I-2 intshi ye-Sic silicon carbide substrate 6H-N Uhlobo 0.33mm 0.43mm ukupholisha okunezinhlangothi ezimbili.

2 intshi ye-Sic silicon carbide substrate 6H-N Uhlobo 0.33mm 0.43mm ukupholisha okunezinhlangothi ezikabili Ukuqhutshwa kwe-thermal okuphezulu Ukusetshenziswa kwamandla okuphansi Isithombe esifakiwe

Incazelo emfushane:

I-Silicon carbide (SiC) iyinsimbi ye-gap semiconductor ebanzi ene-thermal conductivity enhle kakhulu kanye nokuzinza kwamakhemikhali. Uhlobo lwe-6H-N lubonisa ukuthi ukwakheka kwayo kwekristalu kune-hexagonal (6H), futhi u-“N” ubonisa ukuthi i-N-type semiconductor material, evame ukutholwa nge-doping nitrogen.
I-silicon carbide substrate inezici ezinhle kakhulu zokumelana nokucindezela okuphezulu, ukumelana nokushisa okuphezulu, ukusebenza kwemvamisa ephezulu, njll. Uma iqhathaniswa nemikhiqizo ye-silicon, idivayisi elungiswe i-silicon substrate inganciphisa ukulahlekelwa ngo-80% futhi yehlise usayizi wedivayisi ngo-90%. Mayelana nezimoto zamandla amasha, i-silicon carbide ingasiza izimoto zamandla amasha ukuba zifinyelele isisindo futhi zinciphise ukulahlekelwa, futhi zikhulise ibanga lokushayela; Emkhakheni wokuxhumana kwe-5G, ingasetshenziselwa ukwakhiwa kwemishini ehlobene; Ekukhiqizeni amandla e-photovoltaic kungathuthukisa ukusebenza kahle kokuguqulwa; Umkhakha wezokuthutha ngojantshi ungasebenzisa izinga lokushisa eliphezulu nezici zokumelana nomfutho ophezulu.

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Omaka bomkhiqizo

Okulandelayo yizici ze-2inch silicon carbide wafer

1. Ukuqina: Ukuqina kwe-Mohs cishe ku-9.2.
2. Isakhiwo se-Crystal: isakhiwo se-lattice ene-hexagonal.
3. Ukushisa okuphezulu kwe-thermal: i-thermal conductivity ye-SiC iphakeme kakhulu kune-silicon, ehambisana nokushisa okuphumelelayo kokushisa.
4. Igebe lebhendi elibanzi: igebe lebhendi leSiC limayelana ne-3.3eV, lifanele izinga lokushisa eliphezulu, imvamisa ephezulu kanye nezicelo zamandla aphezulu.
5. Inkambu kagesi ephukile kanye nokuhamba kwe-electron: Inkambu kagesi ephukile kanye nokuhamba kwe-electron, kulungele amadivayisi asebenza kahle kagesi afana nama-MOSFET nama-IGBT.
6. Ukuzinza kwamakhemikhali nokumelana nemisebe: kulungele izindawo ezinokhahlo njenge-aerospace nokuvikela izwe. Ukumelana okuhle kwamakhemikhali, i-asidi, i-alkali nezinye izincibilikisi zamakhemikhali.
7. Amandla aphezulu wemishini: Amandla amahle kakhulu wemishini ngaphansi kwezinga lokushisa eliphezulu kanye nemvelo yokucindezela okuphezulu.
Ingasetshenziswa kabanzi emandleni aphezulu, imvamisa ephezulu kanye nemishini yokushisa ephezulu ye-elekthronikhi, njengama-photodetectors e-ultraviolet, ama-photovoltaic inverters, ama-PCU emoto kagesi, njll.

I-2inch silicon carbide wafer inezinhlelo zokusebenza ezimbalwa.

I-1.Amandla emishini kagesi: asetshenziselwa ukukhiqiza amandla asebenza kahle kakhulu i-MOSFET, i-IGBT namanye amadivaysi, asetshenziswa kakhulu ekuguquleni amandla nasezimotweni zikagesi.

Imishini ye-2.Rf: Emishinini yokuxhumana, i-SiC ingasetshenziswa kuma-amplifiers ama-high-frequency kanye nezikhulisamandla ze-RF.

3.Amadivayisi kagesi wesithombe: njengamaledi asekelwe ku-SIC, ikakhulukazi ezinhlelweni eziluhlaza okwesibhakabhaka kanye ne-ultraviolet.

I-4.Izinzwa: Ngenxa yokushisa kwayo okuphezulu nokumelana namakhemikhali, ama-substrates e-SiC angasetshenziswa ukwenza izinzwa zokushisa okuphezulu nezinye izinhlelo zokusebenza zezinzwa.

I-5.I-Military kanye ne-aerospace: ngenxa yokumelana nokushisa okuphezulu kanye nezici zamandla aphezulu, ezifanele ukusetshenziswa ezindaweni ezimbi kakhulu.

Izinkambu eziyinhloko zohlelo lwe-6H-N uhlobo lwe-2 "i-SIC substrate ihlanganisa izimoto ezintsha zamandla, iziteshi zokudlulisa amandla kagesi aphezulu kanye nokuguqulwa, izimpahla ezimhlophe, izitimela ezihamba ngesivinini esikhulu, ama-motor, i-photovoltaic inverter, ukunikezwa kwamandla kagesi nokunye.

I-XKH ingenziwa ngezifiso ngobukhulu obuhlukahlukene ngokuya ngezidingo zamakhasimende. Izindlela zokwelashwa ezihlukene zokuhwaya kwendawo kanye nokupholishwa ziyatholakala. Izinhlobo ezahlukene ze-doping (ezifana ne-nitrogen doping) ziyasekelwa. Isikhathi sokulethwa esijwayelekile singamaviki angu-2-4, kuye ngokwezifiso. Sebenzisa izinto zokupakisha ezilwa ne-static kanye negwebu elilwa nokuzamazama komhlaba ukuze uqinisekise ukuphepha kwe-substrate. Izinketho zokuthumela ezihlukahlukene ziyatholakala, futhi amakhasimende angabheka isimo sokuhamba ngesikhathi sangempela ngenombolo yokulandelela enikeziwe. Nikeza usekelo lwezobuchwepheshe kanye nezinsizakalo zokubonisana ukuze uqinisekise ukuthi amakhasimende angakwazi ukuxazulula izinkinga ngesikhathi sokusebenzisa.