I-substrate
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I-Wafer engu-8 intshi ye-LNOI (LiNbO3 ku-Insulator) yama-Optical Modulators Ama-Waveguides Amasekethe Ahlanganisiwe
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I-LNOI Wafer (i-Lithium Niobate ku-Insulator) I-Telecommunications Sensing High Electro-Optic
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Ama-Silicon Carbide Wafers angamasentimitha angu-3 angenawo umswakama (i-HPSl)
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I-4H-N 8 intshi ye-SiC substrate wafer I-Silicon Carbide Dummy Research grade 500um ubukhulu
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i-sapphire dia single crystal，ubulukhuni obuphezulu i-morhs 9 engaklwebhi ingenziwa ngokwezifiso
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I-Sapphire Substrate enephethini PSS 2inch 4inch 6inch ICP dry etching ingasetshenziswa kuma-LED chips
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I-Substrate ye-Sapphire Enephethini engu-2 intshi engu-4 intshi engu-6 intshi (i-PSS) lapho kutshalwa khona izinto ze-GaN ezingasetshenziswa ekukhanyiseni kwe-LED
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4H-N/6H-N SiC Wafer Ukukhiqizwa kabusha kocwaningo lwe-Dummy grade Dia150mm Silicon carbide substrate
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I-wafer embozwe nge-Au，i-wafer yesafire，i-wafer ye-silicon，i-wafer ye-SiC ，2 intshi 4 intshi 6 intshi，Ubukhulu obumbozwe ngegolide 10 nm 50 nm 100 nm
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ipuleti legolide le-silicon wafer （Si Wafer） 10nm 50nm 100nm 500nm Au Ukuqhuba Okuhle Kakhulu kwe-LED
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Ama-Silicon Wafers Ambozwe Ngegolide 2inch 4inch 6inch Ubukhulu bengqimba yegolide: 50nm (± 5nm) noma wenze ngezifiso ifilimu Yokumboza Au, ubumsulwa obungu-99.999%
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I-AlN-on-NPSS Wafer: Isendlalelo se-aluminium nitride esisebenza kahle kakhulu kwi-substrate ye-sapphire engapholishiwe yezinhlelo zokusebenza ezisezingeni eliphezulu lokushisa, amandla aphezulu, kanye ne-RF