductor.
Ngokubambisana okuseduze nalezi zinkampani ezidumile emhlabeni wonke kanye nezikhungo zemfundo, iShanghai Zhimingxin iyaqhubeka nokukhuthaza ukusungulwa kwezobuchwepheshe kanye nentuthuko, ihlinzeka ngemikhiqizo nezixazululo zezinga lomhlaba ukuze kuhlangatshezwane nezidingo ezikhulayo zemakethe yomhlaba wonke.
