Isitholi sokukhanya se-APD se-InP epitaxial wafer esingu-2 intshi esingu-3 intshi esingu-4 intshi sokuxhumana kwe-fiber optic noma i-LiDAR

Incazelo emfushane:

I-InP epitaxial substrate iyisisekelo sokukhiqiza i-APD, ngokuvamile into ye-semiconductor efakwa ku-substrate ngobuchwepheshe bokukhula kwe-epitaxial. Izinto ezivame ukusetshenziswa zifaka i-silicon (Si), i-gallium arsenide (GaAs), i-gallium nitride (GaN), njll., enezakhiwo ezinhle kakhulu ze-photoelectric. I-APD photodetector uhlobo olukhethekile lwe-photodetector olusebenzisa umphumela we-avalanche photoelectric ukuthuthukisa isignali yokuthola. Lapho ama-photon ehla ku-APD, kukhiqizwa ama-electron-hole pair. Ukusheshisa kwalaba bathwali ngaphansi kwesenzo sensimu kagesi kungaholela ekwakhekeni kwabathwali abaningi, "umphumela we-avalanche", okwandisa kakhulu ugesi wokukhipha.
Ama-wafer e-Epitaxial akhuliswe yi-MOCvD agxile kakhulu ekusetshenzisweni kwe-avalanche photodetection diode. Isendlalelo sokumunca salungiswa ngezinto ze-U-InGaAs ezine-doping yangemuva <5E14. Isendlalelo esisebenzayo singasebenzisa i-InP noma i-InAlAslayer. I-InP epitaxial substrate iyinto eyisisekelo yokukhiqiza i-APD, enquma ukusebenza kwe-optical detector. I-APD photodetector uhlobo lwe-photodetector ezwela kakhulu, esetshenziswa kabanzi emikhakheni yokuxhumana, yokuzwa kanye neyokuthwebula izithombe.

Sithumelele i-imeyili

Izici

Izici ezibalulekile zeshidi le-InP laser epitaxial zifaka phakathi

1. Izici zesikhala sebhendi: I-InP inesikhala sebhendi esincane, esifaneleka ukutholwa kokukhanya kwe-infrared kwamaza amade, ikakhulukazi ebangeni lamaza obubanzi obusukela ku-1.3μm kuya ku-1.5μm.
2. Ukusebenza kahle kwe-Optical: Ifilimu ye-InP epitaxial inokusebenza kahle kwe-optical, njengamandla okukhanya kanye nokusebenza kahle kwe-quantum yangaphandle kuma-wavelength ahlukene. Isibonelo, ku-480 nm, amandla okukhanya kanye nokusebenza kahle kwe-quantum yangaphandle kungama-11.2% kanye nama-98.8%, ngokulandelana.
3. I-Carrier Dynamics: Ama-InP nanoparticles (NPs) abonisa ukuziphatha kokubola okuphindwe kabili ngesikhathi sokukhula kwe-epitaxial. Isikhathi sokubola okusheshayo sibangelwa ukujova kwe-carrier ku-InGaAs layer, kuyilapho isikhathi sokubola kancane sihlobene nokuhlanganiswa kwe-carrier kuma-InP NPs.
4. Izici zokushisa okuphezulu: Izinto zomthombo we-AlGaInAs/InP quantum zisebenza kahle kakhulu ekushiseni okuphezulu, okungavimbela ngempumelelo ukuvuza komfudlana futhi kuthuthukise izici zokushisa okuphezulu kwe-laser.
5. Inqubo Yokukhiqiza: Amashidi e-InP epitaxial avame ukukhuliswa ku-substrate ngobuchwepheshe be-molecular beam epitaxy (MBE) noma ubuchwepheshe be-metal-organic chemical vapor deposition (MOCVD) ukuze kufezwe amafilimu asezingeni eliphezulu.
Lezi zici zenza ama-wafer epitaxial laser e-InP abe nezinhlelo zokusebenza ezibalulekile ekuxhumaneni kwe-optical fiber, ukusatshalaliswa kokhiye we-quantum kanye nokutholwa kwe-remote optical.

Ukusetshenziswa okuyinhloko kwamaphilisi epitaxial epitaxial e-InP laser kufaka phakathi

1. Ama-Photonics: Ama-laser nama-detector e-InP asetshenziswa kabanzi ekuxhumaneni kwe-optical, izikhungo zedatha, izithombe ze-infrared, i-biometrics, i-3D sensing kanye ne-LiDAR.

2. Ukuxhumana: Izinto ze-InP zinezinhlelo ezibalulekile ekuhlanganisweni okukhulu kwama-laser amade-wavelength asekelwe ku-silicon, ikakhulukazi ekuxhumaneni nge-optical fiber.

3. Ama-laser e-infrared: Ukusetshenziswa kwama-laser e-quantum well asekelwe ku-InP ku-band ye-mid-infrared (njenge-4-38 microns), okuhlanganisa ukuzwa igesi, ukutholwa kokuqhuma kanye nokuthathwa kwezithombe ze-infrared.

4. I-Silicon photonics: Ngobuchwepheshe bokuhlanganisa obuhlukahlukene, i-InP laser idluliselwa ku-substrate esekelwe ku-silicon ukuze yakhe ipulatifomu yokuhlanganisa i-silicon optoelectronic esebenza ngemisebenzi eminingi.

5. Ama-laser asebenza kahle kakhulu: Izinto ze-InP zisetshenziselwa ukukhiqiza ama-laser asebenza kahle kakhulu, njenge-InGaAsP-InP transistor lasers enobude be-wavelength obuyi-1.5 microns.

I-XKH inikeza ama-wafer epitaxial e-InP enziwe ngokwezifiso anezakhiwo nobukhulu obuhlukene, ahlanganisa izinhlelo zokusebenza ezahlukahlukene njengokuxhumana okubonakalayo, izinzwa, iziteshi zesisekelo ze-4G/5G, njll. Imikhiqizo ye-XKH ikhiqizwa kusetshenziswa imishini ye-MOCVD ethuthukisiwe ukuqinisekisa ukusebenza okuphezulu nokuthembeka. Ngokuphathelene nokuthutha, i-XKH ineziteshi eziningi zomthombo wamazwe ngamazwe, ingaphatha kalula inani lama-oda, futhi inikeze izinsizakalo ezinenani elingeziwe njengokunciphisa, ukuhlukaniswa, njll. Izinqubo zokulethwa eziphumelelayo ziqinisekisa ukulethwa ngesikhathi futhi zihlangabezana nezidingo zamakhasimende zekhwalithi nezikhathi zokulethwa. Ngemva kokufika, amakhasimende angathola ukwesekwa kobuchwepheshe okuphelele kanye nensizakalo yangemva kokuthengisa ukuqinisekisa ukuthi umkhiqizo usetshenziswa kahle.