2 inch 50.8mm Sapphire Wafer C-Plane M-plane R-plane R-plane A-plane Ubukhulu 350um 430um 500um

2 intshi 50.8mm Sapphire Wafer C-Plane M-plane R-plane R-plane A-plane Ubukhulu 350um 430um 500um Isithombe Esifakiwe

Incazelo emfushane:

I-Sapphire iyinhlanganisela eyingqayizivele yezinto ezibonakalayo, zamakhemikhali nezokubona, eziyenza imelane nezinga lokushisa eliphezulu, ukushaqeka okushisayo, ukuguguleka kwamanzi nesihlabathi, nokuklwebheka.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ukucaciswa kwama-orientation ahlukene

Ukuqondisa	I-C(0001)-I-eksisi		I-R(1-102)-I-eksisi		I-M(10-10) -I-eksisi	I-A(11-20)-I-eksisi
Impahla ebonakalayo	I-axis ye-C inokukhanya kwekristalu, kanti amanye ama-ax anokukhanya okungekuhle.I-Plane C iyisicaba, kungcono ukusikwa.		Indiza engu-R ilukhuni kuno-A.		Indiza engu-M inyathelwe ijika, akulula ukuyisika, ukuyisika kalula.	Ukuqina kwendiza ye-A kuphakeme kakhulu kunokwendiza ye-C, ebonakaliswa ukumelana nokugqoka, ukumelana nokuklwebheka kanye nokuqina okuphezulu;I-Side A-plane iyindiza ye-zigzag, okulula ukuyisika;
Izinhlelo zokusebenza	Ama-substrates esafire agxile ku-C asetshenziselwa ukukhulisa amafilimu afakwe i-III-V kanye ne-II-VI, njenge-gallium nitride, engakhiqiza imikhiqizo ye-LED eluhlaza okwesibhakabhaka, ama-laser diode, kanye nezicelo zomtshina we-infrared. Lokhu kungenxa yokuthi inqubo yokukhula kwekristalu yesafire eduze kwe-C-axis ivuthiwe, izindleko ziphansi, izakhiwo ezingokwenyama namakhemikhali zizinzile, futhi ubuchwepheshe be-epitaxy endizeni ye-C buvuthiwe futhi buzinzile.		Ukukhula kwe-substrate okugxile ku-R kwama-silicon extrasystals afakiwe ahlukile, asetshenziswa kumasekethe ahlanganisiwe we-microelectronics. Ngaphezu kwalokho, amasekethe ahlanganisiwe anesivinini esikhulu kanye nezinzwa zokucindezela nazo zingakhiwa ohlelweni lokukhiqizwa kwefilimu yokukhula kwe-silicon ye-epitaxial.I-substrate yohlobo lwe-R ingasetshenziswa futhi ekukhiqizeni umthofu, ezinye izingxenye ze-superconducting, ukumelana nokumelana okuphezulu, i-gallium arsenide.		Isetshenziswa kakhulu ukukhulisa amafilimu e-GaN epitaxial angeyona i-polar/semi-polar ukuthuthukisa ukusebenza kahle okukhanyayo.	Okuqondiswe ku-A ku-substrate kukhiqiza imvume efanayo/okumaphakathi, futhi izinga eliphezulu lokwahlukanisa lisetshenziswa kubuchwepheshe be-hybrid microelectronics.Ama-superconductors okushisa aphezulu angakhiqizwa kusuka ku-A-base elongated crystals.
Umthamo wokucubungula	I-Pattern Sapphire Substrate (PSS) : Ngendlela Yokukhula noma Yokuhlanganisa, amaphethini we-nanoscale avamile we-microstructure aklanywa futhi enziwa endaweni engaphansi yesafire ukuze kulawulwe indlela yokuphuma kokukhanya kwe-LED, futhi kuncishiswe amaphutha okuhlukanisa phakathi kwe-GaN ekhula endaweni engaphansi yesafire. , ithuthukise ikhwalithi ye-epitaxy, futhi ithuthukise ukusebenza kahle kwe-quantum yangaphakathi ye-LED futhi yandise ukusebenza kahle kokukhipha ukukhanya. Ngaphezu kwalokho, isafire prism, isibuko, ilensi, umgodi, Isigaxa kanye nezinye izingxenye zesakhiwo kungenziwa egcizelele ngokuvumelana nezidingo zamakhasimende.
Isimemezelo sempahla	Ukuminyana	Ukuqina	ncibilika iphuzu	Inkomba ye-refractive (ebonakalayo ne-infrared)	I-Transmittance (DSP)	I-Dielectric njalo
Isimemezelo sempahla	3.98g/cm3	9(mohs)	2053℃	1.762~1.770	≥85%	11.58@300K ku-axis ye-C(9.4 eksisini ye-A)

Umdwebo onemininingwane

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