8 Intshi Lithium Niobate Wafer LiNbO3 LN isicwecwe

8 Intshi ye-Lithium Niobate Wafer LiNbO3 LN wafer Isithombe Esifakiwe

Incazelo emfushane:

Ama-wafers e-lithium niobate angama-8-intshi asetshenziswa kabanzi kumadivayisi we-optoelectronic namasekethe ahlanganisiwe. Uma kuqhathaniswa namawafa amancane, amawafa e-lithium niobate angu-8 anezinzuzo ezisobala. Okokuqala, inendawo enkulu futhi ingakwazi ukuhlalisa amadivaysi amaningi namasekhethi ahlanganisiwe, ithuthukise ukusebenza kahle kokukhiqiza kanye nokuphumayo. Okwesibili, amawafa amakhulu angafinyelela ukuminyana okuphezulu kwedivayisi, athuthukise ukuhlanganiswa nokusebenza kwedivayisi. Ngaphezu kwalokho, ama-wafers we-lithium niobate angu-8-intshi ahlinzeka ngokungaguquguquki kangcono, anciphisa ukuhlukahluka kwenqubo yokukhiqiza futhi athuthukise ukuthembeka komkhiqizo nokuvumelana.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ulwazi Oluningiliziwe

Ububanzi	200±0.2mm
flatness enkulu	57.5mm, Notch
Ukuqondisa	128Y-Sika, X-Sika, Z-Sika
Ubukhulu	0.5±0.025mm, 1.0±0.025mm
Ubuso	I-DSP ne-SSP
I-TTV	<5µm
KHOTHAMA	± (20µm ~40um)
I-Wap	<= 20µm ~ 50µm
I-LTV (5mmx5mm)	<1.5 um
I-PLTV(<0.5um)	≥98% (5mm*5mm) enomkhawulo ongu-2mm engabaliwe
Ra	Ra<=5A
Scratch & Dig (S/D)	20/10, 40/20, 60/40
Umphetho	Hlangana ne-SEMI M1.2@nge-GC800#. ejwayelekile ngohlobo lwe-C

Ukucaciswa okuqondile

Ububanzi: 8 amayintshi (cishe 200mm)

Ubukhulu: Ubukhulu obujwayelekile obujwayelekile busukela ku-0.5mm kuye ku-1mm. Okunye ukushuba kungenziwa ngokwezifiso ngokuya ngezidingo ezithile

I-Crystal orientation: I-crystal orientation eyinhloko evamile yi-128Y-cut, i-Z-cut kanye ne-X-cut crystal orientation, nokunye ukuma kwekristalu kunganikezwa ngokuya ngohlelo lokusebenza oluthile.

Izinzuzo Zosayizi: Ama-wafers we-serrata we-carp angama-intshi angu-8 anezinzuzo eziningana zosayizi ngaphezu kwamawafa amancane:

Indawo enkulu: Uma kuqhathaniswa namawafa angama-intshi angu-6 noma angu-4-intshi, ama-wafers angu-8-intshi ahlinzeka ngendawo engaphezulu futhi angakwazi ukuhlalisa amadivaysi amaningi namasekhethi ahlanganisiwe, okuholela ekwandeni kokusebenza kahle kokukhiqiza kanye nesivuno.

Ukuminyana okuphezulu: Ngokusebenzisa ama-wafer angu-8-intshi, amadivaysi amaningi nezingxenye zingenziwa endaweni efanayo, okwandisa ukuhlanganiswa nokuminyana kwedivayisi, okubuye kuthuthukise ukusebenza kwedivayisi.

Ukungaguquguquki okungcono: Amawafa amakhulu anokuvumelana okungcono enqubweni yokukhiqiza, okusiza ukunciphisa ukuhlukahluka enqubweni yokukhiqiza futhi kuthuthukise ukwethembeka nokuvumelana komkhiqizo.

Ama-wafer angu-8-intshi L kanye ne-LN anobubanzi obufanayo nama-silicon wafers ajwayelekile futhi kulula ukubopha. Njengomsebenzi ophezulu "wesihlungi se-SAW esihlanganisiwe" esikwazi ukuphatha amabhendi amafrikhwensi aphezulu.