Ama-Wafers e-SiC e-Silicon Carbide angu-6 intshi angu-150mm angu-4H-N ohlobo lwe-MOS noma i-SBD Production Research kanye ne-Dummy grade

Ama-Silicon Carbide SiC Wafers angu-6 intshi angu-150mm uhlobo lwe-4H-N locwaningo Lokukhiqiza lwe-MOS noma lwe-SBD kanye ne-Dummy grade Isithombe Esifakiwe

Incazelo emfushane:

I-substrate ye-silicon carbide single crystal engu-6 intshi iyinto esebenza kahle kakhulu enezakhiwo zomzimba nezamakhemikhali ezinhle kakhulu. Yenziwe ngezinto ze-silicon carbide single crystal ezihlanzekile kakhulu, ibonisa ukuhanjiswa kokushisa okuphezulu, ukuzinza komshini, kanye nokumelana nokushisa okuphezulu. Le substrate, eyenziwe ngezinqubo zokukhiqiza ezinembile kanye nezinto ezisezingeni eliphezulu, isibe yinto ekhethwayo yokwenza amadivayisi kagesi asebenza kahle kakhulu emikhakheni eyahlukahlukene.

Sithumelele i-imeyili

Izici

Izinkambu Zohlelo Lokusebenza

I-substrate yekristalu eyodwa ye-silicon carbide engamasentimitha ayi-6 idlala indima ebalulekile ezimbonini eziningi. Okokuqala, isetshenziswa kabanzi embonini ye-semiconductor ekwakhiweni kwamadivayisi kagesi anamandla aphezulu njenge-transistors yamandla, amasekethe ahlanganisiwe, namamojula wamandla. Ukushisa kwayo okuphezulu kanye nokumelana nokushisa okuphezulu kuvumela ukushabalaliswa kokushisa okungcono, okuholela ekusebenzeni kahle okuthuthukisiwe kanye nokuthembeka. Okwesibili, ama-wafer e-silicon carbide abalulekile emikhakheni yocwaningo ekuthuthukiseni izinto ezintsha namadivayisi. Ngaphezu kwalokho, i-wafer ye-silicon carbide ithola ukusetshenziswa okubanzi emkhakheni we-optoelectronics, okuhlanganisa ukukhiqizwa kwama-LED nama-diode e-laser.

Imininingwane Yomkhiqizo

I-substrate yekristalu eyodwa ye-silicon carbide engamasentimitha angu-6 inobubanzi obungamasentimitha angu-6 (cishe amamilimitha angu-152.4). Ubulukhuni bomphezulu bungu-Ra < 0.5 nm, kanti ubukhulu bungu-600 ± 25 μm. I-substrate ingenziwa ngokwezifiso nge-N-type noma i-P-type conductivity, ngokusekelwe ezidingweni zamakhasimende. Ngaphezu kwalokho, ibonisa ukuzinza okumangalisayo kwemishini, ekwazi ukumelana nengcindezi nokudlidliza.

Ububanzi		150±2.0mm（6intshi）
Ubukhulu		350 μm±25μm
Ukuqondiswa		Ku-axis: <0001>±0.5°		I-axis evaliwe：4.0° ibheke ku-1120±0.5°
Uhlobo lwe-Polytype		4H
Ukumelana (Ω·cm)	4H-N	0.015~0.028 Ω·cm/0.015~0.025ohm·cm
	4/6H-SI	>1E5
Ukuma okuyisisekelo okuyisicaba		{10-10}±5.0°
Ubude obuyisicaba obuyinhloko (mm)		47.5 mm±2.5 mm
Umphetho		I-Chamfer
I-TTV/Umnsalo/I-Warp (um)		≤15 /≤40 /≤60
I-AFM Front (Si-face)		I-Polish Ra≤1 nm
		I-CMP Ra≤0.5 nm
I-LTV		≤3μm(10mm*10mm)	≤5μm(10mm*10mm)		≤10μm(10mm*10mm)
I-TTV		≤5μm	≤10μm		≤15μm
Ikhasi/imigodi/imifantu/ukungcola/amabala/ukwahlukana okuwolintshi		Akukho	Akukho		Akukho
ama-indent		Akukho	Akukho		Akukho

I-substrate yekristalu eyodwa ye-silicon carbide engamasentimitha ayi-6 iyinto esebenza kahle kakhulu esetshenziswa kabanzi embonini ye-semiconductor, ucwaningo, kanye ne-optoelectronics. Inikeza ukuhanjiswa kokushisa okuhle kakhulu, ukuzinza komshini, kanye nokumelana nokushisa okuphezulu, okwenza ifaneleke ekwakhiweni kwamadivayisi kagesi anamandla aphezulu kanye nocwaningo lwezinto ezintsha. Sinikeza imininingwane ehlukahlukene kanye nezinketho zokwenza ngokwezifiso ukuze kuhlangatshezwane nezidingo zamakhasimende ezahlukahlukene.Xhumana nathi ukuthola imininingwane eyengeziwe ngama-wafer e-silicon carbide!