I-Dia300x1.0mmt Ukuqina kweSapphire Wafer C-Plane SSP/DSP

Incazelo emfushane:

I-Shanghai Xinkehui New Material Co., Ltd. ingakhiqiza amawafa esafire anomumo ohlukahlukene ongaphezulu (c, r, a, kanye ne-m-plane), futhi ilawule i-engeli yokusikwa ibe ngaphakathi kwedigri engu-0.1. Ngokusebenzisa ubuchwepheshe bethu bobunikazi, siyakwazi ukuzuza ikhwalithi ephezulu edingekayo ezinhlelweni ezifana nokukhula kwe-epitaxial kanye ne-wafer bonding.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ukwethulwa kwebhokisi le-wafer

I-Crystal Materials	99,999% ye-Al2O3,I-High Purity, i-Monocrystalline, i-Al2O3
Ikhwalithi yekristalu	Okufakiwe, ama-block marks, amawele, Umbala, amabhamuza amancane kanye nezikhungo zokuhlakazeka azikho
Ububanzi	2intshi	3inch	4intshi	6inch ～ 12inch
Ububanzi	50.8± 0.1mm	76.2±0.2mm	100±0.3mm	Ngokuhambisana nezinhlinzeko zokukhiqiza okujwayelekile
Ubukhulu	430±15µm	550±15µm	650±20µm	Kungenziwa egcizelele ikhasimende
Ukuqondisa	I-C- indiza (0001) eya ku-M-indiza (1-100) noma i-A-plane(1 1-2 0) 0.2±0.1° /0.3±0.1°, i-R-plane (1-1 0 2), i-A-plane (1 1-2 0), indiza ye-M(1-1 0 0), Noma yikuphi ukuma , Noma iyiphi i-engeli
Ubude obuyisicaba obuyisisekelo	16.0±1mm	22.0±1.0mm	32.5±1.5 mm	Ngokuhambisana nezinhlinzeko zokukhiqiza okujwayelekile
I-Primary Orientation eyisicaba	I-A-plane (1 1-2 0 ) ± 0.2°
I-TTV	≤10µm	≤15µm	≤20µm	≤30µm
I-LTV	≤10µm	≤15µm	≤20µm	≤30µm
I-TIR	≤10µm	≤15µm	≤20µm	≤30µm
KHOTHAMA	≤10µm	≤15µm	≤20µm	≤30µm
I-Wap	≤10µm	≤15µm	≤20µm	≤30µm
Indawo Engaphambili	I-Epi-Polished (Ra< 0.2nm)

*Umnsalo: Ukuchezuka kwephoyinti elimaphakathi lendawo emaphakathi yewafa yamahhala, engaboshiwe ukusuka endizeni eyireferensi, lapho indiza eyinkomba ichazwa khona amakhona amathathu kanxantathu olinganayo.

*I-Warp: Umehluko phakathi kobukhulu nobuncane bebanga lendawo emaphakathi yewafa yamahhala, engaboshiwe ukusuka endizeni eyireferensi echazwe ngenhla.

Imikhiqizo yekhwalithi ephezulu namasevisi wamadivayisi e-semiconductor esizukulwane esilandelayo kanye nokukhula kwe-epitaxial:

Izinga eliphakeme lokucaba (i-TTV elawulwayo, umnsalo, i-warp njll.)

Ukuhlanzwa kwekhwalithi ephezulu (ukungcoliswa kwezinhlayiyana eziphansi, ukungcoliswa kwensimbi ephansi)

I-substrate drilling, i-grooving, ukusika, nokupholisha ngemuva

Ukunamathiselwa kwedatha njengokuhlanzeka nokuma kwe-substrate (kuyakhetheka)

Uma unesidingo sama-sapphire substrates, sicela ukhululeke ukuxhumana:

imeyili:eric@xkh-semitech.com+86 158 0194 2596 /doris@xkh-semitech.com+86 187 0175 6522

Sizobuyela kuwe ngokushesha!