I-wafer ye-substrate ye-Al2O3 engu-99.999% engu-Dia101.6×0.65mmt enobude obuyisicaba obuyinhloko.

Incazelo emfushane:

I-wafer yesafire engamasentimitha angu-4 (cishe angu-101.6 mm) iyi-wafer eyenziwe ngezinto zesafire enobubanzi obungamasentimitha angu-4.

Sithumelele i-imeyili

Izici

Incazelo

Imininingwane evamile yama-wafers e-sapphire angu-4-intshi yethulwa kanje:

Ubukhulu: Ubukhulu be-common sapphire wafers buphakathi kuka-0.2 mm no-2 mm, futhi ubukhulu obuthile bungenziwa ngokwezifiso ngokwezidingo zamakhasimende.

Umngcele Wokubekwa: Ngokuvamile kunengxenye encane emaphethelweni e-wafer ebizwa ngokuthi "umngcele wokubekwa" evikela ubuso nomngcele we-wafer, futhi ngokuvamile ayiguquki.

Ukulungiswa kwendawo: Ama-wafer avamile e-sapphire ayagaywa ngomshini futhi acwebezelwe ngamakhemikhali ukuze kusheleleke indawo.

Izakhiwo Zomphezulu: Ubuso be-sapphire wafers buvame ukuba nezakhiwo ezinhle zokukhanya, njengokukhanya okuphansi kanye ne-refractive index ephansi, ukuze kuthuthukiswe ukusebenza kwedivayisi.

Izicelo

● Isisekelo sokukhula samakhemikhali e-III-V kanye ne-II-VI

● Izinto zikagesi kanye ne-optoelectronics

● Izinhlelo zokusebenza ze-IR

● I-Silicon On Sapphire Integrated Circuit (SOS)

● Isekethe Ehlanganisiwe Yemvamisa Yomsakazo (RFIC)

Imininingwane

Into	Ama-wafer e-Sapphire angu-4-intshi (0001) angu-650μm
Izinto Zekristalu	99,999%, Ukuhlanzeka Okuphezulu, i-Monocrystalline Al2O3
Ibanga	I-Prime, i-Epi-Ready
Ukuqondiswa Komphezulu	Indiza ye-C(0001)
	Indiza engu-C engaphandle kwe-engeli ebheke ku-M-axis 0.2 +/- 0.1°
Ububanzi	100.0 mm +/- 0.1 mm
Ubukhulu	650 μm +/- 25 μm
Ukuqondiswa Okuyisisekelo Okuyisicaba	Indiza engu-A(11-20) +/- 0.2°
Ubude Obuphansi Obuyinhloko	30.0 mm +/- 1.0 mm
I-Side Single Polished	Ubuso Bangaphambili	I-Epi-polished, i-Ra < 0.2 nm (nge-AFM)
(SSP)	Indawo Yangemuva	Inhlabathi enhle, i-Ra = 0.8 μm kuya ku-1.2 μm
Ipholishwe Kabili Ehlangothini	Ubuso Bangaphambili	I-Epi-polished, i-Ra < 0.2 nm (nge-AFM)
(i-DSP)	Indawo Yangemuva	I-Epi-polished, i-Ra < 0.2 nm (nge-AFM)
I-TTV	< 20 μm
UKUGOBHOZA	< 20 μm
I-WARP	< 20 μm
Ukuhlanza / Ukupakisha	Ukuhlanza nokupakisha i-vacuum cleanroom yekilasi le-100,
	Izingcezu ezingu-25 ephaketheni lekhasethi elilodwa noma ephaketheni elilodwa.

Sineminyaka eminingi yesipiliyoni embonini yokucubungula i-sapphire. Kubandakanya imakethe yabaphakeli baseShayina, kanye nemakethe yezidingo zomhlaba wonke. Uma unezidingo, sicela ukhululeke ukuxhumana nathi.