12 inch SIC substrate silicon carbide prime grade diameter 300mm usayizi omkhulu 4H-N Ifanele idivayisi yamandla aphezulu ukuchithwa kokushisa

Incazelo emfushane:

I-12-inch silicon carbide substrate (i-SiC substrate) iwusayizi omkhulu, i-semiconductor material substrate esebenza kakhulu eyenziwe ngekristalu eyodwa ye-silicon carbide. I-Silicon carbide (SiC) iyi-wide band gap semiconductor material enezakhiwo ezinhle kakhulu zikagesi, ezishisayo nezomshini, esetshenziswa kabanzi ekwenzeni izinto zikagesi ngamandla aphezulu, imvamisa ephezulu kanye nezimo ezishisayo. I-substrate engu-12-intshi (300mm) iwukucaciswa okuthuthukisiwe kwamanje kobuchwepheshe be-silicon carbide, okungathuthukisa kakhulu ukusebenza kahle kokukhiqiza nokunciphisa izindleko.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Izici zomkhiqizo

1. Ukushisa okuphezulu kwe-thermal: i-thermal conductivity ye-silicon carbide ingaphezu kwezikhathi ezingu-3 kune-silicon, efanelekile ukuchithwa kokushisa kwedivayisi yamandla aphezulu.

2. Amandla enkambu yokwephuka okuphezulu: Amandla enkambu yokuwohloka aphindwe izikhathi ezingu-10 awe-silicon, afanele izicelo zokucindezela okukhulu.

I-3.I-bandgap ebanzi: I-bandgap yi-3.26eV (4H-SiC), ifanele izinga lokushisa eliphezulu kanye nezicelo zemvamisa ephezulu.

4. Ukuqina okuphezulu: Ukuqina kwe-Mohs kungu-9.2, okwesibili kuphela kwedayimane, ukumelana okuhle kakhulu kokugqokwa namandla emishini.

5. Ukuzinza kwamakhemikhali: ukumelana nokugqwala okuqinile, ukusebenza okuzinzile ekushiseni okuphezulu kanye nemvelo enokhahlo.

6. Usayizi omkhulu: 12 inch (300mm) substrate, ngcono ukukhiqiza ukusebenza kahle, ukunciphisa iyunithi izindleko.

I-7.I-Defect Defect Density: Ikhwalithi ephezulu yobuchwepheshe bokukhula kwekristalu eyodwa ukuze kuqinisekiswe ukuminyana kwesici esiphansi nokuvumelana okuphezulu.

Isiqondiso sohlelo lokusebenza oluyinhloko lomkhiqizo

1. Izinto zikagesi:

Ama-Mosfets: Asetshenziswa ezimotweni zikagesi, amadrayivu ezimoto zezimboni kanye neziguquli zamandla.

Ama-Diode: njenge-Schottky diodes (SBD), asetshenziselwa ukulungisa kahle nokushintsha izinto zamandla.

2. Amadivayisi we-Rf:

Isikhulisi samandla e-Rf: sisetshenziswa eziteshini eziyisisekelo zokuxhumana ze-5G nokuxhumana ngesathelayithi.

Imishini ye-Microwave: Ifanele i-radar nezinhlelo zokuxhumana ezingenazintambo.

3. Izimoto zamandla amasha:

Amasistimu okushayela kagesi: izilawuli zezimoto nama-inverter ezimotweni zikagesi.

Inqwaba yokushaja: Imojula yamandla yemishini yokushaja ngokushesha.

4. Izicelo zezimboni:

I-inverter ye-voltage ephezulu: yokulawulwa kwezimoto zezimboni kanye nokuphathwa kwamandla.

Igridi ehlakaniphile: Okokudlulisela kwe-HVDC kanye neziguquli zamandla kagesi.

5. Umkhathi:

I-electronics yokushisa ephezulu: ifanele izindawo zokushisa eziphezulu zemishini ye-aerospace.

6. Inkambu yocwaningo:

Ucwaningo olubanzi lwe-bandgap semiconductor: lokuthuthukiswa kwezinto ezintsha ze-semiconductor namadivayisi.

I-12-intshi ye-silicon carbide substrate iwuhlobo lwe-semiconductor material substrate esebenza kahle kakhulu enezindawo ezinhle kakhulu ezifana ne-thermal conductivity ephezulu, amandla ensimu yokuwohloka okuphezulu kanye negebe lebhande elibanzi. Isetshenziswa kakhulu kuma-electronics anamandla, ezinsizakalweni zefrikhwensi yomsakazo, ezimotweni ezintsha zamandla, ekulawuleni izimboni kanye ne-aerospace, futhi iyinto ebalulekile yokukhuthaza ukuthuthukiswa kwesizukulwane esilandelayo semishini kagesi enamandla kakhulu nanamandla.

Nakuba ama-silicon carbide substrates njengamanje anezinhlelo ezimbalwa eziqondile ezisebenza ku-electronics abathengi njengezibuko ze-AR, amandla azo ekulawuleni amandla ngendlela ephumelelayo nezinto zikagesi ezincane zingasekela izixazululo zokuphakela amandla ezingasindi, ezisebenza kahle kakhulu zamadivayisi esikhathi esizayo e-AR/VR. Njengamanje, ukuthuthukiswa okuyinhloko kwe-silicon carbide substrate kugxile emikhakheni yezimboni efana nezimoto ezintsha zamandla, ingqalasizinda yezokuxhumana kanye ne-automation yezimboni, futhi ikhuthaza imboni ye-semiconductor ukuthi ithuthuke ngendlela esebenza kahle futhi enokwethenjelwa.

I-XKH izibophezele ekunikezeni izinga eliphezulu 12 "ama-SIC substrates anosekelo olubanzi lobuchwepheshe namasevisi, okuhlanganisa:

1. Ukukhiqizwa okwenziwe ngokwezifiso: Ngokwezidingo zekhasimende ukuhlinzeka ngokumelana okuhlukile, ukuma kwekristalu kanye ne-substrate yokwelashwa komhlaba.

2. Ukuthuthukisa inqubo: Nikeza amakhasimende ngosekelo lobuchwepheshe lokukhula kwe-epitaxial, ukukhiqizwa kwedivayisi nezinye izinqubo zokuthuthukisa ukusebenza komkhiqizo.

3. Ukuhlola kanye nesitifiketi: Nikeza ukutholwa kokukhubazeka okuqinile kanye nesitifiketi sekhwalithi ukuze kuqinisekiswe ukuthi indawo engaphansi ihlangabezana nezindinganiso zomkhakha.

Ukubambisana kwe-4.R&d: Hlanganisa ngokuhlanganyela amadivayisi amasha e-silicon carbide namakhasimende ukuze kuthuthukiswe ukuqanjwa kabusha kwezobuchwepheshe.

Ishadi ledatha

1 2 inch Silicon Carbide (SiC) Substrate Specification
Ibanga		Ukukhiqizwa kwe-ZeroMPD Ibanga(Z Grade)	Ukukhiqizwa Okujwayelekile Ibanga(P Grade)		Dummy Grade (D Grade)
Ububanzi		3 0 0 mm ~ 305mm
Ubukhulu	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
I-Wafer Orientation		Ku-axis evaliwe : 4.0° kuya ku-<1120 >±0.5° ku-4H-N, Ku-eksisi : <0001>±0.5° ku-4H-SI
I-Micropipe Density	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ukungazweli	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Isisekelo se-Flat Orientation		{10-10} ±5.0°
Ubude Befulethi obuyisisekelo	4H-N	N/A
	4H-SI	Inothi
Ukukhishwa komkhawulo		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Ubulukhuni		I-Polish Ra≤1 nm
		I-CMP Ra≤0.2 nm			I-Ra≤0.5 nm
I-Edge Cracks By High Intensity Light I-Hex Plates Ngokukhanya Okunamandla Okuphezulu Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu I-Visual Carbon Inclusions I-Silicon Surface Scratches By High Intensity Light		Lutho Indawo eqoqiwe ≤0.05% Lutho Indawo eqoqiwe ≤0.05% Lutho			Ubude obuqongelelwayo ≤ 20 mm, ubude obubodwa≤2 mm Indawo eqoqiwe ≤0.1% Indawo eqoqiwe≤3% Indawo eqoqiwe ≤3% Ubude obuqongelelwayo≤1× ububanzi bewafa
Ama-Edge Chips Ngokukhanya Okunamandla Okuphezulu		Akukho okuvunyelwe ≥0.2mm ububanzi nokujula			7 okuvunyelwe, ≤1 mm ngakunye
(TSD) Ukukhipha isikulufu sochungechunge		≤500 cm-2		N/A
(BPD) Ukususwa kwendiza okuyisisekelo		≤1000 cm-2		N/A
I-Silicon Surface Contamination By High Intensity Light		Lutho
Ukupakisha		Ikhasethi elinesinkwa esilucwecwana noma Isitsha Esiyisinkwa Esikodwa
Amanothi:
1 Imikhawulo yokukhubazeka isebenza kuyo yonke indawo eyiwafa ngaphandle kwendawo engabaliwe enqenqemeni. 2Ukuklwebheka kufanele kubhekwe ku-Si face kuphela. 3 Idatha yokususwa isuka kumawafa aqoshiwe e-KOH kuphela.

I-XKH izoqhubeka nokutshala imali ocwaningweni nasekuthuthukisweni ukuze kuthuthukiswe ukuphumelela kwe-12-inch silicon carbide substrates ngobukhulu obukhulu, ukukhubazeka okuphansi nokuvumelana okuphezulu, kuyilapho i-XKH ihlola izinhlelo zayo zokusebenza ezindaweni ezisafufusa ezifana ne-electronics yabathengi (njengamamojula wamandla amadivayisi we-AR/VR) kanye ne-quantum computing. Ngokunciphisa izindleko nokwandisa umthamo, i-XKH izoletha ukuchuma embonini ye-semiconductor.