I-wafer ye-SiC silicon carbide engu-8 intshi engu-4H-N uhlobo lwe-0.5mm lwebanga lokukhiqiza locwaningo lwebanga lesisekelo esenziwe ngokwezifiso esicwebezelisiwe

Incazelo emfushane:

I-Silicon carbide (SiC), eyaziwa nangokuthi i-silicon carbide, iyi-semiconductor equkethe i-silicon ne-carbon enefomula yamakhemikhali i-SiC. I-SiC isetshenziswa kumadivayisi kagesi e-semiconductor asebenza emazingeni okushisa aphezulu noma ekucindezelweni okuphezulu, noma kokubili. I-SiC ingenye yezingxenye ezibalulekile ze-LED, iyi-substrate evamile yokukhulisa amadivayisi e-GaN, futhi ingasetshenziswa njengesinki sokushisa sama-LED anamandla aphezulu.
I-substrate ye-silicon carbide engamasentimitha angu-8 iyingxenye ebalulekile yesizukulwane sesithathu sezinto ze-semiconductor, enezici zamandla ensimu aqhekeka kakhulu, ukuhanjiswa kokushisa okuphezulu, izinga eliphezulu lokukhukhuleka kwama-electron, njll., futhi ifaneleka ekwenzeni amadivayisi kagesi ashisa kakhulu, anamandla aphezulu, kanye nanamandla aphezulu. Izinkambu zayo zokusetshenziswa eziyinhloko zifaka phakathi izimoto zikagesi, ezokuthutha ngesitimela, ezokudlulisa amandla aphezulu kanye nokuguqulwa, ama-photovoltaics, ukuxhumana kwe-5G, isitoreji samandla, izindiza, kanye nezikhungo zedatha yamandla e-AI core computing.

Sithumelele i-imeyili

Izici

Izici eziyinhloko zohlobo lwe-silicon carbide substrate engu-8-intshi 4H-N zifaka:

1. Ubuningi be-microtubule: ≤ 0.1/cm² noma ngaphansi, njengokuthi ubuningi be-microtubule buncishiswa kakhulu bube ngaphansi kuka-0.05/cm² kweminye imikhiqizo.
2. Isilinganiso sefomu lekristalu: Isilinganiso sefomu lekristalu esingu-4H-SiC sifinyelela ku-100%.
3. Ukumelana: 0.014~0.028 Ω·cm, noma okuzinzile kakhulu phakathi kuka-0.015-0.025 Ω·cm.
4. Ubulukhuni bomphezulu: Ubuso be-CMP Si Ra≤0.12nm.
5. Ubukhulu: Ngokuvamile 500.0±25μm noma 350.0±25μm.
6. I-engeli yokugoba: 25±5° noma 30±5° ye-A1/A2 kuye ngokuthi ubukhulu buyini.
7. Ubuningi bokuhlukana kwesakhiwo: ≤3000/cm².
8. Ukungcoliswa kwensimbi engaphezulu: ≤1E+11 ama-athomu/cm².
9. Ukugoba kanye nokugoba: ≤ 20μm kanye ≤2μm, ngokulandelana.
Lezi zici zenza ukuthi ama-substrate e-silicon carbide angu-8-intshi abe nenani elibalulekile lokusetshenziswa ekukhiqizweni kwamadivayisi kagesi ashisa kakhulu, avame kakhulu, futhi anamandla aphezulu.

I-wafer ye-silicon carbide engu-8 intshi inezinhlelo zokusebenza eziningana.

1. Amadivayisi kagesi: Ama-wafer e-SiC asetshenziswa kabanzi ekwakhiweni kwamadivayisi kagesi anamandla njenge-MOSFET yamandla (ama-transistors e-metal-oxide-semiconductor field-effect), ama-diode e-Schottky, kanye namamojula okuhlanganisa amandla. Ngenxa yokushisa okuphezulu, i-voltage ephezulu yokuqhekeka, kanye nokuhamba okuphezulu kwama-electron kwe-SiC, la madivayisi angafinyelela ukuguqulwa kwamandla okusebenzayo nokusebenza kahle ezindaweni ezishisa kakhulu, ezine-voltage ephezulu, kanye nemvamisa ephezulu.

2. Amadivayisi e-Optoelectronic: Ama-SiC wafers adlala indima ebalulekile kumadivayisi e-optoelectronic, asetshenziselwa ukukhiqiza ama-photodetector, ama-laser diode, imithombo ye-ultraviolet, njll. Izakhiwo ze-silicon carbide ezisezingeni eliphezulu zokukhanya kanye ne-elekthronikhi zenza kube yinto ekhethwayo, ikakhulukazi ezinhlelweni zokusebenza ezidinga amazinga okushisa aphezulu, amaza aphezulu, kanye namazinga aphezulu amandla.

3. Amadivayisi E-Radio Frequency (RF): Ama-chip e-SiC asetshenziselwa futhi ukukhiqiza amadivayisi e-RF afana nama-RF power amplifiers, ama-high-frequency switch, ama-RF sensors, nokuningi. Ukuzinza okuphezulu kokushisa kwe-SiC, izici ze-high-frequency, kanye nokulahlekelwa okuphansi kwenza kube kuhle kakhulu ezinhlelweni ze-RF ezifana nokuxhumana okungenantambo kanye nezinhlelo ze-radar.

4. Ama-elekthronikhi ashisa kakhulu: Ngenxa yokuqina kwawo okuphezulu kokushisa kanye nokuqina kokushisa, ama-wafer e-SiC asetshenziselwa ukukhiqiza imikhiqizo ye-elekthronikhi eyenzelwe ukusebenza ezindaweni ezishisa kakhulu, okuhlanganisa ama-elekthronikhi anamandla okushisa aphezulu, izinzwa, kanye nabalawuli.

Izindlela eziyinhloko zokusetshenziswa kohlobo lwe-silicon carbide substrate engu-8-intshi engu-4H-N zifaka phakathi ukukhiqizwa kwamadivayisi kagesi ashisa kakhulu, avame kakhulu, kanye nanamandla aphezulu, ikakhulukazi emikhakheni ye-elekthronikhi yezimoto, amandla elanga, ukukhiqizwa kwamandla omoya, amalocomotive kagesi, amaseva, izinto zikagesi zasekhaya, kanye nezimoto zikagesi. Ngaphezu kwalokho, amadivayisi afana nama-SiC MOSFET kanye nama-Schottky diodes abonise ukusebenza okuhle kakhulu kuma-switching frequency, izivivinyo ze-short-circuit, kanye nezinhlelo zokusebenza ze-inverter, okuqhuba ukusetshenziswa kwawo kuma-electronics kagesi.

I-XKH ingenziwa ngokwezifiso ngobukhulu obuhlukene ngokuya ngezidingo zamakhasimende. Ukwelashwa okuhlukile kokulukhuni kanye nokupholisha kuyatholakala. Izinhlobo ezahlukene zokusebenzisa i-doping (njengokusebenzisa i-nitrogen doping) ziyasekelwa. I-XKH inganikeza ukwesekwa kobuchwepheshe kanye nezinsizakalo zokubonisana ukuqinisekisa ukuthi amakhasimende angakwazi ukuxazulula izinkinga enkambisweni yokusebenzisa. I-substrate ye-silicon carbide engamasentimitha angu-8 inezinzuzo ezibalulekile maqondana nokunciphisa izindleko kanye nomthamo owandisiwe, okunganciphisa izindleko ze-unit chip cishe ngo-50% uma kuqhathaniswa ne-substrate engamasentimitha angu-6. Ngaphezu kwalokho, ubukhulu obandisiwe be-substrate engamasentimitha angu-8 kusiza ukunciphisa ukuphambuka kwejometri kanye nokugoba konqenqema ngesikhathi sokucubungula, ngaleyo ndlela kuthuthukiswe isivuno.