I-substrate ye-Sic silicon carbide engu-2 intshi 6H-N Uhlobo 0.33mm 0.43mm ukupholisha okunezinhlangothi ezimbili Ukushisa okuphezulu Ukusetshenziswa kwamandla aphansi

Incazelo emfushane:

I-Silicon carbide (SiC) iyinto ye-semiconductor ye-wide band gap enokushisa okuhle kakhulu kanye nokuqina kwamakhemikhali.6H-Nikhombisa ukuthi isakhiwo sayo sekristalu sinonxande (6H), kanti i-“N” ikhombisa ukuthi iyinto ye-semiconductor yohlobo lwe-N, evame ukufezwa ngokufaka i-nitrogen eningi.
I-substrate ye-silicon carbide inezici ezinhle kakhulu zokumelana nokucindezela okuphezulu, ukumelana nokushisa okuphezulu, ukusebenza kwemvamisa ephezulu, njll. Uma kuqhathaniswa nemikhiqizo ye-silicon, idivayisi elungiselelwe yi-substrate ye-silicon inganciphisa ukulahlekelwa ngo-80% futhi inciphise usayizi wedivayisi ngo-90%. Ngokuphathelene nezimoto ezintsha zamandla, i-silicon carbide ingasiza izimoto ezintsha zamandla ukuthi zifinyelele okulula futhi zinciphise ukulahlekelwa, futhi zandise ibanga lokushayela; Emkhakheni wokuxhumana kwe-5G, ingasetshenziswa ekwenzeni imishini ehlobene; Ekukhiqizeni amandla e-photovoltaic kungathuthukisa ukusebenza kahle kokuguqulwa; Insimu yokuhamba ngesitimela ingasebenzisa izinga layo lokushisa eliphezulu kanye nezici zokumelana nokucindezela okuphezulu.

Sithumelele i-imeyili

Izici

Okulandelayo yizici ze-wafer ye-silicon carbide engu-2inch

1. Ubulukhuni: Ubulukhuni be-Mohs bucishe bube ngu-9.2.
2. Isakhiwo sekristalu: isakhiwo se-lattice esinama-hexagonal.
3. Ukushisa okuphezulu: Ukushisa okuphezulu kwe-SiC kuphakeme kakhulu kunokwe-silicon, okusiza ekushabalaleni kokushisa okuphumelelayo.
4. Igebe lebhendi ebanzi: igebe lebhendi le-SiC licishe libe ngu-3.3eV, lifanele ukusetshenziswa kwezinga lokushisa eliphezulu, imvamisa ephezulu kanye namandla aphezulu.
5. Insimu kagesi ephukile kanye nokuhamba kwama-electron: Insimu kagesi ephukile kakhulu kanye nokuhamba kwama-electron, okulungele amadivayisi kagesi asebenza kahle njenge-MOSFET kanye nama-IGBT.
6. Ukuqina kwamakhemikhali kanye nokumelana nemisebe: kufanelekile ezindaweni ezinzima njengezindiza kanye nokuvikela izwe. Ukumelana kwamakhemikhali okuhle kakhulu, i-asidi, i-alkali kanye nezinye izinyibilikisi zamakhemikhali.
7. Amandla aphezulu okusebenza ngomshini: Amandla amahle kakhulu okusebenza ngomshini ngaphansi kwezinga lokushisa eliphezulu kanye nendawo engaphansi kokucindezeleka okuphezulu.
Ingasetshenziswa kabanzi emishinini kagesi enamandla aphezulu, imvamisa ephezulu kanye nemishini yokushisa ephezulu, njengezitholi ze-ultraviolet photodetectors, ama-inverter e-photovoltaic, ama-PCU ezimoto zikagesi, njll.

I-wafer ye-silicon carbide engu-2inch inezinhlelo zokusebenza eziningana.

1. Amadivayisi kagesi anamandla: asetshenziselwa ukukhiqiza i-MOSFET yamandla asebenza kahle kakhulu, i-IGBT namanye amadivayisi, asetshenziswa kabanzi ekuguqulweni kwamandla nasezimotweni zikagesi.

Amadivayisi e-2.Rf: Emishinini yokuxhumana, i-SiC ingasetshenziswa kuma-amplifier anemvamisa ephezulu kanye nama-amplifier wamandla e-RF.

3. Amadivayisi e-Photoelectric: njengama-LED asekelwe ku-SIC, ikakhulukazi ekusetshenzisweni okuluhlaza okwesibhakabhaka kanye ne-ultraviolet.

4. Izinzwa: Ngenxa yokumelana kwayo nokushisa okuphezulu kanye namakhemikhali, ama-substrate e-SiC angasetshenziswa ukukhiqiza izinzwa zokushisa okuphezulu kanye nezinye izinhlelo zokusebenza zezinzwa.

5. Ezempi kanye nezindiza: ngenxa yokumelana nokushisa okuphezulu kanye nezici zamandla aphezulu, ezifanele ukusetshenziswa ezindaweni ezibucayi.

Izinkambu eziyinhloko zokusetshenziswa kwe-substrate ye-SIC yohlobo lwe-6H-N zifaka phakathi izimoto ezintsha zamandla, iziteshi zokudlulisa amandla aphezulu kanye neziteshi zokuguqula, izimpahla ezimhlophe, izitimela zesivinini esikhulu, ama-motor, i-inverter ye-photovoltaic, ukunikezwa kwamandla kwe-pulse nokunye.

I-XKH ingenziwa ngokwezifiso ngobukhulu obuhlukene ngokuya ngezidingo zamakhasimende. Ukwelashwa okuhlukile kokungalungi kobuso kanye nokupholisha kuyatholakala. Izinhlobo ezahlukene zokusebenzisa i-doping (njengokusebenzisa i-nitrogen doping) ziyasekelwa. Isikhathi sokulethwa esijwayelekile singamaviki ama-2-4, kuye ngokuthi kwenziwe ngokwezifiso. Sebenzisa izinto zokupakisha ezilwa nokungaguquguquki kanye ne-anti-seismic foam ukuqinisekisa ukuphepha kwe-substrate. Kunezinketho ezahlukene zokuthumela, futhi amakhasimende angahlola isimo se-logistics ngesikhathi sangempela ngenombolo yokulandelela enikeziwe. Nikeza ukwesekwa kobuchwepheshe kanye nezinsizakalo zokubonisana ukuqinisekisa ukuthi amakhasimende angakwazi ukuxazulula izinkinga enkambisweni yokusebenzisa.