I-substrate
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I-InSb wafer engu-2 intshi engu-3 intshi engavulwanga uhlobo lwe-Ntype P 111 100 yama-Infrared Detectors
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Ama-wafer e-Indium Antimonide (InSb) Uhlobo lwe-N Uhlobo lwe-P olulungile lwe-Epi olungavulwanga Ama-wafer e-Te doped noma i-Ge doped angu-2 intshi ubukhulu obungu-3 intshi obungu-4 intshi we-Indium Antimonide (InSb)
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I-SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
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Indlela ye-sapphire ingot engu-3inch engu-4inch engu-6inch Monocrystal CZ KY Engenziwa ngokwezifiso
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I-substrate ye-Sic silicon carbide engu-2 intshi 6H-N Uhlobo 0.33mm 0.43mm ukupholisha okunezinhlangothi ezimbili Ukushisa okuphezulu Ukusetshenziswa kwamandla aphansi
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I-GaAs enamandla amakhulu epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yokwelashwa nge-laser
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I-GaAs laser epitaxial wafer engu-4 intshi engu-6 intshi i-VCSEL vertical cavity surface emission wavelength engu-940nm single junction
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Isitholi sokukhanya se-APD se-InP epitaxial wafer esingu-2 intshi esingu-3 intshi esingu-4 intshi sokuxhumana kwe-fiber optic noma i-LiDAR
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Indandatho yesafire eyenziwe ngezinto zesafire zokwenziwa Ubulukhuni be-Mohs obubonakalayo nobungenziwa ngezifiso obungu-9
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indandatho yesafire yonke indandatho yesafire eyenziwe ngokuphelele ngesafire Izinto zesafire ezenziwe elebhu ezicacile
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I-Sapphire ingot dia 4inch× 80mm Monocrystalline Al2O3 99.999% Single Crystal
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Ilensi ye-Sapphire Prism Sapphire ebonakala kalula kakhulu i-Al2O3 BK7 JGS1 JGS2 Material Optical Instrument