I-12 Intshi ye-SiC substrate Ububanzi 300mm Ubukhulu 750μm 4H-N Uhlobo lungenziwa ngendlela oyifisayo

12 Intshi SiC substrate Ububanzi 300mm Ukuqina 750μm 4H-N Uhlobo lungenziwa ngendlela oyifisayo Isithombe Esifakiwe

Incazelo emfushane:

Esimeni esibucayi soguquko lwemboni ye-semiconductor oluya ezixazululweni ezisebenza kahle nezihlangene, ukuvela kwe-12-inch SiC substrate (12-inch silicon carbide substrate) kuyiguqule ngokuyisisekelo indawo. Uma kuqhathaniswa nokucaciswa kwendabuko okungu-6 intshi no-8-intshi, inzuzo yosayizi omkhulu we-substrate engu-12-intshi inyusa inani lama-chips akhiqizwa ngewafa ngayinye ngokuphindwe kane. Ukwengeza, izindleko zeyunithi ye-substrate ye-SiC engu-12 intshi zehliswa ngo-35-40% uma kuqhathaniswa nama-substrates avamile angu-8-intshi, okubalulekile ekwamukelweni okusabalele kwemikhiqizo yokugcina.
Ngokusebenzisa ubuchwepheshe bethu bokukhulisa ezokuthutha ngomhwamuko, sizuze ukulawula okuhamba phambili embonini phezu kokuminyana kokugudluzwa kumakristalu angama-intshi angu-12, sinikeza isisekelo esikhethekile sokwenziwa kwemishini elandelayo. Le ntuthuko ibaluleke kakhulu phakathi nokushoda kwamanje kwama-chip emhlabeni jikelele.

Imishini kagesi engukhiye ezinhlelweni zansuku zonke—njengeziteshi zokushaja ngokushesha ze-EV kanye neziteshi eziyisisekelo ze-5G—ziya ngokuya zamukela le substrate yosayizi omkhulu. Ikakhulukazi emazingeni okushisa aphezulu, ama-voltage aphezulu, nakwezinye izindawo zokusebenza ezinokhahlo, i-substrate ye-SiC engu-12 intshi ibonisa ukuzinza okuphakeme kakhulu uma kuqhathaniswa nezinto ezisekelwe ku-silicon.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Imingcele yezobuchwepheshe

I-12 inch Silicon Carbide (SiC) Substrate Specification
Ibanga		Ukukhiqizwa kwe-ZeroMPD Ibanga(Z Grade)	Ukukhiqizwa Okujwayelekile Ibanga(P Grade)		Dummy Grade (D Grade)
Ububanzi		3 0 0 mm ~ 1305mm
Ubukhulu	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
I-Wafer Orientation		Ku-axis evaliwe : 4.0° kuya ku-<1120 >±0.5° ku-4H-N, Ku-eksisi : <0001>±0.5° ku-4H-SI
I-Micropipe Density	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ukungazweli	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Isisekelo se-Flat Orientation		{10-10} ±5.0°
Ubude Befulethi obuyisisekelo	4H-N	N/A
	4H-SI	Inothi
Ukukhishwa komkhawulo		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Ubulukhuni		I-Polish Ra≤1 nm
		I-CMP Ra≤0.2 nm			I-Ra≤0.5 nm
I-Edge Cracks By High Intensity Light I-Hex Plates Ngokukhanya Okunamandla Okuphezulu Izindawo ze-Polytype Ngokukhanya Okunamandla Okuphezulu I-Visual Carbon Inclusions I-Silicon Surface Scratches By High Intensity Light		Lutho Indawo eqoqiwe ≤0.05% Lutho Indawo eqoqiwe ≤0.05% Lutho			Ubude obuqongelelwayo ≤ 20 mm, ubude obubodwa≤2 mm Indawo eqoqiwe ≤0.1% Indawo eqoqiwe≤3% Indawo eqoqiwe ≤3% Ubude obuqongelelwayo≤1× ububanzi bewafa
Ama-Edge Chips Ngokukhanya Okunamandla Okuphezulu		Akukho okuvunyelwe ≥0.2mm ububanzi nokujula			7 okuvunyelwe, ≤1 mm ngakunye
(TSD) Ukukhipha isikulufu sochungechunge		≤500 cm-2		N/A
(BPD) Ukususwa kwendiza okuyisisekelo		≤1000 cm-2		N/A
I-Silicon Surface Contamination By High Intensity Light		Lutho
Ukupakisha		Ikhasethi elinesinkwa esilucwecwana noma Isitsha Esiyisinkwa Esikodwa
Amanothi:
1 Imikhawulo yokukhubazeka isebenza kuyo yonke indawo eyiwafa ngaphandle kwendawo engabaliwe enqenqemeni. 2Ukuklwebheka kufanele kubhekwe ku-Si face kuphela. 3 Idatha yokususwa isuka kumawafa aqoshiwe e-KOH kuphela.

Izici Eziyinhloko

1.Ikhono Lokukhiqiza kanye Nezinzuzo Zezindleko: Ukukhiqizwa ngobuningi be-substrate ye-SiC engu-12-intshi (i-12-inch silicon carbide substrate) kuphawula inkathi entsha ekukhiqizeni i-semiconductor. Inani lama-chips atholakala ku-wafer eyodwa lifinyelela izikhathi ezingu-2.25 kunele-substrate engu-8-intshi, okuholela ngokuqondile ekusebenzeni kahle kokukhiqiza. Impendulo yekhasimende ibonisa ukuthi ukwamukela ama-substrates angu-12-intshi kwehlise izindleko zawo zokukhiqiza amamojula wamandla ngo-28%, okudala inzuzo ewujuqu yokuncintisana emakethe okuqhudelana ngayo kanzima.
2.Izakhiwo Ezivelele Zomzimba: I-substrate ye-SiC engu-12-intshi ithola ifa zonke izinzuzo zezinto ze-silicon carbide - conductivity yayo eshisayo iphindwe izikhathi ezi-3 kune-silicon, kuyilapho amandla ayo enkambu yokuphuka afinyelela izikhathi ezingu-10 kune-silicon. Lezi zici zenza amadivayisi asuselwe kuma-substrates angu-12-intshi ukuthi asebenze ngokuzinzile endaweni enezinga lokushisa eliphezulu elingaphezu kuka-200°C, okuwenza afanelekele ngokukhethekile izinhlelo zokusebenza ezifunwa kakhulu njengezimoto zikagesi.
3.I-Surface Treatment Technology: Senze inqubo yenoveli yokupholisha amakhemikhali (CMP) eqondiswe ngqo kuma-substrates e-SiC angu-12-intshi, kuzuzwe ukucaba komhlaba kweleveli ye-athomu (Ra<0.15nm). Lokhu kuphumelela kuxazulula inselele yomhlaba wonke yokwelashwa kwe-wafer ye-silicon carbide wafer enobubanzi obukhulu, kusula izithiyo zokukhula kwekhwalithi ephezulu ye-epitaxial.
4.Ukusebenza Kokuphatha Okushisayo: Kuzinhlelo zokusebenza ezingokoqobo, ama-substrates e-SiC angu-12 intshi abonisa amandla amangalisayo okukhipha ukushisa. Idatha yokuhlola ibonisa ukuthi ngaphansi kokuminyana kwamandla okufanayo, amadivayisi asebenzisa ama-substrates angu-12-intshi asebenza emazingeni okushisa angu-40-50°C aphansi kunamadivayisi asekelwe ku-silicon, andisa kakhulu impilo yesevisi yemishini.

Izicelo Eziyinhloko

1.I-New Energy Vehicle Ecosystem: I-substrate ye-SiC engu-12-intshi (i-silicon carbide substrate engu-12-intshi) iguqula izakhiwo ze-powertrain yemoto kagesi. Kusukela kumashaja angaphakathi (OBC) kuya kuma-inverter amakhulu namasistimu okuphatha amabhethri, ukuthuthukiswa kokusebenza kahle okulethwa ama-substrates angu-12-intshi kwenyusa ibanga lezimoto ngo-5-8%. Imibiko evela kumenzi wezimoto ohamba phambili ibonisa ukuthi ukusebenzisa ama-substrates ethu angu-12-intshi kwehlisa ukulahlekelwa kwamandla kusistimu yabo eshaja ngokushesha ngo-62%.
2.Umkhakha Wamandla Avuselelekayo: Eziteshini zamandla e-photovoltaic, ama-inverter asekelwe kuma-substrates e-SiC angu-12-intshi awagcini nje ngokufaka izici zefomu ezincane kodwa futhi afinyelela ukusebenza kahle kokuguqulwa okudlula u-99%. Ikakhulukazi ezimweni ezisabalalisiwe zokukhiqiza, lokhu kusebenza kahle okuphezulu kuhumushela ukongiwa konyaka kwamakhulu ezinkulungwane zama-yuan ekulahlekeni kukagesi kubasebenzisi.
I-3.Industrial Automation: Iziguquli zemvamisa ezisebenzisa ama-substrates angu-12-intshi zibonisa ukusebenza okuhle kakhulu kumarobhothi ezimboni, amathuluzi omshini we-CNC, nezinye izinto zokusebenza. Izici zabo zokushintsha imvamisa ephezulu zithuthukisa isivinini sokuphendula kwemoto ngo-30% kuyilapho kunciphisa ukuphazamiseka kazibuthe kuyingxenye eyodwa kwezintathu yezixazululo ezivamile.
4.I-Consumer Electronics Innovation: Ubuchwepheshe obushaja ngokushesha be-smartphone yesizukulwane esilandelayo sebuqale ukusebenzisa ama-substrate e-SiC angu-12-intshi. Kucatshangwa ukuthi imikhiqizo eshaja ngokushesha engaphezu kuka-65W izoshintshela ngokugcwele kuzixazululo ze-silicon carbide, nama-substrates angu-12-intshi avela njengokukhethwa kokusebenza kwezindleko ezifanele.

Izinsizakalo Ezenziwe Ngokwezifiso ze-XKH ze-SiC Substrate engu-12 intshi

Ukuze kuhlangatshezwane nezidingo ezithile zama-substrates e-SiC angu-12-inch (12-inch silicon carbide substrates), i-XKH inikeza ukusekelwa kwesevisi okuphelele:
1. Ukwenza Ngokwezifiso Ubukhulu:
Sihlinzeka ngama-substrates angu-12-intshi ekucacisweni kogqinsi okuhlukahlukene okuhlanganisa no-725μm ukuze kuhlangatshezwane nezidingo ezihlukene zohlelo lokusebenza.
2. I-Doping concentration:
Ukukhiqiza kwethu kusekela izinhlobo eziningi ze-conductivity ezihlanganisa uhlobo lwe-n-type kanye ne-p-type substrates, enokulawula okunembe kwe-resistivity ebangeni lika-0.01-0.02Ω·cm.
3.Amasevisi okuhlola:
Ngempahla ephelele yokuhlola izinga le-wafer, sinikeza imibiko yokuhlola egcwele.
I-XKH iyaqonda ukuthi ikhasimende ngalinye linezidingo ezihlukile zama-substrates e-SiC angu-12-intshi. Ngakho-ke sinikeza amamodeli wokubambisana webhizinisi avumelana nezimo ukuze sinikeze izixazululo ezincintisana kakhulu, noma ngabe:
· Amasampula e-R&D
· Ukuthengwa kwevolumu
Izinsizakalo zethu ezenziwe ngezifiso ziqinisekisa ukuthi singakwazi ukuhlangabezana nezidingo zakho ezithile zobuchwepheshe nezokukhiqiza zama-substrates e-SiC angu-12-intshi.