I-Dia300x1.0mmt Ubukhulu be-Sapphire Wafer C-Plane SSP/DSP

I-Dia300x1.0mmt Ubukhulu be-Sapphire Wafer C-Plane Isithombe Esifakiwe se-SSP/DSP

Incazelo emfushane:

I-Shanghai Xinkehui New Material Co., Ltd. ingakhiqiza ama-wafer e-sapphire anezindlela ezahlukahlukene zokwakheka komhlaba (c, r, a, kanye ne-m-plane), futhi ilawule i-engeli enganqunywanga ibe ngaphakathi kwamadigri angu-0.1. Sisebenzisa ubuchwepheshe bethu obukhethekile, siyakwazi ukufeza ikhwalithi ephezulu edingekayo ezinhlelweni ezifana nokukhula kwe-epitaxial kanye nokubopha kwe-wafer.

Sithumelele i-imeyili

Izici

isivivinyo1

Ukwethulwa kwebhokisi le-wafer

Izinto Zekristalu	99,999% we-Al2O3, Ubumsulwa Obuphezulu, i-Monocrystalline, i-Al2O3
Ikhwalithi yekristalu	Izinto ezifakiwe, izimpawu zamabhulokhi, amawele, umbala, amabhamuza amancane kanye nezikhungo zokuhlakazeka azikho
Ububanzi	2intshi	3intshi	4intshi	Amasentimitha angu-6 ～ Amasentimitha angu-12
Ububanzi	50.8± 0.1mm	76.2±0.2mm	100±0.3mm	Ngokuhambisana nezinhlinzeko zokukhiqiza okujwayelekile
Ubukhulu	430±15µm	550±15µm	650±20µm	Kungenziwa ngezifiso yikhasimende
Ukuqondiswa	Indiza engu-C (0001) kuya ku-M-plane (1-100) noma indiza engu-A(1 1-2 0) 0.2±0.1° /0.3±0.1°, indiza engu-R (1-1 0 2), indiza engu-A (1 1-2 0), indiza engu-M(1-1 0 0), Noma yikuphi ukuqondiswa, Noma yiliphi i-engeli
Ubude obuyisicaba obuyinhloko	16.0±1mm	22.0±1.0mm	32.5±1.5 mm	Ngokuhambisana nezinhlinzeko zokukhiqiza okujwayelekile
Ukuma okuqondile okuyisisekelo	Indiza engu-A (1 1-2 0) ± 0.2°
I-TTV	≤10µm	≤15µm	≤20µm	≤30µm
I-LTV	≤10µm	≤15µm	≤20µm	≤30µm
I-TIR	≤10µm	≤15µm	≤20µm	≤30µm
UKUGOBHOZA	≤10µm	≤15µm	≤20µm	≤30µm
I-Warp	≤10µm	≤15µm	≤20µm	≤30µm
Ubuso Bangaphambili	I-Epi-Polished (Ra< 0.2nm)

*Umnsalo: Ukuphambuka kwephuzu eliphakathi nendawo eliphakathi kwe-wafer ekhululekile, engabanjwanga kusuka endaweni yokubhekisela, lapho indawo yokubhekisela ichazwa khona ngamakhona amathathu kanxantathu olinganayo.

*I-Warp: Umehluko phakathi kwamabanga aphezulu naphansi obubanzi obuphakathi nendawo ye-wafer ekhululekile, engaboshiwe kusuka endaweni yokubhekisela echazwe ngenhla.

Imikhiqizo nezinsizakalo ezisezingeni eliphezulu zamadivayisi e-semiconductor esizukulwane esilandelayo kanye nokukhula kwe-epitaxial:

Izinga eliphezulu lokusicaba (i-TTV elawulwayo, umnsalo, i-warp njll.)

Ukuhlanzwa kwekhwalithi ephezulu (ukungcola okuphansi kwezinhlayiya, ukungcola okuphansi kwensimbi)

Ukubhoboza i-substrate, ukuhlikihla, ukusika, kanye nokupholisha i-backside

Ukunamathiselwa kwedatha efana nokuhlanzeka kanye nesimo se-substrate (ongakukhetha)

Uma unesidingo se-sapphire substrates, sicela ukhululeke ukuxhumana nathi:

iposi：eric@xkh-semitech.com+86 158 0194 2596 /doris@xkh-semitech.com+86 187 0175 6522

Sizobuyela kuwe ngokushesha okukhulu!