8 Intshi Lithium Niobate Wafer LiNbO3 LN isicwecwe
Ulwazi Oluningiliziwe
| Ububanzi | 200±0.2mm |
| flatness enkulu | 57.5mm, Notch |
| Ukuqondisa | 128Y-Sika, X-Sika, Z-Sika |
| Ubukhulu | 0.5±0.025mm, 1.0±0.025mm |
| Ubuso | I-DSP ne-SSP |
| I-TTV | <5µm |
| KHOTHAMA | ± (20µm ~40um) |
| I-Wap | <= 20µm ~ 50µm |
| I-LTV (5mmx5mm) | <1.5 um |
| I-PLTV(<0.5um) | ≥98% (5mm*5mm) enomkhawulo ongu-2mm engabaliwe |
| Ra | Ra<=5A |
| Scratch & Dig (S/D) | 20/10, 40/20, 60/40 |
| Umphetho | Hlangana ne-SEMI M1.2@nge-GC800#.ejwayelekile ngohlobo lwe-C |
Ukucaciswa okuqondile
Ububanzi: 8 amayintshi (cishe 200mm)
Ubukhulu: Ubukhulu obujwayelekile obujwayelekile busukela ku-0.5mm kuye ku-1mm.Okunye ukushuba kungenziwa ngokwezifiso ngokuya ngezidingo ezithile
I-Crystal orientation: I-crystal orientation eyinhloko evamile yi-128Y-cut, i-Z-cut kanye ne-X-cut crystal orientation, nokunye ukuma kwekristalu kunganikezwa ngokuya ngohlelo lokusebenza oluthile.
Izinzuzo Zosayizi: Ama-wafers we-serrata we-carp angama-intshi angu-8 anezinzuzo eziningana zosayizi ngaphezu kwamawafa amancane:
Indawo enkulu: Uma kuqhathaniswa namawafa angama-intshi angu-6 noma angu-4-intshi, ama-wafers angu-8-intshi ahlinzeka ngendawo engaphezulu futhi angakwazi ukuhlalisa amadivaysi amaningi namasekhethi ahlanganisiwe, okuholela ekwandeni kokusebenza kahle kokukhiqiza kanye nesivuno.
Ukuminyana okuphezulu: Ngokusebenzisa ama-wafer angu-8-intshi, amadivaysi amaningi nezingxenye zingenziwa endaweni efanayo, okwandisa ukuhlanganiswa nokuminyana kwedivayisi, okubuye kuthuthukise ukusebenza kwedivayisi.
Ukungaguquguquki okungcono: Amawafa amakhulu anokuvumelana okungcono enqubweni yokukhiqiza, okusiza ukunciphisa ukuhlukahluka enqubweni yokukhiqiza futhi kuthuthukise ukwethembeka nokuvumelana komkhiqizo.
Amawafa angu-8-intshi we-L kanye ne-LN anobubanzi obufanayo nama-silicon wafers ajwayelekile futhi kulula ukubopha.Njengomsebenzi ophezulu "wesihlungi se-SAW esihlanganisiwe" esikwazi ukuphatha amabhendi amafrikhwensi aphezulu.
Umdwebo onemininingwane
