4inch Semi-insulting SiC wafers HPSI SiC substrate Prime Production grade

Incazelo emfushane:

Ipuleti lokupholisha le-silicon carbide elingu-4-inch high-purity semi-insulated double sided polishing plate lisetshenziswa kakhulu ekuxhumaneni kwe-5G nakweminye imikhakha, ngezinzuzo zokuthuthukisa ububanzi befrikhwensi yomsakazo, ukuqashelwa kwebanga elide kakhulu, ukulwa nokuphazamiseka, isivinini esikhulu. , ukudluliswa kolwazi olunomthamo omkhulu nezinye izinhlelo zokusebenza, futhi kuthathwa njengengxenye ekahle yokwenza amadivaysi amandla e-microwave.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ukucaciswa Komkhiqizo

I-Silicon carbide (i-SiC) iyinhlanganisela ye-semiconductor impahla eyakhiwe izakhi ze-carbon ne-silicon, futhi ingenye yezinto ezikahle zokwenza amadivaysi ashisa kakhulu, ama-high-frequency, amandla aphezulu kanye namandla kagesi aphezulu. Uma kuqhathaniswa nempahla ye-silicon yendabuko (Si), ububanzi bebhande obunqatshelwe be-silicon carbide buphindwe kathathu kune-silicon; i-thermal conductivity izikhathi ezingu-4-5 kune-silicon; i-voltage yokuwohloka iphindwe izikhathi ezingu-8-10 kune-silicon; futhi izinga lokukhukhuleka kwe-electron liphindwe izikhathi ezingu-2-3 kune-silicon, ehlangabezana nezidingo zemboni yesimanje yamandla aphezulu, amandla kagesi aphezulu, kanye ne-high-frequency, futhi isetshenziselwa kakhulu ukwenza isivinini esikhulu, imvamisa, izingxenye ze-elekthronikhi ezinamandla amakhulu nezikhipha ukukhanya, kanye nezindawo zayo zokufaka isicelo ezansi nomfula zifaka igridi ehlakaniphile, izimoto zamandla amasha, amandla omoya e-photovoltaic, ukuxhumana kwe-5G, njll. wemishini kagesi, ama-silicon carbide diode nama-MOSFET aseqalile ukusetshenziswa ngokwentengiso.

Izinzuzo zama-wafers we-SiC/i-SiC substrate

Ukumelana nokushisa okuphezulu. Ububanzi bebhendi obunqatshelwe be-silicon carbide buphindwe izikhathi ezingu-2-3 kune-silicon, ngakho-ke ama-electron mancane amathuba okuthi agxume emazingeni okushisa aphezulu futhi angakwazi ukumelana namazinga okushisa aphezulu okusebenza, futhi ukushisa kwe-silicon carbide izikhathi ezingu-4-5 kune-silicon, okwenza kulula ukukhipha ukushisa ocingweni futhi ivumele izinga lokushisa elinomkhawulo ophezulu wokusebenza. Izici zezinga eliphezulu lokushisa zingakhuphula kakhulu ukuminyana kwamandla, kuyilapho zinciphisa izidingo zesistimu yokukhipha ukushisa, zenze itheminali ibe lula futhi ibe mincane.

Ukumelana ne-voltage ephezulu. Amandla ensimu yokuwohloka kwe-silicon carbide aphindwe ka-10 kunawe-silicon, okuyenza ikwazi ukumelana nama-voltage aphezulu, okuyenza ifaneleke kakhulu kumadivayisi asebenzisa amandla kagesi aphezulu.

Ukumelana ne-high-frequency. I-Silicon carbide inezinga eliphindwe kabili le-electron drift rate ye-silicon, okuholela ekutheni amadivayisi ayo enqubweni yokuvala shaqa angabikho kumkhuba wamanje wokudonsa, ingathuthukisa ngempumelelo imvamisa yokushintsha idivayisi, ukuze kuzuzwe ukuncishiswa kwedivayisi.

Ukulahlekelwa amandla aphansi. I-Silicon carbide inokumelana okuphansi kakhulu uma kuqhathaniswa nezinto ze-silicon, ukulahlekelwa kwe-conduction ephansi; ngesikhathi esifanayo, umkhawulokudonsa ophezulu we-silicon carbide unciphisa kakhulu ukuvuza kwamanje, ukulahlekelwa kwamandla; ngaphezu kwalokho, amadivaysi e-silicon carbide enqubweni yokuvala shaqa awekho kumkhuba wamanje wokudonsa, ukulahlekelwa kokushintsha okuphansi.