2 inch 50.8mm Sapphire Wafer C-Plane M-plane R-plane R-plane A-plane Ubukhulu 350um 430um 500um

Incazelo emfushane:

I-Sapphire iyinhlanganisela eyingqayizivele yezinto ezibonakalayo, zamakhemikhali nezokubona, eziyenza imelane nezinga lokushisa eliphezulu, ukushaqeka okushisayo, ukuguguleka kwamanzi nesihlabathi, nokuklwebheka.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ukucaciswa kwama-orientation ahlukene

Ukuqondisa

I-C(0001)-I-eksisi

I-R(1-102)-I-eksisi

I-M(10-10) -I-eksisi

I-A(11-20)-I-eksisi

Impahla ebonakalayo

I-axis ye-C inokukhanya kwekristalu, kanti amanye ama-ax anokukhanya okungekuhle. I-Plane C iyisicaba, kungcono ukusikwa.

Indiza engu-R inzima kancane kuno-A.

Indiza engu-M inyathelwe ijika, akulula ukuyisika, ukuyisika kalula. Ukuqina kwendiza ye-A kuphakeme kakhulu kunokwendiza ye-C, ebonakaliswa ukumelana nokugqoka, ukumelana nokuklwebheka kanye nokuqina okuphezulu; I-Side A-plane iyindiza ye-zigzag, okulula ukuyisika;
Izinhlelo zokusebenza

Ama-substrates esafire agxile ku-C asetshenziselwa ukukhulisa amafilimu afakwe i-III-V kanye ne-II-VI, njenge-gallium nitride, engakhiqiza imikhiqizo ye-LED eluhlaza okwesibhakabhaka, ama-laser diode, kanye nezicelo zomtshina we-infrared.
Lokhu kungenxa yokuthi inqubo yokukhula kwekristalu yesafire eduze kwe-C-axis ivuthiwe, izindleko ziphansi, izakhiwo ezingokwenyama namakhemikhali zizinzile, futhi ubuchwepheshe be-epitaxy endizeni ye-C buvuthiwe futhi buzinzile.

Ukukhula kwe-substrate okugxile ku-R kwama-silicon extrasystals afakiwe ahlukile, asetshenziswa kumasekethe ahlanganisiwe we-microelectronics.
Ngaphezu kwalokho, amasekethe ahlanganisiwe anesivinini esikhulu kanye nezinzwa zokucindezela nazo zingakhiwa ohlelweni lokukhiqizwa kwefilimu yokukhula kwe-silicon ye-epitaxial. I-substrate yohlobo lwe-R ingasetshenziswa futhi ekukhiqizeni umthofu, ezinye izingxenye ze-superconducting, ukumelana nokumelana okuphezulu, i-gallium arsenide.

Isetshenziswa kakhulu ukukhulisa amafilimu e-GaN epitaxial angeyona i-polar/semi-polar ukuthuthukisa ukusebenza kahle okukhanyayo. Okuqondiswe ku-A ku-substrate kukhiqiza imvume efanayo/okumaphakathi, futhi izinga eliphezulu lokwahlukanisa lisetshenziswa kubuchwepheshe be-hybrid microelectronics. Ama-superconductors okushisa aphezulu angakhiqizwa kusuka ku-A-base elongated crystals.
Umthamo wokucubungula I-Pattern Sapphire Substrate (PSS) : Ngendlela Yokukhula noma Yokuhlanganisa, amaphethini we-nanoscale avamile we-microstructure aklanywa futhi enziwa endaweni engaphansi yesafire ukuze kulawulwe uhlobo lokukhipha ukukhanya kwe-LED, futhi kuncishiswe amaphutha okuhlukanisa phakathi kwe-GaN ekhula ku-sapphire substrate, ithuthukise ikhwalithi ye-epitaxy, futhi ithuthukise ukusebenza kahle kokukhanya kwe-LED kwangaphakathi.
Ngaphezu kwalokho, isafire prism, isibuko, ilensi, umgodi, Isigaxa kanye nezinye izingxenye zesakhiwo kungenziwa egcizelele ngokuvumelana nezidingo zamakhasimende.

Isimemezelo sempahla

Ukuminyana Ukuqina ncibilika iphuzu Inkomba ye-refractive (ebonakalayo ne-infrared) I-Transmittance (DSP) I-Dielectric njalo
3.98g/cm3 9(mohs) 2053℃ 1.762~1.770 ≥85% 11.58@300K ku-axis ye-C(9.4 eksisini ye-A)

Umdwebo onemininingwane

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