4 intshi Ukuhlanzeka okuphezulu kwe-Al2O3 99.999% isicwecwana se-Sapphire substrate i-Dia101.6×0.65mmt enobude obuyisisekelo obuyisicaba

4 intshi Ukuhlanzeka okuphezulu kwe-Al2O3 99.999% isicwecwana seSapphire substrate i-Dia101.6×0.65mmt esinesithombe esifakiwe sobude obuyisicaba obuyisisekelo

Incazelo emfushane:

Iwafa yesafire engama-intshi angu-4 (cishe 101.6 mm) iyiwafa eyenziwe ngesafire enobubanzi obungamayintshi angu-4.

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Incazelo

Ukucaciswa okujwayelekile kwama-4-inch sapphire wafers kwethulwa ngale ndlela elandelayo:

Ubukhulu: Ugqinsi lwamawafa esafire avamile luphakathi kuka-0.2 mm no-2 mm, futhi ukujiya okuthile kungenziwa ngokwezifiso ngokuya ngezidingo zamakhasimende.

I-Placement Edge: Ngokuvamile kuba nengxenye encane emaphethelweni e-wafer ebizwa ngokuthi "i-placement edge" evikela ingaphezulu le-wafer, futhi ngokuvamile i-amorphous.

Ukulungiswa kwendawo: Amawafa esafire avamile agaywa ngomshini futhi aphucuziwe ngokomshini ukuze asheleleze indawo engaphezulu.

Izakhiwo ezingaphezulu: Ingaphezulu lama-wafers wesafire ngokuvamile linezinto ezinhle zokubona, ezifana nokubukeka okuphansi kanye nenkomba ephansi ye-refractive, ukuthuthukisa ukusebenza kwedivayisi.

Izinhlelo zokusebenza

● I-substrate yokukhula yezinhlanganisela ze-III-V ne-II-VI

● Ugesi kanye ne-optoelectronics

● Izinhlelo zokusebenza ze-IR

● I-Silicon On Sapphire Integrated Circuit(SOS)

● I-Radio Frequency Integrated Circuit(RFIC)

Ukucaciswa

Into	4-intshi C-indiza(0001) 650μm Sapphire Wafers
I-Crystal Materials	99,999%, Ukuhlanzeka Okuphezulu, i-Monocrystalline Al2O3
Ibanga	Prime, Epi-Ready
I-Surface Orientation	I-C-plane(0001)
	Indiza ye-C-engeli ebheke ku-M-eksisi 0.2 +/- 0.1°
Ububanzi	100.0 mm +/- 0.1 mm
Ubukhulu	650 μm +/- 25 μm
Isisekelo se-Flat Orientation	Indiza(11-20) +/- 0.2°
Ubude Befulethi obuyisisekelo	30.0 mm +/- 1.0 mm
Uhlangothi Olulodwa Lupholishiwe	Indawo Engaphambili	I-Epi-polished, Ra <0.2 nm (by AFM)
(SSP)	Indawo Engemuva	Umhlabathi omuhle, uRa = 0.8 μm kuya ku-1.2 μm
Uhlangothi Olukabili Lupholishiwe	Indawo Engaphambili	I-Epi-polished, Ra <0.2 nm (by AFM)
(DSP)	Indawo Engemuva	I-Epi-polished, Ra <0.2 nm (by AFM)
I-TTV	< 20 μm
KHOTHAMA	< 20 μm
I-WARP	< 20 μm
Ukuhlanza / Ukupakisha	Ukuhlanza igumbi lokuhlanza le-Class 100 kanye nokupakishwa kwe-vacuum,
	Izingcezu ezingama-25 ephaketheni lekhasethi elilodwa noma ephaketheni lesiqephu esisodwa.

Sinesipiliyoni seminyaka eminingi embonini yokucubungula isafire. Kubandakanya imakethe yabahlinzeki bempahla baseShayina, kanye nemakethe yezidingo zomhlaba wonke. Uma unezidingo, sicela ukhululeke ukuxhumana nathi.