Ama-wafer e-SiC angamasentimitha angu-4 angenamahloni amancane e-HPSI SiC substrate Ibanga Lokukhiqiza Eliphezulu

Ama-wafer e-SiC angamasentimitha angu-4 angcolile kancane, i-HPSI SiC substrate, izinga lokukhiqiza eliyinhloko, Isithombe Esivelele

Incazelo emfushane:

Ipuleti lokupholisha le-silicon carbide elinobumsulwa obuyi-intshi ezingu-4 lisetshenziswa kakhulu ekuxhumaneni kwe-5G nakwezinye izinkambu, ngezinzuzo zokuthuthukisa ububanzi bemvamisa yomsakazo, ukuqashelwa kwebanga elide kakhulu, ukulwa nokuphazamiseka, ukudluliswa kolwazi ngesivinini esikhulu, okunamandla amakhulu kanye nezinye izinhlelo zokusebenza, futhi libhekwa njengesisekelo esifanele sokwenza amadivayisi kagesi e-microwave.

Sithumelele i-imeyili

Izici

Ukucaciswa Komkhiqizo

I-Silicon carbide (SiC) iyinto ehlanganisiwe ye-semiconductor eyakhiwe izakhi ze-carbon ne-silicon, futhi ingenye yezinto ezifanelekile zokwenza amadivayisi anokushisa okuphezulu, imvamisa ephezulu, amandla aphezulu kanye namadivayisi ane-voltage ephezulu. Uma kuqhathaniswa nezinto ze-silicon zendabuko (Si), ububanzi bebhendi obungavunyelwe be-silicon carbide buphindwe kathathu kune-silicon; ukuhanjiswa kokushisa kuphindwe ka-4-5 kune-silicon; i-voltage yokuqhekeka iphindwe ka-8-10 kune-silicon; kanti izinga lokukhukhuleka kwe-electron saturation liphindwe ka-2-3 kune-silicon, okuhlangabezana nezidingo zomkhakha wanamuhla zamandla aphezulu, i-voltage ephezulu, kanye nemvamisa ephezulu, futhi isetshenziswa kakhulu ukwenza izingxenye ze-elekthronikhi ezinejubane eliphezulu, imvamisa ephezulu, amandla aphezulu kanye nokukhanya, futhi izindawo zayo zokusetshenziswa ezingezansi zifaka i-smart grid, izimoto zamandla amasha, amandla omoya e-photovoltaic, ukuxhumana kwe-5G, njll. Emkhakheni wamadivayisi wamandla, ama-silicon carbide diodes nama-MOSFET aseqalile ukusetshenziswa kwezentengiselwano.

Izinzuzo zama-wafer e-SiC/i-substrate ye-SiC

Ukumelana nokushisa okuphezulu. Ububanzi bebhendi engavunyelwe ye-silicon carbide buphindwe kabili kuya kathathu kunobe-silicon, ngakho-ke ama-electron awakwazi ukugxuma emazingeni okushisa aphezulu futhi angamelana nokushisa okuphezulu kokusebenza, kanti ukuhanjiswa kokushisa kwe-silicon carbide kuphindwe kane kuya kahlanu kunokwe-silicon, okwenza kube lula ukusabalalisa ukushisa kudivayisi futhi kuvumele izinga lokushisa lokusebenza elikhawulelwe kakhulu. Izici zokushisa okuphezulu zingakhulisa kakhulu ubuningi bamandla, ngenkathi kunciphisa izidingo zesistimu yokusabalalisa ukushisa, okwenza i-terminal ibe lula futhi ibe mincane.

Ukumelana nogesi ophezulu. Amandla ensimu yokuqhekeka kwe-silicon carbide aphindwe kayishumi kune-silicon, okwenza ikwazi ukumelana nogesi ophezulu, okwenza ifaneleke kakhulu kumadivayisi anogesi ophezulu.

Ukumelana nemvamisa ephezulu. I-silicon carbide inesilinganiso sokukhukhuleka kwama-electron okugcwala okuphindwe kabili kune-silicon, okwenza ukuthi amadivayisi ayo enkambisweni yokuvala awekho esimweni samanje sokuhudula, ingathuthukisa ngempumelelo imvamisa yokushintsha idivayisi, ukuze kufezwe ukwenziwa kwedivayisi ibe yincane.

Ukulahleka kwamandla aphansi. I-silicon carbide inokumelana okuphansi kakhulu uma kuqhathaniswa nezinto ze-silicon, ukulahleka kokuqhuba okuphansi; ngesikhathi esifanayo, i-bandwidth ephezulu ye-silicon carbide inciphisa kakhulu ukuvuza kwamanje, ukulahleka kwamandla; ngaphezu kwalokho, amadivayisi e-silicon carbide enqubweni yokuvala awakho esimweni sokuhudula kwamanje, ukulahleka kokushintsha okuphansi.