I-substrate
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I-wafer engu-12-Inch engu-4H-SiC yezibuko ze-AR
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Izinto Zokuphatha Ukushisa Ezihlanganisiwe Zedayimane Nethusi
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I-HPSI SiC Wafer ≥90% Ibanga Lokukhanya Lokudlulisa Ama-AI/AR
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I-Silicon Carbide (SiC) Substrate Engangenisi Umswakama Ophakeme Wezingilazi Ze-Ar
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Ama-Wafer e-Epitaxial angu-4H-SiC ama-MOSFET e-Ultra-High Voltage (100–500 μm, amasentimitha angu-6)
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I-SICOI (i-Silicon Carbide ku-Insulator) Ama-Wafers SiC Film KU-Silicon
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I-Sapphire Wafer Engenalutho Ehlanzekile Kakhulu I-Raw Sapphire Substrate Yokucubungula
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Ikristalu Yembewu Yesikwele Yesafire – Isisekelo Esiqondiswe Ngokuqondile Sokukhula Kwesafire Okwenziwa
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I-Silicon Carbide (SiC) I-Substrate Enekristalu Elilodwa – I-Wafer engu-10×10mm
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I-wafer ye-4H-N HPSI SiC 6H-N 6H-P 3C-N SiC Epitaxial ye-MOS noma i-SBD
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I-SiC Epitaxial Wafer yamadivayisi kagesi – 4H-SiC, uhlobo lwe-N, Ubuningi obuphansi besici
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I-4H-N Type SiC Epitaxial Wafer High Voltage High Frequency