I-Wafer yeSapphire engu-2 intshi engu-50.8mm C-Plane M-plane R-plane A-plane Ubukhulu 350um 430um 500um

Incazelo emfushane:

I-Sapphire iyinto ehlanganisiwe eyingqayizivele yezakhiwo zomzimba, zamakhemikhali nezokubona, ezenza imelane nokushisa okuphezulu, ukushaqeka kokushisa, ukuguguleka kwamanzi nesihlabathi, kanye nokuklwebheka.


Izici

Ukucaciswa kwezindlela ezahlukene

Ukuqondiswa

I-C(0001)-Axis

I-R(1-102)-Axis

I-M(10-10) -I-Axis

I-A(11-20)-Axis

Impahla engokoqobo

I-axis C inokukhanya kwekristalu, kanti ezinye izingqimba zinokukhanya okungekuhle. I-Plane C iyisicaba, kungcono ukuthi inqunywe.

Indiza engu-R inzima kancane kune-A.

Indiza i-M inezinsika ezinezitebhisi, akulula ukuyisika, kulula ukuyisika. Ubulukhuni be-A-plane buphakeme kakhulu kunobe-C-plane, obubonakala ngokumelana nokuguguleka, ukumelana nokuklwebheka kanye nobunzima obukhulu; I-Side A-plane iyi-plane egobile, okulula ukuyisika;
Izicelo

Ama-substrates e-sapphire aqondiswe ku-C asetshenziselwa ukukhulisa amafilimu afakwe ku-III-V kanye ne-II-VI, njenge-gallium nitride, engakhiqiza imikhiqizo ye-LED eluhlaza okwesibhakabhaka, ama-laser diode, kanye nezinhlelo zokusebenza zokuthola i-infrared.
Lokhu kungenxa yokuthi inqubo yokukhula kwekristalu yesafire eceleni kwe-C-axis ivuthiwe, izindleko ziphansi kakhulu, izakhiwo zomzimba nezamakhemikhali zizinzile, kanti ubuchwepheshe be-epitaxy ku-C-plane buvuthiwe futhi buzinzile.

Ukukhula kwe-substrate okuqondiswe ku-R kwama-extrasystal e-silicon ahlukene abekwe phansi, asetshenziswa kumasekethe ahlanganisiwe e-microelectronics.
Ngaphezu kwalokho, amasekethe ahlanganisiwe anesivinini esikhulu kanye nezinzwa zokucindezela nazo zingakhiwa enkambisweni yokukhiqizwa kwefilimu yokukhula kwe-epitaxial silicon. I-substrate yohlobo lwe-R ingasetshenziswa futhi ekukhiqizweni kwe-lead, ezinye izingxenye ze-superconducting, ama-resistors aphezulu okumelana, i-gallium arsenide.

Isetshenziswa kakhulu ukukhulisa amafilimu e-epitaxial e-GaN angewona ama-polar/semi-polar ukuze kuthuthukiswe ukusebenza kahle kokukhanya. I-A-oriented to the substrate ikhiqiza i-permittivity/medium efanayo, futhi izinga eliphezulu lokuvikela liyasetshenziswa kubuchwepheshe be-hybrid microelectronics. Ama-superconductor okushisa okuphezulu angakhiqizwa ngamakristalu amade e-A-base.
Umthamo wokucubungula I-Pattern Sapphire Substrate (PSS): Ngendlela yokukhula noma ukuqopha, amaphethini e-microstructure ajwayelekile e-nanoscale aklanywa futhi enziwa ku-substrate ye-sapphire ukulawula uhlobo lokukhipha ukukhanya kwe-LED, nokunciphisa amaphutha ahlukene phakathi kwe-GaN ekhula ku-substrate ye-sapphire, kuthuthukiswe ikhwalithi ye-epitaxy, futhi kuthuthukiswe ukusebenza kahle kwe-quantum ye-LED futhi kwandiswe ukusebenza kahle kokukhishwa kokukhanya.
Ngaphezu kwalokho, i-sapphire prism, isibuko, ilensi, umgodi, ikhoni nezinye izingxenye zesakhiwo zingenziwa ngezifiso ngokuya ngezidingo zamakhasimende.

Isimemezelo sempahla

Ubuningi Ubulukhuni iphuzu lokuncibilika Inkomba yokubuka (ebonakalayo ne-infrared) Ukudluliselwa (i-DSP) I-dielectric constant
3.98g/cm3 9(izinyanga) 2053℃ 1.762~1.770 ≥85% 11.58@300K ku-C axis(9.4 ku-A axis)

Umdwebo Oningiliziwe

i-avcasvb (1)
i-avcasvb (2)
i-avcasvb (3)

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