I-8 intshi ye-SiC silicon carbide wafer 4H-N uhlobo lwebanga lokukhiqiza elingu-0.5mm ibanga lokucwaninga ngokwezifiso i-substrate epholishiwe

I-SiC silicon carbide wafer engu-8 intshi 4H-N uhlobo lwebanga lokukhiqiza elingu-0.5mm ibanga lokucwaninga ngokwezifiso ingxenye engaphansi epholishiwe Isithombe Esifakiwe

Incazelo emfushane:

I-Silicon carbide (SiC), eyaziwa nangokuthi i-silicon carbide, iyi-semiconductor equkethe i-silicon ne-carbon enefomula yamakhemikhali i-SiC. I-SiC isetshenziswa kumadivayisi kagesi we-semiconductor asebenza emazingeni okushisa aphezulu noma ukucindezela okuphezulu, noma kokubili. I-SiC futhi ingenye yezingxenye ezibalulekile ze-LED, iyi-substrate evamile yamadivayisi e-GaN akhulayo, futhi ingasetshenziswa njengesitha sokushisa sama-LED anamandla amakhulu.
I-8-intshi ye-silicon carbide substrate iyingxenye ebalulekile yesizukulwane sesithathu sezinto zokwakha ze-semiconductor, enezici zamandla ensimu ephukile, ukushisa okuphezulu kwe-thermal, izinga eliphezulu lokukhukhula kwe-electron, njll., futhi ifaneleka ukwenza izinga lokushisa eliphezulu, amandla kagesi aphezulu, namandla aphezulu. Izinkambu zayo eziyinhloko zokufaka isicelo zihlanganisa izimoto zikagesi, ukuhamba kwezitimela, ukudluliswa kwamandla kagesi aphezulu kanye nokuguqulwa, i-photovoltaics, ukuxhumana kwe-5G, isitoreji samandla, i-aerospace, kanye nezikhungo zedatha yedatha ye-AI core computing.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici eziyinhloko ze-8-inch silicon carbide substrate 4H-N uhlobo zifaka:

1. Ukuminyana kwe-Microtubule: ≤ 0.1/cm² noma ngaphansi, okufana nokuminyana kwe-microtubule kwehliswa kakhulu kube ngaphansi kuka-0.05/cm² kweminye imikhiqizo.
2. I-Crystal form ratio: 4H-SiC crystal form ratio ifinyelela ku-100%.
3. Ukumelana: 0.014~0.028 Ω·cm, noma izinzile phakathi kuka-0.015-0.025 Ω·cm.
4. Ubulukhuni bobuso: CMP Si Face Ra≤0.12nm.
5. Ukujiya: Ngokuvamile 500.0±25μm noma 350.0±25μm.
6. I-Chamfering angle: 25±5° noma 30±5° ku-A1/A2 kuye ngogqinsi.
7. Isamba sokuminyana kokususwa: ≤3000/cm².
8. Ukungcola kwensimbi engaphezulu: ≤1E+11 ama-athomu/cm².
9. Ukugoba kanye ne-warpage: ≤ 20μm no-≤2μm, ngokulandelana.
Lezi zici zenza ama-substrates e-silicon carbide angu-8-intshi abe nenani elibalulekile lesicelo ekwenziweni kwamadivayisi kagesi asezingeni eliphezulu, ama-high-frequency, namandla aphezulu.

I-8inch silicon carbide wafer inezinhlelo zokusebenza ezimbalwa.

1. Amadivayisi kagesi: Amawafa e-SiC asetshenziswa kakhulu ekwenzeni izinto zikagesi ezinamandla njengama-MOSFETs (ama-metal-oxide-semiconductor field-effect transistors), ama-Schottky diode, namamojula ahlanganisa amandla. Ngenxa ye-thermal conductivity ephezulu, i-voltage ephezulu yokuwohloka, kanye nokuhamba kwe-electron ephezulu ye-SiC, lawa madivayisi angakwazi ukufeza ukuguqulwa kwamandla asebenzayo, asebenza kakhulu endaweni yokushisa ephezulu, ephezulu, kanye ne-high-frequency environment.

2. Imishini ye-Optoelectronic: Amawafa e-SiC adlala indima ebalulekile emishinini ye-optoelectronic, esetshenziselwa ukwakha ama-photodetectors, ama-laser diode, imithombo ye-ultraviolet, njll. Izici eziphakeme ze-Silicon carbide ezibonakalayo neze-elekthronikhi ziyenza ibe into ekhethwayo, ikakhulukazi ezinhlelweni ezidinga amazinga okushisa aphezulu, amaza aphezulu, namazinga aphezulu amandla.

3. Amadivaysi e-Radio Frequency (RF): Ama-SiC chips nawo asetshenziselwa ukwakha amadivaysi e-RF afana nezikhulisamandla zamandla e-RF, ama-switch-frequency switch, izinzwa ze-RF, nokunye. Ukuzinza okuphezulu kokushisa kwe-SiC, izici zefrikhwensi ephezulu, nokulahlekelwa okuncane kuyenza ilungele izinhlelo ze-RF ezifana nezokuxhumana okungenantambo namasistimu e-radar.

4.Ama-electronics asezingeni eliphezulu: Ngenxa yokusimama kwawo okushisayo nokunwebeka kwezinga lokushisa, ama-wafer e-SiC asetshenziselwa ukukhiqiza imikhiqizo ye-elekthronikhi eklanyelwe ukusebenza ezindaweni ezishisa kakhulu, okuhlanganisa amandla kagesi asezingeni eliphezulu, izinzwa, nezilawuli.

Izindlela eziyinhloko zokusetshenziswa kwe-8-inch silicon carbide substrate 4H-N uhlobo zifaka ukwakhiwa kwezinga lokushisa eliphezulu, imvamisa ephezulu, kanye nezisetshenziswa zikagesi ezinamandla amakhulu, ikakhulukazi emkhakheni wezogesi wezimoto, amandla elanga, ukukhiqizwa kwamandla omoya, ugesi. izitimela, amaseva, izinto zikagesi zasendlini, nezimoto zikagesi. Ngaphezu kwalokho, amadivaysi afana ne-SiC MOSFETs kanye ne-Schottky diode abonise ukusebenza okuhle kakhulu ekushintsheni ama-frequencies, ukuhlolwa kwe-short-circuit, kanye nezinhlelo zokusebenza ze-inverter, eziqhuba ukusetshenziswa kwazo ku-electronics yamandla.

I-XKH ingenziwa ngezifiso ngobukhulu obuhlukahlukene ngokuya ngezidingo zamakhasimende. Izindlela zokwelashwa ezihlukene zokuhwaya kwendawo kanye nokupholishwa ziyatholakala. Izinhlobo ezahlukene ze-doping (ezifana ne-nitrogen doping) ziyasekelwa. I-XKH ingahlinzeka ngosizo lobuchwepheshe nezinsizakalo zokubonisana ukuze kuqinisekiswe ukuthi amakhasimende angakwazi ukuxazulula izinkinga ngesikhathi sokusebenzisa. I-8-inch silicon carbide substrate inezinzuzo eziphawulekayo mayelana nokunciphisa izindleko kanye nomthamo okhulayo, onganciphisa izindleko ze-unit chip cishe ngo-50% uma kuqhathaniswa ne-substrate engu-6-intshi. Ukwengeza, ukushuba okwenyukayo kwe-substrate engu-8-intshi kusiza ukunciphisa ukuchezuka kwejometri kanye nokungqubuzana konqenqema ngesikhathi somshini, ngaleyo ndlela kuthuthukiswe isivuno.