I-substrate

I-Silicon Carbide SiC Ingot engu-6inch N yohlobo lweDummy/ugqinsi lwebanga lokuqala lungenziwa ngokwezifiso
6 ku-Silicon Carbide 4H-SiC Semi-Insulating Ingot, i-Dummy Grade
SiC Ingot 4H uhlobo Dia 4inch 6inch Ukuqina 5-10mm Ucwaningo / Dummy Ibanga
3 inch High Purity (Angagudluliwe)I-Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl)
6inch sapphire Boule sapphire blank single crystal Al2O3 99.999%
I-Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
I-2inch Silicon Carbide Wafer 6H-N Uhlobo Lwebanga Le-Prime Ibanga Ucwaningo Ibanga Le-Dummy Ibanga 330μm 430μm Ukuqina
I-2inch silicon carbide substrate 6H-N enezinhlangothi ezimbili ezipholishiwe ububanzi 50.8mm ibanga lokucwaninga ibanga lokukhiqiza
p-uhlobo 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Ziro MPD
I-SiC substrate P-type 4H/6H-P 3C-N 4inch enogqinsi lwama-350um Ibanga Lokukhiqiza Ibanga leDummy
4H/6H-P 6inch SiC wafer Zero MPD grade Production Ibanga leDummy Grade
Uhlobo lwe-P-SiC wafer 4H/6H-P 3C-N 6inch ukujiya okungu-350 μm nge-Primary Flat Orientation

<< < Edlule 1 2 3 4 5 6 Okulandelayo >>> Ikhasi 3/9