Isendlalelo se-Epitaxial
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I-GaN engu-200mm engu-8inch ku-substrate ye-sapphire Epi-layer wafer
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I-Substrate Engalingani Yokusebenza Okuphezulu Yamadivayisi E-RF Acoustic (LNOSiC)
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I-GaN ku-Glass engu-4-Inch: Izinketho Zengilazi Ezingenziwa Ngokwezifiso Kufaka phakathi i-JGS1, i-JGS2, i-BF33, kanye ne-Ordinary Quartz
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I-AlN-on-NPSS Wafer: Isendlalelo se-aluminium nitride esisebenza kahle kakhulu kwi-substrate ye-sapphire engapholishiwe yezinhlelo zokusebenza ezisezingeni eliphezulu lokushisa, amandla aphezulu, kanye ne-RF
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Ama-Wafer e-Epitaxial e-GaN-on-SiC enziwe ngokwezifiso (100mm, 150mm) – Izinketho Eziningi Ze-SiC Substrate (4H-N, HPSI, 4H/6H-P)
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Ama-Wafer e-GaN-on-Diamond angu-4 intshi angu-6 intshi Ubukhulu obuphelele be-epi (micron) 0.6 ~ 2.5 noma okwenzelwe izinhlelo zokusebenza ze-High-Frequency
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I-GaAs enamandla amakhulu epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yokwelashwa nge-laser
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Ama-InGaAs epitaxial wafer substrate PD Array photodetector arrays angasetshenziswa ku-LiDAR
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Isitholi sokukhanya se-APD se-InP epitaxial wafer esingu-2 intshi esingu-3 intshi esingu-4 intshi sokuxhumana kwe-fiber optic noma i-LiDAR
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I-wafer ye-SiC Epitaxiy engu-6inch N/P yamukelekile ngokwezifiso
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I-wafer ye-SiC Epi engu-4inch ye-MOS noma i-SBD
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I-Silicon-On-Insulator Substrate SOI wafer izendlalelo ezintathu ze-Microelectronics kanye ne-Radio Frequency