I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ubukhulu

I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ukujiya Isithombe Esifakiwe

Incazelo emfushane:

Ama-wafer e-silicon carbide asetshenziswa kumadivayisi kagesi afana nama-power diode, ama-MOSFET, amadivayisi e-microwave anamandla aphezulu, kanye nama-RF transistors, okwenza kube lula ukuguqulwa kwamandla okuphumelelayo kanye nokuphathwa kwamandla. Ama-wafer e-SiC kanye nama-substrate asetshenziswa futhi kuma-electronics ezimoto, izinhlelo zezindiza, kanye nobuchwepheshe bamandla avuselelekayo.

Sithumelele i-imeyili

Izici

Uzikhetha Kanjani Izingcezu Ze-Silicon Carbide kanye Nezingcezu Ze-SiC?

Uma ukhetha ama-wafer e-silicon carbide (SiC) kanye nama-substrate, kunezici eziningana okufanele uzicabangele. Nazi ezinye zezindlela ezibalulekile:

Uhlobo Lwezinto: Thola uhlobo lwezinto ze-SiC ezifanela uhlelo lwakho lokusebenza, njenge-4H-SiC noma i-6H-SiC. Isakhiwo sekristalu esivame ukusetshenziswa kakhulu yi-4H-SiC.

Uhlobo Lokusebenzisa Imithi: Nquma ukuthi udinga i-substrate ye-SiC efakwe i-doped noma engafakwanga. Izinhlobo ezivamile zokusebenzisa i-doped yi-N-type (n-doped) noma i-P-type (p-doped), kuye ngezidingo zakho ezithile.

Ikhwalithi Yekristalu: Hlola ikhwalithi yekristalu yama-wafer noma ama-substrate e-SiC. Ikhwalithi efiselekayo inqunywa yimingcele efana nenani lamaphutha, ukuma kwekristalu, kanye nobulukhuni bomphezulu.

Ububanzi be-Wafer: Khetha usayizi we-wafer ofanele ngokusekelwe kuhlelo lwakho lokusebenza. Osayizi abavamile bahlanganisa amasentimitha angu-2, amasentimitha angu-3, amasentimitha angu-4, namasentimitha angu-6. Uma ububanzi bukhulu, kulapho ungathola khona isivuno esikhulu nge-wafer ngayinye.

Ubukhulu: Cabanga ngobukhulu obufunwayo bama-wafer noma ama-substrate e-SiC. Izinketho ezijwayelekile zobukhulu zisukela kuma-micrometer ambalwa kuya kuma-micrometer angamakhulu amaningana.

Ukuqondiswa: Nquma ukuqondiswa kwekristalografi okuhambisana nezidingo zohlelo lwakho lokusebenza. Ukuqondiswa okuvamile kufaka phakathi i-(0001) ye-4H-SiC kanye ne-(0001) noma i-(0001̅) ye-6H-SiC.

Ukuqeda Okungaphezulu: Hlola ukuqeda okungaphezulu kwama-wafer noma ama-substrate e-SiC. Ubuso kufanele bube bushelelezi, bucwebezeliswe, futhi bungabi nemihuzuko noma ukungcola.

Idumela Lomhlinzeki: Khetha umhlinzeki othembekile onolwazi olukhulu ekukhiqizeni ama-wafer nama-substrate e-SiC asezingeni eliphezulu. Cabangela izici ezifana namakhono okukhiqiza, ukulawulwa kwekhwalithi, kanye nokubuyekezwa kwamakhasimende.

Izindleko: Cabangela imiphumela yezindleko, okuhlanganisa intengo nge-wafer ngayinye noma i-substrate kanye nanoma yiziphi izindleko ezengeziwe zokwenza ngokwezifiso.

Kubalulekile ukuhlola ngokucophelela lezi zici nokubonisana nochwepheshe bemboni noma abaphakeli ukuqinisekisa ukuthi ama-wafers nama-substrate e-SiC akhethiwe ahlangabezana nezidingo zakho ezithile zokufaka isicelo.