12 inch sic substrate silicon Carbide Prime Ibanga le-300mm usayizi omkhulu we-4h-n alungele ukushiyeka kokushisa kwamadivayisi aphezulu

12 inch sic subverstrate silicon Carbide Prime Ibanga le-300mm usayizi omkhulu 4h-n alungele isithombe esiphezulu sokushisa kwamathuluzi

Incazelo emfushane:

I-augretate engu-12-inch kasilicon carbide substrate (i-sic substrate) iyisilinganiso esikhulu, i-semiconductor esebenza ngokusebenza kwe-semiconductor engaphansi eyenziwe ngekristalu eyodwa ye-silicon carbide. I-Silicon Carbide (SIC) iyisisekelo se-semiconductor ye-semiconductor ebanzi enezinto ezisebenza kahle zikagesi, ezishisayo nezemishini, ezisetshenziswa kabanzi ekwenziweni kwamadivayisi we-elekthronikhi emandleni aphezulu, imvamisa ephezulu kanye nezindawo eziphakeme zokushisa. I-substrate engu-12-inch (300mm) ukucaciswa kwamanje okuthuthukile kwe-silicon Carbide Technology, okungathuthukisa kakhulu ukusebenza kahle kokukhiqiza futhi kunciphise izindleko.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Amathegi Omkhiqizo

Izici zomkhiqizo

1. Ukuqhutshwa okuphezulu okushisayo: Ukuvuselelwa okushisayo kwe-Silicon Carbide kungaphezu kwezikhathi ezi-3 ezingowo-Silicon, ezilungele ukushiyeka kokushisa kwamathuluzi okushisa kwamathuluzi aphezulu.

I-bandgap ye-3.wiDide: I-bandgap yi-3.26EV (4h-Sic), ilungele izilinganiso eziphezulu zokushisa kanye nezicelo ezimvamisa kakhulu.

I-4. Ubulukhuni obuphezulu: Ubulukhuni be-mohts lungu-9.2, okwesibili kuphela kudayimane, ukumelana kahle kokugqoka namandla emishini.

5. Ukuqina kwamakhemikhali: ukumelana okuqinile kokugqwala, ukusebenza okuzinzile ekushiseni okuphezulu nendawo enokhahlo.

6. Ubukhulu obukhulu: 12 inch (300mm) substrate, thuthukisa ukusebenza kahle kokukhiqiza, ukunciphisa izindleko zeyunithi.

I-7.Low Defpect Fensity: Ikhwalithi ephezulu yokukhula kwekristalu ubuchwepheshe bokuqinisekisa ubuhlakani obuphansi nobukhulu.

Ukuqondiswa kohlelo lokusebenza main main

1. Amandla Electronics:

Ama-Mosfes: asetshenziswa ezimotweni zikagesi, ukushayela kwezimboni zezimboni kanye nabaguquli bamandla.

Ama-Diodes: njengeSchottky Diodes (SBD), esetshenziselwa ukulungisa kabusha okusebenzayo nokushintsha okutholakalayo kwamandla.

2. Amadivayisi we-RF:

I-RF Power Amplifier: Isetshenziswa eziteshini ze-5G zokuxhumana eziyisisekelo kanye nokuxhumana kwe-satellite.

Amadivayisi we-Microwave: Ilungele izinhlelo zokuxhumana zeRadar ne-Wireless.

I-3. Izimoto ezintsha ze-ENED ENTER

Amasistimu we-Electric Drayivu: abalawuli bezimoto nabasekeli bezimoto zikagesi.

I-Charging Pile: Imodyuli yamandla yemishini yokushaja okusheshayo.

4. Izicelo zezimboni:

I-HINGTAGE VOLTAGE INVERTER: Ngokulawula kwezimoto zezimboni kanye nokuphathwa kwamandla.

I-Smart Grid: Ukudluliselwa kwe-HVDC kanye nama-Electronics Electronics Transformers.

5. I-Aerospace:

Ama-elekthronikhi okushisa aphezulu: efanelekile ezindaweni eziphakeme zokushisa zemishini ye-aerospace.

6. Insimu Yocwaningo:

Ucwaningo olubanzi lwe-bandgap semiconductor ucwaningo: Ukuthuthukiswa kwezinto ezintsha ze-semiconductor namadivayisi.

I-12-Inch Alimaton Carbide Substrate uhlobo lwe-Expremoncy Perfordance Regrector subsTrate enezindawo ezinhle kakhulu ezinjengokuvuka okuphezulu okushisayo, amandla we-high breakdown kanye ne-band band kanye ne-band band ne-band ephezulu. Isetshenziswa kabanzi ku-Power Electronics, amadivaysi afudumele eRadio, izimoto ezintsha zamandla, izimboni zezimboni kanye ne-aerospace, futhi ziyinto ebalulekile ukukhuthaza ukuthuthukiswa kwesizukulwane esilandelayo samadivayisi we-elekhthronikhi asebenzayo.

Ngenkathi ama-Silicon Carbide Subrates njengamanje anezicelo ezimbalwa eziqondile ze-elekthronikhi yabathengi ezinjengezibuko ze-AR, amandla abo okuphathwa kwamandla asebenza kahle nama-elekthronikhi aphansi angasekela izixazululo zokuthenga ezilula, ezisebenza ngokusebenza kwamadivayisi wesikhathi esizayo se-AR / VR. Njengamanje, ukuthuthukiswa okuyinhloko kwe-Silicon Carbide Subrestrate kugxile ezinkambeni zezimboni ezinjengezimoto ezintsha zamandla, ingqalasizinda yezimboni kanye nokuzenzakalela kwe-semiconductor, futhi kuthuthukisa ukuqondiswa okusebenzayo futhi okuthembekile.

I-XKH izibophezele ekuhlinzekeni ikhwalithi ephezulu ye-12 "Sixtrates ephelele yokusekelwa kwezobuchwepheshe kanye nezinsizakalo, kufaka phakathi:

1. Ukukhiqizwa okwenziwe ngokwezifiso: Ngokusho kwamakhasimende kudinga ukuhlinzeka ngokuqiniseka okuhlukile, ukuqondiswa kwe-crystal kanye nokuvunyelwa komhlaba ongaphezulu.

2. Ukusebenza kwenqubo

I-3. Ukuhlola kanye nesitifiketi: hlinzeka ngokutholwa kwesici okuqinile kanye nesitifiketi sekhwalithi ukuqinisekisa ukuthi i-substrate ihlangana namazinga ezimboni.

I-4.r & D Ukubambisana: Ukuhlakulela Ngokuhlanganyela Amadivayisi we-Silicon Carbide amasha namakhasimende ukukhuthaza ubuchwepheshe obusha.

Ishadi ledatha

1 2 inch silicon Carbide (Sic) Substrate Probide
Khuphuka		Ukukhiqizwa kwe-Zerompd Ibanga (z ibanga)	Ukukhiqizwa okujwayelekile Ibanga (Ibanga le-P)		Ibanga le-Dummy (Ibanga le-D)
Ibanga elinquma phakathi ububanzi besingelezi		3 0 0 mm ~ 1305mm
Ukujiya	4h-n	750μm ± 15 μm	I-750μM ± 25 μm
	4h-si	750μm ± 15 μm	I-750μM ± 25 μm
Ukuqondiswa okumhlophe		Ukusuka Ku-Axis: 4.0 ° kuya ku- <1120> ± 0.5 ° ngo-4h-n, ku-axis: <0001> ± 0,5 ° ngo-4h-si
Ubuningi beMicropipe	4h-n	≤0.4cm-2	≤4cm-2		≤25cm-2
	4h-si	≤5c-2	≤10cm-2		≤25cm-2
Ukumelanakabisa	4h-n	0.015 ~ 0.024 ω · cm			0.015 ~ 0.028 ω · cm
	4h-si	≥1E10 ω ω · cm			≥1E5 ω · cm
Ukuqondiswa okuyisisekelo		{10-10} ± 5.0 °
Ubude obukhulu obucaba	4h-n	N / a
	4h-si	Ugch
Ukukhishwa okunqenqemeni		3 mm
I-LTV / TTV / Bow / Warp		≤5μM / ≤15μm / ≤35 μm / ≤55 μm			≤5μM / ≤15μm / ≤35 □ μm / ≤55 □ μm
Ukubaluleka		IsiPolish ra≤1 nm
		CMP RA≤0.2 NM			Ra ≤≤0.5 nm
Ukuqhekeka okunqenqemeni ngokukhanya okuphezulu Amapuleti e-hex ngokukhanya okuphezulu Izindawo ze-polytype ngokukhanya okuphezulu kakhulu Inclusions ebonakalayo yekhabhoni I-Silicon Surfavil Scrainkes ngokukhanya okuphezulu		Namunye Indawo ehlanganayo ≤0.05% Namunye Indawo ehlanganayo ≤0.05% Namunye			Ubude obuqongelayo ≤ 20 mm, ubude obungashadile bm Indawo ehlanganayo ≤0.1% Indawo ekhulile ≤3% Indawo ehlanganayo ≤3% Ububanzi obukhumulayo ≤1 × wafer ububanzi
Ama-Chips anqenqemeni ngokukhanya okuphezulu		Akekho ovuthiwe ≥0.2mm ububanzi nokujula			7 kuvunyelwe, ≤1 mm ngakunye
(TSD) Ricking Screw diabshini		≤500 cm-2		N / a
(BPD) Sublocation Plane		≤1000 cm-2		N / a
Ukungcoliswa komhlaba weSilicon		Namunye
Ukuwowapha		I-multi-wafer cassette noma isitsha esisodwa se-wafer
Amanothi:
1 Imikhawulo Yezezimali isebenza endaweni ephelele ye-wafer ngaphandle kwendawo yokukhishwa konqenqemeni. 2Ukuhlolwa kobuso be-SI kuphela. 3 Idatha yokungenisa ivela kuma-wafers we-koh kuphela.

I-XKH izoqhubeka nokutshala imali ocwaningweni nasekuthuthukisweni ukukhuthaza impumelelo ye-12-inch silicon Cartrates ngosayizi omkhulu, iziphambeko eziphansi kanye nokuvumelana okuphezulu, okufana namamojula wamandla amadivayisi we-AR / VR) kanye ne-quantum computer. Ngokunciphisa izindleko kanye namandla andayo, i-XKH izoletha ukuchuma embonini ye-semiconductor.