I-substrate
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2 intshi 4 inch 6 inch Patterned Sapphire Substrate (PSS) lapho kutshalwe khona impahla ye-GaN engasetshenziselwa ukukhanyisa kwe-LED
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4H-N/6H-N SiC Wafer Reasearch ukukhiqizwa kwe-Dummy grade Dia150mm I-Silicon carbide substrate
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Isicwecwana esicwebezelayo, isicwecwana esiyisafire, isicwecwana se-silicon, isicwecwe se-SiC, 2inch 4inch 6inch, Ubugqinsi obugqize ngegolide 10nm 50nm 100nm
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ipuleti legolide le-silicon wafer (Si Wafer) 10nm 50nm 100nm 500nm Au Excellent Conductivity ye-LED
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Igolide Coated Silicon Wafers 2inch 4inch 6inch Ugqinsi lwesendlalelo segolide: 50nm (± 5nm) noma wenze ngokwezifiso ifilimu ye-Coating Au, 99.999% ubumsulwa
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I-AlN-on-NPSS Wafer: Isendlalelo Se-Aluminium Nitride Esebenza Kakhulu Ku-Sapphire Substrate Engapholishiwe Yezinga Lokushisa Eliphezulu, Amandla Aphezulu, kanye Nezicelo ze-RF
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I-AlN ku-FSS 2inch 4inch NPSS/FSS AlN ithempulethi yendawo ye-semiconductor
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I-Gallium Nitride (GaN) Epitaxial Ikhule ku-Sapphire Wafers 4inch 6inch ye-MEMS
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Amalensi e-Precision Monocrystalline Silicon (Si) - Osayizi Bangokwezifiso kanye Nezingubo Zokunamathela ze-Optoelectronics kanye ne-Infrared Imaging
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Amalensi e-Crystal Silicon (Si) Enziwe ngokwezifiso Aphezulu-Okuhlanzeka Okuphezulu - Osayizi Abafanelanisiwe Nezingubo Zokusebenza ze-Infrared kanye ne-THz Application (1.2-7µm, 8-12µm)
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Iwindi le-Optical lesinyathelo sohlobo lwe-Sapphire elenziwe ngokwezifiso, i-Al2O3 Single Crystal, Ukuhlanzeka Okuphezulu, Ububanzi obungu-45mm, Ukuqina 10mm, I-Laser Cut futhi Ipholishiwe
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Iwindi lesinyathelo seSapphire elisebenza kahle kakhulu, i-Al2O3 Single Crystal, i-Transparent Coated, imimo eyenziwe ngokwezifiso kanye nosayizi bezinhlelo zokusebenza zokubuka ezinembile