I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ukujiya

I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Ibanga lokucwaninga elingu-500um ukujiya kwesithombe esifakiwe

Incazelo emfushane:

Ama-wafers e-silicon carbide asetshenziswa kuzinto zikagesi ezifana nama-diode amandla, ama-MOSFET, amadivaysi e-microwave enamandla amakhulu, nama-RF transistors, okwenza ukuguqulwa kwamandla okusebenzayo nokuphathwa kwamandla. Ama-wafer e-SiC nama-substrates aphinde athole ukusetshenziswa kugesi wezimoto, izinhlelo ze-aerospace, kanye nobuchwepheshe bamandla avuselelekayo.

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Uwakhetha Kanjani Ama-Silicon Carbide Wafers & SiC Substrates?

Lapho ukhetha ama-wafers we-silicon carbide (SiC) nama-substrates, kunezici ezimbalwa okufanele zicatshangelwe. Nazi ezinye izindlela ezibalulekile:

Uhlobo Lwezinto: Nquma uhlobo lwezinto ze-SiC ezifanele uhlelo lwakho lokusebenza, njenge-4H-SiC noma i-6H-SiC. Isakhiwo sekristalu esisetshenziswa kakhulu yi-4H-SiC.

Uhlobo Lwe-Doping: Nquma ukuthi udinga i-SiC substrate ene-doped noma ehlehlisiwe. Izinhlobo ze-doping ezivamile uhlobo lwe-N (n-doped) noma uhlobo lwe-P (p-doped), kuye ngezidingo zakho ezithile.

Ikhwalithi Yekristalu: Hlola ikhwalithi yekristalu yamawafa e-SiC noma ama-substrates. Ikhwalithi efiswayo inqunywa amapharamitha afana nenani leziphambeko, umumo we-crystallographic, kanye nama-roughness surface.

I-Wafer Diameter: Khetha usayizi we-wafer ofanele ngokusekelwe kuhlelo lwakho lokusebenza. Osayizi abajwayelekile bahlanganisa 2 amayintshi, 3 amayintshi, 4 amayintshi, futhi 6 amayintshi. Uma ubukhulu be-diameter bukhulu, yilapho ungathola isivuno esiningi nge-wafer ngayinye.

Ubukhulu: Cabangela ukujiya okufunayo kwamawafa e-SiC noma ama-substrates. Izinketho zokujiya ezijwayelekile zisuka kuma-micrometer ambalwa kuye kuma-micrometer angamakhulu ambalwa.

Umumo: Thola umumo we-crystallographic oqondana nezidingo zohlelo lwakho lokusebenza. Imikhombandlela evamile ihlanganisa (0001) ye-4H-SiC kanye (0001) noma (0001̅) ye-6H-SiC.

I-Surface Finish: Hlola ukuqedwa okungaphezulu kwamawafa e-SiC noma ama-substrates. Ingaphezulu kufanele libe bushelelezi, lipholishwe, futhi lingabi nemihuzuko noma ukungcola.

Isithunzi Somhlinzeki: Khetha umphakeli othembekile onolwazi olunzulu ekukhiqizeni amawafa e-SiC ekhwalithi ephezulu nama-substrates. Cabangela izici ezifana namakhono okukhiqiza, ukulawula ikhwalithi, nokubuyekezwa kwamakhasimende.

Izindleko: Cabangela izindleko, okuhlanganisa intengo ngewafa ngayinye noma i-substrate kanye nanoma yiziphi izindleko ezengeziwe zokwenza ngokwezifiso.

Kubalulekile ukuhlola ngokucophelela lezi zici futhi uxhumane nochwepheshe bemboni noma abahlinzeki ukuze uqinisekise ukuthi ama-wafer e-SiC akhethiwe nama-substrates ahlangabezana nezidingo zakho ezithile zohlelo lokusebenza.